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1. 发明专利

JPH09159170A CERAMIC GLOW PLUG 失效
公开(公告)号：JPH09159170A
公开(公告)日：1997-06-20
申请号：JP31497595
申请日：1995-12-04
申请人： TOKYO GAS CO LTD , OSAKA GAS CO LTD , TOHO GAS KK , MITSUI SHIPBUILDING ENG
发明人： IKEDA KATSUMI , SUMINOE YASUNORI , ISHIBASHI KOJI , ICHIHASHI TOYOKI , MIYATAKE NAOMASA , NAKAMURA TAKASHI
IPC分类号： F23Q7/00
摘要： PROBLEM TO BE SOLVED: To make it possible to improve the fastness and durability and to be used for a long period by flame spraying silicon onto the surface of a glow plug containing Si-based ceramics as a base material to form an intermediate layer, and coating the surface with one type of alumina and zircon to form an outer layer. SOLUTION: A ceramic glow plug 1 flame sprays silicon onto the surface of a glow plug 2 containing Si-based ceramics as a base material to form a silicon intermediate layer 3. Further, zircon is flame sprayed on the surface of the layer 3 to form an outer layer 4. Instead of the zircon, alumina or mullite may be flame sprayed to form the layer 4. The silicon has thermal expansion coefficient similar to that of Si3 N4 or SiC, and its oxidation resistance is more excellent than those of tungsten or molybdenum, and its Young's modulus is smaller than that of oxide or Si-based ceramics, and hence its deformability is large.

2. 发明公开

EP2544223A4 THIN FILM FORMING APPARATUS 审中-公开
标题翻译：薄膜形成装置
公开(公告)号：EP2544223A4
公开(公告)日：2013-08-14
申请号：EP11750333
申请日：2011-02-21
申请人： MITSUI SHIPBUILDING ENG
发明人： TAKIZAWA KAZUKI , MIYATAKE NAOMASA , MURATA KAZUTOSHI
IPC分类号： H01L21/205 , C23C16/509 , H01J37/32 , H05H1/46
CPC分类号： H01L31/202 , C23C16/5096 , H01J37/32091 , H01J37/3211 , H01J37/32541 , Y02E10/50 , Y02P70/521

3. 发明公开

EP2963150A4 FILM FORMATION DEVICE AND FILM FORMATION METHOD 审中-公开
标题翻译：拍摄装置和成膜方法
公开(公告)号：EP2963150A4
公开(公告)日：2016-10-26
申请号：EP14756496
申请日：2014-02-21
申请人： MITSUI SHIPBUILDING ENG
发明人： MORI YASUNARI , MIYATAKE NAOMASA , HATTORI NOZOMU
IPC分类号： C23C16/455 , C23C16/54 , H01J37/32 , H01L21/31 , H05H1/46
CPC分类号： C23C16/45544 , C03C2218/153 , C23C16/45536 , C23C16/545 , H01J37/32091 , H01J37/32422 , H01J37/32761
摘要： A layer-forming device that enables highly efficient layer formation and has a simplified configuration includes: a substrate feeding mechanism; a plasma-generating electrode; a space-partitioning wall; and a plurality of injectors. The plasma-generating electrode is disposed to face towards a feeding pathway of the substrate, and generates plasma using a reactive gas upon a supply of electric power. The space-partitioning wall is disposed between the feeding pathway and the plasma-generating electrode. A plurality of slit-shaped through-holes, through which radicals, ions generated from the plasma, or a portion of the plasma can pass, is formed at predetermined intervals in the space-partitioning wall. The plurality of injectors are sandwiched between the space-partitioning wall and the feeding pathway, such that each of the injectors is sandwiched between two adjacent through-holes from both sides of the two through-holes in the feeding direction, and the layer-forming gas is supplied toward the substrate through a layer-forming gas supply port.

