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1. 发明公开

EP0895282A3 Method of preparing a SOI substrate by using a bonding process, and SOI substrate produced by the same 失效
标题翻译：一种用于通过接合方法以及由此制造的SOI衬底来制造SOI基板的制造方法
公开(公告)号：EP0895282A3
公开(公告)日：2000-01-26
申请号：EP98305994.0
申请日：1998-07-28
申请人： CANON KABUSHIKI KAISHA , TADAHIRO OHMI , Ultraclean Technology Research Institute
发明人： Ohmi, Tadahiro , Ushiki, Takeo , Tanaka, Nobuyoshi , Shinohara, Toshikuni , Nitta, Takahisa
IPC分类号： H01L21/762 , H01L21/20 , H01L23/66 , H01L23/528
CPC分类号： H01L21/76251 , H01L21/2007 , H01L23/4825 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： A semiconductor substrate adapted to giga-scale integration (GSI) comprises a support, at least the surface of which is made of semiconductor, an electroconductive material layer, an insulating layer and a semiconductor layer arranged sequentially in the above order. The electroconductive material layer has at least in part thereof an electroconductive reacted layer obtained by causing two metals, a metal and a semiconductor, a metal and a metal-semiconductor compound, a semiconductor and a metal-semiconductor compound, or two metal-semiconductor compounds to react each other. An electroconductive reaction terminating layer that is made of a material that does not react with the reacted layer is arranged between the reacted layer and the insulating layer or the support.
摘要翻译：一种半导体衬底angepasst到千兆规模集成（GSI）包括支撑，所有其由半导体中的至少表面上，以在绝缘层和在上述顺序依序排列的半导体层的导电材料层。导电性材料层具有至少在其一部分导电反应层通过使两种金属，金属和半导体，金属和金属半导体化合物，半导体和金属半导体化合物，或两个金属半导体化合物获得反应海誓山盟。在导电反应终止层做的材料制成的并不与反应层发生反应时的反应层和绝缘层或支撑之间布置。

2. 发明授权

EP0879902B1 Treating method and apparatus utilizing chemical reaction 失效
标题翻译：治疗方法和装置，利用化学反应
公开(公告)号：EP0879902B1
公开(公告)日：2003-08-13
申请号：EP98303765.6
申请日：1998-05-13
申请人： CANON KABUSHIKI KAISHA , TADAHIRO OHMI , Ultraclean Technology Research Institute
发明人： Ohmi, Tadahiro , Tanaka, Nobuyoshi , Ushiki, Takeo , Shinohara, Toshikuni , Nitta, Takahisa, c/o Ultraclean Techn. Res. Inst.
IPC分类号： C25D11/32 , C25F3/12 , H01L21/306
CPC分类号： H01L21/3063 , C25D11/005 , C25D11/32 , H01L21/76256
摘要： In order to effectively remove gas molecules of a by-product in a chemical reaction in a solution so as to achieve high efficiency, high rate, and uniformity of the chemical reaction in the solution and in order to realize formation of a semiconductor substrate applicable to production of SOI structure and realize formation of a semiconductor substrate in which a light-emitting element or a gas sensor can be formed, on the basis of an inexpensive silicon substrate, the chemical reaction is performed while the concentration of a gas dissolved in a reaction solution in a reaction vessel is always controlled to be not more than the solubility thereof during the reaction. Further, a chemical reaction apparatus is disclosed which comprises a reaction vessel having a holding means for holding a substrate, for housing a reaction solution and carrying out the chemical reaction with the substrate therein, a circulation line for circulating the reaction solution outside the reaction vessel, a deaerating device provided on the circulation line, for removing the gas from the reaction solution, and a transfer device for transferring the reaction solution in the circulation line.

