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1. 发明授权

US08241426B2 CMP polishing method, CMP polishing apparatus, and process for producing semiconductor device 有权
标题翻译： CMP抛光方法，CMP抛光装置以及半导体装置的制造方法
公开(公告)号：US08241426B2
公开(公告)日：2012-08-14
申请号：US11795697
申请日：2005-12-21
申请人： Syozo Takada , Hisanori Matsuo , Akira Ishikawa
发明人： Syozo Takada , Hisanori Matsuo , Akira Ishikawa
IPC分类号： B08B3/12 , B08B6/00 , B08B7/00 , B08B7/02
CPC分类号： H01L21/02074 , C11D7/5013 , C11D7/5022 , C11D11/0047 , H01L21/76826 , H01L21/76828
摘要： When the remaining slurry and polishing residue are removed by cleaning with a cleaning liquid (preferably a cleaning liquid containing a surfactant), organic matter in the cleaning liquid containing a surfactant seeps into the interlayer insulating film 3. Therefore, the substrate is subsequently washed with an organic solvent or a solution containing an organic solvent, thus washing away the organic matter that has seeped into the interlayer insulating film 3. Although the interlayer insulating film 3 is subjected to a hydrophobic treatment, since the solvent used is an organic solvent, this solvent is able to seep into the interlayer insulating film 3, dissolve the organic matter, and wash the organic matter away without being affected by this hydrophobic treatment. Afterward, the substrate 1 is dried, and the organic solvent or solution containing an organic solvent that is adhering to the surface is removed.
摘要翻译：当通过用清洗液（优选含有表面活性剂的清洗液）清洗剩余的浆料和抛光残渣时，含有表面活性剂的清洗液中的有机物渗入层间绝缘膜3.因此，随后用有机溶剂或含有有机溶剂的溶液，从而洗去已经渗透到层间绝缘膜3中的有机物质。尽管对层间绝缘膜3进行疏水处理，但由于使用的溶剂是有机溶剂，因此溶剂能够渗透到层间绝缘膜3中，溶解有机物质，并且在不受这种疏水处理的影响的情况下洗涤有机物质。之后，干燥基板1，除去附着在表面上的有机溶剂的有机溶剂或溶液。

2. 发明申请

US20090047785A1 CMP Polishing Method, CMP Polishing Apparatus, and Process for Producing Semiconductor Device 有权
标题翻译： CMP抛光方法，CMP抛光装置和用于制造半导体器件的方法
公开(公告)号：US20090047785A1
公开(公告)日：2009-02-19
申请号：US11795697
申请日：2005-12-21
申请人： Syozo Takada , Hisanori Matsuo , Akira Ishikawa
发明人： Syozo Takada , Hisanori Matsuo , Akira Ishikawa
IPC分类号： H01L21/306 , B24B7/00
CPC分类号： H01L21/02074 , C11D7/5013 , C11D7/5022 , C11D11/0047 , H01L21/76826 , H01L21/76828
摘要： When the remaining slurry and polishing residue are removed by cleaning with a cleaning liquid (preferably a cleaning liquid containing a surfactant), organic matter in the cleaning liquid containing a surfactant seeps into the interlayer insulating film 3. Therefore, the substrate is subsequently washed with an organic solvent or a solution containing an organic solvent, thus washing away the organic matter that has seeped into the interlayer insulating film 3. Although the interlayer insulating film 3 is subjected to a hydrophobic treatment, since the solvent used is an organic solvent, this solvent is able to seep into the interlayer insulating film 3, dissolve the organic matter, and wash the organic matter away without being affected by this hydrophobic treatment. Afterward, the substrate 1 is dried, and the organic solvent or solution containing an organic solvent that is adhering to the surface is removed.
摘要翻译：当通过用清洗液（优选含有表面活性剂的清洗液）清洗剩余的浆料和抛光残渣时，含有表面活性剂的清洗液中的有机物渗入层间绝缘膜3.因此，随后用有机溶剂或含有有机溶剂的溶液，从而洗去已经渗透到层间绝缘膜3中的有机物质。尽管对层间绝缘膜3进行疏水处理，但由于使用的溶剂是有机溶剂，因此溶剂能够渗透到层间绝缘膜3中，溶解有机物质，并且在不受这种疏水处理的影响的情况下洗涤有机物质。之后，干燥基板1，除去附着在表面上的有机溶剂的有机溶剂或溶液。

