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1. 发明申请

WO2007112181A3 METHOD OF MONITORING A SEMICONDUCTOR PROCESSING SYSTEM USING A WIRELESS SENSOR NETWORK 审中-公开
公开(公告)号：WO2007112181A3
公开(公告)日：2007-10-04
申请号：PCT/US2007/063466
申请日：2007-03-07
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , KAUSHAL, Sanjeev , SUGISHIMA, Kenji , RAO, Donthineni, Ramesh Kumar
发明人： KAUSHAL, Sanjeev , SUGISHIMA, Kenji , RAO, Donthineni, Ramesh Kumar
IPC分类号： H01L21/00
摘要： A method and system for non-invasive sensing and monitoring of a processing system (100, 200) employed in semiconductor manufacturing. The method allows for detecting and diagnosing drift and failures in the processing system (100, 200) and taking the appropriate correcting measures. The method includes positioning at least one non-invasive sensor (247a-d, 248a-b, 249a-b, 250a-c, 906) on an outer surface of a system component of the processing system (200), where the at least one non- invasive sensor forms a wireless sensor network (902), acquiring a sensor signal from the at least one non-invasive sensor (247a-d, 248a-b, 249a-b, 250a-c, 906), where the sensor signal tracks a gradual or abrupt change in a processing state of the system component during flow of a process gas in contact with the system component, and extracting the sensor signal from the wireless sensor network (902) to store and process the sensor signal. In one embodiment, the non-invasive sensor (247a-d, 248a-b, 249a-b, 250a-c, 906) can be an accelerometer sensor and the wireless sensor network (902) can be motes-based.

2. 发明申请

WO2007112180A2 SEMICONDUCTOR PROCESSING SYSTEM WITH WIRELESS SENSOR NETWORK MONITORING SYSTEM INCORPORATED THEREWITH 审中-公开
标题翻译：具有无线传感器网络监控系统的半导体处理系统
公开(公告)号：WO2007112180A2
公开(公告)日：2007-10-04
申请号：PCT/US2007/063462
申请日：2007-03-07
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , KAUSHAL, Sanjeev , SUGISHIMA, Kenji , RAO, Donthineni, Ramesh, Kumar
发明人： KAUSHAL, Sanjeev , SUGISHIMA, Kenji , RAO, Donthineni, Ramesh, Kumar
IPC分类号： H01L21/00
CPC分类号： H01L21/67253 , H01L21/67242 , H01L21/67248 , H01L21/67288 , H01L2924/0002 , H01L2924/00
摘要： A method and system for non-invasive sensing and monitoring of a processing system (100, 200) employed in semiconductor manufacturing. The method allows for detecting and diagnosing drift and failures in the processing system (100, 200) and taking the appropriate correcting measures. The method includes positioning at least one non-invasive sensor (247a-d, 248a-b, 249a-b, 250a-c, 906) on an outer surface of a system component of the processing system (200), where the at least one invasive sensor forms a wireless sensor network (902), acquiring a sensor signal from the at least one non-invasive sensor (247a-d, 248a-b, 249a-b, 250a-c, 906), where the sensor signal tracks a gradual or abrupt change in a processing state of the system component during flow of a process gas in contact with the system component, and extracting the sensor signal from the wireless sensor network (902) to store and process the sensor signal. In one embodiment, the non-invasive sensor (247a-d, 248a-b, 249a-b, 250a-c, 906) can be an accelerometer sensor and the wireless sensor network (902) can be motes-based.
摘要翻译：一种用于半导体制造中使用的处理系统（100,200）的非侵入式感测和监测的方法和系统。该方法允许检测和诊断处理系统（100,200）中的漂移和故障并采取适当的校正措施。该方法包括将至少一个非侵入式传感器（247a-d，248a-b，249a-b，250a-c，906）定位在处理系统（200）的系统部件的外表面上，其中至少一个入侵传感器形成无线传感器网络（902），从至少一个非侵入式传感器（247a-d，248a-b，249a-b，250a-c，906）获取传感器信号，其中传感器信号跟踪在与系统部件接触的处理气体的流动期间系统部件的处理状态的逐渐或突然的变化，以及从无线传感器网络（902）提取传感器信号以存储和处理传感器信号。在一个实施例中，非侵入式传感器（247a-d，248a-b，249a-b，250a-c，906）可以是加速度计传感器，并且无线传感器网络（902）可以是基于空白的。