3. 发明公开

EP0879902A3 Treating method and apparatus utilizing chemical reaction 失效
标题翻译： Behandlungsverfahren und Vorrichtung，eine chemische Reaktion verwenden
公开(公告)号：EP0879902A3
公开(公告)日：1999-12-29
申请号：EP98303765.6
申请日：1998-05-13
申请人： CANON KABUSHIKI KAISHA , TADAHIRO OHMI , Ultraclean Technology Research Institute
发明人： Ohmi, Tadahiro , Tanaka, Nobuyoshi , Ushiki, Takeo , Shinohara, Toshikuni , Nitta, Takahisa, c/o Ultraclean Techn. Res. Inst.
IPC分类号： C25D11/32 , C25F3/12 , H01L21/306
CPC分类号： H01L21/3063 , C25D11/005 , C25D11/32 , H01L21/76256
摘要： In order to effectively remove gas molecules of a by-product in a chemical reaction in a solution so as to achieve high efficiency, high rate, and uniformity of the chemical reaction in the solution and in order to realize formation of a semiconductor substrate applicable to production of SOI structure and realize formation of a semiconductor substrate in which a light-emitting element or a gas sensor can be formed, on the basis of an inexpensive silicon substrate, the chemical reaction is performed while the concentration of a gas dissolved in a reaction solution in a reaction vessel is always controlled to be not more than the solubility thereof during the reaction. Further, a chemical reaction apparatus is disclosed which comprises a reaction vessel having a holding means for holding a substrate, for housing a reaction solution and carrying out the chemical reaction with the substrate therein, a circulation line for circulating the reaction solution outside the reaction vessel, a deaerating device provided on the circulation line, for removing the gas from the reaction solution, and a transfer device for transferring the reaction solution in the circulation line.
摘要翻译：为了有效地除去溶液中的化学反应中的副产物的气体分子，以达到溶液中的化学反应的高效率，高速率和均匀性，并且为了实现适用于生成SOI结构，并且在廉价的硅衬底的基础上实现可以形成发光元件或气体传感器的半导体衬底的形成，同时在溶解在反应中的气体的浓度进行化学反应反应容器中的溶液总是控制在不大于其在反应期间的溶解度。此外，公开了一种化学反应装置，其包括具有保持基板的保持装置的反应容器，用于容纳反应溶液并与其中的基板进行化学反应，用于使反应溶液循环到反应容器外部的循环管线设置在循环管线上的脱气装置，用于从反应溶液中除去气体;以及转移装置，用于将反应溶液转移到循环管线中。

4. 发明授权

EP1032098B1 Laser oscillating apparatus 有权
公开(公告)号：EP1032098B1
公开(公告)日：2004-06-09
申请号：EP00301521.1
申请日：2000-02-25
申请人： TADAHIRO OHMI , CANON KABUSHIKI KAISHA
发明人： Ohmi, Tadahiro , Suzuki, Nobumasa, c/o Canon Kabushiki Kaisha , Shinohara, Toshikuni , Ohsawa, Hiroshi, c/o Canon Kabushiki Kaisha , Hirayama, Masaki , Tanaka, Nobuyoshi c/o Canon Kabushiki Kaisha
IPC分类号： H01S3/0973 , H01S3/03 , H01S3/225 , H01L21/027 , G03F7/20
CPC分类号： H01S3/0315 , G03F7/70383 , H01S3/0385 , H01S3/0975 , H01S3/225

5. 发明公开

EP0997225A1 Gas supply path structure, gas supply method, laser oscillating apparatus, exposure apparatus, and device production method 有权
标题翻译： Gaszuführungsstrukturund -verfahren，Laseroszillator，Belichtungsvorrichtung，und Verfahren zur Herstellung einer Einrichtung
公开(公告)号：EP0997225A1
公开(公告)日：2000-05-03
申请号：EP99308543.0
申请日：1999-10-28
申请人： TADAHIRO OHMI , CANON KABUSHIKI KAISHA
发明人： Ohmi, Tadahiro , Osawa, Hiroshi , Ino, Kazuhide , Shirai, Yasuyuki , Tanaka, Nobuyoshi , Shinohara, Toshikuni , Hirayama, Masaki
IPC分类号： B23K26/00 , H01S3/036
CPC分类号： H01S3/036
摘要： A gas supply path structure forms a fluid path for allowing a laser gas to flow into or out of a pair of fluid inlet and outlet 11a and a laser gas is controlled to a predetermined subsonic speed at a throat portion. Gas supplies for controlling the speed of the gas are connected each to the fluid inlet and to the fluid outlet of the gas supply path structure and, together with a cooling device, compose a circulation system for controlling the speed and pressure of the laser gas at the fluid inlet and/or at the fluid outlet.
摘要翻译：气体供给路径结构形成用于允许激光气体流入或流出一对流体入口和出口11a的流体路径，并且在喉部处将激光气体控制到预定的亚音速。用于控制气体速度的气体供应装置连接到流体入口和气体供给路径结构的流体出口，并且与冷却装置一起构成用于控制激光气体的速度和压力的循环系统流体入口和/或流体出口处。

6. 发明授权

EP0997225B1 Gas supply path structure, gas supply method, laser oscillating apparatus, exposure apparatus, and device production method 有权
标题翻译：气体供给路径的结构和方法，所述激光振荡器，曝光装置和方法，用于制造设备
公开(公告)号：EP0997225B1
公开(公告)日：2003-10-01
申请号：EP99308543.0
申请日：1999-10-28
申请人： TADAHIRO OHMI , CANON KABUSHIKI KAISHA
发明人： Ohmi, Tadahiro , Osawa, Hiroshi , Ino, Kazuhide , Shirai, Yasuyuki , Tanaka, Nobuyoshi , Shinohara, Toshikuni , Hirayama, Masaki
IPC分类号： B23K26/00 , H01S3/036
CPC分类号： H01S3/036

