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1. 发明专利

GB2415790C Negative photoresist composition 未知
公开(公告)号：GB2415790C
公开(公告)日：2007-09-14
申请号：GB0521650
申请日：2004-05-13
申请人： TOKYO OHKA KOGYO CO LTD
发明人： HIROSAKI TAKAKO , SHIMBORI HIROSHI
IPC分类号： G03F7/038 , G03F7/004 , G03F7/11 , G11B5/31 , G11B5/39

2. 发明专利

DE112005002819B4 Positivresist - Zusammensetzung und Verfahren zur Erzeugung eines Resist - Musters 未知
公开(公告)号：DE112005002819B4
公开(公告)日：2016-12-22
申请号：DE112005002819
申请日：2005-11-28
申请人： TOKYO OHKA KOGYO CO LTD
发明人： ANDO TOMOYUKI , HIROSAKI TAKAKO
IPC分类号： G03F7/039
摘要： Eine Positivresist-Zusammensetzung, umfassend eine Harzkomponente (A), welche eine in Alkali lösliche aufbauende Einheit (a1) und eine aufbauende Einheit (a2), welche eine durch Säure abspaltbare, die Auflösung verhindernde Gruppe aufweist, in der sich die Löslichkeit in Alkali durch die Wirkung einer Säure verstärkt, umfasst, eine Säureerzeuger-Komponente (B), die bei Bestrahlung eine Säure erzeugt, und Tribenzylamin, worin die Harzkomponente (A) ein Polymer (A1) und ein Polymer (A2) umfasst, das Polymer (A1) die aufbauende Einheit (a1) und die aufbauende Einheit (a2) enthält, worin die aufbauende Einheit (a2) des Polymers (A1) eine durch Säure abspaltbare, die Auflösung verhindernde Gruppe (II) und keine durch Säure abspaltbare, die Auflösung verhindernde Gruppe (III) aufweist, und das Polymer (A2) die aufbauende Einheit (a1) und die aufbauende Einheit (a2) enthält, worin die aufbauende Einheit (a2) des Polymers (A2) die durch Säure abspaltbare, die Auflösung verhindernde Gruppe (III) und nicht die durch Säure abspaltbare, die Auflösung verhindernde Gruppe (II) aufweist, worin die aufbauende Einheit (a1) eine aufbauende Einheit (a11) umfasst, die abgeleitet ist von Hydroxystyrol und/oder α-Methylhydroxystyrol und die durch die folgende allgemeine Formel (I) dargestellt wird:in der R ein Wasserstoffatom oder eine Methylgruppe darstellt, und m eine ganze Zahl von 1 bis 3 darstellt, die durch Säure abspaltbare, die Auflösung verhindernde Gruppe (II) wird durch die folgende allgemeine Formel (II) dargestellt: ...

3. 发明专利

DE112005002819T5 未知
公开(公告)号：DE112005002819T5
公开(公告)日：2007-09-13
申请号：DE112005002819
申请日：2005-11-28
申请人： TOKYO OHKA KOGYO CO LTD
发明人： ANDO TOMOYUKI , HIROSAKI TAKAKO
IPC分类号： G03F7/039 , G03F7/004 , H01L21/027

4. 发明专利

GB2415790B Negative photoresist composition 未知
公开(公告)号：GB2415790B
公开(公告)日：2007-08-08
申请号：GB0521650
申请日：2004-05-13
申请人： TOKYO OHKA KOGYO CO LTD
发明人： HIROSAKI TAKAKO , SHIMBORI HIROSHI
IPC分类号： G03F7/038 , G03F7/004 , G03F7/11 , G11B5/31 , G11B5/39

5. 发明专利

GB2415790A Negative photoresist composition 未知
公开(公告)号：GB2415790A
公开(公告)日：2006-01-04
申请号：GB0521650
申请日：2004-05-13
申请人： TOKYO OHKA KOGYO CO LTD
发明人： HIROSAKI TAKAKO , SHIMBORI HIROSHI
IPC分类号： G03F7/038 , G03F7/004 , G03F7/11 , G11B5/31 , G11B5/39
摘要： A negative photoresist composition which is used in a method for forming a pattern wherein an underlayer film is provided on a substrate, a photoresist layer comprising a negative photoresist composition is provided on said underlayer film, said photoresist film is selectively exposed, and then said underlayer film and said photoresist film are simultaneously subjected to a developing treatment, and contains (A) an alkali-soluble resin, (B) an acid generator which generates an acid when irradiated with a radiation, and (C) a crosslinking agent, characterized in that the acid generator (B) comprises an onium salt containing a cation having no hydrophilic group. The negative photoresist composition allows the formation of a resist pattern having improved resolution.

