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1. 发明专利

MY175579A GOLD ALLOY BONDING WIRE 未知
公开(公告)号：MY175579A
公开(公告)日：2020-07-01
申请号：MYPI2013002088
申请日：2011-03-01
申请人： TANAKA ELECTRONICS IND
发明人： TAKADA MITSUO , CHIBA JUN , AMADA FUJIO
摘要： An ultra thin gold alloy bonding wire drawn to a diameter of 20 ?m or less is proposed, with which it is possible to conduct several hundreds of thousands of ball bonding stitches continuously. High purity gold of 5N or better is alloyed with one or more of high purity palladium, platinum and copper, each 3N or better, in a total amount of 5 - 2 mass %, and this resulting alloy matrix is doped with calcium, magnesium and lanthanum as minor trace elements each in an amount of 5 - 50 mass ppm, and optionally beryllium in an amount of 1 - 20 mass ppm, and/or at least one of cerium, yttrium and europium in a total amount of 1 - 30 mass ppm are added, or furthermore, the total amount of these minor trace elements is controlled to be 100 mass ppm or smaller, and with the resulting ball bonding wire, it is possible to minimize the surface segregation of the dopant elements in the melt ball surface, and thus it is possible to restrict the rise of the frictional resistance the bonding wire receives as it passes through the capillary which is caused by such segregated substance and it oxide accumulating on the fore end parts of the capillary with the progress of bonding operation. By thus maintaining the surface of the fore end parts of the capillary smooth, such junction defects as the neck damage and insufficient connection are defeated so much so that it is possible to carry out a long period continuous bonding operation.

2. 发明公开

EP2208801A4 BONDING WIRE 有权
标题翻译： ABBINDEDRAHT
公开(公告)号：EP2208801A4
公开(公告)日：2010-10-20
申请号：EP08846565
申请日：2008-09-11
申请人： TANAKA ELECTRONICS IND
发明人： MURAI HIROSHI , CHIBA JUN , AMADA FUJIO
IPC分类号： C22C5/02 , H01L21/60
CPC分类号： C22C5/02 , B23K35/3013 , H01L24/02 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/78 , H01L24/85 , H01L2224/04042 , H01L2224/05624 , H01L2224/43 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45164 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/48624 , H01L2224/48639 , H01L2224/78301 , H01L2224/78303 , H01L2224/78306 , H01L2224/85045 , H01L2224/85181 , H01L2224/85201 , H01L2224/85203 , H01L2224/85205 , H01L2224/85439 , H01L2224/859 , H01L2924/00011 , H01L2924/01005 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01021 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01057 , H01L2924/0106 , H01L2924/0107 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01105 , H01L2924/01204 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/01071 , H01L2924/00014 , H01L2924/01201 , H01L2924/01202 , H01L2924/01203 , H01L2924/00 , H01L2924/00012 , H01L2924/013 , H01L2924/20752 , H01L2924/00013 , H01L2924/01006
摘要： [Issues to be solved] Second bonding failures caused attached oxide of additive elements on high purity Au bonding wire are to be dissolved. [Solution means] Au alloy bonding wires comprising: 5 - 100 wt ppm Mg, 5 - 20 wt ppm In, 5 - 20 wt ppm Al, 5 - 20 wt ppm Yb, and Au residual is more than 99.995 wt % purity, and adding 5 - 20 wt ppm Ca, and for these alloys adding at least more than one element among 5 - 20 wt ppm La, 5 - 20 wt ppm Lu, 5 - 100 wt ppm Sn, 5 - 100 wt ppm Sr to the alloy, and/or, more over, adding 0.01 - 1.2 wt % Pd to these alloys. Bonding wire, which contains these trace additive elements .do not cause of disturbance by accumulated contamination, because of contamination, which formed at ball formation by micro discharge and at the first bonding to attached on tip of capillary, transferring to the wire at second bonding.
摘要翻译： [要解决的问题]第二次键合失败导致高纯度Au键合线上的添加元素的附着氧化物被溶解。 [解决手段] Au合金接合线包括：5-100wt ppm Mg，5-20wt ppm In，5-20wt ppm Al，5-20wt ppm Yb和Au残余物，纯度大于99.995wt％，并且添加5-20wtppm的Ca，并且对于这些合金，在合金中添加5-20wt ppm La，5-20wt ppm Lu，5-100wt ppm Sn，5-100wt ppm Sr中的至少一种以上元素，和/或更重要的是，向这些合金中加入0.01-1.2wt％的Pd。包含这些微量添加元素的键合线不会由于积聚的污染而造成干扰，这是由于在微球形成时在球形成时和在第一次键合时形成的附着在毛细管尖端上的污染物，在第二键合时转移到线上。