7. 发明公开

EP0895282A2 Method of preparing a SOI substrate by using a bonding process, and SOI substrate produced by the same 失效
标题翻译：一种用于通过接合方法以及由此制造的SOI衬底来制造SOI基板的制造方法
公开(公告)号：EP0895282A2
公开(公告)日：1999-02-03
申请号：EP98305994.0
申请日：1998-07-28
申请人： CANON KABUSHIKI KAISHA , TADAHIRO OHMI , Ultraclean Technology Research Institute
发明人： Ohmi, Tadahiro , Ushiki, Takeo , Tanaka, Nobuyoshi , Shinohara, Toshikuni , Nitta, Takahisa
IPC分类号： H01L21/762 , H01L21/20 , H01L23/66 , H01L23/528
CPC分类号： H01L21/76251 , H01L21/2007 , H01L23/4825 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： A semiconductor substrate adapted to giga-scale integration (GSI) comprises a support, at least the surface of which is made of semiconductor, an electroconductive material layer, an insulating layer and a semiconductor layer arranged sequentially in the above order. The electroconductive material layer has at least in part thereof an electroconductive reacted layer obtained by causing two metals, a metal and a semiconductor, a metal and a metal-semiconductor compound, a semiconductor and a metal-semiconductor compound, or two metal-semiconductor compounds to react each other. An electroconductive reaction terminating layer that is made of a material that does not react with the reacted layer is arranged between the reacted layer and the insulating layer or the support.

8. 发明公开

EP0879902A2 Treating method and apparatus utilizing chemical reaction 失效
标题翻译：治疗方法和装置，利用化学反应
公开(公告)号：EP0879902A2
公开(公告)日：1998-11-25
申请号：EP98303765.6
申请日：1998-05-13
申请人： CANON KABUSHIKI KAISHA , TADAHIRO OHMI , Ultraclean Technology Research Institute
发明人： Ohmi, Tadahiro , Tanaka, Nobuyoshi , Ushiki, Takeo , Shinohara, Toshikuni , Nitta, Takahisa, c/o Ultraclean Techn. Res. Inst.
IPC分类号： C25D11/32 , C25F3/12 , H01L21/306
CPC分类号： H01L21/3063 , C25D11/005 , C25D11/32 , H01L21/76256
摘要： In order to effectively remove gas molecules of a by-product in a chemical reaction in a solution so as to achieve high efficiency, high rate, and uniformity of the chemical reaction in the solution and in order to realize formation of a semiconductor substrate applicable to production of SOI structure and realize formation of a semiconductor substrate in which a light-emitting element or a gas sensor can be formed, on the basis of an inexpensive silicon substrate, the chemical reaction is performed while the concentration of a gas dissolved in a reaction solution in a reaction vessel is always controlled to be not more than the solubility thereof during the reaction. Further, a chemical reaction apparatus is disclosed which comprises a reaction vessel having a holding means for holding a substrate, for housing a reaction solution and carrying out the chemical reaction with the substrate therein, a circulation line for circulating the reaction solution outside the reaction vessel, a deaerating device provided on the circulation line, for removing the gas from the reaction solution, and a transfer device for transferring the reaction solution in the circulation line.

9. 发明授权

EP1032097B1 Laser oscillating apparatus 有权
标题翻译：激光振荡装置
公开(公告)号：EP1032097B1
公开(公告)日：2004-09-22
申请号：EP00301496.6
申请日：2000-02-25
申请人： Ohmi, Tadahiro , CANON KABUSHIKI KAISHA
发明人： Ohmi, Tadahiro , Suzuki, Nobumasa , Shinohara, Toshikuni , Ohsawa, Hiroshi , Hirayama, Masaki , Tanaka, Nobuyoshi
IPC分类号： H01S3/0973 , H01S3/225 , H01S3/03 , H01L21/027
CPC分类号： G03F7/70025 , H01S3/0315 , H01S3/0975 , H01S3/225

10. 发明公开

EP1032097A3 Laser oscillating apparatus 有权
公开(公告)号：EP1032097A3
公开(公告)日：2001-09-12
申请号：EP00301496.6
申请日：2000-02-25
申请人： Ohmi, Tadahiro , CANON KABUSHIKI KAISHA
发明人： Ohmi, Tadahiro , Suzuki, Nobumasa , Shinohara, Toshikuni , Ohsawa, Hiroshi , Hirayama, Masaki , Tanaka, Nobuyoshi
IPC分类号： H01S3/0973 , H01S3/225 , H01S3/03 , H01L21/027
CPC分类号： G03F7/70025 , H01S3/0315 , H01S3/0975 , H01S3/225
摘要： In a slot array structure, electromagnetic wave emission which is uniform as a whole over the length of a laser tube is realized to allow uniform laser emission with minimum energy loss. Slots (10) are formed at a predetermined pitch in a long end face (H plane) of each waveguide (1) along a central line (m) in the longitudinal direction of the H plane to be alternately located on the left and right sides of the central line (m) and spaced apart from the central line (m) by a distance (d).

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