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1. 发明申请

US20100264454A1 SEMICONDUCTOR LIGHT EMITTING DEVICE GROWING ACTIVE LAYER ON TEXTURED SURFACE 有权
标题翻译：半导体发光器件在纹理表面上生长活性层
公开(公告)号：US20100264454A1
公开(公告)日：2010-10-21
申请号：US12830885
申请日：2010-07-06
申请人： Sungsoo YI , Nathan F. GARDNER , Michael R. KRAMES , Linda T. ROMANO
发明人： Sungsoo YI , Nathan F. GARDNER , Michael R. KRAMES , Linda T. ROMANO
IPC分类号： H01L33/02 , H01L33/00
CPC分类号： H01L33/007 , H01L33/08 , H01L33/12 , H01L33/22
摘要： In accordance with embodiments of the invention, at least partial strain relief in a light emitting layer of a III-nitride light emitting device is provided by configuring the surface on which at least one layer of the device grows such that the layer expands laterally and thus at least partially relaxes. This layer is referred to as the strain-relieved layer. In some embodiments, the light emitting layer itself is the strain-relieved layer, meaning that the light emitting layer is grown on a surface that allows the light emitting layer to expand laterally to relieve strain. In some embodiments, a layer grown before the light emitting layer is the strain-relieved layer. In a first group of embodiments, the strain-relieved layer is grown on a textured surface.
摘要翻译：根据本发明的实施例，III族氮化物发光器件的发光层中的至少部分应变消除通过配置其上至少一层器件的表面生长使得该层横向膨胀的表面来提供至少部分放松。该层被称为应变消除层。在一些实施例中，发光层本身是应变消除层，这意味着发光层在允许发光层横向膨胀以减轻应变的表面上生长。在一些实施例中，在发光层之前生长的层是应变消除层。在第一组实施方案中，应变消除层在纹理表面上生长。

2. 发明申请

US20090230381A1 AlInGaP LED HAVING REDUCED TEMPERATURE DEPENDENCE 有权
标题翻译： AlInGaP LED具有降低的温度依赖性
公开(公告)号：US20090230381A1
公开(公告)日：2009-09-17
申请号：US12433106
申请日：2009-04-30
申请人： Michael R. KRAMES , Nathan F. Gardner , Frank M. Steranka
发明人： Michael R. KRAMES , Nathan F. Gardner , Frank M. Steranka
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , H01L2224/13 , H01L2924/00011 , H01L2924/00014 , H01L2224/0401
摘要： To increase the lattice constant of AlInGaP LED layers to greater than the lattice constant of GaAs for reduced temperature sensitivity, an engineered growth layer is formed over a substrate, where the growth layer has a lattice constant equal to or approximately equal to that of the desired AlInGaP layers. In one embodiment, a graded InGaAs or InGaP layer is grown over a GaAs substrate. The amount of indium is increased during growth of the layer such that the final lattice constant is equal to that of the desired AlInGaP active layer. In another embodiment, a very thin InGaP, InGaAs, or AlInGaP layer is grown on a GaAs substrate, where the InGaP, InGaAs, or AlInGaP layer is strained (compressed). The InGaP, InGaAs, or AlInGaP thin layer is then delaminated from the GaAs and relaxed, causing the lattice constant of the thin layer to increase to the lattice constant of the desired overlying AlInGaP LED layers. The LED layers are then grown over the thin InGaP, InGaAs, or AlInGaP layer.
摘要翻译：为了将AlInGaP LED层的晶格常数提高到大于GaAs的晶格常数以降低温度敏感性，在衬底上形成工程化生长层，其中生长层具有等于或近似等于所需的晶格常数的晶格常数 AlInGaP层。在一个实施例中，在GaAs衬底上生长渐变的InGaAs或InGaP层。在层的生长期间铟的量增加，使得最终晶格常数等于所需的AlInGaP活性层的量。在另一实施例中，在GaAs衬底上生长非常薄的InGaP，InGaAs或AlInGaP层，其中InGaP，InGaAs或AlInGaP层被应变（压缩）。然后，InGaP，InGaAs或AlInGaP薄层从GaAs分层并且弛豫，导致薄层的晶格常数增加到期望的上覆AlInGaP LED层的晶格常数。然后在薄的InGaP，InGaAs或AlInGaP层上生长LED层。