3. 发明公开

EP2139032A4 HIGHLY RELIABLE GOLD ALLOY BONDING WIRE AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：非常可靠的金合金引线，连接和半导体器件
公开(公告)号：EP2139032A4
公开(公告)日：2009-12-30
申请号：EP08738890
申请日：2008-03-26
申请人： TANAKA ELECTRONICS IND
发明人： MURAI HIROSHI , CHIBA JUN , AMADA FUJIO
IPC分类号： H01L21/60 , C22C5/02
CPC分类号： C22C5/02 , B23K35/0227 , B23K35/3013 , B23K2201/36 , B23K2203/10 , H01L24/02 , H01L24/45 , H01L2224/05624 , H01L2224/45015 , H01L2224/45144 , H01L2224/48011 , H01L2224/4845 , H01L2224/48624 , H01L2224/85201 , H01L2224/859 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/0102 , H01L2924/01027 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01057 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01105 , H01L2924/01204 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2924/181 , H01L2924/20752 , H01L2924/20755 , H01L2924/20656 , H01L2924/013 , H01L2924/00 , H01L2224/43 , H01L2924/01006
摘要： [Issues to be solved] Providing enhanced bonding reliability of Au alloy bonding wire with low electrical resistivity to Al electrode of semiconductor device, and its application of semiconductor device is bonded with Al electrode pad by the same wire. [Solution means] Au alloy bonding wire comprising: 0.02 - 0.3 mass % Ag, total amount of 10 - 200 mass ppm at least one element of Ge and/or Si, and/or total amount of 10 - 200 mass ppm at least one element of Al and/or Cu, with residual of Au. Moreover, Al and/or Al alloy pad bonded with the above Au alloy bonding wire.

4. 发明专利

SG188385A1 GOLD-PLATINUM-PALLADIUM ALLOY BONDING WIRE 未知
公开(公告)号：SG188385A1
公开(公告)日：2013-07-31
申请号：SG2013015953
申请日：2012-11-21
申请人： TANAKA ELECTRONICS IND
发明人： TESHIMA SATOSHI , CHIBA JUN , CHEN WEI , AMADA FUJIO
摘要： Abstract Gold-Platinum-Palladium Alloy Bonding Wire[Objects]A gold-platinum-palladium alloy bonding wire is proposed for use with semiconductor devices for automotive vehicles, which exhibits excellent connection performance reliability when connected to an aluminum pad such that even in a case wherein an epoxy resin free of halogen elements is used, the durability throughout high temperature exposure and the capability of preserving electric properties despite high temperature exposure are excellent.[Means for Solution]A gold-platinum-palladium alloy bonding wire composed of platinum by 0.4 - 1.2 mass %, palladium by 0.01 - 0.5 mass %, aluminum by 10 - 30 mass ppm, at least one of calcium and magnesium by 10 - 60 mass ppm in sum, and a balance, which is gold of a purity of 99.999 mass % or greater.

5. 发明专利

SG190370A1 GOLD ALLOY BONDING WIRE 未知
公开(公告)号：SG190370A1
公开(公告)日：2013-06-28
申请号：SG2013039466
申请日：2011-03-01
申请人： TANAKA ELECTRONICS IND
发明人： CHIBA JUN , AMADA FUJIO , TAKADA MITSUO
摘要： An ultrafine wire having a diameter of 20 µm or less for ball bonding, with which bonding can be successively conducted hundreds of thousands of times. Ca, Mg, and La are incorporated as minor additive elements in a concentration of 5-50 mass ppm each into an alloy matrix obtained by incorporating one or more of Pd, Pt, and Cu that have a high purity of 3N or above, in a total concentration of 5-2 mass%, into gold that has a high purity of 5N or above. Alternatively, Be is further incorporated in a concentration of 1-20 ppm, and/or one or more of Ce, Y, and Eu are further incorporated in a total concentration of 1-30 mass ppm. Furthermore, the total concentration of these minor additive elements may be regulated to 100 ppm or less. Thus, the additive elements are inhibited from segregating in the surface of the melt ball, and deposits or oxides of the additive elements are inhibited from accumulating on the capillary tip during bonding and thereby increasing the sliding resistance of the wire during loop formation. Since the surface of the capillary tip is kept smooth, bonding failures in the wire bonding, such as neck damage and nonbonding, are inhibited from occurring and long-term continuous bonding is rendered possible.

