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1. 发明授权

US07615449B2 Semiconductor device having a recess channel transistor 失效
标题翻译：具有凹槽通道晶体管的半导体器件
公开(公告)号：US07615449B2
公开(公告)日：2009-11-10
申请号：US11529420
申请日：2006-09-29
申请人： Sung Woong Chung , Sang Don Lee
发明人： Sung Woong Chung , Sang Don Lee
IPC分类号： H01L29/94 , H01L29/78
CPC分类号： H01L29/66621 , H01L27/10876
摘要： The semiconductor device having a recess channel transistor includes a device isolation structure formed in a semiconductor substrate to define an active region having a recess region at a lower part of sidewalls thereof and a recess channel region formed in the semiconductor substrate under the active region. A method for fabricating the semiconductor device includes forming a device isolation structure in a semiconductor substrate to form an active region having a recess region at a lower part of sidewalls thereof, a gate insulating film formed over the semiconductor substrate including the recess channel region, and a gate electrode formed over the gate insulating film to fill up the recess channel region.
摘要翻译：具有凹陷沟道晶体管的半导体器件包括形成在半导体衬底中的器件隔离结构，以限定其侧壁下部具有凹陷区域的有源区域和在有源区域下形成在半导体衬底中的凹槽沟道区域。一种制造半导体器件的方法包括：在半导体衬底中形成器件隔离结构，以形成在其侧壁的下部具有凹陷区域的有源区，形成在包括凹槽沟道区域的半导体衬底上的栅极绝缘膜，以及形成在所述栅极绝缘膜上方以填充所述凹陷沟道区域的栅电极。

2. 发明申请

US20070252199A1 Semiconductor device having a recess channel transistor 失效
标题翻译：具有凹槽通道晶体管的半导体器件
公开(公告)号：US20070252199A1
公开(公告)日：2007-11-01
申请号：US11529420
申请日：2006-09-29
申请人： Sung Woong Chung , Sang Don Lee
发明人： Sung Woong Chung , Sang Don Lee
IPC分类号： H01L29/94
CPC分类号： H01L29/66621 , H01L27/10876
摘要： The semiconductor device having a recess channel transistor includes a device isolation structure formed in a semiconductor substrate to define an active region having a recess region at a lower part of sidewalls thereof and a recess channel region formed in the semiconductor substrate under the active region. A method for fabricating the semiconductor device includes forming a device isolation structure in a semiconductor substrate to form an active region having a recess region at a lower part of sidewalls thereof, a gate insulating film formed over the semiconductor substrate including the recess channel region, and a gate electrode formed over the gate insulating film to fill up the recess channel region.
摘要翻译：具有凹陷沟道晶体管的半导体器件包括形成在半导体衬底中的器件隔离结构，以限定其侧壁下部具有凹陷区域的有源区域和在有源区域下形成在半导体衬底中的凹槽沟道区域。一种制造半导体器件的方法包括：在半导体衬底中形成器件隔离结构，以形成在其侧壁的下部具有凹陷区域的有源区，形成在包括凹槽沟道区域的半导体衬底上的栅极绝缘膜，以及形成在所述栅极绝缘膜上方以填充所述凹陷沟道区域的栅电极。