3. 发明申请

US20100289044A1 WAVELENGTH CONVERSION FOR PRODUCING WHITE LIGHT FROM HIGH POWER BLUE LED 审中-公开
标题翻译：用于从大功率蓝光LED生产白光的波长转换
公开(公告)号：US20100289044A1
公开(公告)日：2010-11-18
申请号：US12464327
申请日：2009-05-12
申请人： Michael R. KRAMES , Gerd O. MUELLER , Regina B. MUELLER-MACH , Hans-Helmut BECHTEL , Peter J. SCHMIDT
发明人： Michael R. KRAMES , Gerd O. MUELLER , Regina B. MUELLER-MACH , Hans-Helmut BECHTEL , Peter J. SCHMIDT
IPC分类号： H01L33/00
CPC分类号： C09K11/08 , H01L33/504 , H05B33/14 , Y02B20/181
摘要： A white light LED is described that uses an LED die that emits visible blue light in a wavelength range of about 450-470 nm. A red phosphor or quantum dot material converts some of the blue light to a visible red light having a peak wavelength between about 605-625 nm with a full-width-half-maximum (FWHM) less than 80 nm. A green phosphor or quantum dot material converts some of the blue light to a green light having a FWHM greater than 40 nm, wherein the combination of the blue light, red light, and green light produces a white light providing a color rendering of Ra,8>90 and a color temperature of between 2500K-5000K. Preferably, the red and green converting material do not saturate with an LED die output of 100 W/cm2 and can reliably operate with an LED die junction temperature over 100 degrees C.
摘要翻译：描述了使用发射在约450-470nm的波长范围内的可见蓝光的LED管芯的白光LED。红色荧光体或量子点材料将一些蓝色光转换成具有在约605-625nm之间的峰值波长和小于80nm的全宽半最大值（FWHM）的可见红光。绿色荧光体或量子点材料将一些蓝色光转换成具有大于40nm的FWHM的绿色光，其中蓝色光，红色光和绿色光的组合产生提供Ra的显色性的白色光， 8> 90，色温在2500K-5000K之间。优选地，红色和绿色转换材料对于100W / cm 2的LED管芯输出不饱和，并且可以在LED管芯结温超过100摄氏度时可靠地工作。

4. 发明申请

US20100109568A1 COMMON OPTICAL ELEMENT FOR AN ARRAY OF PHOSPHOR CONVERTED LLIGHT EMITTING DEVICES 有权
标题翻译：磷光转换发光装置阵列的通用光学元件
公开(公告)号：US20100109568A1
公开(公告)日：2010-05-06
申请号：US12686209
申请日：2010-01-12
申请人： Michael D. CAMRAS , William R. IMLER , Franklin J. WALL, JR. , Frank M. STERANKA , Michael R. KRAMES , Helena TICHA , Ladislav TICHY , Robertus G. Alferink
发明人： Michael D. CAMRAS , William R. IMLER , Franklin J. WALL, JR. , Frank M. STERANKA , Michael R. KRAMES , Helena TICHA , Ladislav TICHY , Robertus G. Alferink
IPC分类号： H05B37/02 , H01L21/50 , H01L33/00
CPC分类号： H05B33/0857 , H01L25/0753 , H01L33/58 , H01L2924/0002 , H01L2924/00
摘要： A device is provided with an array of a plurality of phosphor converted light emitting devices (LEDs) that produce broad spectrum light. The phosphor converted LEDs may produce light with different correlated color temperature (CCT) and are covered with an optical element that assists in mixing the light from the LEDs to produce a desired correlated color temperature. The optical element may be bonded to the phosphor converted light emitting devices. The optical element may be a dome mounted over the phosphor converted light emitting devices and filled with an encapsulant.
摘要翻译：设备具有产生广谱光的多个磷光体转换发光器件（LED）的阵列。磷光体转换的LED可以产生具有不同相关色温（CCT）的光，并且被有助于混合来自LED的光以产生期望的相关色温的光学元件覆盖。光学元件可以结合到磷光体转换的发光器件上。光学元件可以是安装在磷光体转换的发光器件上并且填充有密封剂的圆顶。

5. 发明申请

US20100109030A1 SERIES CONNECTED FLIP CHIP LEDS WITH GROWTH SUBSTRATE REMOVED 有权
标题翻译：系列连接的切片芯片，带有生长基板去除
公开(公告)号：US20100109030A1
公开(公告)日：2010-05-06
申请号：US12266162
申请日：2008-11-06
申请人： Michael R. KRAMES , John E. EPLER , Daniel A. STEIGERWALD , Tal MARGALITH
发明人： Michael R. KRAMES , John E. EPLER , Daniel A. STEIGERWALD , Tal MARGALITH
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L21/2654 , H01L27/153
摘要： LED layers are grown over a sapphire substrate. Individual flip chip LEDs are formed by trenching or masked ion implantation. Modules containing a plurality of LEDs are diced and mounted on a submount wafer. A submount metal pattern or a metal pattern formed on the LEDs connects the LEDs in a module in series. The growth substrate is then removed, such as by laser lift-off. A semi-insulating layer is formed, prior to or after mounting, that mechanically connects the LEDs together. The semi-insulating layer may be formed by ion implantation of a layer between the substrate and the LED layers. PEC etching of the semi-insulating layer, exposed after substrate removal, may be performed by biasing the semi-insulating layer. The submount is then diced to create LED modules containing series-connected LEDs.
摘要翻译： LED层生长在蓝宝石衬底上。单个倒装芯片LED通过挖沟或掩模离子注入形成。包含多个LED的模块被切割并安装在底座晶片上。在LED上形成的基座金属图案或金属图案将模块中的LED串联连接。然后去除生长衬底，例如通过激光剥离。在安装之前或之后形成半绝缘层，将LED机械连接在一起。半绝缘层可以通过在衬底和LED层之间离子注入层来形成。可以通过偏置半绝缘层来执行衬底去除后露出的半绝缘层的PEC蚀刻。然后将底座切成块，以创建包含串联LED的LED模块。