6. 发明专利

AT552358T 未知
公开(公告)号：AT552358T
公开(公告)日：2012-04-15
申请号：AT08846565
申请日：2008-09-11
申请人： TANAKA ELECTRONICS IND
发明人： MURAI HIROSHI , CHIBA JUN , AMADA FUJIO
IPC分类号： C22C5/02 , B23K35/30 , H01L21/60 , H01L23/00
摘要： [Issues to be solved] Second bonding failures caused attached oxide of additive elements on high purity Au bonding wire are to be dissolved. [Solution means] Au alloy bonding wires comprising: 0.01 - 1.2 wt % Pd, 5 - 100 wt ppm Mg, 5 - 20 wt ppm In, 5 - 20 wt ppm Al, 5 - 20 wt ppm Yb, optionally 5 - 20 wt ppm Ca and/or at least more than one element among 5 - 20 wt ppm La, 5 - 20 wt ppm Lu, 5 - 100 wt ppm Sn, 5 - 100 wt ppm Sr, the rest being Au having a purity greater than 99.99 wt %. Bonding wire, which contains these trace additive elements do not cause of disturbance by accumulated contamination, because of contamination, which formed at ball formation by micro discharge and at the first bonding to attached on tip of capillary, transferring to the wire at second bonding.

7. 发明专利

JP2011142163A GOLD (Au) ALLOY BONDING WIRE 有权
标题翻译：金（Au）合金线
公开(公告)号：JP2011142163A
公开(公告)日：2011-07-21
申请号：JP2010001183
申请日：2010-01-06
申请人： Tanaka Electronics Ind Co Ltd , 田中電子工業株式会社
发明人： CHIBA JUN , AMADA FUJIO , TAKADA MITSUO
IPC分类号： H01L21/60
CPC分类号： H01L2224/05624 , H01L2224/43 , H01L2224/45 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48624 , H01L2224/48724 , H01L2924/00011 , H01L2924/01004 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01057 , H01L2924/01058 , H01L2924/01063 , H01L2924/01064 , H01L2924/01065 , H01L2924/01066 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01105 , H01L2924/01327 , H01L2924/10253 , H01L2924/14 , H01L2924/20751 , H01L2924/01205 , H01L2924/01039 , H01L2924/01203 , H01L2924/00014 , H01L2924/00 , H01L2924/013 , H01L2924/01006 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To achieve successive bonding of hundreds of thousands of times with a super-thin ball bonding wire of ≤20 μm in diameter.
SOLUTION: An alloy matrix containing 5 to 2 mass% of one or more of Pd, Pt and Cu having purities of ≥3N in gold having a purity of ≥5N contains, as fine-amount additive elements, 5 to 5 ppm by mass of Ca, Mg and La respectively or further 1 to 20 ppm of Be and/or 1 to 30 ppm by mass of one or more kinds among Ce, Y and Eu in total, the total amount of the fine-amount additive elements being ≤100 ppm. Consequently, surface segregation of the additive elements on a molten ball surface is suppressed to suppress an increase in slide resistance of a wire during loop formation due to deposition of precipitates and oxides thereof on capillary tips during bonding. Surface properties of those capillary tips are maintained in smooth states to suppress bonding defects such as neck damage and non-sticking in the wire bonding, thereby performing long-period successive bonding.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：通过直径≤20μm的超薄球形接合线实现数十万次的连续接合。解决方案：纯度≥5N的金中含有5〜2质量％的Pd，Pt和Cu中的一种或多种纯度≥3N的合金基质含有5〜5ppm的微量添加元素的Ce，Y和Eu中的一种或多种，分别为Ca，Mg和La，或者还有1〜20ppm的Be和/或1〜30质量ppm的Ce，Y和Eu中的一种以上，微量添加元素的总量 ≤100ppm。因此，抑制了添加元素在熔融球表面上的表面偏析，以抑制由于沉积物及其氧化物在接合期间在毛细管尖端上沉积而导致的环形成期间的线的滑动阻力增加。这些毛细管尖端的表面特性保持平滑状态，以抑制接合缺陷例如引线接合中的颈部损伤和不粘附，从而进行长时间连续接合。版权所有（C）2011，JPO＆INPIT