4. 发明公开

EP2963151A4 FILM-FORMING DEVICE AND INJECTOR 审中-公开
标题翻译：膜形成装置和喷油器
公开(公告)号：EP2963151A4
公开(公告)日：2017-03-08
申请号：EP14757718
申请日：2014-02-21
申请人： MITSUI SHIPBUILDING ENG
发明人： HATTORI NOZOMU , MIYATAKE NAOMASA , MORI YASUNARI
IPC分类号： C23C16/455 , C23C16/44 , C23C16/54 , H01L21/31 , H05H1/46
CPC分类号： C23C16/45574 , C23C16/4412 , C23C16/45519 , C23C16/45536 , C23C16/45544 , C23C16/545 , H01J37/32091 , H01J37/3244 , H01J37/32761 , H01J2237/332
摘要： A layer-forming device includes a feeding mechanism that feeds a substrate during layer formation, an injector unit provided with a plurality of injectors that supplies a layer-forming gas to the substrate, along a feeding passage of the substrate, and a reactant supply unit configured to generate a reactant. The injector unit supplies the reactant through gaps between the injectors to a layer of the layer-forming component. A substrate opposing surface of the injector includes a layer-forming gas supply slot through which the layer-forming gas is output, first gas exhaust slots that suck an excess gas such as the layer-forming gas, the first gas exhaust slots being provided on both sides of the layer-forming gas supply slot in a feeding direction of the substrate, and inert gas supply slots that supply an inert gas, the inert gas supply slots being provided on far sides of the respective first gas exhaust slots away from the layer-forming gas supply slot.

5. 发明公开

EP2408002A4 ATOMIC LAYER DEPOSITION APPARATUS 审中-公开
标题翻译： ATOMLAGENABSCHEIDER
公开(公告)号：EP2408002A4
公开(公告)日：2014-05-14
申请号：EP10750491
申请日：2010-02-15
申请人： MITSUI SHIPBUILDING ENG
发明人： TACHIBANA HIROYUKI , MURATA KAZUTOSHI , MIYATAKE NAOMASA , MORI YASUNARI
IPC分类号： H01L21/31 , C23C16/44 , C23C16/455 , C23C16/46 , C23C16/54
CPC分类号： C23C16/4409 , C23C16/4407 , C23C16/45544 , C23C16/4583 , C23C16/46 , C23C16/54

6. 发明公开

EP2006888A4 METHOD AND APPARATUS FOR GROWING PLASMA ATOMIC LAYER 审中-公开
标题翻译：方法和装置用于生长PLASMAATOMISCHEN LAYER
公开(公告)号：EP2006888A4
公开(公告)日：2011-11-09
申请号：EP07740059
申请日：2007-03-28
申请人： MITSUI SHIPBUILDING ENG
发明人： WASHIO KEISUKE , MURATA KAZUTOSHI , MIYATAKE NAOMASA , TACHIBANA HIROYUKI , HATTORI NOZOMU
IPC分类号： H01L21/316 , C23C16/40 , C23C16/455 , C23C16/509 , H01L21/31 , H01L21/318
CPC分类号： C23C16/402 , C23C16/45542 , C23C16/5096 , H01L21/02164 , H01L21/02222 , H01L21/02274 , H01L21/0228 , H01L21/3141 , H01L21/31612

7. 发明公开

EP1483782A4 PRODUCTION METHOD OF SIC MONITOR WAFER 有权
标题翻译：处理对SIC监控晶片
公开(公告)号：EP1483782A4
公开(公告)日：2008-05-21
申请号：EP03700537
申请日：2003-01-10
申请人： MITSUI SHIPBUILDING ENG
发明人： YAMADA ISAO , MATSUO JIRO , TOYODA NORIAKI , MURATA KAZUTOSHI , MIYATAKE NAOMASA
IPC分类号： C23C16/01 , C23C14/32 , C23C16/32 , C23C16/56 , C30B25/02 , C30B29/36 , C30B33/00 , C30B33/12 , H01L21/02 , H01L21/205
CPC分类号： C30B29/36 , C23C16/01 , C23C16/325 , C30B25/02 , C30B33/00 , Y10S438/931
摘要： The present invention has its object to obtain an SiC monitor wafer which can flatten the surface until particle detection is possible. SiC of a crystal system 3C is deposited on a substrate by a CVD (Chemical Vapor Deposition) method, and the SiC is detached from a substrate. After the SiC surface is flattened by using mechanical polishing alone or in combination with CMP (Chemo Mechanical Polishing), GCIB (Gas Cluster Ion Beam) is irradiated to the surface until the surface roughness becomes Ra=0.5 nm or less and the impurity density of the wafer surface becomes 1*10 11 atoms/cm 2 or less to produce the SiC monitor wafer.