3. 发明申请

US20120315831A1 CMP Polishing Method, CMP Polishing Apparatus, and Process for Producing Semiconductor Device 审中-公开
标题翻译： CMP抛光方法，CMP抛光装置和用于制造半导体器件的方法
公开(公告)号：US20120315831A1
公开(公告)日：2012-12-13
申请号：US13545359
申请日：2012-07-10
申请人： Syozo Takada , Hisanori Matsuo , Akira Ishikawa
发明人： Syozo Takada , Hisanori Matsuo , Akira Ishikawa
IPC分类号： B24B37/34
CPC分类号： H01L21/02074 , C11D7/5013 , C11D7/5022 , C11D11/0047 , H01L21/76826 , H01L21/76828
摘要： When the remaining slurry and polishing residue are removed by cleaning with a cleaning liquid (preferably a cleaning liquid containing a surfactant), organic matter in the cleaning liquid containing a surfactant seeps into the interlayer insulating film 3. Therefore, the substrate is subsequently washed with an organic solvent or a solution containing an organic solvent, thus washing away the organic matter that has seeped into the interlayer insulating film 3. Although the interlayer insulating film 3 is subjected to a hydrophobic treatment, since the solvent used is an organic solvent, this solvent is able to seep into the interlayer insulating film 3, dissolve the organic matter, and wash the organic matter away without being affected by this hydrophobic treatment. Afterward, the substrate 1 is dried, and the organic solvent or solution containing an organic solvent that is adhering to the surface is removed.
摘要翻译：当通过用清洗液（优选含有表面活性剂的清洗液）清洗剩余的浆料和抛光残渣时，含有表面活性剂的清洗液中的有机物渗入层间绝缘膜3.因此，随后用有机溶剂或含有有机溶剂的溶液，从而洗去已经渗透到层间绝缘膜3中的有机物质。尽管对层间绝缘膜3进行疏水处理，但由于使用的溶剂是有机溶剂，因此溶剂能够渗透到层间绝缘膜3中，溶解有机物质，并且在不受这种疏水处理的影响的情况下洗涤有机物质。之后，干燥基板1，除去附着在表面上的有机溶剂的有机溶剂或溶液。

4. 发明申请

US20050112998A1 Polishing apparatus 审中-公开
标题翻译：抛光设备
公开(公告)号：US20050112998A1
公开(公告)日：2005-05-26
申请号：US10974736
申请日：2004-10-28
申请人： Hisanori Matsuo , Akira Ishikawa
发明人： Hisanori Matsuo , Akira Ishikawa
IPC分类号： B24B49/10 , B24B37/07 , B24B49/12 , B24B49/16 , H01L21/304 , B24B49/00
CPC分类号： B24B37/013 , B24B49/12
摘要： A polishing apparatus is used for polishing a substrate such as a semiconductor wafer to a flat finish. The polishing apparatus includes a polishing tool having a polishing surface, a substrate holder configured to hold a substrate, a monitoring device configured to monitor a polishing state of the surface of the substrate being polished, and a controlling device configured to change a polishing condition on the basis of the polishing state of the surface of the substrate being polished detected by the monitoring device.
摘要翻译：抛光装置用于将诸如半导体晶片的基板抛光至平整。抛光装置包括具有抛光面的研磨工具，构造成保持基板的基板保持器，被配置为监视被抛光的基板的表面的抛光状态的监视装置，以及配置为将抛光条件改变的控制装置由被监测装置检测到的被抛光的基板的表面的抛光状态的基础。

5. 发明授权

US08398193B2 Inkjet recording apparatus 有权
标题翻译：喷墨记录装置
公开(公告)号：US08398193B2
公开(公告)日：2013-03-19
申请号：US13135750
申请日：2011-07-14
申请人： Hideo Izawa , Akira Ishikawa , Kouichi Ooyama
发明人： Hideo Izawa , Akira Ishikawa , Kouichi Ooyama
IPC分类号： B41J25/308
CPC分类号： B41J25/3088 , B41J25/308
摘要： [Problem to be Solved] To provide an inkjet recording apparatus capable of adjusting a gap with high accuracy and easily.[Solution] The present invention provides an inkjet recording apparatus 100 including line heads 20 to 23 capable of recording on a recording medium 1, a head box 11 that houses the line heads 20 to 23, and gap adjustment cams 30 to 32 that abut on a lower surface of a bottom 11b in the head box 11, in which the head box 11 is slightly movable in an up-and-down direction by rotating the gap adjustment cams 30 to 32.
摘要翻译： [待解决的问题]提供能够高精度且容易地调整间隙的喷墨记录装置。 [解决方案]本发明提供一种喷墨记录装置100，其包括能够在记录介质1上记录的行头20至23，容纳行头20至23的头盒11和邻接的行间距调节凸轮30至32 头箱11中的底部11b的下表面，其中通过旋转间隙调节凸轮30至32，头箱11可在上下方向上稍微移动。

