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1. 发明授权

US08722325B2 Genetic changes in ATM and ATR/CHEK1 as prognostic indicators in cancer 有权
标题翻译： ATM和ATR / CHEK1作为癌症预后指标的遗传变化
公开(公告)号：US08722325B2
公开(公告)日：2014-05-13
申请号：US13480358
申请日：2012-05-24
申请人： Susanne M. Gollin , Rahul Atul Parikh , Xin Huang
发明人： Susanne M. Gollin , Rahul Atul Parikh , Xin Huang
IPC分类号： C12Q1/68
CPC分类号： C12Q1/6886 , G01N33/5091 , G01N33/57484
摘要： The present invention relates to the discovery that, in human cancer, an 11q deletion of ATM together with an increase in ATR and CHEK1 expression correlates with resistance to ionizing radiation which could be overcome by inhibition of the ATR/CHEK1 pathway. It provides for methods of identifying patients unlikely to exhibit an adequate response to radiation therapy and/or chemotherapy who may benefit from ATR/CHEK1 pathway inhibition, as well as methods of treating said patients.
摘要翻译：本发明涉及这样的发现：在人类癌症中，ATM的11q缺失与ATR和CHEK1表达的增加一起与电离辐射的抗性相关，可以通过抑制ATR / CHEK1途径来克服。它提供了鉴定不太可能对可能受益于ATR / CHEK1途径抑制的放射治疗和/或化学疗法表现出足够反应的患者的方法，以及治疗所述患者的方法。

2. 发明申请

US20120295951A1 GENETIC CHANGES IN ATM AND ATR/CHEK1 AS PROGNOSTIC INDICATORS IN CANCER 有权
标题翻译： ATM和ATR / CHEK1中的遗传变化作为癌症中的预后指标
公开(公告)号：US20120295951A1
公开(公告)日：2012-11-22
申请号：US13480358
申请日：2012-05-24
申请人： Susanne M. Gollin , Rahul Atul Parikh , Xin Huang
发明人： Susanne M. Gollin , Rahul Atul Parikh , Xin Huang
IPC分类号： C12Q1/68 , G01N21/64 , A61K31/713 , A61P35/00 , A61K31/4709 , A61K31/4965 , A61K31/497 , C12Q1/06 , A61K31/7105
CPC分类号： C12Q1/6886 , G01N33/5091 , G01N33/57484
摘要： The present invention relates to the discovery that, in human cancer, an 11q deletion of ATM together with an increase in ATR and CHEK1 expression correlates with resistance to ionizing radiation which could be overcome by inhibition of the ATR/CHEK1 pathway. It provides for methods of identifying patients unlikely to exhibit an adequate response to radiation therapy and/or chemotherapy who may benefit from ATR/CHEK1 pathway inhibition, as well as methods of treating said patients.
摘要翻译：本发明涉及这样的发现：在人类癌症中，ATM的11q缺失与ATR和CHEK1表达的增加一起与电离辐射的抗性相关，可以通过抑制ATR / CHEK1途径来克服。它提供了鉴定不太可能对可能受益于ATR / CHEK1途径抑制的放射治疗和/或化学疗法表现出足够反应的患者的方法，以及治疗所述患者的方法。

3. 发明授权

US08263329B2 Genetic changes in ATM and ATR/CHEK1 as prognostic indicators in cancer 有权
公开(公告)号：US08263329B2
公开(公告)日：2012-09-11
申请号：US12079900
申请日：2008-03-28
申请人： Susanne M. Gollin , Rahul Atul Parikh , Xin Huang
发明人： Susanne M. Gollin , Rahul Atul Parikh , Xin Huang
IPC分类号： C12Q1/68
CPC分类号： C12Q1/6886 , G01N33/5091 , G01N33/57484
摘要： The present invention relates to the discovery that, in human cancer, an 11q deletion of ATM together with an increase in ATR and CHEK1 expression correlates with resistance to ionizing radiation which could be overcome by inhibition of the ATR/CHEK1 pathway. It provides for methods of identifying patients unlikely to exhibit an adequate response to radiation therapy and/or chemotherapy who may benefit from ATR/CHEK1 pathway inhibition, as well as methods of treating said patients.

