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    • 2. 发明授权
    • Schottky barrier FinFET device and fabrication method thereof
    • 肖特基势垒FinFET器件及其制造方法
    • US07723762B2
    • 2010-05-25
    • US11598374
    • 2006-11-13
    • Sung-Min KimEun-Jung YunDong-Won Kim
    • Sung-Min KimEun-Jung YunDong-Won Kim
    • H01L29/76
    • H01L29/41791H01L29/66795H01L29/7839H01L29/78618H01L29/78684
    • A Schottky barrier FinFET device and a method of fabricating the same are provided. The device includes a lower fin body provided on a substrate. An upper fin body having first and second sidewalls which extend upwardly from a center of the lower fin body and face each other is provided. A gate structure crossing over the upper fin body and covering an upper surface of the upper fin body and the first and second sidewalls is provided. The Schottky barrier FinFET device includes a source and a drain which are formed on the sidewalls of the upper fin body adjacent to sidewalls of the gate structure and made of a metal material layer formed on an upper surface of the lower fin body positioned at both sides of the upper fin body, and the source and drain form a Schottky barrier to the lower and upper fin bodies.
    • 提供肖特基势垒FinFET器件及其制造方法。 该装置包括设置在基板上的下部翅片体。 提供具有从下翅片体的中心向上延伸并彼此面对的第一和第二侧壁的上翅片本体。 提供了一种跨越上翅片体并覆盖上翅片体的上表面和第一和第二侧壁的门结构。 肖特基势垒FinFET器件包括源极和漏极,其形成在与鳍结构的侧壁相邻的上翅片体的侧壁上,并且由形成在位于两侧的下翅片体的上表面上的金属材料层 并且源极和漏极对下鳍体和上鳍体形成肖特基势垒。
    • 4. 发明申请
    • SCHOTTKY BARRIER FiNFET DEVICE AND FABRICATION METHOD THEREOF
    • 肖特基屏障器件及其制造方法
    • US20100197099A1
    • 2010-08-05
    • US12759290
    • 2010-04-13
    • Sung-Min KimEun-Jung YunDong-Won Kim
    • Sung-Min KimEun-Jung YunDong-Won Kim
    • H01L21/336
    • H01L29/41791H01L29/66795H01L29/7839H01L29/78618H01L29/78684
    • A Schottky barrier FinFET device and a method of fabricating the same are provided. The device includes a lower fin body provided on a substrate. An upper fin body having first and second sidewalls which extend upwardly from a center of the lower fin body and face each other is provided. A gate structure crossing over the upper fin body and covering an upper surface of the upper fin body and the first and second sidewalls is provided. The Schottky barrier FinFET device includes a source and a drain which are formed on the sidewalls of the upper fin body adjacent to sidewalls of the gate structure and made of a metal material layer formed on an upper surface of the lower fin body positioned at both sides of the upper fin body, and the source and drain form a Schottky barrier to the lower and upper fin bodies.
    • 提供肖特基势垒FinFET器件及其制造方法。 该装置包括设置在基板上的下部翅片体。 提供具有从下翅片体的中心向上延伸并彼此面对的第一和第二侧壁的上翅片本体。 提供了一种跨越上翅片体并覆盖上翅片体的上表面和第一和第二侧壁的门结构。 肖特基势垒FinFET器件包括源极和漏极,其形成在与鳍结构的侧壁相邻的上翅片体的侧壁上,并且由形成在位于两侧的下翅片体的上表面上的金属材料层 并且源极和漏极对下鳍体和上鳍体形成肖特基势垒。