3. 发明授权

US07960761B2 Semiconductor device having a recess channel transistor 有权
标题翻译：具有凹槽通道晶体管的半导体器件
公开(公告)号：US07960761B2
公开(公告)日：2011-06-14
申请号：US12615210
申请日：2009-11-09
申请人： Sung Woong Chung , Sang Don Lee
发明人： Sung Woong Chung , Sang Don Lee
IPC分类号： H01L29/78 , H01L29/94
CPC分类号： H01L29/66621 , H01L27/10876
摘要： The semiconductor device having a recess channel transistor includes a device isolation structure formed in a semiconductor substrate to define an active region having a recess region at a lower part of sidewalls thereof and a recess channel region formed in the semiconductor substrate under the active region. A method for fabricating the semiconductor device includes forming a device isolation structure in a semiconductor substrate to form an active region having a recess region at a lower part of sidewalls thereof, a gate insulating film formed over the semiconductor substrate including the recess channel region, and a gate electrode formed over the gate insulating film to fill up the recess channel region.
摘要翻译：具有凹陷沟道晶体管的半导体器件包括形成在半导体衬底中的器件隔离结构，以限定其侧壁下部具有凹陷区域的有源区域和在有源区域下形成在半导体衬底中的凹槽沟道区域。一种制造半导体器件的方法包括：在半导体衬底中形成器件隔离结构，以形成在其侧壁的下部具有凹陷区域的有源区，形成在包括凹槽沟道区域的半导体衬底上的栅极绝缘膜，以及形成在所述栅极绝缘膜上方以填充所述凹陷沟道区域的栅电极。

4. 发明申请

US20090173992A1 SEMICONDUCTOR DEVICE WITH IMPROVED PERFORMANCE CHARACTERISTICS 有权
标题翻译：具有改进性能特性的半导体器件
公开(公告)号：US20090173992A1
公开(公告)日：2009-07-09
申请号：US12323391
申请日：2008-11-25
申请人： Sang Don Lee , Sung Woong Chung
发明人： Sang Don Lee , Sung Woong Chung
IPC分类号： H01L29/78
CPC分类号： H01L29/66795 , H01L21/823437 , H01L29/4236 , H01L29/66621 , H01L29/7851
摘要： The semiconductor device includes an active region, a recess, a Fin channel region, a gate insulating film, and a gate electrode. The active region is defined by a device isolation structure formed in a semiconductor substrate. The recess is formed by etching the active region and its neighboring device isolation structure using an island shaped recess gate mask as an etching mask. The Fin channel region is formed on the semiconductor substrate at a lower part of the recess. The gate insulating film is formed over the active region including the Fin channel region and the recess. The gate electrode is formed over the gate insulating film to fill up the Fin channel region and the recess.
摘要翻译：半导体器件包括有源区，凹槽，Fin沟道区，栅极绝缘膜和栅电极。有源区由半导体衬底中形成的器件隔离结构限定。通过使用岛状凹陷栅极掩模作为蚀刻掩模来蚀刻有源区及其邻近的器件隔离结构来形成凹部。鳍状沟道区在凹部的下部形成在半导体衬底上。栅极绝缘膜形成在包括鳍状沟道区域和凹部的有源区域上。栅电极形成在栅极绝缘膜上，以填充鳍沟道区域和凹槽。

5. 发明授权

US08110871B2 Semiconductor device with recess and fin structure 有权
标题翻译：具有凹槽和鳍结构的半导体器件
公开(公告)号：US08110871B2
公开(公告)日：2012-02-07
申请号：US12323391
申请日：2008-11-25
申请人： Sang Don Lee , Sung Woong Chung
发明人： Sang Don Lee , Sung Woong Chung
IPC分类号： H01L29/78
CPC分类号： H01L29/66795 , H01L21/823437 , H01L29/4236 , H01L29/66621 , H01L29/7851
摘要： The semiconductor device includes an active region, a recess, a Fin channel region, a gate insulating film, and a gate electrode. The active region is defined by a device isolation structure formed in a semiconductor substrate. The recess is formed by etching the active region and its neighboring device isolation structure using an island shaped recess gate mask as an etching mask. The Fin channel region is formed on the semiconductor substrate at a lower part of the recess. The gate insulating film is formed over the active region including the Fin channel region and the recess. The gate electrode is formed over the gate insulating film to fill up the Fin channel region and the recess.
摘要翻译：半导体器件包括有源区，凹槽，Fin沟道区，栅极绝缘膜和栅电极。有源区由半导体衬底中形成的器件隔离结构限定。通过使用岛状凹陷栅极掩模作为蚀刻掩模来蚀刻有源区及其邻近的器件隔离结构来形成凹部。鳍状沟道区在凹部的下部形成在半导体衬底上。栅极绝缘膜形成在包括鳍状沟道区域和凹部的有源区域上。栅电极形成在栅极绝缘膜上，以填充鳍沟道区域和凹槽。