4. 发明申请

US20100324112A1 Genetic changes in ATM and ATR/CHEK1 as prognostic indicators in cancer 有权
公开(公告)号：US20100324112A1
公开(公告)日：2010-12-23
申请号：US12079900
申请日：2008-03-28
申请人： Susanne M. Gollin , Rahul Atul Parikh , Xin Huang
发明人： Susanne M. Gollin , Rahul Atul Parikh , Xin Huang
IPC分类号： A61K31/7088 , C12Q1/68 , C12Q1/02 , A61P35/04
CPC分类号： C12Q1/6886 , G01N33/5091 , G01N33/57484
摘要： The present invention relates to the discovery that, in human cancer, an 11q deletion of ATM together with an increase in ATR and CHEK1 expression correlates with resistance to ionizing radiation which could be overcome by inhibition of the ATR/CHEK1 pathway. It provides for methods of identifying patients unlikely to exhibit an adequate response to radiation therapy and/or chemotherapy who may benefit from ATR/CHEK1 pathway inhibition, as well as methods of treating said patients.

5. 发明授权

US08173366B2 Genetic changes in ATM and ATR/CHEK1 as prognostic indicators in cancer 有权
标题翻译： ATM和ATR / CHEK1作为癌症预后指标的遗传变化
公开(公告)号：US08173366B2
公开(公告)日：2012-05-08
申请号：US12586052
申请日：2009-09-15
申请人： Susanne M. Gollin , Rahul Atul Parikh , Xin Huang
发明人： Susanne M. Gollin , Rahul Atul Parikh , Xin Huang
IPC分类号： C12Q1/68
CPC分类号： C12Q1/6886 , A61K31/7088 , A61K31/7105 , A61K45/06 , C12Q1/6841 , C12Q2600/106 , G01N33/57407 , G01N2333/91215 , G01N2800/52 , A61K2300/00
摘要： The present invention relates to the discovery that, in human cancer, an 11q deletion of ATM together with an increase in ATR and CHEK1 expression correlates with resistance to ionizing radiation which could be overcome by inhibition of the ATR/CHEK1 pathway. It provides for methods of identifying patients unlikely to exhibit an adequate response to radiation therapy and/or chemotherapy who may benefit from ATR/CHEK1 pathway inhibition, as well as methods of treating said patients.
摘要翻译：本发明涉及这样的发现：在人类癌症中，ATM的11q缺失与ATR和CHEK1表达的增加一起与电离辐射的抗性相关，可以通过抑制ATR / CHEK1途径来克服。它提供了鉴定不太可能对可能受益于ATR / CHEK1途径抑制的放射治疗和/或化学疗法表现出足够反应的患者的方法，以及治疗所述患者的方法。

6. 发明授权

US08466123B2 Genetic changes in ATM and ATR/CHEK1 as prognostic indicators in cancer 有权
公开(公告)号：US08466123B2
公开(公告)日：2013-06-18
申请号：US13407165
申请日：2012-02-28
申请人： Susanne M. Gollin , Rahul Atul Parikh , Xin Huang
发明人： Susanne M. Gollin , Rahul Atul Parikh , Xin Huang
IPC分类号： A61K48/00 , C12Q1/68
CPC分类号： C12Q1/6886 , A61K31/7088 , A61K31/7105 , A61K45/06 , C12Q1/6841 , C12Q2600/106 , G01N33/57407 , G01N2333/91215 , G01N2800/52 , A61K2300/00
摘要： The present invention relates to the discovery that, in human cancer, an 11q deletion of ATM together with an increase in ATR and CHEK1 expression correlates with resistance to ionizing radiation which could be overcome by inhibition of the ATR/CHEK1 pathway. It provides for methods of identifying patients unlikely to exhibit an adequate response to radiation therapy and/or chemotherapy who may benefit from ATR/CHEK1 pathway inhibition, as well as methods of treating said patients.

