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1. 发明申请

WO2007134035A2 IN-SITU FORMATION OF OXIDIZED ALUMINUM NITRIDE FILMS 审中-公开
标题翻译：氧化氮化铝膜的现场形成
公开(公告)号：WO2007134035A2
公开(公告)日：2007-11-22
申请号：PCT/US2007/068447
申请日：2007-05-08
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , DIP, Anthony , REID, Kimberly, G.
发明人： DIP, Anthony , REID, Kimberly, G.
IPC分类号： C23C16/30 , C23C16/56
CPC分类号： C23C16/303 , C23C16/56
摘要： A method is provided for in-situ formation of a thin oxidized AlN film on a substrate. The method includes providing the substrate in a process chamber (10), depositing an AfN film on the substrate (40), and post-treating the AIN film with exposure to a nitrogen and oxygen-containing gas. The post-treating increases the dielectric constant of the AIN film with substantially no increase in the AIN film thickness. The method can also include pre-treating the substrate (40) prior to AIN deposition, post-anneaiing the AIN film before or after the post-treatment, or both.
摘要翻译：提供了一种在衬底上原位形成薄的氧化的AlN膜的方法。该方法包括在处理室（10）中提供衬底，在衬底（40）上沉积AfN膜，以及在暴露于含氮和含氧气体的情况下对AlN膜进行后处理。后处理增加了AIN膜的介电常数，而AlIN膜厚度基本上没有增加。该方法还可以包括在AIN沉积之前预处理衬底（40），在后处理之前或之后对AlN膜进行后处理或二者。

2. 发明申请

WO2007019449A1 IN-SITU ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：现场原子层沉积
公开(公告)号：WO2007019449A1
公开(公告)日：2007-02-15
申请号：PCT/US2006/030735
申请日：2006-08-04
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , DIP, Anthony , SASAKI, Sadao , TOELLER, Michael , REID, Kimberly, G.
发明人： DIP, Anthony , SASAKI, Sadao , TOELLER, Michael , REID, Kimberly, G.
IPC分类号： C23C16/448 , C23C16/455 , C23C16/40 , H01L21/316
CPC分类号： H01L21/3141 , C23C16/0236 , C23C16/405 , C23C16/45546 , C23C16/45553 , C23C16/56 , H01L21/31645
摘要： An in situ method for forming a HfO2 high-k dielectric layer in a batch wafer processing system (1, 100). The method comprises first loading a plurality of wafers (40, 110) into a process chamber (10, 102), and then pre-treating the plurality of wafers (40, 110) in the process chamber (10, 102) with a first oxidizer. After pre-treating the wafers (40, 110), and without removing the wafers (40, 110) from the process chamber (10, 102), the method then comprises depositing HfO2 on the plurality of wafers (40, 110) by atomic layer deposition, which comprises a plurality of deposition cycles, each cycle comprising alternating exposure of the plurality of wafers (40, 110) in the process chamber (40, 110) to a second oxidizer and a hafnium precursor. The hafnium precursor is selected from hafnium tert-butoxide (HTB) or hafnium tetra-diethylamide (TDEAH).
摘要翻译：一种用于在间歇晶片处理系统（1,100）中形成HfO 2高k电介质层的原位方法。该方法包括首先将多个晶片（40,110）装载到处理室（10,102）中，然后用处理室（10,102）预处理处理室（10,102）中的多个晶片（40,110）氧化剂。在对晶片（40,110）进行预处理之后，并且不从处理室（10,102）移除晶片（40,110），然后该方法包括通过原子沉积多个晶片（40,110）上的HfO 2 层沉积，其包括多个沉积循环，每个循环包括将处理室（40,110）中的多个晶片（40,110）交替暴露于第二氧化剂和铪前体。铪前体选自叔丁醇铪（HTB）或四乙基铪铪（TDEAH）。

