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    • 4. 发明授权
    • Method of manufacturing a flash memory device having compensation members formed on edge portions of a tunnel oxide layer
    • 制造具有形成在隧道氧化物层的边缘部分上的补偿部件的闪存装置的方法
    • US07608509B2
    • 2009-10-27
    • US11494439
    • 2006-07-27
    • Chul-Sung KimYu-Gyun ShinBon-Young KooSung-Kweon BaekYoung-Jin Noh
    • Chul-Sung KimYu-Gyun ShinBon-Young KooSung-Kweon BaekYoung-Jin Noh
    • H01L21/336H01L29/788
    • H01L29/7881H01L27/115H01L27/11521H01L29/42336
    • In a semiconductor device and a method of manufacturing the semiconductor device, preliminary isolation regions having protruded upper portions are formed on a substrate to define an active region. After an insulation layer is formed on the active region, a first conductive layer is formed on the insulation layer. The protruded upper portions of the preliminary isolation regions are removed to form isolation regions on the substrate and to expose sidewalls of the first conductive layer, and compensation members are formed on edge portions of the insulation layer. The compensation members may complement the edge portions of the insulation layer that have thicknesses substantially thinner than that of a center portion of the insulation layer, and may prevent deterioration of the insulation layer. Furthermore, the first conductive layer having a width substantially greater than that of the active region may enhance a coupling ratio of the semiconductor device. Thus, the semiconductor device may have improved electrical characteristics and reliability.
    • 在半导体器件和半导体器件的制造方法中,在衬底上形成具有突出的上部的预备隔离区以限定有源区。 在有源区上形成绝缘层之后,在绝缘层上形成第一导电层。 去除预分离区域的突出的上部,以在衬底上形成隔离区域并暴露第一导电层的侧壁,并且补偿构件形成在绝缘层的边缘部分上。 补偿构件可以补充绝缘层的边缘部分,该边缘部分的厚度基本上比绝缘层的中心部分的厚度更薄,并且可以防止绝缘层的劣化。 此外,具有基本上大于有源区的宽度的第一导电层可以增强半导体器件的耦合比。 因此,半导体器件可以具有改善的电特性和可靠性。
    • 5. 发明申请
    • OXIDATION/HEAT TREATMENT METHODS OF MANUFACTURING NON-VOLATILE MEMORY DEVICES
    • 制造非易失性存储器件的氧化/热处理方法
    • US20080085584A1
    • 2008-04-10
    • US11857824
    • 2007-09-19
    • Young-Jin NohChul-Sung KimSi-Young ChoiBon-Young KooKi-Hyun HwangSung-Kweon Baek
    • Young-Jin NohChul-Sung KimSi-Young ChoiBon-Young KooKi-Hyun HwangSung-Kweon Baek
    • H01L21/336
    • H01L21/28247H01L29/40114
    • Methods of manufacturing non-volatile memory devices are disclosed which may at least partially cure etch damage and may at least partially remove defect sites in gate structures of the devices caused during manufacturing of the devices. An exemplary method of manufacturing a non-volatile memory device includes forming a gate structure on a substrate, the gate structure including a control gate electrode, a blocking layer pattern, a floating gate electrode, and a tunnel insulating layer pattern. An oxidation process is performed that at least partially cures damage caused to the substrate and to the gate structure during formation of the gate structure. A first heat treatment is performed under a gas atmosphere including nitrogen to at least partially remove defect sites on the gate structure caused by the oxidation process. A second heat treatment is performed under a gas atmosphere including chlorine to at least partially remove remaining defect sites on the gate structure caused by the oxidation process.
    • 公开了制造非易失性存储器件的方法,其可以至少部分地固化蚀刻损伤,并且可以至少部分地去除在器件的制造期间引起的器件的栅极结构中的缺陷位置。 制造非易失性存储器件的示例性方法包括在衬底上形成栅极结构,栅极结构包括控制栅电极,阻挡层图案,浮栅电极和隧道绝缘层图案。 进行氧化处理,其至少部分地固化在栅极结构形成期间对衬底和栅极结构的损伤。 在包括氮气的气体气氛下进行第一热处理,以至少部分地去除由氧化过程引起的栅极结构上的缺陷部位。 在包括氯的气体气氛下进行第二热处理,以至少部分地去除由氧化过程引起的栅极结构上的剩余缺陷部位。
    • 8. 发明申请
    • Semiconductor device and method of manufacturing the same
    • 半导体装置及其制造方法
    • US20070023821A1
    • 2007-02-01
    • US11494439
    • 2006-07-27
    • Chul-Sung KimYu-Gyun ShinBon-Young KooSung-Kweon BaekYoung-Jin Noh
    • Chul-Sung KimYu-Gyun ShinBon-Young KooSung-Kweon BaekYoung-Jin Noh
    • H01L29/788
    • H01L29/7881H01L27/115H01L27/11521H01L29/42336
    • In a semiconductor device and a method of manufacturing the semiconductor device, preliminary isolation regions having protruded upper portions are formed on a substrate to define an active region. After an insulation layer is formed on the active region, a first conductive layer is formed on the insulation layer. The protruded upper portions of the preliminary isolation regions are removed to form isolation regions on the substrate and to expose sidewalls of the first conductive layer, and compensation members are formed on edge portions of the insulation layer. The compensation members may complement the edge portions of the insulation layer that have thicknesses substantially thinner than that of a center portion of the insulation layer, and may prevent deterioration of the insulation layer. Furthermore, the first conductive layer having a width substantially greater than that of the active region may enhance a coupling ratio of the semiconductor device. Thus, the semiconductor device may have improved electrical characteristics and reliability.
    • 在半导体器件和半导体器件的制造方法中,在衬底上形成具有突出的上部的预备隔离区以限定有源区。 在有源区上形成绝缘层之后,在绝缘层上形成第一导电层。 去除预分离区域的突出的上部,以在衬底上形成隔离区域并暴露第一导电层的侧壁,并且补偿构件形成在绝缘层的边缘部分上。 补偿构件可以补充绝缘层的边缘部分,该边缘部分的厚度基本上比绝缘层的中心部分的厚度更薄,并且可以防止绝缘层的劣化。 此外,具有基本上大于有源区的宽度的第一导电层可以增强半导体器件的耦合比。 因此,半导体器件可以具有改善的电特性和可靠性。