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1. 发明申请

US20130171403A1 PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL WITH A NON-HOMOGENEOUS LATTICE PLANE COURSE AND A MONOCRYSTALLINE SIC SUBSTRATE WITH A NON-HOMOGENEOUS LATTICE PLANE COURSE 有权
标题翻译：具有非均质平板电路课程的SIC体积单晶的生产方法和具有非均质平板电脑课程的单晶SIC衬底
公开(公告)号：US20130171403A1
公开(公告)日：2013-07-04
申请号：US13338639
申请日：2011-12-28
申请人： THOMAS STRAUBINGER , MICHAEL VOGEL , ANDREAS WOHLFART
发明人： THOMAS STRAUBINGER , MICHAEL VOGEL , ANDREAS WOHLFART
IPC分类号： B32B3/02 , C30B23/02
CPC分类号： H01L29/1608 , C30B23/02 , C30B29/36 , H01L29/04 , H01L29/0657 , Y10T428/219
摘要： A method is used for producing an SiC volume monocrystal by sublimation growth. During growth, by sublimation of a powdery SiC source material and by transport of the sublimated gaseous components into the crystal growth region, an SiC growth gas phase is produced there. The SiC volume monocrystal grows by deposition from the SiC growth gas phase on the SiC seed crystal. The SiC seed crystal is bent during a heating phase before such that an SiC crystal structure with a non-homogeneous course of lattice planes is adjusted, the lattice planes at each point have an angle of inclination relative to the direction of the center longitudinal axis and peripheral angles of inclination at a radial edge of the SiC seed crystal differ in terms of amount by at least 0.05° and at most by 0.2° from a central angle of inclination at the site of the center longitudinal axis.
摘要翻译：一种通过升华生长制备SiC体积单晶的方法。在生长过程中，通过升华粉末状SiC源材料，并将升华的气态成分转移到晶体生长区域中，生成SiC生长气相。 SiC体积单晶通过从SiC生长气相沉积在SiC晶种上而生长。 SiC晶种在加热阶段之前弯曲，使得调整具有不均匀平面过程的SiC晶体结构，每个点处的晶格面相对于中心纵向轴线的方向具有倾斜角，并且在SiC籽晶的径向边缘处的圆周倾角在中心纵轴的位置处与中心倾斜角度的不同在于至少0.05°且至多0.2°。

2. 发明申请

US20110086213A1 METHOD OF PRODUCING A SILICON CARBIDE BULK SINGLE CRYSTAL WITH THERMAL TREATMENT, AND LOW-IMPEDANCE MONOCRYSTALLINE SILICON CARBIDE SUBSTRATE 审中-公开
标题翻译：生产具有热处理的碳化硅单晶单晶和低阻抗单晶碳化硅基板的方法
公开(公告)号：US20110086213A1
公开(公告)日：2011-04-14
申请号：US12902704
申请日：2010-10-12
申请人： THOMAS STRAUBINGER , MICHAEL VOGEL , ANDREAS WOHLFART
发明人： THOMAS STRAUBINGER , MICHAEL VOGEL , ANDREAS WOHLFART
IPC分类号： C30B15/14 , C01B31/36 , B32B9/00
CPC分类号： C30B29/36 , C30B33/02
摘要： A silicon carbide bulk single crystal is produced at a growth temperature of up to 2200° C. by sublimation growth and is subjected to thermal aftertreatment after the sublimation growth. The bulk single crystal is brought to an aftertreatment temperature that is higher than a growth temperature. Very low-stress and low-dislocation SiC substrates can be produced from such a SiC bulk single crystal, the substrates additionally having a particularly low electrical resistivity. The SiC bulk single crystal is positioned within an SiC powder before the thermal aftertreatment and it is completely surrounded by the SiC powder during the thermal aftertreatment.
摘要翻译：通过升华生长在高达2200℃的生长温度下生产碳化硅本体单晶，并且在升华生长后进行热后处理。使大块单晶达到高于生长温度的后处理温度。非常低应力和低位错的SiC衬底可以由这种SiC体单晶制造，另外还具有特别低的电阻率。 SiC体单晶在热后处理之前位于SiC粉末内，并且在热后处理期间被SiC粉末完全包围。

3. 发明申请

US20130171402A1 PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL WITH A HOMOGENEOUS LATTICE PLANE COURSE AND A MONOCRYSTALLINE SIC SUBSTRATE WITH A HOMOGENEOUS LATTICE PLANE COURSE 有权
标题翻译：具有均质平板飞机课程的SIC体积单晶的生产方法和具有均质平面飞行课程的单晶SIC基板
公开(公告)号：US20130171402A1
公开(公告)日：2013-07-04
申请号：US13338694
申请日：2011-12-28
申请人： THOMAS STRAUBINGER , MICHAEL VOGEL , ANDREAS WOHLFART
发明人： THOMAS STRAUBINGER , MICHAEL VOGEL , ANDREAS WOHLFART
IPC分类号： C30B23/06 , B32B3/02
CPC分类号： C30B23/02 , C30B25/02 , C30B29/36 , Y10T428/21
摘要： A method is used for producing an SiC volume monocrystal by sublimation growth. Before the beginning of growth, an SiC seed crystal is arranged in a crystal growth region of a growth crucible and powdery SiC source material is introduced into an SiC storage region of the growth crucible. During the growth, by sublimation of the powdery SiC source material and by transport of the sublimated gaseous components into the crystal growth region, an SiC growth gas phase is produced there. The SiC volume monocrystal having a central center longitudinal axis grows by deposition from the SiC growth gas phase on the SiC seed crystal. The SiC seed crystal is heated substantially without bending during a heating phase before the beginning of growth, so that an SiC crystal structure with a substantially homogeneous course of lattice planes is provided in the SiC seed crystal.
摘要翻译：一种通过升华生长制备SiC体积单晶的方法。在生长开始之前，将SiC晶种布置在生长坩埚的晶体生长区域中，并且将SiC源材料引入生长坩埚的SiC储存区域。在生长过程中，通过升华粉末状SiC源材料并将升华的气态成分转移到晶体生长区域，生成SiC生长气相。具有中心中心纵轴的SiC体积单晶通过SiC晶种上的SiC生长气相沉积而生长。在开始生长之前的加热阶段，SiC晶种被基本上加热而基本上没有弯曲，从而在SiC晶种中提供具有基本均匀的晶格面过程的SiC晶体结构。

