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1. 发明公开

KR20180031604A 기판 처리 장치 및 기판 반송 방법 审中-公开
标题翻译：基板处理设备和转移基板的方法
公开(公告)号：KR20180031604A
公开(公告)日：2018-03-28
申请号：KR20170120347
申请日：2017-09-19
申请人： TOKYO ELECTRON LTD
发明人： NAGAKUBO KEIICHI , SASAKI YOSHIAKI
IPC分类号： H01L21/67 , H01L21/677
CPC分类号： H01L21/67 , H01L21/677 , H01L21/687 , H01L21/68707 , H01L21/67167 , H01L21/6719 , H01L21/67259 , H01L21/67265 , H01L21/67742 , H01L21/67754 , H01L21/67778 , H01L21/681
摘要： 본발명은, 겹치게배치된 2매의기판의각각의위치를정확하게특정할수 있는기판반송방법을제공한다. 2매의웨이퍼(W)를반송아암(14a)에의해겹치게유지하는기판처리장치(10)에있어서, 하방웨이퍼검출센서(29)의발광부(29a)는, 하방웨이퍼(W)가프로세스모듈(13)의내부를향해서반송될때 하방웨이퍼(W)가통과하는영역에배치되고, 또한하방웨이퍼(W) 및상방웨이퍼(W)의사이에위치하도록배치되고, 하방웨이퍼검출센서(29)의수광부(29b)는, 하방웨이퍼(W)를개재해서발광부(29a)와대향하도록배치되고, 상방웨이퍼검출센서(30)는, 상방웨이퍼(W)가프로세스모듈(13)의내부를향해서반송될때 상방웨이퍼(W)가통과하는영역에배치된다.
摘要翻译：本发明提供一种基板处理装置，该基板处理装置具有：搬运臂，其在搬运室和具有两个载置台的处理室之间搬运2个基板，搬运臂在2个基板重叠的状态下保持2个基板，两个基板。所述基板处理设备包括：下基板检测传感器，所述下基板检测传感器被构造成当所述下基板被转印时检测下基板的边缘部分; 以及上基板检测传感器，所述上基板检测传感器被构造成当所述上基板被转印时检测上基板的边缘部分。

2. 发明专利

JP2003100709A PLASMA TREATMENT METHOD AND PLASMA TREATMENT APPARATUS 审中-公开
公开(公告)号：JP2003100709A
公开(公告)日：2003-04-04
申请号：JP2001298256
申请日：2001-09-27
申请人： TOKYO ELECTRON LTD
发明人： KOBAYASHI YOSHIYUKI , NAGAKUBO KEIICHI
IPC分类号： H01L21/302 , H01J37/32 , H01L21/00 , H01L21/3065 , H01L21/687
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus in which the whole surface of a substrate to be treated can be treated evenly, and the uniformity of the treatment over the surface of the substrate to be treated can be improved, and to provide a plasma treatment method. SOLUTION: While a wafer W placed on a lower electrode 2 is etched based on a prescribed etching treatment, the top of a lifter pin 60 electrically connected to the lower electrode 2 is pressed to the wafer W by a built-in spring in the lifter pin 60. Since the most of the rear surface of the wafer corresponding to a through-hole 2a is brought into contact with the top of the lifter pin 60, the wafer is held in the same state as the wafer is in contact with the lower electrode 2.