8. 发明专利

DE60333174D1 HERSTELLUNGSVERFAHREN FÜR EINE SIC-MONITOR-WAFER 未知
公开(公告)号：DE60333174D1
公开(公告)日：2010-08-12
申请号：DE60333174
申请日：2003-01-10
申请人： MITSUI SHIPBUILDING ENG
发明人： YAMADA ISAO , MATSUO JIRO , TOYODA NORIAKI , MURATA KAZUTOSHI , MIYATAKE NAOMASA
IPC分类号： C23C14/32 , C23C16/01 , C23C16/32 , C23C16/56 , C30B25/02 , C30B29/36 , C30B33/00 , C30B33/12 , H01L21/02 , H01L21/205

9. 发明专利

JPH10318527A HIGH TEMPERATURE AIR HEATER 失效
公开(公告)号：JPH10318527A
公开(公告)日：1998-12-04
申请号：JP12968597
申请日：1997-05-20
申请人： MITSUI SHIPBUILDING ENG
发明人： NANBA MASAO , MIYATAKE NAOMASA , KIUCHI HIDEHIRO
IPC分类号： F23L15/00 , F23G5/46
摘要： PROBLEM TO BE SOLVED: To detect variation in the quantity of air to be introduced due to abrasion of a refractory protective tube while suppressing permeation of high temperature gas through the protective tube by introducing the air into a gap between a heating tube and the protective tube thereby providing a positive pressure in the gap as compared with the outside (high temperature gas channel). SOLUTION: A high temperature air heater exchanges heat with high temperature gas G through a heating tube body 6, i.e. a heating tube 5 coated with a refractory protective tube 6, and heats up the air 8 flowing through the heating tube 5. A gap 7 is provided between the heating tube 5 and the protective tube 6 and the outer air is introduced into the gap 7 by an air introduction means 101 including a blower B in order to purge the corrosive high temperature gas G. According to the structure, the high temperature corrosive gas is prevented from being diffused reversely into the air 8 to be heated or being mixed therewith even when the high temperature corrosive gas permeates the wail of the protective tube 6 and intrudes into the gap 7 thus enhancing durability of the heating tube 5, and the like. Furthermore, the air introduction means 101 is provided with an air flow meter 103 and soundness of the protective tube 6 is evaluated based on the tracking results.

10. 发明专利

JPH08232082A METALLIC MEMBER FOR HIGH TEMPERATURE OPERATION 失效
公开(公告)号：JPH08232082A
公开(公告)日：1996-09-10
申请号：JP3826395
申请日：1995-02-27
申请人： MITSUI SHIPBUILDING ENG
发明人： MIYATAKE NAOMASA , NANBA MASAO , KAWAMOTO SATOSHI
IPC分类号： F28F19/06 , C23C16/50 , C23C30/00
摘要： PURPOSE: To develop a highly durable metallic member for high temp. operation excellent in oxidation resistance at high temp. and capable of suppressing the progress of oxidation by forming a film of a specified crystalline oxide contg. a rare-earth element on the surface of a heat-resistant metallic substrate. CONSTITUTION: A crystalline rate-earth element-contg. oxide coating film 3 consisting of one or >=2 kinds among monoclinic ZrO2 , Al2 O3 , TiO2 , SiO2 and Y2 O3 contg. 0.01-1.0wt.% one or >=2 kinds of rare-earth elements such as Y, La, Ce and Nd is formed by plasma CVD, etc., in 2-20μm thickness on the surface of a heat-resistant metallic substrate 1 of Fe-Cr-Al alloy, stainless steel, etc., or the coating film 3 is formed on the substrate 1 surface in 1-10μm thickness, and then a coating film 4 of a crystalline oxide such as monoclinic ZrO2 is formed thereon in 1-20μm thickness. The adhesive strength to the coating film 3 is increased through the intervention of the coating film 3, and a stabilized oxidation-resistant layer 2, which is not crystallized at high temp. when in use since it is crystalline, is formed.

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