3. 发明申请

WO2007115136A1 MONITORING A MONOLAYER DEPOSITION (MLD) SYSTEM USING A BUILT-IN SELF TEST (BIST) TABLE 审中-公开
标题翻译：使用内置自检（BIST）表监测单层沉积（MLD）系统
公开(公告)号：WO2007115136A1
公开(公告)日：2007-10-11
申请号：PCT/US2007/065568
申请日：2007-03-30
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC , KAUSHAL, Sanjeev , PANDEY, Pradeep , SUGISHIMA, Kenji
发明人： KAUSHAL, Sanjeev , PANDEY, Pradeep , SUGISHIMA, Kenji
IPC分类号： G05B19/418 , G05B23/02
CPC分类号： G05B19/41875 , C23C16/45546 , C23C16/52 , G05B23/0254 , G05B2219/11 , G05B2219/1112 , G05B2219/37514 , G05B2219/37533 , G05B2219/45031 , Y02P90/14 , Y02P90/22 , Y02P90/26
摘要： A method of monitoring a processing system (100, 200, 300) in real-time using low-pressure based modeling techniques that include processing one or more of wafers (W) in a processing chamber (50, 104, 202); determining a measured dynamic process response for a rate of change for a process parameter; executing a real-time dynamic model to generate a predicted dynamic process response; determining a dynamic estimation error using a difference between the predicted dynamic process response and the expected process response; and comparing the dynamic estimation error to operational limits.
摘要翻译：一种监视处理系统（100,200,300）的方法，用于实时使用基于低压的建模技术，其包括处理处理室（50,104,202）中的一个或多个晶片（W）; 确定针对过程参数的变化率的测量的动态过程响应; 执行实时动态模型以产生预测的动态过程响应; 使用预测的动态过程响应和预期过程响应之间的差来确定动态估计误差; 并将动态估计误差与运算极限进行比较。

4. 发明申请

WO2006081023A2 METHOD AND APPARATUS FOR MONOLAYER DEPOSITION (MLD) 审中-公开
标题翻译：单层沉积方法和装置（MLD）
公开(公告)号：WO2006081023A2
公开(公告)日：2006-08-03
申请号：PCT/US2005/046495
申请日：2005-12-21
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , KAUSHAL, Sanjeev , PANDEY, Pradeep , SUGISHIMA, Kenji
发明人： KAUSHAL, Sanjeev , PANDEY, Pradeep , SUGISHIMA, Kenji
IPC分类号： C23C16/455 , C30B25/14 , C30B15/16 , C23C16/52
CPC分类号： C23C16/45527 , C23C16/52
摘要： An adaptive real time thermal processing system is presented that includes a multivariable controller. The method includes creating a dynamic model of the MLD processing system and incorporating virtual sensors in the dynamic model. The method includes using process recipes comprising intelligent set points, dynamic models, and/or virtual sensors.
摘要翻译：提出了一种包括多变量控制器的自适应实时热处理系统。该方法包括创建MLD处理系统的动态模型，并将虚拟传感器并入动态模型中。该方法包括使用包括智能设定点，动态模型和/或虚拟传感器的过程配方。

5. 发明申请

WO2007115084A1 MONITORING A SYSTEM DURING LOW-PRESSURE PROCESSES 审中-公开
标题翻译：在低压过程中监测系统
公开(公告)号：WO2007115084A1
公开(公告)日：2007-10-11
申请号：PCT/US2007/065483
申请日：2007-03-29
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , KAUSHAL, Sanjeev , PANDEY, Pradeep , SUGISHIMA, Kenji
发明人： KAUSHAL, Sanjeev , PANDEY, Pradeep , SUGISHIMA, Kenji
IPC分类号： G05B19/418 , G05B23/02
CPC分类号： G05B19/41875 , C23C16/52 , G05B23/0254 , G05B2219/37514 , G05B2219/37533 , G05B2219/45031 , Y02P90/22 , Y02P90/26
摘要： A method of monitoring a processing system (100, 200, 300) in real-time using low-pressure based modeling techniques that include processing one or more of wafers (W) in a processing chamber (50, 104, 202); determining a measured dynamic process response for a rate of change for a process parameter; executing a real-time dynamic model to generate a predicted dynamic process response; determining a dynamic estimation error using a difference between the predicted dynamic process response and the expected process response; and comparing the dynamic estimation error to operational limits.
摘要翻译：一种监视处理系统（100,200,300）的方法，用于实时使用基于低压的建模技术，其包括处理处理室（50,104,202）中的一个或多个晶片（W）; 确定针对过程参数的变化率的测量的动态过程响应; 执行实时动态模型以产生预测的动态过程响应; 使用预测的动态过程响应和预期过程响应之间的差来确定动态估计误差; 并将动态估计误差与运算极限进行比较。

