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    • 2. 发明申请
    • NON-CONTACT LINEWIDTH MEASUREMENT OF SEMICONDUCTOR CONDUCTORS
    • 半导体导体的非接触线性测量
    • WO1995007469A1
    • 1995-03-16
    • PCT/US1994009322
    • 1994-08-18
    • THE UNITED STATES OF AMERICA, represented by THE SECRETARY, DEPARTMENT OF COMMERCE
    • THE UNITED STATES OF AMERICA, represented by THE SECRETARY, DEPARTMENT OF COMMERCELARRABEE, Robert, D.MARCHIANDO, Jay, F.
    • G01R27/02
    • G01R31/315G01R31/2884H01L22/12
    • A method of measuring the linewidth of an electrical conductor (4) on a semiconductor substrate (1) includes preparing a mutually separated test area (10) and an interconnection area (2) on a surface of the semiconductor substrate; forming the electrical interconnection conductor on the surface of the substrate in the interconnection area with a substantially uniform linewidth and electrically interconnecting elements on the surface; simultaneously with forming the interconnection conductor, forming in the test area a test structure (11) having a plurality of closed loops of the electrical conductor having the same linewidth as the interconnection conductor; measuring the impedance or complex reflection coefficient of the test structure using a head (20) disposed opposite the test area, spaced from the surface, and coupled to the test structure without directly contacting the test structure; and correlating the measured impedance or complex reflection coefficient of the test structure with measurements of geometrically identical structures of conductors having known linewidths to determine the linewidth of the test structure and, thereby, the linewidth of the interconnection conductor.
    • 测量半导体衬底(1)上的电导体(4)的线宽的方法包括在半导体衬底的表面上准备相互分离的测试区域(10)和互连区域(2); 在所述互连区域中的所述基板的表面上形成所述电互连导体,其中所述表面上具有基本均匀的线宽和电互连元件; 同时形成互连导体,在测试区域中形成测试结构(11),该测试结构具有与导体相同的线宽的导电体的多个闭环; 使用与所述测试区域相对设置的与所述表面间隔开的头部(20)来测量所述测试结构的阻抗或复反射系数,并且耦合到所述测试结构而不直接接触所述测试结构; 并将测试结构的测量阻抗或复反射系数与具有已知线宽的导体的几何相同结构的测量值相关联,以确定测试结构的线宽,从而确定互连导体的线宽。