3. 发明专利

JP2013016532A Method of manufacturing silicon parts, and silicon parts for etching process apparatus 审中-公开
标题翻译：制造硅部件的方法和蚀刻工艺装置的硅部件
公开(公告)号：JP2013016532A
公开(公告)日：2013-01-24
申请号：JP2011146176
申请日：2011-06-30
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： NAGAKUBO KEIICHI , IMAFUKU KOSUKE , OHIRA TAKAHIKO
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To optimize selection of silicon scraps which is used in manufacturing silicon parts for an etching process apparatus.SOLUTION: A method of manufacturing silicon parts for an etching process apparatus recycles silicon scraps to manufacture silicon parts to be disposed in the etching process apparatus. The method includes the steps of: measuring dopant content in the silicon scraps; calculating an input amount of the silicon scraps, silicon raw material, and dopant based on the measured dopant content and a target value; melting the calculated amount of the silicon scraps, the silicon material, and the dopant by inputting them into a crucible; cooling and solidifying the molten material; producing polycrystal silicon by removing a portion thereof including at least an upper surface of the solidified material; and manufacturing the silicon parts from the produced polycrystal silicon.
摘要翻译：要解决的问题：优化用于制造用于蚀刻处理装置的硅部件的硅屑的选择。解决方案：用于蚀刻处理设备的硅部件的制造方法回收硅屑以制造要设置在蚀刻处理设备中的硅部件。该方法包括以下步骤：测量硅屑中的掺杂剂含量; 基于测量的掺杂剂含量和目标值计算硅废料，硅原料和掺杂剂的输入量; 通过将硅废料，硅材料和掺杂剂输入坩埚来熔化计算量的硅粉; 冷却和固化熔融材料; 通过除去至少包含固化材料的上表面的部分来生产多晶硅; 并从所制造的多晶硅制造硅部件。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2011018894A Method for reusing consumable part used for plasma processing apparatus 有权
标题翻译：用于等离子体处理装置的消耗部分的方法
公开(公告)号：JP2011018894A
公开(公告)日：2011-01-27
申请号：JP2010128837
申请日：2010-06-04
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： SATO NAOYUKI , NAGASEKI KAZUYA , NAGAYAMA MASAYUKI , NAGAKUBO KEIICHI
IPC分类号： H01L21/3065 , H05H1/46
CPC分类号： H01L21/465 , C23C16/0227 , C23C16/325 , C23C16/4418 , H01J37/32467 , H01J37/32862
摘要： PROBLEM TO BE SOLVED: To provide a method for reusing a consumable part used for a plasma processing apparatus capable of eliminating wastefulness.SOLUTION: The method includes: depositing silicon carbide by CVD to generate a silicon carbide lump 41; processing the silicon carbide lump 41 to manufacture a focus ring 25; attaching the manufactured focus ring 25 to a plasma processing apparatus 10 followed by repeating plasma etching processing at predetermined times; cleaning the surface of the focus ring 25' consumed during the plasma etching treatment with oxide; laminating silicon carbide by CVD on the surface of the cleaned focus ring 25, to generate a silicon carbide lump 42; processing the silicon carbide lump 42 to remanufacture a focus ring 25"; and attaching the remanufactured focus ring 25" to the plasma processing apparatus 10, followed by repeating the plasma etching processing at predetermined times.
摘要翻译：要解决的问题：提供一种重复使用能够消除浪费的等离子体处理装置的消耗部件的方法。解决方案：该方法包括：通过CVD沉积碳化硅以产生碳化硅块41; 处理碳化硅块41以制造聚焦环25; 将制造的聚焦环25附接到等离子体处理装置10，然后在预定时间重复等离子体蚀刻处理; 清洁在等离子体蚀刻处理期间用氧化物消耗的聚焦环25'的表面; 在清洁的聚焦环25的表面上通过CVD层压碳化硅以产生碳化硅块42; 处理碳化硅块42以重新制造聚焦环25“;以及将再制造的聚焦环25”附接到等离子体处理装置10，然后在预定时间重复等离子体蚀刻处理。

