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    • 5. 发明申请
    • DISPLAY DEVICE
    • 显示设备
    • US20120092302A1
    • 2012-04-19
    • US13379783
    • 2010-02-26
    • Hajime ImaiTakuya WatanabeAtsuhito MuraiHideki Kitagawa
    • Hajime ImaiTakuya WatanabeAtsuhito MuraiHideki Kitagawa
    • G06F3/042
    • H01L27/1214G02F1/13318G06F3/0412G06F3/042G09G3/3225G09G2300/0809G09G2360/14H01L27/12H01L27/3269H01L31/03682H01L31/03762H01L31/1136Y02E10/546Y02E10/548
    • It is an object of the present invention to provide a display device equipped with a display panel that is provided with a photo-detection section with improved accuracy of detecting a touch position. A display panel (11) of an organic EL display device (10) includes a photo-detection section (40) that detects reflected light when a screen is touched by a finger or the like. The photo-detection section (40) includes a photodiode (41) that receives the reflected light, and an output amplifier (42) that outputs an output voltage corresponding to the amount of the received light. If an a-Si diode is used for such a photodiode (41), a sufficiently large signal difference in sensitivity between the bright state and the dark state can be achieved. Also, if a p-Si amplifier is used for the output amplifier (42), the output voltage becomes the saturation voltage at the time of read-out. This allows the p-Si amplifier to directly output the large sensitivity difference detected by the a-Si diode as a large difference in the output voltage.
    • 本发明的目的是提供一种配备有显示面板的显示装置,该显示面板具有提高检测触摸位置的精度的光检测部。 有机EL显示装置(10)的显示面板(11)具有检测手指等触摸屏幕时的反射光的光检测部(40)。 光检测部分(40)包括接收反射光的光电二极管(41)和输出与接收光量对应的输出电压的输出放大器(42)。 如果对这种光电二极管(41)使用a-Si二极管,则可以实现明亮状态和暗态之间的足够大的灵敏度信号差。 此外,如果使用p-Si放大器作为输出放大器(42),则输出电压成为读出时的饱和电压。 这允许p-Si放大器直接输出由a-Si二极管检测的大的灵敏度差,作为输出电压的大差异。
    • 6. 发明申请
    • TOUCH PANEL, DISPLAY DEVICE INCLUDING THE SAME, AND LIQUID CRYSTAL DISPLAY DEVICE
    • 触控面板,包括其的显示装置和液晶显示装置
    • US20110169761A1
    • 2011-07-14
    • US13063215
    • 2009-06-17
    • Takehiko SakaiDai ChibaYoshiharu KataokaTakuya WatanabeShogo Nishiwaki
    • Takehiko SakaiDai ChibaYoshiharu KataokaTakuya WatanabeShogo Nishiwaki
    • G06F3/041G09G3/36
    • G06F3/0412G02F1/13338G06F3/047
    • A liquid crystal display device includes an active matrix substrate (20a) including a plurality of first touch panel interconnects (19b) extending in parallel with each other, a counter substrate (30a) facing the active matrix substrate (20a) and including a plurality of second touch panel interconnects (25a) extending in parallel with each other in a direction intersecting the first touch panel interconnects (19b), and a liquid crystal layer (40) provided between the active matrix substrate (20a) and the counter substrate (30a) with an alignment film (9a, 9b) being interposed between the liquid crystal layer (40) and each of the active matrix substrate (20a) and the counter substrate (30a). The first touch panel interconnects (19b) each have a plurality of first touch pins (Pa) having a columnar shape in regions where the first touch panel interconnects (19b) intersect the second touch panel interconnects (25a). The second touch panel interconnects (25a) each have a plurality of second touch pins (Pb) having a columnar shape in regions where the second touch panel interconnects (25a) intersect the first touch panel interconnects (19b).
    • 一种液晶显示装置,具备包括彼此平行延伸的多个第一触摸面板互连件(19b)的有源矩阵基板(20a),与该有源矩阵基板(20a)相对的对置基板(30a) 在与第一触摸面板互连(19b)相交的方向上彼此平行延伸的第二触摸面板互连(25a)和设置在有源矩阵基板(20a)和对置基板(30a)之间的液晶层(40) 在液晶层(40)和有源矩阵基板(20a)和对置基板(30a)之间插入取向膜(9a,9b)。 第一触摸面板互连(19b)在第一触摸面板互连(19b)与第二触摸面板互连(25a)相交的区域中分别具有多个具有柱状的第一触摸引脚(Pa)。 第二触摸面板互连(25a)在第二触摸面板互连(25a)与第一触摸面板互连(19b)相交的区域中分别具有多个具有柱状的第二触摸引脚(Pb)。
    • 8. 发明授权
    • Thin film transistor, its manufacture method and display device
    • 薄膜晶体管,其制造方法和显示装置
    • US07394098B2
    • 2008-07-01
    • US11710168
    • 2007-02-23
    • Takuya HiranoTakuya Watanabe
    • Takuya HiranoTakuya Watanabe
    • H01L29/04
    • H01L27/12H01L27/1281H01L29/66757H01L29/78621H01L29/78633H01L29/78675
    • On an insulating substrate, a first insulating buffer layer, a heat accumulating-light shielding layer having at least a silicon layer on the surface thereof, a second insulating buffer layer and a first silicon layer are laminated in the order recited from the bottom. The lamination structure of the heat accumulating-light shielding layer, second buffer layer and first silicon layer is patterned. A laser beam is applied the patterned first silicon layer to melt and crystallize the first silicon layer. A thin film transistor is formed by using the crystallized first silicon layer. A polysilicon thin film transistor of high performance and small leak current to be caused by light as well as a display device using such thin film transistors is provided.
    • 在绝缘基板上,以从底部开始的顺序层叠第一绝缘缓冲层,其表面上至少具有硅层的蓄热光屏蔽层,第二绝缘缓冲层和第一硅层。 对蓄热光屏蔽层,第二缓冲层和第一硅层的叠层结构进行图案化。 对图案化的第一硅层施加激光束以熔化和结晶第一硅层。 通过使用结晶的第一硅层形成薄膜晶体管。 提供了由光引起的高性能和小的漏电流的多晶硅薄膜晶体管以及使用这种薄膜晶体管的显示装置。