6. 发明授权

US08371689B2 Ink-jet recording apparatus 有权
标题翻译：喷墨记录装置
公开(公告)号：US08371689B2
公开(公告)日：2013-02-12
申请号：US12927485
申请日：2010-11-16
申请人： Hideo Izawa , Akira Ishikawa
发明人： Hideo Izawa , Akira Ishikawa
IPC分类号： B41J2/01
CPC分类号： B41J3/60 , B41J11/002 , B41J15/04 , B41J29/13
摘要： The present invention is an ink-jet recording apparatus 100 capable of carrying out printing continuously onto both surfaces of a recording medium 1, the ink-jet recording apparatus 100 having: a first unit 10a having a first ink-jet recording head 2a for carrying out printing onto a first surface la of the recording medium 1 and having a first drying drum 3apositioned below the first ink-jet recording head 2a and heating and drying the recording medium 1 after the printing; and a second unit 10b having a second ink-jet recording head 2b for carrying out printing onto a second surface 1b of the recording medium 1 and having a second drying drum 3b positioned below the second ink-jet recording head 2b and heating and drying the recording medium 1 after the printing.
摘要翻译：本发明是一种喷墨记录装置100，其能够连续地在记录介质1的两个表面上进行打印，喷墨记录装置100具有：第一单元10a，具有用于承载的第一喷墨记录头2a 将其印刷到记录介质1的第一表面1a上，并具有位于第一喷墨记录头2a下方的第一干燥鼓3，并在印刷之后加热和干燥记录介质1; 以及具有第二喷墨记录头2b的第二单元10b，用于在记录介质1的第二表面1b上进行印刷，并具有位于第二喷墨记录头2b下方的第二干燥鼓3b，并加热并干燥记录介质1。

7. 发明授权

US08368071B2 Semiconductor device including a thin film transistor and capacitor 有权
标题翻译：半导体器件包括薄膜晶体管和电容器
公开(公告)号：US08368071B2
公开(公告)日：2013-02-05
申请号：US11716068
申请日：2007-03-09
申请人： Akira Ishikawa
发明人： Akira Ishikawa
IPC分类号： H01L29/04
CPC分类号： H01L29/786 , G02F1/136213 , H01L27/124 , H01L27/1248 , H01L27/1255 , H01L29/4908 , H01L29/78648 , Y10S257/903 , Y10S257/906 , Y10S257/908 , Y10S257/924
摘要： A semiconductor device and a method for preparing the same that can solve crack of a semiconductor film, capacitance electrodes and the like due to stress when forming a source electrode and a drain electrode in a semiconductor device having a thin film transistor and a holding capacitance with three or more capacitance electrodes is provided. Before forming the source electrode and the drain electrode, a crystalline silicon film for relaxing the stress is formed, then a contact hole connecting to the semiconductor film of the thin film transistor is opened, and a metal film to be the source electrode and the drain electrode is formed.
摘要翻译：在具有薄膜晶体管和保持电容的半导体器件中形成源电极和漏电极时由于应力引起的半导体膜，电容电极等的裂纹的半导体器件及其制造方法提供三个或更多个电容电极。在形成源电极和漏电极之前，形成用于缓和应力的晶体硅膜，然后打开与薄膜晶体管的半导体膜连接的接触孔，并将作为源电极和漏极的金属膜形成电极。

8. 发明授权

US08198680B2 Semiconductor element, semiconductor device and methods for manufacturing thereof 有权
标题翻译：半导体元件，半导体器件及其制造方法
公开(公告)号：US08198680B2
公开(公告)日：2012-06-12
申请号：US11822775
申请日：2007-07-10
申请人： Akira Ishikawa
发明人： Akira Ishikawa
IPC分类号： H01L27/12
CPC分类号： H01L29/41733 , H01L21/84 , H01L27/1203 , H01L29/66757 , H01L29/78621 , H01L29/78675
摘要： The present invention provides a method of manufacturing a semiconductor element having a miniaturized structure and a semiconductor device in which the semiconductor element having a miniaturized structure is integrated highly, by overcoming reduction of the yield caused by alignment accuracy, accuracy of a processing technique by reduced projection exposure, a finished dimension of a resist mask, an etching technique and the like. An insulating film covering a gate electrode is formed, and a source region and a drain region are exposed, a conductive film is formed thereover, a resist having a different film thickness is formed by applying the resist over the conductive film, the entire surface of the resist is exposed to light and developed, or the entire surface of the resist is etched to form a resist mask, and the conductive film is etched by using the resist mask to form a source and drain electrode.
摘要翻译：本发明提供一种制造具有小型结构的半导体元件和半导体器件的方法，其中具有小型结构的半导体元件被高度集成，通过克服由对准精度引起的成品率的降低，加工技术的精度降低投影曝光，抗蚀剂掩模的成品尺寸，蚀刻技术等。形成覆盖栅电极的绝缘膜，并且源极区域和漏极区域露出，在其上形成导电膜，通过在导电膜上涂覆抗蚀剂，形成具有不同膜厚度的抗蚀剂，整个表面将抗蚀剂曝光并显影，或者蚀刻抗蚀剂的整个表面以形成抗蚀剂掩模，并且通过使用抗蚀剂掩模来蚀刻导电膜以形成源极和漏极。