5. 发明专利

JP2012069868A Electrode plate for plasma etching and plasma etching apparatus 有权
标题翻译：用于等离子体蚀刻和等离子体蚀刻装置的电极板
公开(公告)号：JP2012069868A
公开(公告)日：2012-04-05
申请号：JP2010215315
申请日：2010-09-27
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： SATO NAOYUKI , NAGAYAMA MASAYUKI , NAGAKUBO KEIICHI
IPC分类号： H01L21/3065 , H05H1/46
CPC分类号： H01J37/32449 , C23C16/455 , C23C16/45561 , C23C16/45563 , C23C16/45565 , C23C16/505 , C23C16/509 , H01J37/32009 , H01J37/3244 , H01J37/32541
摘要： PROBLEM TO BE SOLVED: To provide an electrode plate for plasma etching in which the arrangement of a plurality of types of gas holes penetrating the electrode plate can be optimized.SOLUTION: The electrode plate 160 for plasma etching is a circular plate having a predetermined thickness. A plurality of gas holes penetrating one surface of the electrode plate 160 perpendicularly are formed on a plurality of concentric circles. Gas holes of different types are formed, respectively, in two or more regions dividing the electrode plate 160 in the radial direction.
摘要翻译：要解决的问题：提供一种用于等离子体蚀刻的电极板，其中可以优化穿透电极板的多种类型的气孔的布置。解决方案：用于等离子体蚀刻的电极板160是具有预定厚度的圆板。在多个同心圆上形成有贯穿电极板160的一个表面的多个气孔。在电极板160沿径向分割的两个以上的区域分别形成有不同类型的气孔。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2011035052A Electrode for use in plasma processing apparatus, and plasma processing apparatus 有权
标题翻译：用于等离子体处理装置的电极和等离子体处理装置
公开(公告)号：JP2011035052A
公开(公告)日：2011-02-17
申请号：JP2009177792
申请日：2009-07-30
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： NAGAKUBO KEIICHI , MIYAI TAKAHIRO
IPC分类号： H01L21/3065
CPC分类号： C23C16/45565 , H01J37/3244 , H01J37/32449 , H01J37/32541 , H01J37/3255
摘要： PROBLEM TO BE SOLVED: To provide an electrode for use in a plasma processing apparatus that can reduce the possibility of an abnormal discharge without entailing a rise in manufacturing cost and improve productivity by prolongation of a life. SOLUTION: A shower plate electrode is constituted which is provided above a lower electrode within a processing chamber so as to face the lower electrode serving as a mounting table configured to mount thereon a processing target substrate, and a plurality of gas passage holes 185 are arranged, wherein the electrode is composed of: an upper member 182 provided with the plurality of gas passage holes 185 through which a processing gas is supplied; a lower member 181 positioned below the upper member and provided with multiple sets of gas discharge holes 184 through which the processing gas is discharged; and intermediate member 183. Here, each gas passage hole 185 may have a diameter larger than that of each gas discharge hole 184, each set of the gas discharge holes 184 may communicate with corresponding one of the gas passage holes 185, and each set of the gas discharge holes 184 may be arranged outside the rim of the corresponding one of the gas passage holes 185 when viewed from a top thereof. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种用于等离子体处理装置的电极，其可以降低异常放电的可能性，而不需要增加制造成本，并且通过延长寿命来提高生产率。＆lt; P＆gt;解决方案：构成淋浴板电极，其设置在处理室内的下电极上方，以面对用作安装在其上的处理对象基板的安装台的下电极，以及多个气体通路孔 185，其中电极由以下部件组成：设置有多个气体通过孔185的上部构件182，通过该气体通道孔185供应处理气体; 下部构件181，其位于上部构件下方，并且设置有多组气体排出孔184，排出处理气体; 这里，每个气体通过孔185的直径可以大于每个气体排出孔184的直径，每组排气孔184可与相应的气体通道孔185连通，当从其顶部观察时，气体排出孔184可以布置在相应的一个气体通道孔185的边缘的外侧。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2011018821A Surface processing method 有权
标题翻译：表面处理方法
公开(公告)号：JP2011018821A
公开(公告)日：2011-01-27
申请号：JP2009163418
申请日：2009-07-10
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： SATO NAOYUKI , NAGAYAMA MASAYUKI , NAGAKUBO KEIICHI
IPC分类号： H01L21/3065 , C23C16/42 , C23C26/00 , H05H1/32 , H05H1/46
CPC分类号： C23C8/36 , C23C8/80 , C23C16/325 , C23C16/4404 , C23C16/56 , H01J2237/31
摘要： PROBLEM TO BE SOLVED: To provide a surface processing method capable readily removing a broken layer formed on the surface of a member, especially, of a step difference portion.SOLUTION: The surface of a focus ring 25, made of silicon carbide having a broken layer 25h on the surface, is irradiated with an electron beam 45, and them heated by a plasma torch 50 or housed in an annealing processing device 60 and heated. By doing so, the surface of the focus ring 25 is heated at, for example 1,100-1,300°C as a temperature of recrystallization of silicon carbide to make the silicon carbide of this section recrystallize, to modify the surface into a dense layer, thereby reducing the number of particles discharged from the surface of focus ring 25 when the focus ring 25 is applied to a plasma processing apparatus 10.
摘要翻译：要解决的问题：提供一种能够容易地除去形成在构件的表面上，特别是台阶差部分的破裂层的表面处理方法。解决方案：由具有破碎的碳化硅制成的聚焦环25的表面表面上的层25h被电子束45照射，并通过等离子体焰炬50加热，或者容纳在退火处理装置60中并加热。通过这样做，将焦点环25的表面作为碳化硅再结晶的温度在例如1,100-1,300℃下加热，使得该部分的碳化硅再结晶，从而将表面改性为致密层，由此当将聚焦环25施加到等离子体处理装置10时，减少从聚焦环25的表面排出的颗粒的数量。

8. 发明专利

JP2010238819A Plasma processing apparatus and plasma processing method 审中-公开
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：JP2010238819A
公开(公告)日：2010-10-21
申请号：JP2009083607
申请日：2009-03-30
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： HATTA KOICHI , NAGAKUBO KEIICHI
IPC分类号： H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus and a plasma processing method that provide more diversified control for processing states in plasma processing than before without increasing a manufacturing cost of the plasma processing apparatus. SOLUTION: In a plasma processing apparatus, a dipole ring magnet consists of an upper dipole ring magnet and a lower dipole ring magnet which are provided up and down as separate bodies, with the lower dipole ring magnet being located at the downside of the upper dipole ring magnet. The directions of magnetic poles in the upper and lower dipole ring magnets are set so as to shift by a desired angle. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种等离子体处理装置和等离子体处理方法，其对等离子体处理中的处理状态提供了比以前更多样化的控制，而不增加等离子体处理装置的制造成本。解决方案：在等离子体处理装置中，偶极环磁体由上偶极环磁体和下偶极环磁体组成，上磁极和下偶极环磁体分别设置在上下分离体上，下偶极环磁体位于上偶极环磁铁。将上，下偶极环磁铁中的磁极的方向设定为移动希望的角度。版权所有（C）2011，JPO＆INPIT

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