6. 发明授权

US07692251B2 Transistor for semiconductor device and method of forming the same 失效
标题翻译：用于半导体器件的晶体管及其形成方法
公开(公告)号：US07692251B2
公开(公告)日：2010-04-06
申请号：US11284957
申请日：2005-11-23
申请人： Sung Woong Chung , Sang Don Lee
发明人： Sung Woong Chung , Sang Don Lee
IPC分类号： H01L29/76 , H01L29/94 , H01L31/00
CPC分类号： H01L21/823437 , H01L21/823412 , H01L21/823481 , H01L29/66818 , H01L29/7851 , H01L29/7853 , Y10S257/903
摘要： Disclosed herein is a transistor for a semiconductor device and a method of forming the same. According to the present invention, a novel transistor structure combining a plane channel transistor and a fin-type channel transistor formed on the semiconductor substrate is provided to secure a sufficient channel width as compared to that of the plane channel transistor, thereby satisfying drive current regulated for the transistor.
摘要翻译：本文公开了一种用于半导体器件的晶体管及其形成方法。根据本发明，提供组合平面沟道晶体管和形成在半导体衬底上的鳍型沟道晶体管的新型晶体管结构，以确保与平面沟道晶体管相比足够的沟道宽度，由此满足驱动电流调节用于晶体管。

7. 发明申请

US20100022057A1 METHOD FOR FORMING A SEMICONDUCTOR DEVICE HAVING A FIN CHANNEL TRANSISTOR 审中-公开
标题翻译：用于形成具有FIN通道晶体管的半导体器件的方法
公开(公告)号：US20100022057A1
公开(公告)日：2010-01-28
申请号：US12569802
申请日：2009-09-29
申请人： Sung Woong Chung , Sang Don Lee
发明人： Sung Woong Chung , Sang Don Lee
IPC分类号： H01L21/762 , H01L21/8242 , H01L21/28
CPC分类号： H01L29/7851 , H01L27/10826 , H01L27/10873 , H01L27/10879 , H01L29/0653 , H01L29/66795
摘要： The semiconductor device includes a device isolation structure formed in a semiconductor substrate to define an active region having a recess region at a lower part of sidewalls thereof. The semiconductor device additionally has a fin channel region protruded over the device isolation structure in a longitudinal direction of a gate region; a gate insulating film formed over the semiconductor substrate including the protruded fin channel region; and a gate electrode formed over the gate insulating film to fill up the protruded fin channel region.
摘要翻译：半导体器件包括形成在半导体衬底中的器件隔离结构，以限定在其侧壁的下部具有凹陷区域的有源区。半导体器件还具有在栅极区域的纵向方向上在器件隔离结构上突出的鳍状沟道区域; 形成在所述半导体衬底上的栅极绝缘膜，所述栅极绝缘膜包括所述突出的鳍状沟道区域; 以及形成在所述栅极绝缘膜上方以填充所述突出的鳍状沟道区域的栅电极。

