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1. 发明公开

EP1069603A4 PROCESSING APPARATUS 审中-公开
标题翻译：制造工厂
公开(公告)号：EP1069603A4
公开(公告)日：2007-01-10
申请号：EP99937830
申请日：1999-03-04
申请人： TOKYO ELECTRON LTD
发明人： SUGIYAMA NORIKAZU , OKAYAMA NOBUYUKI , SAEGUSA HIDEHITO , OZAWA JUN
IPC分类号： H01L21/302 , H01J37/32 , H01L21/205 , H01L21/3065
CPC分类号： H01J37/32834 , H01J37/32633
摘要： A processing apparatus (l00) comprising an air-tight processing tank (l02), an exhaust system (l28) for exhausting a gas from the processing tank (l02), and a baffle plate (l20) dividing the interior of the processing tank (l02) into a processing space (l22) in which an object material is subjected to a predetermined process and an exhaust path (l24) communicating with the exhaust system (l28), characterized in that the baffle plate (l20) is provided with a plurality of slits (l20a) for communicating the processing space (l22) and exhaust path (l24) with each other, the portion of an inner surface of each slit (l20a) which is on the side of the processing space being formed as a taper surface (l32) extending by a distance corresponding to not less than l/4 of a depth of the slit.

2. 发明公开

EP1008674A4 PROCESSOR 失效
标题翻译：处理器
公开(公告)号：EP1008674A4
公开(公告)日：2004-06-16
申请号：EP98912715
申请日：1998-04-08
申请人： TOKYO ELECTRON LTD
发明人： OKAYAMA NOBUYUKI , SAEGUSA HIDEHITO , OZAWA JUN , HAYASHI DAISUKE , TAKAYAMA NAOKI , KAZAMA KOICHI
IPC分类号： C23C16/44 , C23C16/455 , C23C16/509 , H01J37/32 , C23F4/00 , C30B25/14
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/5096 , H01J37/3244 , H01J37/32477 , Y10T29/49002 , Y10T29/49117 , Y10T29/532 , Y10T29/53204
摘要： A processor in which insulation members which are easily mounted and positioned and have excellent plasma resistance are fitted in gas delivery holes. Gas delivery holes (128a) arranged in an upper electrode (128) of an etching device (100) are formed in shapes conforming to the outer shapes of insulation members (144). Each insulation member (144) is made of polyether-ether-ketone, polyimide, polyether-imide and the like, and has steps (144a) formed on the outer side surface. The longitudinal length of each insulation member (144) is made smaller than that of the gas delivery holes (128a). Each insulation member (144) is formed with a piercing hole (144d) in the longitudinal direction, with a portion of the piercing hole (144d) near the processing chamber (102) progressively expanding in diameter (tapered) toward the processing chamber (102). The insulation members (144) are inserted into and press-fitted in the gas delivery holes (128a) from the delivery port side of the gas delivery holes (128a) until the steps (144a) engage the shoulders (128b) formed on the inner walls of the gas delivery holes (128a). At this time, the insulation members (144) protrude from the surface of the upper electrode (128) on the side of the susceptor (110).
摘要翻译：处理系统设置有能够容易地装配在气体排放孔中并被定位在排气孔中的绝缘构件。蚀刻系统（100）设置有设置有与绝缘构件（144）的外部形状对应的形状的气体排出孔（128a）的上部电极（128）。绝缘构件（144）由聚（醚醚酮）树脂，聚酰亚胺树脂，聚（醚酰亚胺）树脂等形成。每个绝缘构件144在其外表面上设置有台阶（144a）。绝缘构件（144）的长度比气体排出孔（128a）的长度短。每个绝缘构件（144）设置有纵向通孔（144d），并且在处理室（102）侧的通孔（144d）的端部是锥形的，以朝向处理室（102））。绝缘构件（144）从气体排出孔（128a）的出口端的一侧被压在排气孔（128a）中，以使步骤（144a）与形成在气体排出孔（128a）中的肩部（128b）接触气体排出孔（128a）的侧壁。安装在气体排出孔（128a）中的每个绝缘构件（144）的一部分从面向基座（110）的上部电极（128）的表面突出。

3. 发明专利

JPH02194627A ETCHING DEVICE 失效
公开(公告)号：JPH02194627A
公开(公告)日：1990-08-01
申请号：JP1467689
申请日：1989-01-24
申请人： TOKYO ELECTRON LTD
发明人： SAEGUSA HIDEHITO
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To reduce particles produced from a gas passageway by providing filter means in a treating gas introduction passage to a treating chamber. CONSTITUTION:An anticorrosion high precision filter 9, such as a ceramic filter etc., is provided at a gas inlet 8. First, dust produced in a factory is filtered out by stainless sintered body filters 14a-14d from the treating gas introduced during etching treatment. Further, particles produced at valves 11a-11d, 13a-13c, mass flow controllers 12a-12c, a pipeline 10, etc., between the filters 14a-14d and the filter 9 are filtered out by the high precision filter 9 provided in the vicinity of the gas inlet 8 of an airtight container 1 with filtering precision of 0.01 micron. Thus, etching treatment corresponding to super-fine processing is enabled.

