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1. 发明申请

WO2006124321A2 TREATMENT OF SUBSTRATE USING FUCTIONALIZING AGENT IN SUPERCRITICAL CARBON DIOXIDE 审中-公开
标题翻译：在超临界二氧化碳中使用结垢剂处理基材
公开(公告)号：WO2006124321A2
公开(公告)日：2006-11-23
申请号：PCT/US2006/017294
申请日：2006-05-02
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , KEVWITCH, Robert
发明人： KEVWITCH, Robert
IPC分类号： G03F7/42 , H01L21/3105 , H01L21/306 , H01L21/321
CPC分类号： H01L21/0206 , G03F7/427 , H01L21/02071
摘要： During the processing of substrates (105), the substrate surface may be subjected to a cleaning process using supercritical CO 2 . Surface matter may remain, for example, because it is only minimally soluble in the supercritical CO 2 . For example, an oxidation cleaning process causes the substrate structure (105) to cleave at several points leaving smaller fragments of oxidized residue behind. This residue has only minimal solubility in supercritical CO 2 due to the polar constituents resulting from oxidation. The method thus further includes processing the substrate (105) with supercritical CO 2 and a functionalizing agent that can react with the smaller fragments and/or other less soluble components. These functionalized components are rendered more soluble in supercritical CO 2 and are more easily removed than their predecessors.
摘要翻译：在处理基板（105）期间，可以使用超临界CO 2 2对基板表面进行清洁处理。例如，表面物质可以保留，因为它仅在极限可溶于超临界CO 2 2中。例如，氧化清洁过程使得底物结构（105）在几个点处裂开，留下较小的氧化残余物碎片。由于由氧化产生的极性成分，该残余物在超临界CO 2 2中仅具有最小的溶解度。因此，该方法还包括用超临界CO 2处理衬底（105）和可以与较小碎片和/或其它较不溶的组分反应的官能化剂。这些官能化组分在超临界CO 2中更易溶解，并且比其前辈更容易除去。

2. 发明申请

WO2006088561A2 METHOD FOR TREATING A SUBSTRATE WITH A HIGH PRESSURE FLUID USING A PEROXIDE-BASED PROCESS CHEMISTRY 审中-公开
标题翻译：用过氧化氢法处理具有高压流体的基板的方法
公开(公告)号：WO2006088561A2
公开(公告)日：2006-08-24
申请号：PCT/US2005/047409
申请日：2005-12-29
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , KEVWITCH, Robert , GOSHI, Gentaro , HILLMAN, Joseph, T. , LOWE, Marie , HANSEN, Brandon
发明人： KEVWITCH, Robert , GOSHI, Gentaro , HILLMAN, Joseph, T. , LOWE, Marie , HANSEN, Brandon
IPC分类号： G03F7/42 , B08B7/00
CPC分类号： C11D3/3947 , B08B7/0021 , C11D11/0047 , C23G5/00 , G03F7/427 , H01L21/02063 , H01L21/02101 , H01L21/31133 , H01L21/67057 , H05K3/26
摘要： A method and system (100, 200) is described for treating a substrate (105, 205) with a high pressure fluid, such as carbon dioxide in a supercritical state. A process chemistry is introduced to the high pressure fluid for treating the substrate surface. The process chemistry includes a peroxide-based chemistry.
摘要翻译：描述了用高压流体（例如超临界状态的二氧化碳）处理衬底（105,205）的方法和系统（100,200）。将工艺化学物质引入用于处理基材表面的高压流体中。工艺化学包括基于过氧化物的化学。

3. 发明申请

WO2007044048A2 METHOD AND SYSTEM FOR TREATING A SUBSTRATE WITH A HIGH PRESSURE FLUID USING A PEROXIDE-BASED PROCESS CHEMISTRY IN CONJUNCTION WITH AN INITIATOR 审中-公开
标题翻译：使用基于过氧化物的加工化学与引发剂一起用高压流体处理基底的方法和系统
公开(公告)号：WO2007044048A2
公开(公告)日：2007-04-19
申请号：PCT/US2005/047693
申请日：2005-12-30
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , KEVWITCH, Robert
发明人： KEVWITCH, Robert
CPC分类号： H01L21/02101 , G03F7/427 , H01L21/67028
摘要： A method and system (100, 200) is described for treating a substrate (105, 205) with a high pressure fluid, such as carbon dioxide in a supercritical state. A process chemistry containing a process peroxide is introduced to the high pressure fluid for treating the substrate surface. The peroxide-based chemistry is used in conjunction with an initiator, wherein the initiator facilitates the formation of a radical of the process peroxide.
摘要翻译：描述了用高压流体（例如处于超临界状态的二氧化碳）处理基板（105,205）的方法和系统（100,200）。将包含过氧化氢的工艺化学品引入高压流体以处理基材表面。基于过氧化物的化学物质与引发剂一起使用，其中引发剂促进过程过氧化物的自由基的形成。

