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    • 8. 发明申请
    • BIOLOGICAL SAMPLE MEASURING DEVICE AND METHOD FOR MEASURING BIOLOGICAL SAMPLE USING SAME
    • 生物样品测量装置和使用其测量生物样品的方法
    • US20130337571A1
    • 2013-12-19
    • US14003090
    • 2012-05-10
    • Daiki MizuokaHiroyuki TokunagaTsuyoshi Takahashi
    • Daiki MizuokaHiroyuki TokunagaTsuyoshi Takahashi
    • G01N33/66
    • G01N33/66G01N27/3273G01N27/3274Y10T436/144444
    • With this biological sample measuring device, the determination section performs measurement at specific intervals in a first measurement period from the start of measurement until a first time, and performs measurement at specific intervals in a second measurement period that comes after the first measurement period, calculates the difference between the measurement values in corresponding specific periods, and finds a plurality of first difference determination values, on the basis of a plurality of current values measured in the first measurement period and a plurality of current values measured in the second measurement period, finds a second difference determination value by finding the difference at specific intervals in the plurality of first difference determination values, and determines whether or not a reagent movement error and/or exposure error of the biological sample measurement sensor has occurred, on the basis of the first and second difference determination values.
    • 在该生物样本测定装置中,决定部在从开始测量直到第一次的第一测量期间内以特定间隔进行测量,并且在第一测定周期之后的第二测定期间内,以规定间隔进行测定, 基于在第一测量周期中测量的多个电流值和在第二测量周期中测量的多个电流值,在相应的特定周期中的测量值之间的差异,并且找到多个第一差分确定值,找到 第二差分确定值,通过在多个第一差分确定值中以特定间隔找到差异,并且基于第一差异确定值确定生物样本测量传感器的试剂移动误差和/或曝光误差是否已经发生 和第二差分确定值。
    • 10. 发明授权
    • Compound semiconductor device with T-shaped gate electrode
    • 具有T形栅电极的复合半导体器件
    • US08183558B2
    • 2012-05-22
    • US13023146
    • 2011-02-08
    • Kozo MakiyamaTsuyoshi Takahashi
    • Kozo MakiyamaTsuyoshi Takahashi
    • H01L29/06
    • H01L29/7787H01L29/2003H01L29/205H01L29/42316H01L29/66431
    • A compound semiconductor device includes a compound semiconductor substrate; epitaxially grown layers formed over the compound semiconductor substrate and including a channel layer and a resistance lowering cap layer above the channel layer; source and drain electrodes in ohmic contact with the channel layer; recess formed by removing the cap layer between the source and drain electrodes; a first insulating film formed on an upper surface of the cap layer and having side edges at positions retracted from edges, or at same positions as the edges of the cap layer in a direction of departing from the recess; a second insulating film having gate electrode opening and formed covering a semiconductor surface in the recess and the first insulating film; and a gate electrode formed on the recess via the gate electrode opening.
    • 化合物半导体器件包括化合物半导体衬底; 在化合物半导体衬底上形成的外延生长层,并且在沟道层上方包括沟道层和电阻降低覆盖层; 源极和漏极与沟道层欧姆接触; 通过去除源极和漏极之间的覆盖层形成的凹陷; 第一绝缘膜,其形成在所述盖层的上表面上,并且在从所述盖层的边缘离开所述凹部的边缘处或与所述盖层的边缘相同的位置处具有侧边缘; 第二绝缘膜,具有栅极电极开口并形成为覆盖所述凹部中的半导体表面和所述第一绝缘膜; 以及通过栅电极开口形成在凹部上的栅电极。