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1. 发明授权

US07450416B1 Utilization of memory-diode which may have each of a plurality of different memory states 有权
标题翻译：利用可能具有多个不同存储器状态中的每一个的存储器二极管
公开(公告)号：US07450416B1
公开(公告)日：2008-11-11
申请号：US11021944
申请日：2004-12-23
申请人： Swaroop Kaza , Juri Krieger , David Gaun , Stuart Spitzer , Richard Kingsborough , Zhida Lan , Colin S. Bill , Wei Daisy Cai , Igor Sokolik
发明人： Swaroop Kaza , Juri Krieger , David Gaun , Stuart Spitzer , Richard Kingsborough , Zhida Lan , Colin S. Bill , Wei Daisy Cai , Igor Sokolik
IPC分类号： G11C11/34
CPC分类号： G11C11/36 , G11C11/56 , G11C13/02 , G11C2213/56 , G11C2213/72
摘要： The present invention is a method of undertaking a procedure on a memory-diode, wherein a memory-diode is provided which is programmable so as to have each of a plurality of different threshold voltages. A reading of the state of the memory-diode indicates the so determined threshold voltage of the memory-diode.
摘要翻译：本发明是一种在存储器二极管上进行程序的方法，其中提供可编程以便具有多个不同阈值电压中的每一个的存储器二极管。存储二极管的状态的读取指示存储二极管的阈值电压是如此确定的。

2. 发明申请

US20070007585A1 Memory device with improved data retention 审中-公开
标题翻译：具有改善数据保留性能的内存设备
公开(公告)号：US20070007585A1
公开(公告)日：2007-01-11
申请号：US11174861
申请日：2005-07-05
申请人： Igor Sokolik , Richard Kingsborough , David Gaun , Swaroop Kaza , Stuart Spitzer , Suzette Pangrle
发明人： Igor Sokolik , Richard Kingsborough , David Gaun , Swaroop Kaza , Stuart Spitzer , Suzette Pangrle
IPC分类号： H01L29/792
CPC分类号： G11C13/0016 , B82Y10/00 , G11C13/0014 , G11C2213/11 , G11C2213/56
摘要： The present memory device includes first and second electrodes, a passive layer between the first and second electrodes and an active layer between the first and second electrodes, the active layer being of a material containing randomly oriented pores which are interconnected to form passages through the active layer.
摘要翻译：本存储器件包括第一和第二电极，第一和第二电极之间的无源层和第一和第二电极之间的有源层，活性层是含有随机取向的孔的材料，其互连以形成通过活性物质的通道层。

3. 发明授权

US07378682B2 Memory element using active layer of blended materials 有权
标题翻译：记忆元素使用有源层的混合材料
公开(公告)号：US07378682B2
公开(公告)日：2008-05-27
申请号：US11052688
申请日：2005-02-07
申请人： David Gaun , Swaroop Kaza , Stuart Spitzer , Juri Krieger , Richard Kingsborough
发明人： David Gaun , Swaroop Kaza , Stuart Spitzer , Juri Krieger , Richard Kingsborough
IPC分类号： H01L51/00
CPC分类号： H01L27/285 , B82Y10/00 , G11C13/0014 , G11C13/0016
摘要： The present memory device has first and second electrodes, a passive layer between the first and second electrodes and on and in contact with the first electrode, and an active layer between the first and second electrodes and on and in contact with the passive layer and second electrode, for receiving a charged specie from the passive layer. The active layer is a mixture of (i) a first polymer, and (ii) a second polymer for enhancing ion transport, improving the interface and promoting a rapid and substantially uniform distribution of the charged specie in the active layer, i.e., preventing a localized injection of the charged species. These features result in a memory element with improved stability, a more controllable ON-state resistance, improved switching speed and a lower programming voltage.
摘要翻译：本存储器件具有第一和第二电极，在第一和第二电极之间并且与第一电极接触并且与第一电极接触的无源层以及在第一和第二电极之间并且与被动层和第二电极接触的有源层电极，用于从被动层接收带电物质。活性层是（i）第一聚合物和（ii）用于增强离子迁移的第二聚合物的混合物，改善界面并促进活性层中带电物质的快速且基本上均匀的分布，即防止局部注射带电物种。这些特征导致存储元件具有改进的稳定性，更可控的导通电阻，改进的开关速度和较低的编程电压。