8. 发明专利

JP2008270371A High-reliability gold-alloy bonding wire and semiconductor device 有权
标题翻译：高可靠性金合金线和半导体器件
公开(公告)号：JP2008270371A
公开(公告)日：2008-11-06
申请号：JP2007108733
申请日：2007-04-17
申请人： Tanaka Electronics Ind Co Ltd , 田中電子工業株式会社
发明人： MURAI HIROSHI , CHIBA ATSUSHI , AMADA FUJIO
IPC分类号： H01L21/60
CPC分类号： C22C5/02 , B23K35/0227 , B23K35/3013 , B23K2201/36 , B23K2203/10 , H01L24/02 , H01L24/45 , H01L2224/05624 , H01L2224/45015 , H01L2224/45144 , H01L2224/48011 , H01L2224/4845 , H01L2224/48624 , H01L2224/85201 , H01L2224/859 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/0102 , H01L2924/01027 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01057 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01105 , H01L2924/01204 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2924/181 , H01L2924/20752 , H01L2924/20755 , H01L2924/20656 , H01L2924/013 , H01L2924/00 , H01L2224/43 , H01L2924/01006
摘要： PROBLEM TO BE SOLVED: To provide an Au-alloy bonding wire improved in junction reliability owing to low electric resistance to an Al electrode for a semiconductor device, and the semiconductor device joined with an Al-electrode pad by the wire. SOLUTION: The gold-alloy bonding wire contains Ag of 0.02 to 0.3 wt.% and at least one kind of Ge or Si of 10 to 200 mass ppm in total and/or at least one kind of Al or Cu of 10 to 200 mass ppm in total and is composed of Au as a remainder. The semiconductor device is connected to an Al or Al-alloy electrode pad by the gold-alloy bonding wire. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种由于对于用于半导体器件的Al电极的低电阻而提高了结合可靠性的Au合金接合线以及通过导线与Al电极焊盘接合的半导体器件。＆lt; P＆gt;解决方案：金合金接合线包含总量为0.02〜0.3重量％的Ag和总共为10〜200质量ppm的至少1种或10种以上的Al或Cu中的至少1种总共为200质量ppm，由余量组成。半导体器件通过金 - 合金接合线连接到Al或Al合金电极焊盘。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2013118259A Gold-platinum-palladium alloy bonding wire 有权
标题翻译：金 - 铂 - 铂金合金线
公开(公告)号：JP2013118259A
公开(公告)日：2013-06-13
申请号：JP2011264547
申请日：2011-12-02
申请人： Tanaka Electronics Ind Co Ltd , 田中電子工業株式会社
发明人： TEJIMA SATOSHI , CHIBA ATSUSHI , CHEN I , AMADA FUJIO
IPC分类号： H01L21/60
CPC分类号： H01L24/45 , C22C5/02 , H01L2224/05624 , H01L2224/45015 , H01L2224/45144 , H01L2224/48624 , H01L2224/85205 , H01L2924/00011 , H01L2924/00014 , H01L2924/01327 , H01L2924/181 , H01L2924/01078 , H01L2924/01046 , H01L2924/01013 , H01L2924/01012 , H01L2924/0102 , H01L2924/01004 , H01L2924/01057 , H01L2924/01058 , H01L2924/01105 , H01L2924/01205 , H01L2924/00 , H01L2924/013 , H01L2224/43 , H01L2924/01006
摘要： PROBLEM TO BE SOLVED: To provide a gold-platinum-palladium alloy-based bonding wire for an in-car-mounting semiconductor, which is excellent in the reliability of connection with an aluminum pad, which achieves high reliability when being left at a high temperature, and which can maintain an electric property after being left at a high temperature even in the case of using an epoxy resin containing no halogen substance.SOLUTION: The gold-platinum-palladium alloy bonding wire comprises: 0.4-1.2 mass% of platinum; 0.01-0.5 mass% of palladium; 10-30 mass ppm of aluminum; 10-60 mass ppm of at least one of calcium and magnesium in total; and the balance including gold with a purity of 99.999 mass% or more.
摘要翻译：要解决的问题：提供一种用于车载半导体的金 - 铂 - 钯 - 合金基接合线，其与铝焊盘的连接可靠性优异，当留下时可实现高可靠性并且即使在使用不含卤素物质的环氧树脂的情况下也能够在高温下保持电性能。金 - 铂 - 钯合金接合线包括：铂金的0.4-1.2质量％ 0.01-0.5质量％的钯; 10-30质量ppm的铝; 总共有10-60质量ppm的钙和镁中的至少一种; 余量包括纯度为99.999质量％以上的金。版权所有（C）2013，JPO＆INPIT