6. 发明申请

WO2007030194A1 BUILT-IN SELF TEST FOR A THERMAL PROCESSING SYSTEM 审中-公开
标题翻译：用于热处理系统的内置自检
公开(公告)号：WO2007030194A1
公开(公告)日：2007-03-15
申请号：PCT/US2006/026220
申请日：2006-07-06
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , KAUSHAL, Sanjeev , PANDEY, Pradeep , SUGISHIMA, Kenji , DIP, Anthony , SMITH, David , JOE, Raymond , GANDHI, Sundar
发明人： KAUSHAL, Sanjeev , PANDEY, Pradeep , SUGISHIMA, Kenji , DIP, Anthony , SMITH, David , JOE, Raymond , GANDHI, Sundar
CPC分类号： H01L22/10 , G05B23/0254 , H01L21/67248
摘要： A method of monitoring a thermal processing system (100, 200) in real-time using a built-in self test (BIST) table that includes positioning a plurality of wafers (W) in a processing chamber (202) in the thermal processing system (100, 200); executing a real-time dynamic model (330) to generate a predicted dynamic process response for the processing chamber (202) during the processing time; creating a first measured dynamic process response; determining a dynamic estimation error using a difference between the predicted dynamic process response and the measured dynamic process response; and comparing the dynamic estimation error to operational thresholds established by one or more rules in the BiST table.
摘要翻译：一种使用内置自检（BIST）表实时监测热处理系统（100,200）的方法，其包括将多个晶片（W）定位在热处理系统中的处理室（202）中（100,200）; 执行实时动态模型（330）以在处理时间期间生成用于处理室（202）的预测动态过程响应; 创建第一个测量动态过程响应; 使用预测的动态过程响应和测量的动态过程响应之间的差来确定动态估计误差; 并将动态估计误差与由BiST表中的一个或多个规则建立的操作阈值进行比较。

7. 发明申请

WO2007115138A1 METHOD FOR CREATING A BUILT-IN SELF TEST (BIST) TABLE FOR MONITORING A MONOLAYER DEPOSITION (MLD) SYSTEM 审中-公开
标题翻译：一种用于监测单层沉积（MLD）系统的内置自检（BIST）表的方法
公开(公告)号：WO2007115138A1
公开(公告)日：2007-10-11
申请号：PCT/US2007/065573
申请日：2007-03-30
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , KAUSHAL, Sanjeev , PANDEY, Pradeep , SUGISHIMA, Kenji
发明人： KAUSHAL, Sanjeev , PANDEY, Pradeep , SUGISHIMA, Kenji
IPC分类号： G05B19/418 , G05B23/02
CPC分类号： G05B19/41875 , C23C16/45546 , C23C16/52 , G05B23/0254 , G05B2219/37514 , G05B2219/37533 , G05B2219/45031 , Y02P90/22 , Y02P90/26
摘要： A method of monitoring a processing system (100, 200, 300) in real-time using low-pressure based modeling techniques that include processing one or more of wafers (W) in a processing chamber (50, 104, 202), calculating dynamic estimation errors for the precursor and/or purging process, and determining if the dynamic estimation errors can be associated with pre-existing BIST rules for the process. When the dynamic estimation error cannot be associated with a pre-existing BIST rule, the method includes either modifying the BlST table by creating a new BIST rule for the process, or stopping the process when a new BIST rule cannot be created.
摘要翻译：一种使用基于低压的建模技术来实时监控处理系统（100,200,300）的方法，所述建模技术包括处理处理室（50,104,202）中的一个或多个晶片（W），计算动态前导和/或清除过程的估计误差，以及确定动态估计误差是否可以与该过程的预先存在的BIST规则相关联。当动态估计错误不能与预先存在的BIST规则相关联时，该方法包括通过为进程创建一个新的BIST规则来修改BlST表，或者在无法创建新的BIST规则时停止该进程。

