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1. 发明申请

WO2008021598A1 THERMAL PROCESSING SYSTEM WITH IMPROVED PROCESS GAS FLOW AND METHOD FOR INJECTING A PROCESS GAS INTO A THERMAL PROCESSING SYSTEM 审中-公开
标题翻译：具有改进工艺流程的热处理系统和将工艺气体注入热处理系统的方法
公开(公告)号：WO2008021598A1
公开(公告)日：2008-02-21
申请号：PCT/US2007/068474
申请日：2007-05-08
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , DIP, Anthony , ASARI, Shinji , GANDHI, Meenakshisundaram
发明人： DIP, Anthony , ASARI, Shinji , GANDHI, Meenakshisundaram
IPC分类号： H01L21/00
CPC分类号： H01L21/67109 , C23C16/45578 , C23C16/45591 , H01L21/67098 , H01L21/67103 , H01L21/67115
摘要： A thermal processing system (10) with improved gas flow and method for injecting a process gas into a thermal processing system (10). The thermal processing system (10) has an injection section (50; 82) with injection outlets (52) that inject process gas into a processing space (14) and a delivery section (46; 81; 104) that delivers process gas to the injection section (50). The delivery section (46; 81; 104) may be coupled with the injection section (50; 82) at an inlet disposed between opposite ends (53, 53) of the injection section (50; 82). A fluid lumen (56) of the injection section (50; 82) may have a larger cross-sectional area than a fluid lumen (45) of the delivery section (46; 81; 104). The thermal processing system (10) may include an inner tube (12), which surrounds the processing space (14), having a slit (16) through which the processing space (14) communicates with an annular pumping space (72) defined between the inner tube (12) and an outer tube (12) of the thermal processing system (10).
摘要翻译：一种具有改善的气流的热处理系统（10）和将工艺气体注入热处理系统（10）的方法。热处理系统（10）具有注射部分（50; 82），其具有注入口（52），其将处理气体注入处理空间（14）和输送部分（46; 81; 104），其将处理气体输送到注射部分（50）。输送部分（46; 81; 104）可以在设置在喷射部分（50; 82）的相对端（53,53）之间的入口处与喷射部分（50; 82）联接。注射部分（50; 82）的流体腔（56）可以具有比输送部分（46; 81; 104）的流体腔（45）更大的横截面面积。热处理系统（10）可以包括围绕处理空间（14）的内管（12），其具有狭缝（16），处理空间（14）通过其与环形泵送空间（72）连通，内管（12）和热处理系统（10）的外管（12）。

2. 发明申请

WO2011123369A1 ATOMIC LAYER DEPOSITION OF SILICON AND SILICON-CONTAINING FILMS 审中-公开
标题翻译：原子层沉积硅和含硅膜
公开(公告)号：WO2011123369A1
公开(公告)日：2011-10-06
申请号：PCT/US2011/030116
申请日：2011-03-26
申请人： TOKYO ELECTRON LIMITED , JOE, Raymond , GANDHI, Meenakshisundaram
发明人： JOE, Raymond , GANDHI, Meenakshisundaram
IPC分类号： H01L21/44
CPC分类号： H01L21/02532 , C23C16/0227 , C23C16/24 , C23C16/45527 , C23C16/45546 , H01L21/0237 , H01L21/02573 , H01L21/0262
摘要： A method is provided for depositing silicon and silicon-containing films by atomic layer deposition (ALD). The method includes disposing the substrate in a batch processing system configured for performing ALD of the silicon-containing film, exposing the substrate to a non-saturating amount of a first precursor containing silicon, and evacuating or purging the first precursor from the batch processing system. The method further includes exposing the substrate to a saturating amount of a second precursor containing silicon or a dopant, where only one of the first and second precursors contain a halogen, and a reaction of the first and second precursors on the substrate forms a silicon or silicon-containing film and a volatile hydrogen-halogen (HX) by-product, evacuating or purging the second precursor and the HX by-product from the batch processing system, and repeating the exposing and evacuation or purging steps until the silicon or silicon-containing film has a desired thickness.
摘要翻译：提供了通过原子层沉积（ALD）沉积硅和含硅膜的方法。该方法包括将衬底设置在配置用于执行含硅膜的ALD的间歇处理系统中，将衬底暴露于非饱和量的含硅的第一前体，以及从批处理系统抽空或清除第一前体。该方法还包括将衬底暴露于含有硅或掺杂剂的饱和量的第二前体，其中第一和第二前体中只有一个含有卤素，并且衬底上的第一和第二前体的反应形成硅或含硅膜和挥发性氢 - 卤素（HX）副产物，从间歇处理系统排出或吹扫第二前体和HX副产物，并重复曝光和排空或清除步骤，直到硅或硅 - 含有膜的膜具有期望的厚度。

3. 发明申请

WO2013173249A1 FORMING PATTERNS USING BLOCK COPOLYMERS AND ARTICLES 审中-公开
标题翻译：使用块状共聚物和文章形成图案
公开(公告)号：WO2013173249A1
公开(公告)日：2013-11-21
申请号：PCT/US2013/040815
申请日：2013-05-13
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON U.S. HOLDINGS, INC.
发明人： RATHSACK, Benjamen, M. , SOMERVELL, Mark, H. , GANDHI, Meenakshisundaram
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/40 , G03F7/0002 , G03F7/2041 , Y10T428/24802
摘要： A method for patterning a layered structure is provided that includes performing photolithography to provide a developed prepattern layer on a horizontal surface of an underlying substrate, modifying the prepattern layer to form spaced apart inorganic material guides, casting and annealing a layer of a self-assembling block copolymer to form laterally-spaced cylindrical features, forming a pattern by selectively removing at least a portion of one block of the self-assembling block copolymer, and transferring the pattern to the underlying substrate. The method is suitable for making sub-50 nm patterned layered structures.
摘要翻译：提供一种用于图案化层状结构的方法，其包括进行光刻以在下面的基底的水平表面上提供显影的预制图层，修改预制图案层以形成间隔开的无机材料导向件，将自组装层嵌段共聚物以形成横向间隔开的圆柱形特征，通过选择性地除去自组装嵌段共聚物的一个嵌段的至少一部分，并将图案转移到下面的基底上形成图案。该方法适用于制备低于50nm的层状结构。

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