4. 发明申请

US20060175646A1 Memory element using active layer of blended materials 有权
标题翻译：记忆元素使用有源层的混合材料
公开(公告)号：US20060175646A1
公开(公告)日：2006-08-10
申请号：US11052688
申请日：2005-02-07
申请人： David Gaun , Swaroop Kaza , Stuart Spitzer , Juri Krieger , Richard Kingsborough
发明人： David Gaun , Swaroop Kaza , Stuart Spitzer , Juri Krieger , Richard Kingsborough
IPC分类号： H01L29/94
CPC分类号： H01L27/285 , B82Y10/00 , G11C13/0014 , G11C13/0016
摘要： The present memory device has first and second electrodes, a passive layer between the first and second electrodes and on and in contact with the first electrode, and an active layer between the first and second electrodes and on and in contact with the passive layer and second electrode, for receiving a charged specie from the passive layer. The active layer is a mixture of (i) a first polymer, and (ii) a second polymer for enhancing ion transport, improving the interface and promoting a rapid and substantially uniform distribution of the charged specie in the active layer, i.e., preventing a localized injection of the charged species. These features result in a memory element with improved stability, a more controllable ON-state resistance, improved switching speed and a lower programming voltage.
摘要翻译：本存储器件具有第一和第二电极，在第一和第二电极之间并且与第一电极接触并且与第一电极接触的无源层以及在第一和第二电极之间并且与被动层和第二电极接触的有源层电极，用于从被动层接收带电物质。活性层是（i）第一聚合物和（ii）用于增强离子迁移的第二聚合物的混合物，改善界面并促进活性层中带电物质的快速且基本上均匀的分布，即防止局部注射带电物种。这些特征导致存储元件具有改进的稳定性，更可控的导通电阻，改进的开关速度和较低的编程电压。

5. 发明授权

US07102156B1 Memory elements using organic active layer 有权
标题翻译：记忆元素使用有机活性层
公开(公告)号：US07102156B1
公开(公告)日：2006-09-05
申请号：US11021681
申请日：2004-12-23
申请人： Richard Kingsborough , Igor Sokolik , David Gaun , Swaroop Kaza , Suzette Pangrle , Alexander Nickel , Stuart Spitzer
发明人： Richard Kingsborough , Igor Sokolik , David Gaun , Swaroop Kaza , Suzette Pangrle , Alexander Nickel , Stuart Spitzer
IPC分类号： H01L35/24 , H01L51/00
CPC分类号： G11C13/0014 , B82Y10/00 , G11C13/0016 , H01L27/285 , H01L51/0036 , H01L51/0039 , H01L51/0043
摘要： A memory element includes a first electrode, a passive layer on and in contact with the first electrode, a polyfluorene active layer on and in contact with the active layer, and a second electrode on and in contact with the polyfluorene active layer. The chemical structure of the polyfluorene active layer may be altered to take different forms, each providing a different memory element operating characteristic.
摘要翻译：存储元件包括第一电极，与第一电极接触并与第一电极接触的钝化层，与活性层接触并与活性层接触的聚芴有源层，以及与聚芴活性层接触并与其接触的第二电极。可以改变聚芴有源层的化学结构以采取不同的形式，每种形式提供不同的存储元件操作特性。

6. 发明授权

US07208757B1 Memory element with nitrogen-containing active layer 有权
标题翻译：记忆元素含氮活性层
公开(公告)号：US07208757B1
公开(公告)日：2007-04-24
申请号：US11021959
申请日：2004-12-23
申请人： Richard Kingsborough , Xiaobo Shi , Igor Sokolik , David Gaun , Swaroop Kaza
发明人： Richard Kingsborough , Xiaobo Shi , Igor Sokolik , David Gaun , Swaroop Kaza
IPC分类号： H01L51/30
CPC分类号： H01L51/0043 , B82Y10/00 , G11C13/0009 , G11C13/0014 , G11C13/0016 , G11C2213/34 , H01L51/0039 , H01L51/0077
摘要： The present memory structure includes first and second electrodes, a passive layer, and an active layer containing nitrogen, the passive and active layers being between the first and second electrodes. Metal ions in the active layer bind to the nitrogen thereof, enhancing retention of the metal ions in the active layer for improved, stable data retention.
摘要翻译：本存储器结构包括第一和第二电极，无源层和含氮的有源层，无源层和有源层位于第一和第二电极之间。活性层中的金属离子与其氮结合，增强金属离子在活性层中的保留，从而改善，稳定的数据保留。

7. 发明授权

US07449742B2 Memory device with active layer of dendrimeric material 有权
标题翻译：具有树枝状物质活性层的记忆装置
公开(公告)号：US07449742B2
公开(公告)日：2008-11-11
申请号：US11642477
申请日：2006-12-20
申请人： Igor Sokolik , Juri Krieger , Xiaobo Shi , Richard Kingsborough , William Leonard
发明人： Igor Sokolik , Juri Krieger , Xiaobo Shi , Richard Kingsborough , William Leonard
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119 , H01L29/788 , H01L29/792
CPC分类号： H01L51/0095 , B82Y10/00 , G11C13/0014 , G11C2213/56 , H01L51/0591 , Y10S257/906 , Y10S257/907 , Y10S257/908 , Y10T428/31504 , Y10T428/31855
摘要： The present memory device includes first and second electrodes, a passive layer between the first and second electrodes; and an active layer between the first and second electrodes, the active layer being of dendrimeric material which provides passages through the active layer.
摘要翻译：本存储器件包括第一和第二电极，位于第一和第二电极之间的无源层; 以及在所述第一和第二电极之间的有源层，所述活性层是提供通过所述有源层的通道的树枝状大分子材料。

