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    • 1. 发明申请
    • NONVOLATILE MEMORY DEVICE FOR REDUCING INTERFERENCE BETWEEN WORD LINES AND OPERATION METHOD THEREOF
    • 用于减少字线之间的干扰的非易失性存储器件及其操作方法
    • US20110222339A1
    • 2011-09-15
    • US13044683
    • 2011-03-10
    • Sung-Hoon KimJai-Hyuk SongYong-Joon Choi
    • Sung-Hoon KimJai-Hyuk SongYong-Joon Choi
    • G11C16/28G11C16/10G11C16/08
    • G11C16/3418G11C16/10G11C16/28
    • Provided are a nonvolatile memory device and a method of operating the same. The nonvolatile memory device in accordance with an embodiment of the inventive concept may include a string select line; a ground select line; a dummy word line adjacent to the ground select line; a first word line adjacent to the dummy word line; and a second word line disposed between the string select line and the first word line. The nonvolatile memory device is configured to apply a voltage to the dummy word line. When programming a memory cell connected to the first word line, a first dummy word line voltage lower than a voltage applied to the second word line is applied to the dummy word line. When programming a memory cell connected to the second word line, a second dummy word line voltage between a voltage applied to the first word line and the first dummy word line voltage is applied to the dummy word line. Accordingly, when a program operation is performed, a charge loss of a memory cell connected to a word line adjacent to a dummy word line can be reduced by changing a voltage applied to the dummy word line according to a select word line.
    • 提供一种非易失性存储器件及其操作方法。 根据本发明构思的实施例的非易失性存储器件可以包括串选择线; 地选线; 与地面选择线相邻的虚拟字线; 与虚拟字线相邻的第一字线; 以及设置在所述串选择线和所述第一字线之间的第二字线。 非易失性存储器件被配置为向虚拟字线施加电压。 当编程连接到第一字线的存储单元时,低于施加到第二字线的电压的第一虚拟字线电压被施加到虚拟字线。 当编程连接到第二字线的存储单元时,施加到第一字线的电压和第一虚拟字线电压之间的第二虚拟字线电压被施加到伪字线。 因此,当执行编程操作时,可以通过根据选择字线改变施加到虚拟字线的电压来减少连接到与虚拟字线相邻的字线的存储单元的电荷损失。
    • 2. 发明授权
    • Nonvolatile memory device for reducing interference between word lines and operation method thereof
    • 用于减少字线之间的干扰的非易失性存储器件及其操作方法
    • US08488386B2
    • 2013-07-16
    • US13044683
    • 2011-03-10
    • Sung-Hoon KimJai-Hyuk SongYong-Joon Choi
    • Sung-Hoon KimJai-Hyuk SongYong-Joon Choi
    • G11C11/34
    • G11C16/3418G11C16/10G11C16/28
    • Provided are a nonvolatile memory device and a method of operating the same. The nonvolatile memory device in accordance with an embodiment of the inventive concept may include a string select line; a ground select line; a dummy word line adjacent to the ground select line; a first word line adjacent to the dummy word line; and a second word line disposed between the string select line and the first word line. The nonvolatile memory device is configured to apply a voltage to the dummy word line. When programming a memory cell connected to the first word line, a first dummy word line voltage lower than a voltage applied to the second word line is applied to the dummy word line. When programming a memory cell connected to the second word line, a second dummy word line voltage between a voltage applied to the first word line and the first dummy word line voltage is applied to the dummy word line. Accordingly, when a program operation is performed, a charge loss of a memory cell connected to a word line adjacent to a dummy word line can be reduced by changing a voltage applied to the dummy word line according to a select word line.
    • 提供一种非易失性存储器件及其操作方法。 根据本发明构思的实施例的非易失性存储器件可以包括串选择线; 地选线; 与地面选择线相邻的虚拟字线; 与虚拟字线相邻的第一字线; 以及设置在所述串选择线和所述第一字线之间的第二字线。 非易失性存储器件被配置为向虚拟字线施加电压。 当编程连接到第一字线的存储单元时,低于施加到第二字线的电压的第一虚拟字线电压被施加到虚拟字线。 当编程连接到第二字线的存储单元时,施加到第一字线的电压和第一虚拟字线电压之间的第二虚拟字线电压被施加到伪字线。 因此,当执行编程操作时,可以通过根据选择字线改变施加到虚拟字线的电压来减少连接到与虚拟字线相邻的字线的存储单元的电荷损失。
    • 10. 发明授权
    • Liquid crystal display and manufacturing method thereof
    • 液晶显示及其制造方法
    • US08659734B2
    • 2014-02-25
    • US13215907
    • 2011-08-23
    • Sung-Hoon KimYoon-Sung UmJoo-Seok Yeom
    • Sung-Hoon KimYoon-Sung UmJoo-Seok Yeom
    • G02F1/1343G02F1/1333
    • G02F1/136209G02F1/133345G02F1/134363G02F1/136227G02F2001/134372H01L27/1288
    • A liquid crystal display, including: a first substrate and a second substrate; a liquid crystal layer; a first data line disposed on the first substrate; a pixel electrode disposed on the first substrate; and a common electrode disposed on the first substrate and overlapping at least a portion of the pixel electrode and the first data line. One of the pixel electrode and the common electrode includes a plurality of branch electrodes spaced apart from each other and the other of has an at least approximately planar shape that is substantially parallel to a surface of at least one of the first substrate and the second substrate. The display can also include a passivation layer having a dielectric constant of about 3.5 or less, and including a first portion disposed between the common electrode and the first data line.
    • 一种液晶显示器,包括:第一基板和第二基板; 液晶层; 设置在第一基板上的第一数据线; 设置在所述第一基板上的像素电极; 以及公共电极,设置在所述第一基板上并与所述像素电极和所述第一数据线的至少一部分重叠。 像素电极和公共电极中的一个包括彼此间隔开的多个分支电极,另一个具有基本上平行于第一基板和第二基板中的至少一个的表面的至少近似平面的形状 。 显示器还可以包括具有约3.5或更小介电常数的钝化层,并且包括设置在公共电极和第一数据线之间的第一部分。