4. 发明申请

US20110300323A1 PRODUCTION METHOD FOR A BULK SIC SINGLE CRYSTAL WITH A LARGE FACET AND MONOCRYSTALLINE SIC SUBSTRATE WITH HOMOGENEOUS RESISTANCE DISTRIBUTION 有权
标题翻译：具有均匀电阻分布的大面积和单晶SIC基板的块状SIC单晶的生产方法
公开(公告)号：US20110300323A1
公开(公告)日：2011-12-08
申请号：US12852642
申请日：2010-08-09
申请人： THOMAS STRAUBINGER , MICHAEL VOGEL , ANDREAS WOHLFART
发明人： THOMAS STRAUBINGER , MICHAEL VOGEL , ANDREAS WOHLFART
IPC分类号： C30B25/02 , B32B3/02 , C01B31/36
CPC分类号： C30B23/02 , C30B29/36 , Y10T428/21 , Y10T428/31
摘要： A method is used to produce a bulk SiC single crystal. A seed crystal is arranged in a crystal growth region of a growing crucible. An SiC growth gas phase is produced in the crystal growth region. The bulk SiC single crystal having a central longitudinal mid-axis grows by deposition from the SiC growth gas phase, the deposition taking place on a growth interface of the growing bulk SiC single crystal. The SiC growth gas phase is at least partially fed from an SiC source material and contains at least one dopant from the group of nitrogen, aluminum, vanadium and boron. At least in a central main growth region of the growth interface arranged about the longitudinal mid-axis, a lateral temperature gradient of at most 2 K/cm measured perpendicular to the longitudinal mid-axis is adjusted and maintained in this range. The bulk SiC single crystal has a large facet region.
摘要翻译：使用一种制造块状SiC单晶的方法。在生长的坩埚的晶体生长区域中布置晶种。在晶体生长区域中生成SiC生长气相。具有中心纵向中轴的块状SiC单晶通过从SiC生长气相的沉积而生长，沉积发生在生长的本体SiC单晶的生长界面上。 SiC生长气相至少部分地从SiC源材料进料，并且包含来自氮，铝，钒和硼的至少一种掺杂剂。至少在围绕纵向中轴布置的生长界面的中心主生长区域中，垂直于纵向中轴测量的至多2K / cm 2的横向温度梯度被调节并保持在该范围内。体积SiC单晶具有大面积区域。

5. 发明申请

US20120308759A1 LOW-DISLOCATION MONOCRYSTALLINE ALN SUBSTRATE 审中-公开
标题翻译：低分离单晶ALN基板
公开(公告)号：US20120308759A1
公开(公告)日：2012-12-06
申请号：US13563032
申请日：2012-07-31
申请人： RALPH-UWE BARZ , THOMAS STRAUBINGER
发明人： RALPH-UWE BARZ , THOMAS STRAUBINGER
IPC分类号： C01B21/072
CPC分类号： C30B29/403 , C30B23/00 , Y10T428/21 , Y10T428/298
摘要： A bulk AlN single crystal is grown on a monocrystalline AlN seed crystal having a central longitudinal mid-axis and disposed in a crystal growth region of a growing crucible. The bulk AlN single crystal grows parallel to the longitudinal mid-axis by deposition on the AlN seed crystal. The crucible has a lateral crucible inner wall extending in the growth direction. A free space is formed between the AlN crystals and the lateral crucible inner wall. Bulk AlN single crystals and monocrystalline AlN substrates produced therefrom are obtained with only few dislocations, which are substantially distributed homogeneously. Growing crucibles are provided with a crucible lid with a gap formed between an inner growing crucible and the crucible lid through which some of the AlN growth gas phase generated inside the crystal growth region escapes and is deposited on a bottom of an outer growing crucible opposite the lid.
摘要翻译：大块AlN单晶在具有中心纵向中轴的单晶AlN晶种上生长并且设置在生长的坩埚的晶体生长区域中。本体AlN单晶通过沉积在AlN晶种上而与纵向中轴平行生长。该坩埚具有在生长方向上延伸的侧坩埚内壁。在AlN晶体和侧坩埚内壁之间形成自由空间。得到大量的AlN单晶和由其制备的单晶AlN衬底，只有很少的位错，其基本均匀分布。生长坩埚设置有在内部生长的坩埚和坩埚盖之间形成的间隙的坩埚盖，通过该坩埚盖在晶体生长区域内部产生的一些AlN生长气相通过其沉积在与其相对的外部生长的坩埚的底部上盖。

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