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    • 5. 发明授权
    • Apparatus for detecting an exciting force externally exerted on a
vibrating gyroscope
    • 用于检测外部施加在振动陀螺仪上的激励力的装置
    • US6076402A
    • 2000-06-20
    • US104730
    • 1998-06-25
    • Jun Ho OhSung Wook Park
    • Jun Ho OhSung Wook Park
    • G01C19/00G01C19/5642G01P9/04
    • G01C19/5642
    • A detector detects an exciting force externally exerted on a vibrating gyroscope by measuring a cross vibration of a regular triangular prism-shaped vibrating body having piezoelectric elements. The detector comprises an oscillator for oscillating the vibrating body at a constant frequency, a differential amplifier for differentially amplifying the piezoelectric voltages from two of the piezoelectric elements, a rectifier for rectifying an alternating current signal from the differential amplifier based on the oscillating phase of the oscillator, a direct current amplifier for amplifying a direct current signal from the rectifier, a controller for controlling output from the direct current amplifier, two operators for operating the oscillating signals from the oscillator with the signals supplied from the controller, and switches for switching on and off the output-lines of the two operators so that the piezoelectric signal supplied to the amplifier becomes a periodic linear signal.
    • 检测器通过测量具有压电元件的规则三角形棱柱形振动体的交叉振动来检测外部施加在振动陀螺仪上的激励力。 检测器包括用于以恒定频率振荡振动体的振荡器,用于从两个压电元件差分放大压电电压的差分放大器,用于基于振荡相位对来自差分放大器的交流信号进行整流的整流器 振荡器,用于放大来自整流器的直流信号的直流放大器,用于控制来自直流放大器的输出的控制器,用于使用从控制器提供的信号来操作来自振荡器的振荡信号的两个操作器,以及用于接通的开关 并且关闭两个操作器的输出线,使得提供给放大器的压电信号变为周期性线性信号。
    • 6. 发明授权
    • Method for fabricating a MOS transistor
    • MOS晶体管的制造方法
    • US5773310A
    • 1998-06-30
    • US504172
    • 1995-07-19
    • Sung Wook Park
    • Sung Wook Park
    • H01L21/336H01L21/768H01L21/8242H01L27/108H01L29/417H01L21/335
    • H01L27/10873H01L27/10808H01L29/41775H01L29/66545H01L29/66606H01L21/76895H01L29/66553
    • A transistor fabricated by a characteristic method which comprises forming a source/drain region prior to the formation of a gate electrode and then, forming source/drain pads which are in contact with the source/drain and insulated from the gate electrode, comprising a MOSFET structure in which two identical conductors are a predetermined distance away from each other on a semiconductor substrate beneath each of which a source/drain diffusion region is formed in electrical connection with it and between which a gate oxide film is formed on the semiconductor substrate, and a gate electrode extends over the two separated connectors while being insulated therefrom. It secures enough mask alignment allowance and is widely applied not only to transistors but also to DRAMs or SRAMs.
    • 一种通过特征方法制造的晶体管,包括在形成栅极电极之前形成源极/漏极区域,然后形成与源极/漏极接触并与栅电极绝缘的源极/漏极焊盘,其包括MOSFET 其中两个相同的导体在半导体衬底上彼此隔开预定距离的结构,每个半导体衬底上形成有与其电连接的源/漏扩散区,并且在半导体衬底上形成栅极氧化膜,并且 栅电极在两个分离的连接器之间延伸,同时被绝缘。 它确保了足够的掩模对准余量,并且不仅广泛应用于晶体管,而且广泛应用于DRAM或SRAM。
    • 8. 发明授权
    • Repairing fuse for semiconductor device and method for fabricating the same
    • 半导体器件修理熔丝及其制造方法
    • US06255144B1
    • 2001-07-03
    • US09327617
    • 1999-06-08
    • Bae Keun JeonMyeung Sik ChangChoon Sik OhSung Wook Park
    • Bae Keun JeonMyeung Sik ChangChoon Sik OhSung Wook Park
    • H01L2182
    • H01L23/5258H01L2924/0002H01L2924/00
    • Disclosed is a repairing fuse for semiconductor devices and fabrication therefor. The repairing fuse has a first conducting film and a plurality of second conducting films wherein the first conducting film and the second conducting films are initially disconnected and mutually connected upon illumination of a laser beam so as to repair the semiconductor devices. In a contact hole which has a lower part narrower than its upper part, the first conducting film is formed having a connection to a bottom wire layer atop a semiconductor substrate. The contact hole is formed in an interlayer insulating film deposited on the wire layer. The second conducting films are disconnected with each other, each having an end point at a predetermined part on the slant wall the upper part of the contact hole. This novel fuse concept eliminates conventional problems, bringing a significant improvement into the simplification and yield of a repairing process.
    • 公开了半导体器件的修理熔丝及其制造方法。 修理保险丝具有第一导电膜和多个第二导电膜,其中第一导电膜和第二导电膜最初在激光束照射时被断开并相互连接,从而修复半导体器件。 在具有比其上部更窄的下部的接触孔中,形成具有与半导体衬底顶部的底部线层的连接的第一导电膜。 接触孔形成在沉积在导线层上的层间绝缘膜中。 第二导电膜彼此断开,每个端部在倾斜壁上的预定部分处具有接触孔的上部。 这种新颖的保险丝概念消除了常规问题,从而显着提高了修复过程的简化和产量。