10. 发明专利

JP2011155129A Gold alloy bonding wire for high temperature semiconductor device 审中-公开
标题翻译：用于高温半导体器件的金合金接线
公开(公告)号：JP2011155129A
公开(公告)日：2011-08-11
申请号：JP2010015471
申请日：2010-01-27
申请人： Tanaka Electronics Ind Co Ltd , 田中電子工業株式会社
发明人： CHIBA ATSUSHI , AMADA FUJIO
IPC分类号： H01L21/60
CPC分类号： H01L24/05 , H01L2224/04042 , H01L2224/05624 , H01L2224/45 , H01L2224/45015 , H01L2224/45144 , H01L2224/48 , H01L2224/48245 , H01L2224/48247 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/85 , H01L2224/85203 , H01L2224/85205 , H01L2224/85439 , H01L2224/85444 , H01L2924/00011 , H01L2924/01004 , H01L2924/01005 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/0102 , H01L2924/01021 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01057 , H01L2924/01058 , H01L2924/01063 , H01L2924/01064 , H01L2924/01065 , H01L2924/01066 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01105 , H01L2924/01327 , H01L2924/14 , H01L2924/20751 , H01L2924/20752 , H01L2924/01039 , H01L2924/00 , H01L2924/013 , H01L2924/01006 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To improve the high temperature reliability of the bonding part of a bonding pad and a ball of a gold alloy fine wire in a semiconductor device. SOLUTION: The gold alloy fine wire for electrically connecting an external lead connected to a wiring board where silver (Ag) or gold (Au) or the like is plated and an electrode pad of a semiconductor chip comprising pure aluminum (Al) or an aluminum alloy whose purity is ≥99% comprises 0.5-0.7 mass% of palladium (Pd), 0.1-0.3 mass% of platinum (Pt), and gold (Au) for the remainder. Thus, the generation of microvoids (minute holes) and the growth and enlargement of an aluminum oxide (Al 2 O 3 ) layer are prevented, and the stable bonding strength of a gold bonding wire is obtained for a long period of time on the bonding interface of the pad electrode and the gold alloy ball part even in a high temperature operation environment. Also, the gold alloy fine wire can be adapted to even a high temperature atmosphere (without resin sealing) and the sealing of a halogen-free resin at a high temperature. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提高半导体器件中的接合焊盘的接合部和金合金细线的球的高温可靠性。解决方案：用于电连接连接到银（Ag）或金（Au）等的布线板的外部引线的金合金细线和包含纯铝（Al）的半导体芯片的电极焊盘，或纯度≥99％的铝合金，其余为0.5〜0.7质量％的钯（Pd），0.1〜0.3质量％的铂（Pt）和金（Au）。因此，防止产生微孔（微孔）和氧化铝（Al 2 O 3 ）层的生长和扩大，并且稳定的粘合强度即使在高温运转环境下，也能在焊盘电极和金合金球部的接合界面上长时间地获得金焊丝。此外，金合金细丝甚至可以适应高温环境（无树脂密封）和高温下无卤素树脂的密封。版权所有（C）2011，JPO＆INPIT

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