4. 发明专利

JPH02137318A PROCESSING APPARATUS 失效
公开(公告)号：JPH02137318A
公开(公告)日：1990-05-25
申请号：JP29172088
申请日：1988-11-18
申请人： TOKYO ELECTRON LTD
发明人： SAEGUSA HIDEHITO
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To cope with processing conditions of semiconductor for manufacturing various types and to improve versatility by providing heating means and cooling means at predetermined positions of a medium circulating passage for setting a material to be processed to a predetermined temperature. CONSTITUTION:A lower electrode 15 is required to be regulated at its temperature corresponding to the type of a wafer to be processed, and regulated by circulating liquid regulated at its temperature in a passage 17 provided on the lower face of the electrode 15. The liquid discharged from the passage 17 is stored in a reservoir tank 25 through a pipe 18, and fed to the pipe 18 provided with a heating mechanism 28 or a cooling mechanism 30 by a pump 26. When the liquid is out of its set temperature, the cooling mechanism 30 and the heating mechanism 28 are switched to always maintain the liquid fed to the passage 17 at a set temperature, and to control the temperature of the electrode 15. Thus, it can cope with various types of processing conditions to be versatile.

5. 发明专利

JPH02106038A ETCHING EQUIPMENT 失效
公开(公告)号：JPH02106038A
公开(公告)日：1990-04-18
申请号：JP26024888
申请日：1988-10-14
申请人： TOKYO ELECTRON LTD
发明人： SAEGUSA HIDEHITO , FUKAZAWA KAZUO
IPC分类号： C23F1/08 , F25D9/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To prevent the contamination caused by cooling particle by a method wherein the cooling particle generated in an accommodation vessel of refrigerant arranged in a refrigerant circulating system are turned into an atomized state and then taken out. CONSTITUTION:Cooling particle bodies 27 and water vapor bodies 27a are mixed and levitated from a liquid surface. These levitated cooling particle bodies 27 and water vapor bodies 27a are arrived at a liquid reservoir 10 by forced blast with a suction motor 32. The flow velocity of the levitated bodies arriving at the reservoir 10 is remarkably decreased; the particles collide mutually and grow to turn into an atomized state, which deposited on the bottom of the reservoir 10. The cooling particle 27 which have not turned into the atomized state are eliminated by a filter 31. When the cooling particle 27 are eliminated almost completely, gas only returns to an atmosphere. Thereby, the contamination of a processing apparatus caused by the cooling particle bodies 27 is prevented, and the contamination of an arrangement surface where the processing apparatus is installed can be reduced.

6. 发明专利

JPH09283499A PLASMA PROCESSING DEVICE 失效
公开(公告)号：JPH09283499A
公开(公告)日：1997-10-31
申请号：JP11577896
申请日：1996-04-12
申请人： TOKYO ELECTRON LTD
发明人： AOKI MAKOTO , SAEGUSA HIDEHITO
IPC分类号： H05H1/46 , C23C14/34 , C23C16/50 , C23F4/00 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing device wherein surface peeling can be restrained by constituting a gas supply head part to enable field concentration of plasma to be relaxed. SOLUTION: Plasma processing device comprises a processing container 26 which enables evacuation, a mount stand 30 which is contained in the processing container and whereon a processing object W is mounted, a gas supply head part 48 arranged in opposition to the mount stand 30 for supplying processing gas and a high frequency power supply which supplies high frequency power for producing plasma inside the processing container 26. A ring-shaped gas shooting-up groove 50 is formed in a lower surface of the gas supply head part 48 and a surface defining an opening part thereof is formed to be curved. As a result, field concentration of plasma in a lower surface of the gas supply head part 48 is restrained.

7. 发明专利

JPH02207547A PROCESSING METHOD 失效
公开(公告)号：JPH02207547A
公开(公告)日：1990-08-17
申请号：JP2779789
申请日：1989-02-07
申请人： TOKYO ELECTRON LTD
发明人： NONAKA TATSU , KUBOTA MASAKI , SAEGUSA HIDEHITO
IPC分类号： H01L21/302 , H01L21/027 , H01L21/30 , H01L21/3065 , H01L21/677 , H01L21/68
摘要： PURPOSE:To facilitate management for each object to be processed by a method wherein the arrangement order of objects to be processed in a containing vessel is inverted, the objects are carried into a processing chamber, and the objects after processing are arranged and contained in the containing vessel so as to keep the initial arrangement order. CONSTITUTION:For sending-out, indexers 7b and 7a are set as the first one and the second one, respectively. For buffering, indexers 7c and 7d are set as the first one and the second one, respectively. When the transferring of wafers 1 is started, the wafers are accommodated in each of the cassettes 6 from indexers 7b to 7c and from 7a to 7d in the state where the arrangement order of the wafers 1 is inverted. After the wafers 1 sent out from the indexer 7d are processed by a processing part 3, said wafers are accommodated in order in the wafer cassette 6 on the indexer 20a, and the wafers 1 sent out from the indexer 7c are accommodated in order in the wafer cassette 6 on the indexer 20b. At this time, the wafers for sending and for receiving are accommodated in the state where the up-and-down arrangement order is inverted. Thereby, the arrangement order of the object to be processed in the containing vessel is kept in the same state before and after processing, and the management for each object to be processed can be facilitated.

