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1. 发明授权

US07741042B2 Method for preparing a DNA chip and use thereof 有权
标题翻译： DNA芯片的制备方法及其用途
公开(公告)号：US07741042B2
公开(公告)日：2010-06-22
申请号：US11578634
申请日：2004-04-19
申请人： Sung-Whan An , Chi-Wang Yoon , Tae-Jeong Oh , Dae-Kyung Yoon , Sun-Woo Lee , Myung-Soon Kim , Suk-Kyung Woo , Keun Ha Kim
发明人： Sung-Whan An , Chi-Wang Yoon , Tae-Jeong Oh , Dae-Kyung Yoon , Sun-Woo Lee , Myung-Soon Kim , Suk-Kyung Woo , Keun Ha Kim
IPC分类号： C12Q1/68 , C12P21/06 , C12P19/34
CPC分类号： C12Q1/708 , B01J2219/00378 , B01J2219/00387 , B01J2219/00497 , B01J2219/00527 , B01J2219/00576 , B01J2219/00585 , B01J2219/00596 , B01J2219/00605 , B01J2219/00612 , B01J2219/00659 , B01J2219/00677 , B01J2219/00722 , C12Q1/6806 , C12Q1/6837 , C12Q2565/519 , C12Q2545/113 , C12Q2525/197
摘要： The present invention relates to a method for producing a DNA chip, which comprises the steps of: (a) cloning a probe, where a linker is coupled to one or both ends of an oligonucleotide to be integrated on a slide, into a vector; (b) transforming host cells with the vector; (c) culturing the transformed host cells, to recover the probe where the linker is coupled to one or both ends of the oligonucleotides; and (d) integrating the recovered double-helical probes on a slide. Also, the present invention relates to a DNA chip for HPV diagnosis produced by the method, and a method for diagnosing the presence or genotype of HPV using the DNA chip.
摘要翻译：本发明涉及一种DNA芯片的制造方法，其特征在于，包括以下步骤：（a）将接头与寡聚核苷酸的一端或两端偶合以载置于载体上的探针的克隆; （b）用载体转化宿主细胞; （c）培养转化的宿主细胞，以回收探针，其中接头与寡核苷酸的一端或两端偶联; 和（d）将回收的双螺旋探针整合在载玻片上。此外，本发明涉及通过该方法产生的用于HPV诊断的DNA芯片，以及使用DNA芯片诊断HPV的存在或基因型的方法。

2. 发明申请

US20070224605A1 Method for Preparing a Dna Chip and Use Thereof 有权
标题翻译：制备Dna芯片的方法及其应用
公开(公告)号：US20070224605A1
公开(公告)日：2007-09-27
申请号：US11578634
申请日：2004-04-19
申请人： Sung-Whan An , Chi-Wang Yoon , Tae-Jeong Oh , Dae-Kyung Yoon , Sun-Woo Lee , Myung-Soon Kim , Suk-Kyung Woo , Keun Kim
发明人： Sung-Whan An , Chi-Wang Yoon , Tae-Jeong Oh , Dae-Kyung Yoon , Sun-Woo Lee , Myung-Soon Kim , Suk-Kyung Woo , Keun Kim
IPC分类号： C12Q1/68
CPC分类号： C12Q1/708 , B01J2219/00378 , B01J2219/00387 , B01J2219/00497 , B01J2219/00527 , B01J2219/00576 , B01J2219/00585 , B01J2219/00596 , B01J2219/00605 , B01J2219/00612 , B01J2219/00659 , B01J2219/00677 , B01J2219/00722 , C12Q1/6806 , C12Q1/6837 , C12Q2565/519 , C12Q2545/113 , C12Q2525/197
摘要： The present invention relates to a method for producing a DNA chip, which comprises the steps of: (a) cloning a probe, where a linker is coupled to one or both ends of an oligonucleotide to be integrated on a slide, into a vector; (b) transforming host cells with the vector; (c) culturing the transformed host cells, to recover the probe where the linker is coupled to one or both ends of the oligonucleotides; and (d) integrating the recovered double-helical probes on a slide. Also, the present invention relates to a DNA chip for HPV diagnosis produced by the method, and a method for diagnosing the presence or genotype of HPV using the DNA chip.
摘要翻译：本发明涉及一种DNA芯片的制造方法，其特征在于，包括以下步骤：（a）将接头与寡聚核苷酸的一端或两端偶合以载置于载体上的探针的克隆; （b）用载体转化宿主细胞; （c）培养转化的宿主细胞，以回收探针，其中接头与寡核苷酸的一端或两端偶联; 和（d）将回收的双螺旋探针整合在载玻片上。此外，本发明涉及通过该方法产生的用于HPV诊断的DNA芯片，以及使用DNA芯片诊断HPV的存在或基因型的方法。

