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1. 发明专利

JPH03234354A MANUFACTURE OF PARTIAL COMPOSITE MEMBER 失效
公开(公告)号：JPH03234354A
公开(公告)日：1991-10-18
申请号：JP2989990
申请日：1990-02-09
申请人： TOKAI CARBON KK
发明人： KOBAYASHI TOYOHIKO , FUKAZAWA MINORU
IPC分类号： B22D19/00 , B22D19/14 , C22C47/00 , C22C47/08 , C22C47/12
摘要： PURPOSE:To obtain a partial composite member having toughness and integrated structure by casting molten Al alloy under condition of removing oxide on surface of a sintered composite base material formed with mixed material of SiC whisker and Al alloy powder. CONSTITUTION:The mixed material of SiC whisker and Al alloy powder is sintered into the prescribed shape to manufacture the composite base material 1. Successively, plasma treatment is executed to joining face 12 in the composite base material 1 under reduced pressure condition of

2. 发明专利

JPH03197308A METAL IMPREGNATION UNIT FOR CARBONACEOUS MATERIAL 失效
公开(公告)号：JPH03197308A
公开(公告)日：1991-08-28
申请号：JP33982889
申请日：1989-12-26
申请人： TOKAI CARBON KK
发明人： NAKADA KUNIHIKO , KOBAYASHI TOYOHIKO
IPC分类号： C01B31/00 , F27B17/00
摘要： PURPOSE:To obtain the title unit intended to improve the homogeneity of the title carbonaceous materials by making the section of a holding member for immersion with a metallic melt of a Mo- or Ti-based metallic material or vitreous carbonaceous material. CONSTITUTION:A thermal insulating layer 5 and a heater 6 are provided inside the peripheral wall 2 of a reaction vessel 1, and a metallic melt container 9 holding a molten impregnating metal 8 is installed through a supporting member 7 in the space enclosed by the heater 6. A carbonaceous material 11 to be impregnated is suspended with a holding member 10, and a cylinder part 12 and the carbonaceous material 11 are connected through a metal immersion section 13 made of Mo- or Ti-based metal, an alloy consisting mainly thereof or vitreous carbonaceous material with nonporous structural texture. In a state where the interior of the pressure vessel 1 is held under a high pressure gaseous atmosphere, the holding member 10 is allowed to fall until the metal immersion section 13 comes into contact with the impregnating metal 8 and the carbonaceous material 11 is fully immersed into the metallic melt to make an impregnation treatment, thus obtaining a carbonaceous material with homogeneously metal-impregnated texture.

3. 发明专利

JPH0274591A DEPOSITION OF DIAMOND FILM 失效
公开(公告)号：JPH0274591A
公开(公告)日：1990-03-14
申请号：JP22529788
申请日：1988-09-08
申请人： TOKAI CARBON KK
发明人： KOBAYASHI TOYOHIKO , NAKAJIMA KENJI
IPC分类号： C30B29/04 , C23C16/26 , C23C16/27
摘要： PURPOSE:To efficiently provide a high quality diamond film having excellent adhesivity to a substrate without relating to the surface condition of the substrate and not causing any crack and peeling by limiting the C/H ratio of reactive gases is the vicinity of the substrate in a process for depositing the diamond film on the substrate with a high temperature plasma. CONSTITUTION:When thermal plasma is generated in mixed gases comprising a hydrocarbon gas, hydrogen gas and a rare gas with high frequency to deposit a diamond film on a substrate, the C/H ratio of the reactive gases at in the vicinity of the substrate is set to >=0.07. The setting of the above-mentioned condition increases the concentration of active seeds per unit volume in the plasma and cools the plasma in the vicinity of the substrate to produce a non- equilibrium state, consequently raising the supersaturation degree of the active seed concentration to bring a remarkable increase in the generation rate of nuclei.

