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    • 1. 发明授权
    • Methods and materials for selective modification of photopatterned polymer films
    • 用于选择性修饰光图案化聚合物膜的方法和材料
    • US06436615B1
    • 2002-08-20
    • US09339917
    • 1999-06-25
    • Susan L. BrandowJeffrey M. CalvertWalter M. DressickCharles S. Dulcey
    • Susan L. BrandowJeffrey M. CalvertWalter M. DressickCharles S. Dulcey
    • G03F700
    • G03F7/265G03F7/165G03F7/26H05K3/185
    • An aspect of the present invention is a process for modifying a substrate in areas that are exposed to actinic radiation, having the steps: (a) providing on the substrate functional groups adapted for conversion to oxygen-containing photoproducts upon exposure to actinic radiation; (b) exposing at least a portion of the substrate to the actinic radiation, converting the functional groups in an exposed region of the substrate to the photoproducts; (c) contacting the photoproducts with a primary or secondary amine in the presence of hydrogen ions, forming imine groups; and (d) contacting the imine groups with a reducing agent, forming amine groups on the substrate in the exposed region. Another aspect of the present invention is a process for modifying a substrate in areas that are unexposed to actinic radiation, having the steps: (a) providing on the substrate aryl functional groups adapted for conversion to oxygen-containing photoproducts upon exposure to actinic radiation; (b) exposing a portion of the substrate to the actinic radiation, converting the aryl functional groups in an exposed region of the substrate to the photoproducts, and not converting the aryl functional groups in an unexposed region of the substrate to the photoproducts; (c) contacting the aryl functional groups in the unexposed region of the substrate with a compound adapted for physisorption to the aryl functional groups, preferentially physisorbing the compound onto the substrate in the unexposed regions.
    • 本发明的一个方面是在暴露于光化辐射的区域中修饰底物的方法,具有以下步骤:(a)在暴露于光化辐射下适于转化为含氧光产物的基底上的官能团; (b)将所述基底的至少一部分暴露于所述光化辐射,将所述基底的暴露区域中的官能团转化为所述光产物; (c)在氢离子存在下使光产物与伯胺或仲胺接触,形成亚胺基团; 和(d)使亚胺基团与还原剂接触,在暴露区域的基底上形成胺基。 本发明的另一方面是用于在未曝光于光化辐射的区域中修饰底物的方法,其具有以下步骤:(a)在曝光于光化辐射时适于转化为含氧光产物的芳基官能团; (b)将基底的一部分暴露于光化辐射,将底物的暴露区域中的芳基官能团转化为光产物,而不将基底的未曝光区域中的芳基官能团转化为光产物; (c)将底物的未曝光区域中的芳基官能团与适于物理吸附到芳基官能团的化合物接触,优先将该化合物物理吸附到未曝光区域的基底上。