4. 发明申请

WO2006091264A1 METHOD AND SYSTEM FOR TREATING A DIELECTRIC FILM 审中-公开
标题翻译：用于处理电介质膜的方法和系统
公开(公告)号：WO2006091264A1
公开(公告)日：2006-08-31
申请号：PCT/US2005/046341
申请日：2005-12-19
申请人： TOKYO ELECTRON LIMITED , KEVWITCH, Robert , HANSEN, Brandon , TOMA, Dorel, Ioan , ZHU, Jianhong
发明人： KEVWITCH, Robert , HANSEN, Brandon , TOMA, Dorel, Ioan , ZHU, Jianhong
IPC分类号： H01L21/31
CPC分类号： H01L21/76802 , H01L21/02063 , H01L21/02101 , H01L21/02126 , H01L21/02337 , H01L21/3105 , H01L21/31633 , H01L21/31695 , H01L21/76814 , H01L21/76826 , H01L21/76831 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A method and system for treating a dielectric film includes exposing at least one surface of the dielectric film to an alkyl silane, an alkoxysilane, an alkyl siloxane, an alkoxysiloxane, an aryl silane, an acyl silane, a cyclo siloxane, a polysilsesquioxane (PSS), an aryl siloxane, an acyl siloxane, or a halo siloxane, or any combination thereof. The dielectric film can include a low dielectric constant film with or without pores having an etch feature formed therein following dry etch processing. As a result of the etch processing or ashing, exposed surfaces in the feature formed in the dielectric film can become damaged, or activated, leading to retention of contaminants, absorption of moisture, increase in dielectric constant, etc. Damaged surfaces, such as these, are treated by performing at least one of healing these surfaces to, for example, restore the dielectric constant (i.e., decrease the dielectric constant) and cleaning these surfaces to remove contaminants, moisture, or residue. Moreover, preparation for barrier layer and metallization of features in the film may include treating by performing sealing of sidewall surfaces of the feature to close exposed pores and provide a surface for barrier film deposition.
摘要翻译：用于处理电介质膜的方法和系统包括将电介质膜的至少一个表面暴露于烷基硅烷，烷氧基硅烷，烷基硅氧烷，烷氧基硅氧烷，芳基硅烷，酰基硅烷，环状硅氧烷，聚倍半硅氧烷（PSS ），芳基硅氧烷，酰基硅氧烷或卤代硅氧烷，或其任何组合。介电膜可以包括具有或不具有在干蚀刻处理之后形成的蚀刻特征的孔的低介电常数膜。作为蚀刻处理或灰化的结果，形成在电介质膜中的特征中的暴露表面可能被损坏或激活，导致污染物的保留，水分的吸收，介电常数的增加等。损坏的表面，例如这些通过执行愈合这些表面中的至少一个来处理，例如恢复介电常数（即，降低介电常数）并清洁这些表面以去除污染物，水分或残留物。此外，膜的特征的阻挡层和金属化的制备可以包括通过执行特征的侧壁表面的密封来封闭暴露的孔并提供用于阻挡膜沉积的表面来进行处理。

5. 发明申请

WO2006107502A3 REMOVAL OF POROGENS AND POROGEN RESIDUES USING SUPERCRITICAL CO2 审中-公开
公开(公告)号：WO2006107502A3
公开(公告)日：2006-10-12
申请号：PCT/US2006/008461
申请日：2006-03-07
申请人： SUPERCRITICAL SYSTEMS INC. , HILLMAN, Joseph, T. , KEVWITCH, Robert
发明人： HILLMAN, Joseph, T. , KEVWITCH, Robert
IPC分类号： B08B3/00 , C23G1/00
摘要： A method of and apparatus for treating a substrate to remove porogens and/or porogen residues form a dielectric layer using a processing chamber operating at a supercritical state is disclosed. In addition, other supercritical processes can be performed before and/or after the removal process.

6. 发明申请

WO2006091909A2 ETCHING AND CLEANING BPSG MATERIAL USING SUPERCRITICAL PROCESSING 审中-公开
标题翻译：使用超临界加工蚀刻和清洁BPSG材料
公开(公告)号：WO2006091909A2
公开(公告)日：2006-08-31
申请号：PCT/US2006/006768
申请日：2006-02-22
申请人： SUPERCRITICAL SYSTEMS INC. , JACOBSON, Gunilla , KEVWITCH, Robert , LOWE, Marie
发明人： JACOBSON, Gunilla , KEVWITCH, Robert , LOWE, Marie
IPC分类号： B08B6/00 , B44C1/22 , C23F1/00
CPC分类号： H01L21/02101 , B08B7/0021 , C23G5/00
摘要： A method for etching and removing post-etch residue from a BPSG material is disclosed. In accordance with the method of the present invention, the BPSG material is etched and the residue is removed from the substrate structure using supercritical solutions.
摘要翻译：公开了一种从BPSG材料蚀刻和去除蚀刻后残留物的方法。根据本发明的方法，对BPSG材料进行蚀刻，并使用超临界溶液将残留物从衬底结构中除去。

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