4. 发明专利

JPH04108690A METHOD FOR SYNTHESIZING DIAMOND 失效
公开(公告)号：JPH04108690A
公开(公告)日：1992-04-09
申请号：JP1021990
申请日：1990-01-19
申请人： TOKAI CARBON KK
发明人： KOBAYASHI TOYOHIKO , ONO SHIYOUZOU
IPC分类号： C30B25/02 , C30B29/04
摘要： PURPOSE:To deposit diamond of good quality at high speed by setting the pressure conditions in a plasma production torch and in a diamond deposition chamber at values in specific ranges, respectively, in the synthesis of diamond by a high-frequency heat plasma method. CONSTITUTION:In a method for allowing a working gas consisting of rare gas and hydrogen (4: a gas feeding device) to produce high-frequency heat plasma (7: a high frequency electric power source, 8: work coil) in a plasma torch 1, introducing hydrocarbon gas into this plasma (from the gas feeding device 4), and depositing diamond onto the surface of a base material 10 by means of CVD in a successive formation chamber 2, the pressure (Pt) in the plasma torch 1 and the pressure (Pc) in the formation chamber 2 are set at 200-2000Torr and 150-1990Torr, respectively, and also the differential pressure (Pt-Pc) between the above is set at 1-500Torr. It is preferable to set the ratio of the inside diameter (Dt) of the plasma torch 1 to the inside diameter (Dn) of a throttle nozzle 11 between the plasma torch 1 and the formation chamber 2, (Dt/Dn) at 1.20-12.5.

5. 发明专利

JPH03247594A METHOD FOR SYNTHESIZING DIAMOND 失效
公开(公告)号：JPH03247594A
公开(公告)日：1991-11-05
申请号：JP4340990
申请日：1990-02-23
申请人： TOKAI CARBON KK
发明人： KOBAYASHI TOYOHIKO , NAKAJIMA KENJI
IPC分类号： C30B29/04
摘要： PURPOSE:To stably form a uniform film by performing a reaction while moving a substrate when diamond is synthesized on the surface of the substrate by plasma CVD method. CONSTITUTION:Inert gas and gaseous hydrogen are introduced from a nozzle cylinder 1 to form a flow of mixed working gas in a plasma generation chamber 5 and high frequency is impressed on a work coil 6 to generate plasma. A valve 9 is then opened to introduce a set amt. of gaseous hydrocarbon into the chamber 5 from the cylinder 1 after mixing with the mixed working gas, the hydrocarbon is uniformly diffused and dispersed in the plasma and the resulting carbon is deposited on a substrate 7. At this time, the substrate 7 is made rotatable with a motor 15 and a substrate holder 8 fitted to an inclined guide 12 is inclined or moved back and forth or right and left with a moving device 16. A rotary motion on a shaft 18 as a central axis is further combined and the substrate 7 is variously moved.

6. 发明专利

JPH03126696A METHOD FOR SYNTHESIZING DIAMOND 失效
公开(公告)号：JPH03126696A
公开(公告)日：1991-05-29
申请号：JP26420889
申请日：1989-10-09
申请人： TOKAI CARBON KK
发明人： KOBAYASHI TOYOHIKO , NAKAJIMA KENJI
IPC分类号： C01B31/06 , C30B29/04
摘要： PURPOSE:To attain a ratio of C to H corresponding to set conditions in an always stable plasma state in a system and to form a uniform diamond film having superior properties by mixing gaseous hydrocarbon with working gas composed of rare gas and gaseous hydrogen when diamond is synthesized with high frequency hot plasma. CONSTITUTION:A chamber 10 is kept vacuum, valves 3, 4 are opened to introduce gaseous hydrogen and rare gas from a nozzle tube 6 and a flow of the gaseous mixture is formed in a plasma generation chamber 7. High frequency is then impressed on a work coil 2 to generate plasma. A valve 5 and/or a valve 5' is opened, a prescribed amt. of gaseous hydrocarbon is mixed with the working gas and introduced into the chamber 7 from the tube 6 and a diamond film is formed on a substrate 8.

7. 发明专利

JPH04132686A METHOD FOR FORMING DIAMOND FILM IN GASEOUS PHASE 失效
公开(公告)号：JPH04132686A
公开(公告)日：1992-05-06
申请号：JP25363690
申请日：1990-09-21
申请人： TOKAI CARBON KK
发明人： KOBAYASHI TOYOHIKO
IPC分类号： C30B29/04
摘要： PURPOSE:To obtain a diamond film having excellent surface smoothness and uniform tissue by making one or more of condition factors consisting of a pressure in the system, the composition of gases and the temperature of a substrate fluctuate when the reaction gases are fed into the system to form the diamond film on the substrate. CONSTITUTION:Reaction gases (e.g. hydrocarbon, carbon oxide, organic solvent) are fed into a reaction system to form a diamond film on the surface of a substrate (e.g. Mo, Ti, W, Si, SiC, WC, TiC). While one or more of reaction condition factors consisting of the pressure in the system, the composition of the gases and the temperature of the substrate are periodically or continuously fluctuated, the reaction is allowed to proceed.