9. 发明授权

US08177327B2 Ink jet recording apparatus 有权
标题翻译：喷墨记录装置
公开(公告)号：US08177327B2
公开(公告)日：2012-05-15
申请号：US12648051
申请日：2009-12-28
申请人： Hideo Izawa , Takao Namiki , Akira Ishikawa , Yuuichi Yamazaki
发明人： Hideo Izawa , Takao Namiki , Akira Ishikawa , Yuuichi Yamazaki
IPC分类号： B41J23/00
CPC分类号： B41J2/155 , B41J2202/19 , B41J2202/20
摘要： An ink jet recording apparatus in which a head supporting plate having a line head mounted thereon which comprises a plurality of short heads staggered is attached to a carriage whereby recording is performed by ink jet printing with the line head on a recording medium positioned beneath the carriage is rendered capable of using ordinary short heads.To this end, in an ink jet recording apparatus in which a head supporting plate 12 having a line head mounted thereon which comprises a plurality of short heads 11 staggered is attached to a carriage 9 whereby recording is performed by ink jet printing with the line head on a recording medium 2 positioned beneath the carriage, a portion of projection 25 is provided which is formed on a surface of attachment where the head supporting plate is attached to the carriage, the portion of projection entering into a hole 26 formed in the carriage; and a portion of recess is provided which is formed on an obverse side of the head supporting plate and at a position corresponding to that of the portion of projection and whose inner bottom surface becomes a head mounting surface 27 on which a said short head having a nozzle is to be mounted, the head mounting surface being formed with a nozzle accepting hole adapted to accept the nozzle of the short head for mounting the short head on the head mounting surface.
摘要翻译：一种喷墨记录装置，其中安装有其上包括多个短头的行头的头支撑板被安装在滑架上，由此通过喷墨打印进行记录，该记录介质位于载架能够使用普通的短头。为此，在其上安装有包括多个短头11的行头的头支撑板12安装在滑架9上的喷墨记录装置中，由此通过喷墨打印与线头进行记录在位于托架下方的记录介质2上，设有突出部25的一部分，该突起25形成在安装在支承板上的安装面上，突出部分进入形成于托架中的孔26中。并且设置一部分凹部，其形成在头部支撑板的正面上并且在与突出部分相对应的位置处，并且其内底表面变成头部安装表面27，在该头部安装表面上，具有要安装喷嘴，头安装表面形成有适于接纳短头喷嘴的喷嘴接收孔，用于将短头安装在头安装表面上。

10. 发明授权

US08087358B2 Textile printing method and apparatus 有权
标题翻译：纺织印花方法及装置
公开(公告)号：US08087358B2
公开(公告)日：2012-01-03
申请号：US12571683
申请日：2009-10-01
申请人： Hideo Izawa , Takao Namiki , Akira Ishikawa , Yuuichi Yamazaki
发明人： Hideo Izawa , Takao Namiki , Akira Ishikawa , Yuuichi Yamazaki
IPC分类号： B41F17/00
CPC分类号： B41J3/4078 , B41J11/007 , D06P5/30
摘要： To enable fabric of any length to be continuously printed without causing a textile printing unit to cease its operation, a textile printing method is provided in which fabric is conveyed by a conveyer belt and passed through a printing section to print on the fabric, the printing section having a textile printing ink jet printer disposed opposite the conveyer belt, wherein the printing section is continuously supplied with the fabric comprising a plurality of successive sheets of fabric, each sheet having a given length, such a sheet of fabric for supply into the printing section having a terminal end tied with a starting end of a sheet of a fabric for continuous succeeding supply in the state that the terminal and starting ends are in contact with each other.
摘要翻译：为了使任何长度的织物能够连续打印而不会导致纺织品印刷单元停止其操作，提供了一种织物印刷方法，其中织物由输送带输送并通过印刷部分以在织物上印刷，印刷该部分具有布置在输送带对面的织物印刷喷墨打印机，其中印刷部分连续地供应织物，该织物包括多个连续的织物片，每个片材具有给定的长度，这样的织物片供应到印刷该端部具有与织物片材的起始端连接的终端，用于在端子和起始端彼此接触的状态下连续地继续供电。

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