6. 发明申请

US20110175112A1 III-V LIGHT EMITTING DEVICE INCLUDING A LIGHT EXTRACTING STRUCTURE 有权
标题翻译： III-V发光装置，包括光提取结构
公开(公告)号：US20110175112A1
公开(公告)日：2011-07-21
申请号：US12688209
申请日：2010-01-15
申请人： Aurelien J. F. DAVID , Michael R. KRAMES , Melvin B. McLAURIN
发明人： Aurelien J. F. DAVID , Michael R. KRAMES , Melvin B. McLAURIN
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22 , H01L2933/0083
摘要： Embodiments of the invention include a substrate comprising a host and a seed layer bonded to the host, and a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region grown over the seed layer. A variation in index of refraction in a direction perpendicular to a growth direction of the semiconductor structure is disposed between the host and the light emitting layer.
摘要翻译：本发明的实施方案包括包含与主体结合的主体和种子层的基板，以及包括设置在种子层上生长的n型区域和p型区域之间的发光层的半导体结构。在垂直于半导体结构的生长方向的方向上的折射率的变化设置在主体和发光层之间。

7. 发明申请

US20100295090A1 MOUNT FOR A SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件的安装
公开(公告)号：US20100295090A1
公开(公告)日：2010-11-25
申请号：US12850213
申请日：2010-08-04
申请人： M. George CRAFORD , Michael R. KRAMES
发明人： M. George CRAFORD , Michael R. KRAMES
IPC分类号： H01L33/52 , H01L33/62 , H01L33/00
CPC分类号： H01L33/62 , H01L33/642 , H01L33/647 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/056 , H01L2224/16 , H01L2924/00014 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A mount for a semiconductor device includes a carrier, at least two metal leads disposed on a bottom surface of the carrier, and a cavity extending through a thickness of the carrier to expose a portion of the top surfaces of the metal leads. A semiconductor light emitting device is positioned in the cavity and is electrically and physically connected to the metal leads. The carrier may be, for example, silicon, and the leads may be multilayer structures, for example a thin gold layer connected to a thick copper layer.
摘要翻译：用于半导体器件的安装件包括载体，设置在载体的底表面上的至少两个金属引线和延伸穿过载体厚度的空腔以暴露金属引线的顶表面的一部分。半导体发光器件位于空腔中，并且与金属引线电连接并物理连接。载体可以是例如硅，并且引线可以是多层结构，例如连接到厚铜层的薄金层。

8. 发明申请

US20100072489A1 SEMICONDUCTOR LIGHT EMITTING DEVICES GROWN ON COMPOSITE SUBSTRATES 有权
标题翻译：在复合基板上形成的半导体发光器件
公开(公告)号：US20100072489A1
公开(公告)日：2010-03-25
申请号：US12236853
申请日：2008-09-24
申请人： Melvin B. MCLAURIN , Michael R. KRAMES
发明人： Melvin B. MCLAURIN , Michael R. KRAMES
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L27/153 , H01L27/156 , H01L33/007 , H01L33/08 , H01L33/12 , H01L33/382 , H01L33/385 , H01L33/42 , H01L33/505 , H01L33/62 , H01L2224/24 , H01L2933/0016
摘要： A plurality of III-nitride semiconductor structures, each comprising a light emitting layer disposed between an n-type region and a p-type region, are grown on a composite substrate. The composite substrate includes a plurality of islands of III-nitride material connected to a host by a bonding layer. The plurality of III-nitride semiconductor structures are grown on the III-nitride islands. The composite substrate may be formed such that each island of III-nitride material is at least partially relaxed. As a result, the light emitting layer of each semiconductor structure has an a-lattice constant greater than 3.19 angstroms.
摘要翻译：在复合基板上生长各自包含设置在n型区域和p型区域之间的发光层的III族氮化物半导体结构体。复合衬底包括通过结合层连接到主体的多个III族氮化物材料岛。在III族氮化物岛上生长多个III族氮化物半导体结构。复合衬底可以形成为使得每个岛状III族氮化物材料至少部分地松弛。结果，每个半导体结构的发光层的a晶格常数大于3.19埃。

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