8. 发明申请

US20080152934A1 Memory device with improved data retention 有权
标题翻译：具有改善数据保留性能的内存设备
公开(公告)号：US20080152934A1
公开(公告)日：2008-06-26
申请号：US11642477
申请日：2006-12-20
申请人： Igor Sokolik , Juri Krieger , Xiaobo Shi , Richard Kingsborough , William Leonard
发明人： Igor Sokolik , Juri Krieger , Xiaobo Shi , Richard Kingsborough , William Leonard
IPC分类号： B32B9/00 , B32B27/00
CPC分类号： H01L51/0095 , B82Y10/00 , G11C13/0014 , G11C2213/56 , H01L51/0591 , Y10S257/906 , Y10S257/907 , Y10S257/908 , Y10T428/31504 , Y10T428/31855
摘要： The present memory device includes first and second electrodes, a passive layer between the first and second electrodes; and an active layer between the first and second electrodes, the active layer being of dendrimeric material which provides passages through the active layer.
摘要翻译：本存储器件包括第一和第二电极，位于第一和第二电极之间的无源层; 以及在所述第一和第二电极之间的有源层，所述活性层是提供通过所述有源层的通道的树枝状大分子材料。

9. 发明申请

US20070090343A1 System and method for processing an organic memory cell 有权
标题翻译：用于处理有机存储单元的系统和方法
公开(公告)号：US20070090343A1
公开(公告)日：2007-04-26
申请号：US11256558
申请日：2005-10-21
申请人： Nicolay Yudanov , Igor Sokolik , Richard Kingsborough , William Leonard , Suzette Pangrle , Nicholas Tripsas , Minh Ngo
发明人： Nicolay Yudanov , Igor Sokolik , Richard Kingsborough , William Leonard , Suzette Pangrle , Nicholas Tripsas , Minh Ngo
IPC分类号： H01L29/08
CPC分类号： H01L51/001 , C23C16/54 , H01J2237/3321 , H01L27/285
摘要： A system and method are disclosed for processing an organic memory cell. An exemplary system can employ an enclosed processing chamber, a passive layer formation component operative to form a passive layer on a first electrode, and an organic semiconductor layer formation component operative to form an organic semiconductor layer on the passive layer. A wafer substrate is not needed to transfer from a passive layer formation system to an organic semiconductor layer formation system. The passive layer is not exposed to air after formation of the passive layer and before formation of the organic semiconductor layer. As a result, conductive impurities caused by the exposure to air do not occur in the thin film layer, thus improving productivity, quality, and reliability of organic memory devices. The system can further employ a second electrode formation component operative to form a second electrode on the organic semiconductor layer.
摘要翻译：公开了一种用于处理有机存储单元的系统和方法。示例性系统可以采用封闭的处理室，可操作以在第一电极上形成钝化层的无源层形成部件和可操作地在被动层上形成有机半导体层的有机半导体层形成部件。晶片衬底不需要从钝化层形成系统转移到有机半导体层形成系统。钝化层在形成无源层之后并且在形成有机半导体层之前不暴露于空气。结果，在薄膜层中不会发生由暴露于空气引起的导电杂质，从而提高了有机存储器件的生产率，质量和可靠性。该系统可以进一步采用可在有机半导体层上形成第二电极的第二电极形成部件。

10. 发明申请

US20070058426A1 Semiconductor memory device comprising one or more injecting bilayer electrodes 有权
标题翻译：包括一个或多个注入双层电极的半导体存储器件
公开(公告)号：US20070058426A1
公开(公告)日：2007-03-15
申请号：US11227603
申请日：2005-09-15
申请人： Igor Sokolik , Richard Kingsborough , Aaron Mandell
发明人： Igor Sokolik , Richard Kingsborough , Aaron Mandell
IPC分类号： G11C11/34
CPC分类号： G11C13/0014 , B82Y10/00 , G11C13/0016 , G11C2213/55 , G11C2213/56 , G11C2213/71 , G11C2213/72 , H01L27/285
摘要： The subject invention provides systems and methods that facilitate formation of semiconductor memory devices comprising memory cells with one or more injecting bilayer electrodes. Memory arrays generally comprise bit cells that have two discrete components; a memory element and a selection element, such as, for example, a diode. The invention increases the efficiency of a memory device by forming memory cells with selection diodes comprising a bilayer electrode. Memory cells are provided comprising bilayer cathodes and/or bilayer anodes that facilitate a significant improvement in charge injection into the diode layers of memory cells. The increased charge (e.g. electrons or holes) density in the diode layers of the selected memory cells results in improved memory cell switching times and lowers the voltage required for the memory cell to operate, thereby, creating a more efficient memory cell.
摘要翻译：本发明提供了便于形成包括具有一个或多个注入双层电极的存储器单元的半导体存储器件的系统和方法。存储器阵列通常包括具有两个分立组件的位单元; 存储元件和选择元件，例如二极管。本发明通过形成具有包括双层电极的选择二极管的存储单元来提高存储器件的效率。提供包含双层阴极和/或双层阳极的存储器单元，其有助于电荷注入到存储器单元的二极管层中的显着改进。所选择的存储器单元的二极管层中的增加的电荷（例如电子或空穴）密度导致改善的存储单元切换时间并降低存储器单元操作所需的电压，从而创建更有效的存储单元。

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