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1. 发明申请

US20130075248A1 ETCHING METHOD, ETCHING APPARATUS, AND STORAGE MEDIUM 有权
标题翻译：蚀刻方法，蚀刻设备和存储介质
公开(公告)号：US20130075248A1
公开(公告)日：2013-03-28
申请号：US13624652
申请日：2012-09-21
申请人： TOKYO ELECTRON LIMITED , HYOGO PREFECTURE
发明人： Kenichi HARA , Isao YAMADA , Noriaki TOYODA , Takashi HAYAKAWA
IPC分类号： C23F4/02
CPC分类号： H01L21/32136 , C23F4/02 , H01L21/3065
摘要： Art etching method for anisotropically etching a Cu film on a substrate surface includes providing a substrate having a Cu film on a surface thereof in a chamber and supplying an organic compound into the chamber while setting the inside ox the chamber to a vacuum state and irradiating an oxygen gas cluster ion beam to the Cu film. The etching method further includes oxidizing Cu or the Cu film to a copper oxide by oxygen gas cluster ions in the oxygen gas cluster ion beam and anisotropically etching the Cu film by reacting the copper oxide and the organic compound.
摘要翻译：在基板表面上各向异性蚀刻Cu膜的艺术蚀刻方法包括在室内在其表面上提供具有Cu膜的基板，并将该有机化合物供给到室中，同时将该室内部设置为真空状态并照射氧气团簇离子束到Cu膜。蚀刻方法还包括在氧气簇离子束中通过氧气团簇离子将Cu或Cu膜氧化成氧化铜，并通过使氧化铜和有机化合物反应各向异性蚀刻Cu膜。

2. 发明申请

US20160045942A1 METHOD AND APPARATUS FOR REMOVING RESIDUE LAYER 审中-公开
标题翻译：用于去除残留层的方法和装置
公开(公告)号：US20160045942A1
公开(公告)日：2016-02-18
申请号：US14828080
申请日：2015-08-17
申请人： TOKYO ELECTRON LIMITED
发明人： Kenichi HARA , Naoshige FUSHIMI
IPC分类号： B08B6/00
CPC分类号： H01J37/3053 , H01J37/3007 , H01J2237/12 , H01J2237/30477 , H01L21/02071 , H01L43/12
摘要： A method of removing a residue layer formed on a side surface of each of a plurality of convex-shaped structure which stands together on a surface of a substrate or a side surface of a concave-shaped structure formed on the substrate, includes disposing an electrostatic lens between the substrate and a charged particle irradiation mechanism which linearly irradiates a beam of charged particles onto the substrate. The electrostatic lens diverges the beam of charged particles.
摘要翻译：在基板的表面或形成在基板上的凹状结构的侧面的多个凸状结构体的一侧的侧面上形成的残留层的除去方法包括：基板和带电粒子照射机构之间的透镜，其将带电粒子束线性地照射到基板上。静电透镜使带电粒子束发散。

3. 发明申请

US20150235842A1 TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：晶体管及其制造方法
公开(公告)号：US20150235842A1
公开(公告)日：2015-08-20
申请号：US14621815
申请日：2015-02-13
申请人： TOKYO ELECTRON LIMITED
发明人： Kenichi HARA , Shuji AZUMO
IPC分类号： H01L21/02 , H01L29/16 , H01L21/311 , H01L29/78
CPC分类号： H01L29/1608 , H01L21/02236 , H01L21/02252 , H01L21/045 , H01L21/049 , H01L21/302 , H01L21/30604 , H01L21/3065 , H01L29/78
摘要： A method for manufacturing a transistor includes irradiating an oxygen gas cluster ion beam onto a surface layer of a substrate which is made of silicon carbide and includes a channel area to become a channel to form a thin interface oxide film.
摘要翻译：晶体管的制造方法包括将氧气团簇离子束照射到由碳化硅构成的基板的表面层上，并且包括通道区域，形成通道以形成薄界面氧化物膜。

4. 发明申请

US20170025603A1 SEMICONDUCTOR DEVICE PRODUCTION METHOD AND PRODUCTION APPARATUS 审中-公开
标题翻译：半导体器件生产方法和生产设备
公开(公告)号：US20170025603A1
公开(公告)日：2017-01-26
申请号：US15124395
申请日：2015-02-23
申请人： TOKYO ELECTRON LIMITED
发明人： Kenichi HARA
IPC分类号： H01L43/12 , H01L43/02 , H01J37/32 , G11C11/16 , H01L43/10 , H01L43/08 , H01L21/67
CPC分类号： H01L43/12 , G11C11/161 , H01J37/32009 , H01J37/3244 , H01J2237/334 , H01L21/67069 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A method for producing a semiconductor device capable of showing its desired performance. In an etching module of a semiconductor device production apparatus, a plasma etching is performed for a stack structure of a wafer such that a portion not covered by a hard mask in the stack structure is etched away. The wafer having a pillar structure whose lateral side is inclined by the plasma etching is loaded into a trimming module. An acetic acid gas is supplied into a processing chamber of the trimming module. In addition, an oxygen GCIB is irradiated from a GCIB irradiating device toward the pillar structure.
摘要翻译：一种能够显示其期望性能的半导体器件的制造方法。在半导体器件制造装置的蚀刻模块中，对晶片的堆叠结构进行等离子体蚀刻，使得未被堆叠结构中的硬掩模覆盖的部分被蚀刻掉。具有侧面通过等离子体蚀刻而倾斜的柱结构的晶片被加载到修整模块中。将乙酸气体供给到修整模块的处理室中。另外，从GCIB照射装置向柱状结构照射氧气GCIB。