8. 发明专利

JP2011049173A Improved deposition shield in plasma processing system 有权
标题翻译：改进的等离子体处理系统中的沉积屏蔽
公开(公告)号：JP2011049173A
公开(公告)日：2011-03-10
申请号：JP2010224101
申请日：2010-10-01
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： SAEGUSA HIDEHITO , TAKASE HITOSHI , MIHASHI YASUSHI , NAKAYAMA HIROYUKI
IPC分类号： H05H1/46 , C23C16/44 , H01J37/32 , H01L21/205 , H01L21/306 , H01L21/3065 , H01L21/31 , H05H1/00
CPC分类号： H01J37/32477 , Y10S156/916
摘要： PROBLEM TO BE SOLVED: To provide an improved deposition shield for a plasma processing system. SOLUTION: The deposition shield 14 improved for surrounding a processing space 12 of the plasma processing system includes a cylindrical body having: an inner surface 82; an outer surface 84; an upper end face 86; and a lower end face 88. The lower end face 88 has an end lip surface 120. Protection barriers 150 are combined with a plurality of exposed surfaces 145 of the deposition shield 14. The exposed surfaces 145 include the inner surface 82, the upper end face 86, and the end lip surface 120. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为等离子体处理系统提供改进的沉积屏蔽。解决方案：用于围绕等离子体处理系统的处理空间12而改进的沉积屏蔽14包括：圆柱体，其具有：内表面82; 外表面84; 上端面86; 和下端面88.下端面88具有端部唇缘表面120.保护屏障150与沉积屏蔽14的多个暴露表面145组合。暴露表面145包括内表面82，上端面86和端唇表面120.版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2003174017A METHOD OF WORKING QUARTZ MEMBER FOR PLASMA TREATMENT DEVICE, QUARTZ MEMBER FOR PLASMA TREATMENT DEVICE, AND PLASMA TREATMENT DEVICE MOUNTED WITH THE QUARTZ MEMBER 审中-公开
公开(公告)号：JP2003174017A
公开(公告)日：2003-06-20
申请号：JP2001332462
申请日：2001-10-30
申请人： TOKYO ELECTRON LTD
发明人： SUGIYAMA TOMOKAZU , SAEGUSA HIDEHITO , OKAYAMA NOBUYUKI , IIMURO SHUNICHI , IMAFUKU KOSUKE , NAGAYAMA MASAYUKI , MIHASHI YASUSHI , NAKAYAMA HIROYUKI , KO AKI
IPC分类号： H01L21/302 , B44C1/22 , H01L21/205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a method of working quartz member for plasma treatment device by which occurrence of particles in an initial stage and occurrence of chipping thereafter can be suppressed, and to provide a quartz member for plasma treatment device and a plasma treatment device mounted with the quartz member. SOLUTION: Many cracks 155 occurred in the quartz member 151 for plasma treatment device used for a shield ring, focus ring, etc., after diamond grinding are removed by polishing the surface of the member 151 with abrasive grains having a grain size of #320-400. Thereafter, a smashed layer 163 is removed while recessed and projected sections to which deposits can be adhered and which can hold the adhered deposits are maintained on the surface of the member 151 by polishing the surface of the member 151 with abrasive grains having a smaller grain size. COPYRIGHT: (C)2003,JPO

10. 发明专利

JPH11317397A PROCESSING DEVICE 失效
公开(公告)号：JPH11317397A
公开(公告)日：1999-11-16
申请号：JP17961698
申请日：1998-06-11
申请人： TOKYO ELECTRON LTD
发明人： SUGIYAMA TOMOKAZU , OKAYAMA NOBUYUKI , SAEGUSA HIDEHITO , OZAWA JUN
IPC分类号： H01L21/302 , H01J37/32 , H01L21/205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a processing device in a long maintenance cycle and having a baffle plate, capable of suppressing the lowering of exhaust flow even under a process generating a much adhesion deposit. SOLUTION: Inside a processing chamber 102 of an etching system 100 a lower electrode 104 is set aside and devided into a processing space 122, where a wafer W on the lower electrode 104 is set and a evacuation path 124 is connected to an evacuating pipe 128 by a grounded baffle plate 120. A plurality of slits 120a arranged radially are formed on the baffle plate 120, and the slit 120a connects the processing space 122 and the evacuating path 124. The slit 120a on the side of the processing space 122 is tapered. A taper depth (h) of the taper face is substantially 1/2 of a slit depth (H) and a taper angle (θ) is substantially set to 5 deg. to 30 deg..

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