3. 发明授权

US08007875B2 Method of forming a carbon nano-tube 有权
标题翻译：形成碳纳米管的方法
公开(公告)号：US08007875B2
公开(公告)日：2011-08-30
申请号：US11832601
申请日：2007-08-01
申请人： Hong-Sik Yoon , Young-Moon Choi , Sun-Woo Lee
发明人： Hong-Sik Yoon , Young-Moon Choi , Sun-Woo Lee
IPC分类号： H05H1/24
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/162 , Y10S977/742
摘要： In a method of forming carbon nano-tubes, a catalytic film is formed on a substrate. The catalytic film is then transformed into preliminary catalytic particles. Thereafter, the preliminary catalytic particles are transformed into catalytic particles. Carbon nano-tubes then grow from the catalytic particles. The carbon nano-tubes have relatively high conductivity and high number density.
摘要翻译：在形成碳纳米管的方法中，在基板上形成催化膜。然后将催化膜转化成预催化颗粒。此后，将预催化剂颗粒转化成催化剂颗粒。碳纳米管然后从催化颗粒生长。碳纳米管具有较高的导电性和高密度。

4. 发明申请

US20090271982A1 Method of forming a wiring having carbon nanotube 有权
标题翻译：形成具有碳纳米管的布线的方法
公开(公告)号：US20090271982A1
公开(公告)日：2009-11-05
申请号：US12387299
申请日：2009-04-29
申请人： Sun-Woo Lee , Seong-Ho Moon , Dong-Woo Kim , Jung-Hyeon Kim , Hong-Sik Yoon
发明人： Sun-Woo Lee , Seong-Ho Moon , Dong-Woo Kim , Jung-Hyeon Kim , Hong-Sik Yoon
IPC分类号： H05K3/10
CPC分类号： H01L21/76879 , H01L21/76849 , H01L23/5252 , H01L23/53276 , H01L2221/1094 , H01L2924/0002 , Y10T29/49117 , Y10T29/4913 , Y10T29/49155 , H01L2924/00
摘要： In a method of forming a wiring having a carbon nanotube, a lower wiring is formed on a substrate, and a catalyst layer is formed on the lower wiring. An insulating interlayer is formed on the substrate to cover the catalyst layer, and an opening is formed through the insulating interlayer to expose an upper face of the catalyst layer. A carbon nanotube wiring is formed in the opening, and an upper wiring is formed on the carbon nanotube wiring and the insulating interlayer to be electrically connected to the carbon nanotube wiring. A thermal stress is generated between the carbon nanotube wiring and the upper wiring to produce a dielectric breakdown of a native oxide layer formed on a surface of the carbon nanotube wiring. A wiring having a reduced electrical resistance between the carbon nanotube wiring and the upper wiring may be obtained.
摘要翻译：在形成具有碳纳米管的布线的方法中，在基板上形成下布线，并且在下布线上形成催化剂层。在衬底上形成绝缘中间层以覆盖催化剂层，并且通过绝缘中间层形成开口以暴露催化剂层的上表面。在开口部形成有碳纳米管布线，在碳纳米管布线和绝缘中间层上形成上部配线，与碳纳米管配线电连接。在碳纳米管布线和上布线之间产生热应力，以产生形成在碳纳米管布线表面上的天然氧化物层的电介质击穿。可以获得碳纳米管布线和上布线之间的电阻降低的布线。

5. 发明申请

US20080157363A1 Method of forming the nanoscale conductive structure and a semiconductor device formed thereby 失效
标题翻译：形成纳米级导电结构的方法和由此形成的半导体器件
公开(公告)号：US20080157363A1
公开(公告)日：2008-07-03
申请号：US11785164
申请日：2007-04-16
申请人： Subramanya Mayya Kolake , Sun-Woo Lee , In-Seok Yeo
发明人： Subramanya Mayya Kolake , Sun-Woo Lee , In-Seok Yeo
IPC分类号： H01L23/48 , B05D5/12
CPC分类号： H01L23/5226 , H01L21/288 , H01L21/76831 , H01L21/76876 , H01L21/76879 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a nanoscale structure includes providing a substrate having a first layer thereon, the first layer having an opening that exposes a region of the substrate, and contacting the substrate with a catalytic material, wherein the exposed region of the substrate has a first property that attracts the catalytic material, and the first layer has a second property that repels the catalytic material.
摘要翻译：形成纳米尺度结构的方法包括提供其上具有第一层的衬底，第一层具有暴露衬底的区域的开口，以及使衬底与催化材料接触，其中衬底的暴露区域具有第一吸附催化材料的性质，第一层具有排斥催化材料的第二性质。