5. 发明申请

US20140295580A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND MANUFACTURING APPARATUS 审中-公开
标题翻译：制造半导体器件和制造设备的方法
公开(公告)号：US20140295580A1
公开(公告)日：2014-10-02
申请号：US14242240
申请日：2014-04-01
申请人： Tokyo Electron Limited
发明人： Kenichi HARA
IPC分类号： H01L43/12 , H01L43/02
CPC分类号： H01L43/12 , G11C11/161
摘要： A method for manufacturing a semiconductor device includes accommodating in a processing chamber a semiconductor structural body having a semiconductor substrate and a laminated structure formed on the semiconductor substrate and having multiple metal films including a noble-metal film, and generating a bias voltage on the semiconductor substrate while generating an oxygen plasma in the processing chamber such that a plasma treatment removes at least part of the noble-metal film in the laminated structure of the semiconductor structural body.
摘要翻译：一种制造半导体器件的方法包括：在处理室中容纳具有半导体衬底的半导体结构体和形成在所述半导体衬底上并具有多个金属膜的层叠结构，所述多个金属膜包括贵金属膜，并且在所述半导体上产生偏置电压同时在处理室中产生氧等离子体，使得等离子体处理除去半导体结构体的层叠结构中的至少一部分贵金属膜。

6. 发明申请

US20160035584A1 PLANARIZATION METHOD, SUBSTRATE TREATMENT SYSTEM, MRAM MANUFACTURING METHOD, AND MRAM ELEMENT 审中-公开
标题翻译：平面化方法，基板处理系统，MRAM制造方法和MRAM元件
公开(公告)号：US20160035584A1
公开(公告)日：2016-02-04
申请号：US14845617
申请日：2015-09-04
申请人： TOKYO ELECTRON LIMITED , UNIVERSITY OF HYOGO
发明人： Kenichi HARA , Noriaki TOYODA , Isao YAMADA
IPC分类号： H01L21/321 , H01L43/12 , H01L43/02
CPC分类号： H01L21/32115 , H01L21/32136 , H01L43/02 , H01L43/08 , H01L43/12
摘要： Provided is a planarization method capable of reliably planarizing a metal film formed before an MTJ element of an MRAM is formed. An MTJ element is formed by a sequence of processes including: forming a Cu film to be embedded in a SiO2 film in a wafer W; irradiating an oxygen GCIB to a surface of the Cu film to planarize the Cu film; forming a Ta film; forming a Ru film or a Ta film; irradiating the oxygen GCIB to the Ta film, the Ru film or the Ta film to planarize the Ta film, the Ru film or the Ta film; forming a PtMn film; irradiating the oxygen GCIB to a surface of the PtMn film to planarize the PtMn film; forming a CoFe thin film and a Ru thin film; and forming a CoFeB thin film, a MgO thin film and a CoFeB thin film in that order.
摘要翻译：提供一种能够可靠地平坦化形成在MRAM的MTJ元件之前形成的金属膜的平面化方法。通过一系列工艺形成MTJ元件，包括：在晶片W中形成嵌入SiO 2膜中的Cu膜; 将氧气GCIB照射到Cu膜的表面以使Cu膜平坦化; 形成Ta膜; 形成Ru膜或Ta膜; 将氧气GCIB照射到Ta膜，Ru膜或Ta膜上以使Ta膜，Ru膜或Ta膜平坦化; 形成PtMn膜; 将氧气GCIB照射到PtMn膜的表面以使PtMn膜平坦化; 形成CoFe薄膜和Ru薄膜; 并依次形成CoFeB薄膜，MgO薄膜和CoFeB薄膜。

7. 发明申请

US20140206187A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20140206187A1
公开(公告)日：2014-07-24
申请号：US14221711
申请日：2014-03-21
申请人： TOKYO ELECTRON LIMITED
发明人： Kenichi HARA , Takashi Hayakawa , Mariko Ozawa
IPC分类号： H01L21/768
CPC分类号： H01L21/76843 , H01L21/3212 , H01L21/32136 , H01L21/76834 , H01L21/7684 , H01L21/76883 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing semiconductor device includes preparing a structure including a substrate, an insulating layer on the substrate and having a recess, a barrier film on the insulating layer, and a copper film on the barrier such that the copper film is filling the recess with the barrier between the insulating layer and copper film, removing the copper film down to interface with the barrier such that copper wiring is formed in the recess, etching the wiring such that surface of the wiring is recessed from surface of the insulating layer, and removing the barrier from the surface of the insulating layer such that the surface of the insulating layer is exposed. The etching includes positioning the structure removed down to the barrier in organic compound atmosphere having vacuum state, and irradiating oxygen gas cluster ion beam on the surface of the wiring to anisotropically etch the wiring.
摘要翻译：一种半导体器件的制造方法，其特征在于，在基板上制作具有凹部的绝缘层，绝缘层上的阻挡膜和阻挡层上的铜膜的结构，使得铜膜以绝缘层和铜膜之间的阻挡层，将铜膜向下移动以与屏障接合，使得在凹槽中形成铜布线，蚀刻布线使得布线的表面从绝缘层的表面凹陷，并且去除从绝缘层的表面阻挡绝缘层的表面露出。蚀刻包括在具有真空状态的有机化合物气氛中将结构向下移动到阻挡层，并且在布线的表面上照射氧气团簇离子束以各向异性地蚀刻布线。

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