7. 发明申请

US20100173971A1 Genetic changes in ATM and ATR/CHEK1 as prognostic indicators in cancer 有权
标题翻译： ATM和ATR / CHEK1作为癌症预后指标的遗传变化
公开(公告)号：US20100173971A1
公开(公告)日：2010-07-08
申请号：US12586052
申请日：2009-09-15
申请人： Susanne M. Gollin , Rahul Atul Parikh , Xin Huang
发明人： Susanne M. Gollin , Rahul Atul Parikh , Xin Huang
IPC分类号： A61K31/7088 , C12Q1/68 , C12Q1/02
CPC分类号： C12Q1/6886 , A61K31/7088 , A61K31/7105 , A61K45/06 , C12Q1/6841 , C12Q2600/106 , G01N33/57407 , G01N2333/91215 , G01N2800/52 , A61K2300/00
摘要： The present invention relates to the discovery that, in human cancer, an 11q deletion of ATM together with an increase in ATR and CHEK1 expression correlates with resistance to ionizing radiation which could be overcome by inhibition of the ATR/CHEK1 pathway. It provides for methods of identifying patients unlikely to exhibit an adequate response to radiation therapy and/or chemotherapy who may benefit from ATR/CHEK1 pathway inhibition, as well as methods of treating said patients.
摘要翻译：本发明涉及这样的发现：在人类癌症中，ATM的11q缺失与ATR和CHEK1表达的增加一起与电离辐射的抗性相关，可以通过抑制ATR / CHEK1途径来克服。它提供了鉴定不太可能对可能受益于ATR / CHEK1途径抑制的放射治疗和/或化学疗法表现出足够反应的患者的方法，以及治疗所述患者的方法。

8. 发明申请

US20120220645A1 GENETIC CHANGES IN ATM AND ATR/CHEK1 AS PROGNOSTIC INDICATORS IN CANCER 有权
公开(公告)号：US20120220645A1
公开(公告)日：2012-08-30
申请号：US13407165
申请日：2012-02-28
申请人： Susanne M. Gollin , Rahul Atul Parikh , Xin Huang
发明人： Susanne M. Gollin , Rahul Atul Parikh , Xin Huang
IPC分类号： A61K31/7088 , G01N33/566 , C12Q1/68 , G01N21/64 , A61P35/00
CPC分类号： C12Q1/6886 , A61K31/7088 , A61K31/7105 , A61K45/06 , C12Q1/6841 , C12Q2600/106 , G01N33/57407 , G01N2333/91215 , G01N2800/52 , A61K2300/00
摘要： The present invention relates to the discovery that, in human cancer, an 11q deletion of ATM together with an increase in ATR and CHEK1 expression correlates with resistance to ionizing radiation which could be overcome by inhibition of the ATR/CHEK1 pathway. It provides for methods of identifying patients unlikely to exhibit an adequate response to radiation therapy and/or chemotherapy who may benefit from ATR/CHEK1 pathway inhibition, as well as methods of treating said patients.