6. 发明申请

US20070123019A1 METHODS OF FORMING CARBON NANOTUBES IN A WIRING PATTERN AND RELATED DEVICES 审中-公开
标题翻译：在配线图案和相关设备中形成碳纳米管的方法
公开(公告)号：US20070123019A1
公开(公告)日：2007-05-31
申请号：US11470369
申请日：2006-09-06
申请人： Seung-Hyun Lim , Sun-Woo Lee , In-Seok Yeo
发明人： Seung-Hyun Lim , Sun-Woo Lee , In-Seok Yeo
IPC分类号： H01L21/44
CPC分类号： H01L21/76802 , H01L21/76876 , H01L21/76879 , H01L2221/1094
摘要： A method of forming a carbon nanotube includes forming a cavity between a substrate and a first layer on the substrate. The cavity extends in a wiring pattern and includes a metal catalyst pattern in the cavity. The carbon nanotube is formed from the metal catalyst pattern and extends inside the cavity along the wiring pattern. Related methods and devices are also discussed.
摘要翻译：形成碳纳米管的方法包括在基板和基板上的第一层之间形成空腔。空腔以布线图案延伸，并且在空腔中包括金属催化剂图案。碳纳米管由金属催化剂图案形成，并沿着布线图案在腔内延伸。还讨论了相关的方法和设备。

7. 发明授权

US07982318B2 Device including contact structure and method of forming the same 失效
标题翻译：包括接触结构的装置及其形成方法
公开(公告)号：US07982318B2
公开(公告)日：2011-07-19
申请号：US11655116
申请日：2007-01-19
申请人： Jang-Eun Heo , Young-Moon Choi , Sun-Woo Lee , Hong-Sik Yoon , Kyung-Rae Byun
发明人： Jang-Eun Heo , Young-Moon Choi , Sun-Woo Lee , Hong-Sik Yoon , Kyung-Rae Byun
IPC分类号： H01L23/52 , H01L23/48 , H01L29/40
CPC分类号： H01L21/76843 , H01L21/31116 , H01L21/3212 , H01L21/76823 , H01L21/76825 , H01L21/76831 , H01L21/76867 , H01L21/76876 , H01L21/76879 , H01L23/53276 , H01L2221/1094 , H01L2924/0002 , Y10S977/742 , H01L2924/00
摘要： A device includes an insulating layer on a substrate having a lower conductive pattern, the insulating layer having a contact hole that penetrates the insulating layer and exposes a portion of the lower conductive pattern, a catalytic pattern having a first portion on the exposed portion of the lower conductive pattern and a second portion on a sidewall of the contact hole, a spacer on the sidewall of the contact hole, wherein the second portion of the catalytic pattern is disposed between the spacer and the sidewall, and a contact plug in the contact hole and contacting the catalytic pattern, the contact plug being a carbon nanotube material.
摘要翻译：一种器件包括在具有下导电图案的衬底上的绝缘层，所述绝缘层具有穿透绝缘层并暴露一部分下导电图案的接触孔，催化图案具有第一部分在暴露部分上下导电图案和接触孔的侧壁上的第二部分，在接触孔的侧壁上的间隔件，其中催化剂图案的第二部分设置在间隔件和侧壁之间，接触插塞在接触孔中并使催化剂图案接触，所述接触塞是碳纳米管材料。

8. 发明授权

US07659624B2 Semiconductor device having a nanoscale conductive structure 失效
标题翻译：具有纳米级导电结构的半导体器件
公开(公告)号：US07659624B2
公开(公告)日：2010-02-09
申请号：US11785164
申请日：2007-04-16
申请人： Subramanya Mayya Kolake , Sun-Woo Lee , In-Seok Yeo
发明人： Subramanya Mayya Kolake , Sun-Woo Lee , In-Seok Yeo
IPC分类号： H01L23/48 , B05D5/12 , H01L29/76 , H01L29/94 , H01L31/00
CPC分类号： H01L23/5226 , H01L21/288 , H01L21/76831 , H01L21/76876 , H01L21/76879 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a substrate, an insulating layer having an opening, the opening exposing a portion of the substrate, a hydrophobic layer covering substantially only a sidewall and a top surface of the insulating layer, and a nanoscale conductive structure on the exposed portion of the substrate.
摘要翻译：半导体器件包括衬底，具有开口的绝缘层，暴露衬底的一部分的开口，基本上仅覆盖绝缘层的侧壁和顶表面的疏水层，以及在绝缘层的暴露部分上的纳米级导电结构底物。