6. 发明公开

EP1947510A4 POSITIVE RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN 有权
标题翻译：正光刻胶组合和方法形成抗蚀剂结构
公开(公告)号：EP1947510A4
公开(公告)日：2010-10-06
申请号：EP06823251
申请日：2006-11-09
申请人： TOKYO OHKA KOGYO CO LTD
发明人： MATSUMIYA TASUKU , HIROSAKI TAKAKO
IPC分类号： G03F7/039 , H01L21/027
CPC分类号： G03F7/0397 , Y10S430/106 , Y10S430/111

7. 发明公开

EP1882982A4 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 失效
标题翻译：正光刻胶组合和方法形成抗蚀剂结构
公开(公告)号：EP1882982A4
公开(公告)日：2010-09-29
申请号：EP06732357
申请日：2006-04-26
申请人： TOKYO OHKA KOGYO CO LTD
发明人： HIROSAKI TAKAKO , SHIONO DAIJU , HIRAYAMA TAKU
IPC分类号： G03F7/039 , H01L21/027
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0397

8. 发明专利

JP2007119370A Compound and method for producing the same 有权
标题翻译：化合物及其制造方法
公开(公告)号：JP2007119370A
公开(公告)日：2007-05-17
申请号：JP2005310979
申请日：2005-10-26
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： HIROSAKI TAKAKO , SHIONO HIROHISA , HIRAYAMA HIROSHI , HANEDA HIDEO
IPC分类号： C07C69/736 , C07C67/31 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a compound which can be used for resist compositions, and to provide a method for producing the compound. SOLUTION: The compound represented by the general formula (I) [R is an acid-dissociable dissolution-inhibiting group; R 11 to R 17 are each an alkyl group or the like; (g)+(j)+(k)+(q)≤5; (b)+(l)+(m)≤4; (c)+(n)+(o)≤4; A is a group represented by formula (Ia) or (Ib) or an alicyclic group]. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：待解决的问题：提供可用于抗蚀剂组合物的化合物，并提供一种制备该化合物的方法。解决方案：由通式（I）表示的化合物[R是酸解离的溶解抑制基团; R 11 至R 17 各自为烷基等; （G）+（J）+（K）+（Q）≤5; （B）+（1）+（M）≤4; （C）+（N）+（O）≤4; A是由式（Ia）或（Ib）表示的基团或脂环基]。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2004004794A NEGATIVE RESIST COMPOSITION 审中-公开
公开(公告)号：JP2004004794A
公开(公告)日：2004-01-08
申请号：JP2003117419
申请日：2003-04-22
申请人： TOKYO OHKA KOGYO CO LTD
发明人： TACHIKAWA TOSHIKAZU , KANEKO FUMITAKE , KUBOTA NAOTAKA , MIYAIRI YOSHIKAZU , HIROSAKI TAKAKO , ENDO KOUTARO
IPC分类号： G03F7/038 , G03F7/004 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a negative resist composition for forming photosensitive layers for lamination on a water insoluble antireflection layer of a multilayered photosensitive material of two layers which have an excellent sensitivity and resolution and provide resist patterns of good sectional shapes having reduced edge roughness in forming the fine resist patterns below 200 nm and multilayered photosensitive materials of three layers which provide resist patterns of good sectional shapes suppressed on the occurence of T-shaped sections and having reduced edge roughness without having trails. SOLUTION: The negative resist composition for forming the photosensitive layers for lamination on the water insoluble antireflection layer containing (A) an alkaline soluble resin, (B) an onium salt generating an acid by irradiation with radiations, and (C) glycoluril of which the Nth place is substituted by at least one bridge forming group selected from a hydroxyl alkyl group and lower alkoxy alkyl group at ratios of (B) 0.5 to 20 parts by mass of the component (B) and 3 to 50 parts by mass of the component (C) per 100 parts by mass of the component (A) is provided. COPYRIGHT: (C)2004,JPO

10. 发明专利

JP2000284491A SUBSTRATE MATERIAL COMPOSITION FOR LITHOGRAPHY 失效
公开(公告)号：JP2000284491A
公开(公告)日：2000-10-13
申请号：JP2000018273
申请日：2000-01-27
申请人： TOKYO OHKA KOGYO CO LTD
发明人： HIROSAKI TAKAKO , IGUCHI ETSUKO , KOBAYASHI MASAICHI
IPC分类号： H01L21/027 , G03F7/11
摘要： PROBLEM TO BE SOLVED: To obtain a substrate material composition for lithography which makes it possible obtain resist patterns of a rectangular shape in a cross-sectional shape and has a high etch rate characteristic dealing with the trend toward thinner films of photoresist films by consisting of the composition of an organic solvent prepared by dissolving a specific benzoguanamine derivative or its oligomer and an inorganic acid and organic acid having a sulfur- containing acide residue or their ester. SOLUTION: This composition consists of the organic solvent prepared by dissolving (A) the benzoguanamine derivative or its oligomer expressed by formula and (B) the inorganic acid and organic acid having the sulfur-containing acide residue or their ester. In the formula, R is a hydrogen atom or hydrocarbon group; at least two among R1, R2, R3, R4 are the substituents selected from a hydroxyalkyl group and alkoxyalkyl group and the balance is the hydrogen atom. The hydroxyalkyl groups among R1 to R4 are preferably hydroxy lower alkyl group and more particularly preferably a hydroxylmethyl group.

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