9. 发明申请

US20160071224A1 Smart Table Service 审中-公开
标题翻译：智能表服务
公开(公告)号：US20160071224A1
公开(公告)日：2016-03-10
申请号：US14480530
申请日：2014-09-08
申请人： Xin Huang
发明人： Xin Huang
IPC分类号： G06Q50/12 , G06Q20/10 , G06Q20/32
CPC分类号： G06Q50/12 , G06Q20/102 , G06Q20/204 , G06Q20/322 , G06Q20/3276
摘要： The instant application discloses, among other things, a Smart Table Service. In one embodiment, it may include ways for any entity, such as a restaurant, for example, to provide services to patrons, who may use their own devices. For instance, a restaurant may provide a linear barcode or quick response (QR) barcode, or other machine-readable symbol associated with a table, bar seat, or other location where a patron may wish to order, pay, call wait staff, or request other services. A patron at a location may scan a provided code using any device such as a smartphone, smartwatch, or intelligent eyewear, for example, and a server may receive a message indicating the location. In response to the location, the server may provide a web site or communicate with an app on the patron's device, allowing the patron to perform an action, such as ordering or paying.
摘要翻译：本应用程序尤其公开了智能表服务。在一个实施例中，它可以包括诸如餐馆的任何实体（例如，向可以使用其自己的设备的顾客提供服务）的方式。例如，餐厅可以提供线性条形码或快速响应（QR）条形码或与桌子，酒吧座位或顾客可能希望订购，支付，呼叫等待人员或其他地点的其他位置相关联的其他机器可读符号请求其他服务。例如，位置的顾客可以使用例如智能电话，智能手表或智能眼镜等任何设备来扫描提供的代码，并且服务器可以接收指示位置的消息。响应于该位置，服务器可以提供网站或与顾客设备上的应用通信，允许顾客执行诸如订购或支付的动作。

10. 发明授权

US09034702B2 Method for fabricating silicon nanowire field effect transistor based on wet etching 有权
标题翻译：基于湿蚀刻制造硅纳米线场效应晶体管的方法
公开(公告)号：US09034702B2
公开(公告)日：2015-05-19
申请号：US13511123
申请日：2011-11-18
申请人： Ru Huang , Jiewen Fan , Yujie Ai , Shuai Sun , Runsheng Wang , Jibin Zou , Xin Huang
发明人： Ru Huang , Jiewen Fan , Yujie Ai , Shuai Sun , Runsheng Wang , Jibin Zou , Xin Huang
IPC分类号： H01L21/336 , H01L21/8234 , H01L29/66 , H01L29/423 , H01L29/786
CPC分类号： H01L29/66772 , H01L29/42392 , H01L29/78696
摘要： Disclosed herein is a method for fabricating a silicon nanowire field effect transistor based on a wet etching. The method includes defining an active region; depositing a silicon oxide film as a hard mask, forming a pattern of a source and a drain and a fine bar connecting the source and the drain; transferring the pattern on the hard mask to a silicon substrate by performing etching process for the silicon substrate; performing ion implanting; etching the silicon substrate by wet etching, so that the silicon fine bar connecting the source and the drain is suspended; reducing the silicon fine bar to a nano size to form a silicon nanowire; depositing a polysilicon film; forming a polysilicon gate line acrossing the silicon nanowire by electron beam lithography and forming a structure of nanowire-all-around; forming a silicon oxide sidewall at both sides of the polysilicon gate line, by depositing a silicon oxide film and subsequently etching the silicon oxide film; forming the source and the drain by using ion implantation and high temperature annealing, so that the silicon nanowire field effect transistor is finally fabricated. The method is compatible with a conventional integrated circuit fabrication technology. The fabrication process is simple and convenient, and has a short cycle.
摘要翻译：本文公开了一种基于湿蚀刻制造硅纳米线场效应晶体管的方法。该方法包括定义活动区域; 沉积氧化硅膜作为硬掩模，形成源极和漏极的图案以及连接源极和漏极的细棒; 通过对硅衬底进行蚀刻处理，将硬掩模上的图案转移到硅衬底; 进行离子注入; 通过湿蚀刻蚀刻硅衬底，使得连接源极和漏极的硅细棒悬空; 将硅细棒还原成纳米尺寸以形成硅纳米线; 沉积多晶硅膜; 通过电子束光刻形成跨越硅纳米线的多晶硅栅极线，并形成全纳米线的结构; 在多晶硅栅极线的两侧形成硅氧化物侧壁，通过沉积氧化硅膜并随后蚀刻氧化硅膜; 通过离子注入和高温退火形成源极和漏极，从而最终制造出硅纳米线场效应晶体管。该方法与传统的集成电路制造技术相兼容。制造工艺简单方便，循环周期短。

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