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1. 发明授权

US09449844B2 Etching method, etching apparatus, and storage medium 有权
标题翻译：蚀刻方法，蚀刻装置和存储介质
公开(公告)号：US09449844B2
公开(公告)日：2016-09-20
申请号：US13624652
申请日：2012-09-21
申请人： TOKYO ELECTRON LIMITED , HYOGO PREFECTURE
发明人： Kenichi Hara , Isao Yamada , Noriaki Toyoda , Takashi Hayakawa
IPC分类号： C23C14/00 , C23C14/32 , H01L21/3213 , C23F4/02 , H01L21/3065
CPC分类号： H01L21/32136 , C23F4/02 , H01L21/3065
摘要： An etching method for anisotropically etching a Cu film on a substrate surface includes providing a substrate having a Cu film on a surface thereof in a chamber and supplying an organic compound into the chamber while setting the inside of the chamber to a vacuum state and irradiating an oxygen gas cluster ion beam to the Cu film. The etching method further includes oxidizing Cu or the Cu film to a copper oxide by oxygen gas cluster ions in the oxygen gas cluster ion beam and anisotropically etching the Cu film by reacting the copper oxide and the organic compound.
摘要翻译：用于在基板表面上各向异性蚀刻Cu膜的蚀刻方法包括在室内将表面上具有Cu膜的基板提供到室中，并且将室内的内部设置为真空状态并向其中照射氧气团簇离子束到Cu膜。蚀刻方法还包括在氧气簇离子束中通过氧气团簇离子将Cu或Cu膜氧化成氧化铜，并通过使氧化铜和有机化合物反应各向异性蚀刻Cu膜。

2. 发明授权

US08951908B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08951908B2
公开(公告)日：2015-02-10
申请号：US14221711
申请日：2014-03-21
申请人： Tokyo Electron Limited
发明人： Kenichi Hara , Takashi Hayakawa , Mariko Ozawa
IPC分类号： H01L21/768 , H01L23/532 , H01L21/321 , H01L21/3213
CPC分类号： H01L21/76843 , H01L21/3212 , H01L21/32136 , H01L21/76834 , H01L21/7684 , H01L21/76883 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing semiconductor device includes preparing a structure including a substrate, an insulating layer on the substrate and having a recess, a barrier film on the insulating layer, and a copper film on the barrier such that the copper film is filling the recess with the barrier between the insulating layer and copper film, removing the copper film down to interface with the barrier such that copper wiring is formed in the recess, etching the wiring such that surface of the wiring is recessed from surface of the insulating layer, and removing the barrier from the surface of the insulating layer such that the surface of the insulating layer is exposed. The etching includes positioning the structure removed down to the barrier in organic compound atmosphere having vacuum state, and irradiating oxygen gas cluster ion beam on the surface of the wiring to anisotropically etch the wiring.
摘要翻译：一种半导体器件的制造方法，其特征在于，在基板上制作具有凹部的绝缘层，绝缘层上的阻挡膜和阻挡层上的铜膜的结构，使得铜膜以绝缘层和铜膜之间的阻挡层，将铜膜向下移动以与屏障接合，使得在凹槽中形成铜布线，蚀刻布线使得布线的表面从绝缘层的表面凹陷，并且去除从绝缘层的表面阻挡绝缘层的表面露出。蚀刻包括在具有真空状态的有机化合物气氛中将结构向下移动到阻挡层，并且在布线的表面上照射氧气团簇离子束以各向异性地蚀刻布线。

3. 发明申请

US20130306597A1 PROCESSING APPARATUS AND METHOD FOR PROCESSING METAL FILM 审中-公开
标题翻译：处理装置和处理金属膜的方法
公开(公告)号：US20130306597A1
公开(公告)日：2013-11-21
申请号：US13950658
申请日：2013-07-25
申请人： Tokyo Electron Limited
发明人： Isao Gunji , Hidenori Miyoshi , Kenichi Hara
IPC分类号： C23F1/02 , C23F1/08
CPC分类号： C23F1/02 , C23F1/08 , C23F4/00 , H01J27/026 , H01J37/08 , H01J37/3056 , H01J37/317 , H01J2237/0812 , H01J2237/3174 , H01L21/32136
摘要： A method for processing a metal film includes adiabatically expanding a mixed gas including an oxidation gas, a complexing gas and a rare gas in a processing chamber having a vacuum exhaust device such that a gas cluster beam is generated in the processing chamber, and irradiating the gas cluster beam upon a metal film formed on a surface of a workpiece in the processing chamber such that the gas cluster beam collides on the metal film including a metal element and the metal film is etched. The mixed gas includes the oxidation gas which oxidizes the metal element and forms an oxide, and the complexing gas which reacts with the oxide and forms an organometallic complex
摘要翻译：一种处理金属膜的方法包括在具有真空排气装置的处理室中绝热膨胀包括氧化气体，络合气体和稀有气体的混合气体，使得在处理室中产生气体束束并照射气体簇束在形成在处理室中的工件表面上的金属膜上，使得气体簇束与包括金属元素的金属膜碰撞并且金属膜被蚀刻。混合气体包括氧化金属元素并形成氧化物的氧化气体和与氧化物反应形成有机金属络合物的络合气体

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