9. 发明申请

US20070096616A1 Vertical interconnection structure including carbon nanotubes and method of fabricating the same 审中-公开
标题翻译：包括碳纳米管的垂直互连结构及其制造方法
公开(公告)号：US20070096616A1
公开(公告)日：2007-05-03
申请号：US11544918
申请日：2006-10-10
申请人： In-Taek Han , Ha-Jin Kim , Sun-Woo Lee
发明人： In-Taek Han , Ha-Jin Kim , Sun-Woo Lee
IPC分类号： H01J1/02
CPC分类号： H01L21/76879 , H01L21/76852 , H01L21/76855 , H01L23/485 , H01L23/53276 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： Provided are a vertical interconnection structure including carbon nanotubes and a method of fabricating the same. The vertical interconnection structure includes a substrate; a lower electrode formed on the substrate; a catalyst layer formed on the lower electrode; an inactivated catalyst layer covering the lower electrode and having a first hole exposing the catalyst layer; an insulating layer which is formed on the inert catalyst layer and has a second hole connected to the first hole; a plurality of carbon nanotubes grown from an exposed area of the catalyst layer by the first hole; an upper electrode on the insulating layer being electrically connected to the carbon nanotubes, the inactivated catalyst layer is formed through a thermal reaction between the catalyst layer covering the lower electrode except for the catalyst layer in the first hole and a passivation layer having a third hole corresponding to the second hole.
摘要翻译：提供了包括碳纳米管的垂直互连结构及其制造方法。垂直互连结构包括基板; 形成在所述基板上的下电极; 形成在下电极上的催化剂层; 钝化催化剂层，其覆盖所述下电极并具有暴露所述催化剂层的第一孔; 绝缘层，其形成在所述惰性催化剂层上并且具有连接到所述第一孔的第二孔; 由所述第一孔从所述催化剂层的暴露区域生长的多个碳纳米管; 绝缘层上的上电极与碳纳米管电连接，除了第一孔中的催化剂层之外的覆盖下电极的催化剂层和具有第三孔的钝化层之间的热反应形成失活的催化剂层对应于第二个孔。

10. 发明申请

US20120064692A1 METHODS OF MANUFACTURING A MEMORY DEVICE HAVING A CARBON NANOTUBE 审中-公开
标题翻译：制造具有碳纳米管的存储器件的方法
公开(公告)号：US20120064692A1
公开(公告)日：2012-03-15
申请号：US13235079
申请日：2011-09-16
申请人： Seong-Ho MOON , Hong-Sik Yoon , Subramanya Mayya , Sun-Woo Lee , Dong-Woo Kim , Xiaofeng Wang
发明人： Seong-Ho MOON , Hong-Sik Yoon , Subramanya Mayya , Sun-Woo Lee , Dong-Woo Kim , Xiaofeng Wang
IPC分类号： H01L21/20 , B82Y40/00
CPC分类号： H01L27/1021 , B82Y10/00 , G11C13/025 , G11C23/00 , G11C2213/16 , H01L51/0048 , H01L51/057 , H01L51/0579
摘要： A method of manufacturing a memory device having a carbon nanotube can be provided by forming a lower electrode on a substrate and forming an insulating interlayer on the lower electrode. An upper electrode including a diode can be formed on the insulating interlayer, where the upper electrode can have a first void exposing a sidewall of the diode and a portion of the insulating interlayer. A portion of the insulating interlayer can be partially removed to form an insulating interlayer pattern having a second void that exposes a portion of the lower electrode, where the second void can be connected with the first void. A carbon nanotube wiring can be formed from the lower electrode through the second and first voids, where the carbon nanotube wiring may be capable of being electrically connected with the diode of the upper electrode by a voltage applied to the lower electrode.
摘要翻译：可以通过在基板上形成下电极并在下电极上形成绝缘中间层来提供制造具有碳纳米管的存储器件的方法。可以在绝缘中间层上形成包括二极管的上电极，其中上电极可以具有暴露二极管的侧壁和绝缘中间层的一部分的第一空隙。绝缘中间层的一部分可以被部分去除以形成具有暴露下部电极的一部分的第二空隙的绝缘层间图案，其中第二空隙可与第一空隙连接。碳纳米管布线可以由下电极通过第二和第一空隙形成，其中碳纳米管布线可以通过施加到下电极的电压与上电极的二极管电连接。

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