3. 发明申请

WO2005027189A2 FORMATION OF A METAL-CONTAINING FILM BY SEQUENTIAL GAS EXPOSURE IN A BATCH TYPE PROCESSING SYSTEM 审中-公开
标题翻译：在批次式加工系统中通过连续气体暴露形成含金属膜
公开(公告)号：WO2005027189A2
公开(公告)日：2005-03-24
申请号：PCT/US2004/025606
申请日：2004-09-02
申请人： TOKYO ELECTRON LIMITED , DIP, Anthony , TOELLER, Michael , REID, Kimberly, G.
发明人： DIP, Anthony , TOELLER, Michael , REID, Kimberly, G.
IPC分类号： H01L
CPC分类号： C23C16/45531 , C23C16/308 , C23C16/401 , C23C16/405 , C23C16/45546
摘要： A method is provided for forming a metal-containing film on a substrate by a sequential gas exposure process in a batch type processing system. A metal-containing film can be formed on a substrate by providing a substrate in a process chamber of a batch type processing system, heating the substrate, sequentially flowing a pulse of a metal-containing precursor gas and a pulse of a reactant gas in the process chamber, and repeating the flowing processes until a metal-containing film with desired film properties is formed on the substrate. The method can form a metal-oxide film, for example Hf0 2 and Zr0 2 , a metal-oxynitride film, for example Hf x O Z N w and Hf x O Z N w , a metal-silicate film, for example Hf x Si y O Z and Zr x Si y O Z , and a nitrogen-containing metal-silicate film, for example Hf x Si y O Z N w and Zr x Si y O Z N,. A processing tool containing a batch type processing system for forming a metal-containing film by a sequential gas exposure process is provided.
摘要翻译：提供了一种通过在间歇式处理系统中通过连续气体曝光工艺在基板上形成含金属膜的方法。通过在间歇式处理系统的处理室中设置基板，在衬底上形成含金属膜，加热衬底，顺序地将含金属的前体气体的脉冲和反应气体的脉冲流入并且重复流动过程，直到在基底上形成具有所需膜特性的含金属膜。该方法可以形成金属氧化物膜，例如HfO 2和ZrO 2，金属氧氮化物膜，例如Hf x O z N w和Hf x O z N w，金属硅酸盐膜，例如Hf x Se y O z和Zr x S y O y O，以及含氮金属硅酸盐膜，例如HfxSiyOZNw和ZrxSiyOZN。提供了一种包含用于通过连续气体曝光工艺形成含金属膜的间歇式处理系统的加工工具。

4. 发明申请

WO2012044622A2 LOW-TEMPERATURE DIELECTRIC FILM FORMATION BY CHEMICAL VAPOR DEPOSITION 审中-公开
标题翻译：通过化学蒸气沉积形成的低温电介质膜
公开(公告)号：WO2012044622A2
公开(公告)日：2012-04-05
申请号：PCT/US2011/053503
申请日：2011-09-27
申请人： TOKYO ELECTRON LIMITED , DIP, Anthony , REID, Kimberly, G.
发明人： DIP, Anthony , REID, Kimberly, G.
IPC分类号： H01L21/26
CPC分类号： H01L21/0214 , H01L21/02164 , H01L21/02271 , H01L21/28185 , H01L21/28202 , H01L21/28211 , H01L21/28273 , H01L21/3105
摘要： A method for depositing a dielectric film on a substrate includes positioning a plurality of substrates in a process chamber, heating the process chamber to a deposition temperature between 400°C and less than 650°C, flowing a first process gas comprising water vapor into the process chamber, flowing a second process gas comprising dichlorosilane (DCS) into the process chamber, establishing a gas pressure of less than 2 Torr, and reacting the first and second process gases to thermally deposit a silicon oxide film on the plurality of substrates. One embodiment further includes flowing a third process gas comprising nitric oxide (NO) gas into the process chamber while flowing the first process gas and the second process gas; and reacting the oxide film with the third process gas to form a silicon oxynitride film on the substrate.
摘要翻译：用于在基板上沉积介电膜的方法包括将多个基板定位在处理室中，将处理室加热至400℃至小于650℃的沉积温度，使包含水蒸气的第一工艺气体流入处理室，使包含二氯硅烷（DCS）的第二工艺气体流入处理室，建立小于2Torr的气体压力，并使第一和第二工艺气体反应以在多个衬底上热沉积氧化硅膜。一个实施例还包括在流过第一处理气体和第二处理气体的同时使包含一氧化氮（NO）气体的第三处理气体流入处理室; 并使氧化膜与第三工艺气体反应，以在衬底上形成氮氧化硅膜。

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