8. 发明申请

WO2007030193A1 BUILT-IN SELF TEST FOR A THERMAL PROCESSING SYSTEM 审中-公开
标题翻译：用于热处理系统的内置自检
公开(公告)号：WO2007030193A1
公开(公告)日：2007-03-15
申请号：PCT/US2006/026128
申请日：2006-07-06
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , KAUSHAL, Sanjeev , PANDEY, Pradeep , SUGISHIMA, Kenji
发明人： KAUSHAL, Sanjeev , PANDEY, Pradeep , SUGISHIMA, Kenji
IPC分类号： G05B19/418 , G05B23/02
CPC分类号： H01L22/10 , G05B19/41875 , G05B23/0254 , H01L21/67248 , Y02P90/22
摘要： A method of creating and/or modifying a built-in self test (BIST) table for monitoring a thermal processing system (100, 200) in real-time that includes positioning a plurality of wafers (W) in a processing chamber (202) in the thermal processing system (100, 200); executing a real-time dynamic model (330) to generate a predicted dynamic process response; creating a measured dynamic process response; determining a dynamic estimation error; determining if the determined dynamic estimation error can be associated with a pre-existing BIST rule in the BIST table; creating a new BIST rule when the dynamic estimation error cannot be associated with any pre-existing BIST rule in the BIST table; and stopping the process when a new BIST rule cannot be created.
摘要翻译：一种创建和/或修改内置自检（BIST）表的方法，用于实时监控热处理系统（100,200），包括将多个晶片（W）定位在处理室（202）中，在热处理系统（100,200）中; 执行实时动态模型（330）以产生预测的动态过程响应; 创建一个测量的动态过程响应; 确定动态估计误差; 确定所确定的动态估计误差是否可以与BIST表中的预先存在的BIST规则相关联; 当动态估计错误不能与BIST表中的任何预先存在的BIST规则相关联时，创建新的BIST规则; 并在无法创建新的BIST规则时停止该进程。

9. 发明申请

WO2006107523A1 WAFER CURVATURE ESTIMATION, MONITORING, AND COMPENSATION 审中-公开
标题翻译：波形曲线估计，监测和补偿
公开(公告)号：WO2006107523A1
公开(公告)日：2006-10-12
申请号：PCT/US2006/009019
申请日：2006-03-13
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , KAUSHAL, Sanjeev , SUGISHIMA, Kenji , PANDEY, Pradeep
发明人： KAUSHAL, Sanjeev , SUGISHIMA, Kenji , PANDEY, Pradeep
IPC分类号： H01L21/00 , H01L21/66
CPC分类号： H01L21/67248 , H01L21/67288 , H01L22/12
摘要： A method (2100) of determining wafer curvature in real-time is presented; The method (2100) includes establishing a first temperature profile for a hotplate (58, 620) surface, where the hotplate (58, 620) surface is divided into a plurality of temperature control zones. The method (2100) further includes positioning a wafer (14, 690) at a first height above the hotplate (58, 620) surface and determining a second temperature profile for the hotplate (58, 620) surface. The wafer curvature is then determined by using the second temperature profile. Also, a dynamic model (904) of a processing system (900) is presented and wafer curvature can be incorporated into the dynamic model (904).
摘要翻译：提出了一种实时确定晶片曲率的方法（2100）。方法（2100）包括建立用于加热板（58,620）表面的第一温度分布，其中加热板（58,620）表面被分成多个温度控制区。方法（2100）还包括将晶片（14,690）定位在加热板（58,620）表面上方的第一高度处，并确定用于加热板（58,620）表面的第二温度曲线。然后通过使用第二温度分布来确定晶片曲率。此外，呈现处理系统（900）的动态模型（904），并且可以将晶片曲率并入到动态模型（904）中。

10. 发明申请

WO2007115080A1 MONITORING A SINGLE-WAFER PROCESSING SYSTEM 审中-公开
标题翻译：监测单波加工系统
公开(公告)号：WO2007115080A1
公开(公告)日：2007-10-11
申请号：PCT/US2007/065473
申请日：2007-03-29
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , KAUSHAL, Sanjeev , PANDEY, Pradeep , SUGISHIMA, Kenji
发明人： KAUSHAL, Sanjeev , PANDEY, Pradeep , SUGISHIMA, Kenji
IPC分类号： G05B19/418 , G05B23/02
CPC分类号： G05B19/41875 , C23C16/52 , G05B23/0254 , G05B2219/37514 , G05B2219/37533 , G05B2219/45031 , Y02P90/22 , Y02P90/26
摘要： A method of monitoring a single-wafer processing system (100, 200, 300) in real-time using low-pressure based modeling techniques that include processing a wafer (W) in a processing chamber (50, 104, 202); determining a measured dynamic process response for a rate of change for a process parameter; executing a real-time dynamic model to generate a predicted dynamic process response; determining a dynamic estimation error using a difference between the predicted dynamic process response and the expected process response; and comparing the dynamic estimation error to operational limits.
摘要翻译：一种使用包括处理处理室（50,104,202）中的晶片（W）的基于低压的建模技术来实时监测单晶片处理系统（100,200,300）的方法; 确定针对过程参数的变化率的测量的动态过程响应; 执行实时动态模型以产生预测的动态过程响应; 使用预测的动态过程响应和预期过程响应之间的差来确定动态估计误差; 并将动态估计误差与运算极限进行比较。

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