8. 发明专利

JPH0483795A METHOD FOR REGULATING TEMPERATURE OF SUBSTRATE FOR DEPOSITING DIAMOND 失效
公开(公告)号：JPH0483795A
公开(公告)日：1992-03-17
申请号：JP19988990
申请日：1990-07-26
申请人： TOKAI CARBON KK
发明人： KOBAYASHI TOYOHIKO , NAKAJIMA KENJI
IPC分类号： C30B25/16 , C30B29/04 , H01L21/205
摘要： PURPOSE:To enable regulation of a substrate temperature under prescribed plasma conditions to a desired level by boring a recessed part for fitting the substrate on the top surface of a substrate holder and engraving microgrooves capable of changing mutual contact surfaces on the contact surface of the substrate with the recessed part in carrying out vapor deposition of a synthetic diamond crystal film on the substrate surface. CONSTITUTION:The interior of a plasma producing chamber 12 in a thermal plasma torch is provided with a water-cooled jacket 15 and a recessed part 13 in which a substrate 9 is fitted is bored on the top surface. Furthermore, microgrooves 14 for enabling a change in mutual contact surfaces are engraved on the contact surface of the substrate 9 or the recessed part 13 or both surfaces thereof. Thereby, the substrate 9 is fitted and fixed to the recessed part 13 of a holder 10 without using an adhesive placed therebetween. The whole lower part of the substrate is uniformly cooled with water at the same time. The substrate temperature can be regulated by changing the formation degree of the microgrooves to smoothly advance the film formation of highquality diamond.

9. 发明专利

JPH02239189A VAPOR PHASE SYNTHESIS OF DIAMOND FILM 失效
公开(公告)号：JPH02239189A
公开(公告)日：1990-09-21
申请号：JP5722589
申请日：1989-03-09
申请人： TOKAI CARBON KK
发明人： KOBAYASHI TOYOHIKO
IPC分类号： C30B29/04
摘要： PURPOSE:To make transfer of a plasma torch free and to obtain a high-quality film at the required position of a substrate by injecting sheathing gas to the outer circumference of plasma flow generated in the atmospheric opening system and inhibiting oxygen from being diffused and infiltrated in a CVD method. CONSTITUTION:Plasma 9 is generated in the atmospheric opening system by impressing DC voltage between both electrodes 3, 4 and discharging DC to the actuation gas 1 obtained by mixing rare gas with hydrogen. The injection flow 10 is formed by injecting the sheathing gas 5 consisting of hydrogen and/or rare gas to the outer circumference of this plasma 9. Oxygen is inhibited from being diffused and infiltrated from the outside and the surface of a substrate 8 is maintained in the reductive atmosphere. Then a diamond film is deposited on the substrate 8 by a CVD method by introducing gaseous hydrocarbon 2 into the above-mentioned plasma 9.

10. 发明专利

JPS637344A PRODUCTION OF WHISKER PREFORM 失效
公开(公告)号：JPS637344A
公开(公告)日：1988-01-13
申请号：JP14944086
申请日：1986-06-27
申请人： TOKAI CARBON KK
发明人： ODA TAKASHI , KOBAYASHI TOYOHIKO
IPC分类号： B29C70/12 , B22D19/14 , B29B11/16 , B29C70/06 , B29K105/12 , C08J5/04 , C22C47/08 , C30B29/62 , C30B33/00 , C30B33/02 , D06M11/00 , D06M13/513 , D06M13/53 , D06M101/00
摘要： PURPOSE:To produce a whisker preform which contains no impurities by subjecting wet cake, which is obtd. by dispersing SiC whiskers into an org. silicon polymer soln. and filtering the soln., to a heat treatment at a specific temp. in an inert gaseous atmosphere after heating. CONSTITUTION:The SiC whiskers is uniformly dispersed into the soln. prepd. by dissolving the org. silicone polymer such as polycarbosilane at about 20-30wt% into an org. solvent such as benzene. The SiC whiskers are fine short fibers sized about 0.1-5.0mum diameter and about 10-500mum length and are preferably mixed at about 10-100g/l ratio with the soln. The wet whisker cake obtd. by filtering such liquid whisker dispersion is dried as it is or after compression to a prescribed density. The dried cake is then heat-treated at 1,100-1,500 deg.C in the inert gaseous atmosphere of Ar, etc. The SiC whisker preform which is strengthened in the structure by the sub-SiC formed from the above-mentioned org. silicone polymer by the heating reaction is thus obtd.

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