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    • 2. 发明申请
    • SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY SYSTEM FOR COMPENSATING CROSSTALK
    • 用于补偿CROSSTALK的半导体存储器件和半导体存储器系统
    • US20090190421A1
    • 2009-07-30
    • US12355421
    • 2009-01-16
    • Sung-Joo PARKJae-Jun LEE
    • Sung-Joo PARKJae-Jun LEE
    • G11C7/00
    • G11C7/02G11C7/1048G11C7/12G11C29/02G11C29/025
    • A semiconductor memory device and a semiconductor memory system. The semiconductor memory device includes channels configured to transmit signals from a transmitter to a receiver, and a crosstalk compensator. The crosstalk compensator may be connected between the channels to compensate for crosstalk. The crosstalk compensator may comprise a capacitor connected in parallel between the channels, and a switching unit connected between the capacitor and one of the channels. The switching unit may control connections or disconnections between the capacitor and the channel. Therefore, the semiconductor memory device and the semiconductor memory system compensate for crosstalk occurring between transmitted signals that are out of phase with each other.
    • 半导体存储器件和半导体存储器系统。 半导体存储器件包括被配置为将信号从发送器发送到接收器的通道和串扰补偿器。 串扰补偿器可以连接在通道之间以补偿串扰。 串扰补偿器可以包括在通道之间并联连接的电容器,以及连接在电容器和其中一个通道之间的开关单元。 开关单元可以控制电容器和通道之间的连接或断开。 因此,半导体存储器件和半导体存储器系统补偿在彼此不同相位的发射信号之间发生的串扰。