8. 发明申请

US20090001458A1 SEMICONDUCTOR DEVICE WITH SUBSTANTIAL DRIVING CURRENT AND DECREASED JUNCTION LEAKAGE CURRENT 失效
标题翻译：具有主要驱动电流和降低的接点泄漏电流的半导体器件
公开(公告)号：US20090001458A1
公开(公告)日：2009-01-01
申请号：US12202012
申请日：2008-08-29
申请人： Sung Woong Chung , Sang Don Lee
发明人： Sung Woong Chung , Sang Don Lee
IPC分类号： H01L29/78
CPC分类号： H01L29/78642 , H01L29/42376 , H01L29/66621
摘要： The semiconductor device includes an active region, a stepped recess channel region including vertical channel structures, a gate insulating film, and a gate structure. The active region is defined by a device isolation structure formed in a semiconductor substrate. The stepped recess channel region is formed in the active region. The vertical silicon-on-insulator (SOI) channel structures are disposed at sidewalls of both device isolation structures in a longitudinal direction of a gate region. The gate insulating film is disposed over the active region including the stepped recess channel region. The gate structure is disposed over the stepped recess channel region of the gate region.
摘要翻译：半导体器件包括有源区，包括垂直沟道结构的阶梯形凹槽沟道区，栅极绝缘膜和栅极结构。有源区由半导体衬底中形成的器件隔离结构限定。在有源区域中形成阶梯状凹槽沟道区域。垂直绝缘体上硅（SOI）通道结构在栅极区域的纵向方向上设置在两个器件隔离结构的侧壁处。栅极绝缘膜设置在包括阶梯式凹槽沟道区域的有源区域之上。栅极结构设置在栅极区域的阶梯状凹槽沟道区域的上方。

9. 发明授权

US07432162B2 Semiconductor device with substantial driving current and decreased junction leakage current 失效
标题翻译：半导体器件具有实质的驱动电流和降低的结漏电流
公开(公告)号：US07432162B2
公开(公告)日：2008-10-07
申请号：US11480866
申请日：2006-07-06
申请人： Sung Woong Chung , Sang Don Lee
发明人： Sung Woong Chung , Sang Don Lee
IPC分类号： H01L21/336
CPC分类号： H01L29/78642 , H01L29/42376 , H01L29/66621
摘要： The semiconductor device includes an active region, a stepped recess channel region including vertical channel structures, a gate insulating film, and a gate structure. The active region is defined by a device isolation structure formed in a semiconductor substrate. The stepped recess channel region is formed in the active region. The vertical silicon-on-insulator (SOI) channel structures are disposed at sidewalls of both device isolation structures in a longitudinal direction of a gate region. The gate insulating film is disposed over the active region including the stepped recess channel region. The gate structure is disposed over the stepped recess channel region of the gate region.
摘要翻译：半导体器件包括有源区，包括垂直沟道结构的阶梯形凹槽沟道区，栅极绝缘膜和栅极结构。有源区由半导体衬底中形成的器件隔离结构限定。在有源区域中形成阶梯状凹槽沟道区域。垂直绝缘体上硅（SOI）通道结构在栅极区域的纵向方向上设置在两个器件隔离结构的侧壁处。栅极绝缘膜设置在包括阶梯式凹槽沟道区域的有源区域之上。栅极结构设置在栅极区域的阶梯状凹槽沟道区域的上方。

10. 发明申请

US20070252198A1 Semiconductor device having a fin channel transistor 审中-公开
标题翻译：具有鳍状沟道晶体管的半导体器件
公开(公告)号：US20070252198A1
公开(公告)日：2007-11-01
申请号：US11529355
申请日：2006-09-29
申请人： Sung Woong Chung , Sang Don Lee
发明人： Sung Woong Chung , Sang Don Lee
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7851 , H01L27/10826 , H01L27/10873 , H01L27/10879 , H01L29/0653 , H01L29/66795
摘要： The semiconductor device includes a device isolation structure formed in a semiconductor substrate to define an active region having a recess region at a lower part of sidewalls thereof. The semiconductor device additionally has a fin channel region protruded over the device isolation structure in a longitudinal direction of a gate region; a gate insulating film formed over the semiconductor substrate including the protruded fin channel region; and a gate electrode formed over the gate insulating film to fill up the protruded fin channel region.
摘要翻译：半导体器件包括形成在半导体衬底中的器件隔离结构，以限定在其侧壁的下部具有凹陷区域的有源区。半导体器件还具有在栅极区域的纵向方向上在器件隔离结构上突出的鳍状沟道区域; 形成在所述半导体衬底上的栅极绝缘膜，所述栅极绝缘膜包括所述突出的鳍状沟道区域; 以及形成在所述栅极绝缘膜上方以填充所述突出的鳍状沟道区域的栅电极。

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