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    • 5. 发明申请
    • Nitride semiconductor light emitting device
    • 氮化物半导体发光器件
    • US20060192223A1
    • 2006-08-31
    • US11313515
    • 2005-12-21
    • Sung LeeWoong HwangSeog ChoiHo ParkSang ChoiChang Lim
    • Sung LeeWoong HwangSeog ChoiHo ParkSang ChoiChang Lim
    • H01L33/00
    • H01L33/38H01L33/20H01L2224/16225
    • The invention relates to a flip-chip nitride semiconductor LED. In the LED, a light emitting structure has first and second conductivity type nitride semiconductor layers and an active layer interposed therebetween. Each of plurality of first and second electrodes has a bonding pad placed adjacent to a top corner of the light emitting structure and at least one electrode finger extended from the bonding pad. The first and second electrodes are connected to the first and second conductivity type nitride semiconductor layers, respectively. Also, bonding pads are arranged alternately along edges of the light emitting structure with different polarity, in a substantially symmetric configuration with respect to the center of the light emitting structure. In addition, each of electrode fingers is extended from a corresponding pad and bent at least once toward the center of the light emitting structure to adjoin the electrode finger having different polarity.
    • 本发明涉及倒装芯片氮化物半导体LED。 在LED中,发光结构具有第一和第二导电型氮化物半导体层和插入其间的有源层。 多个第一和第二电极中的每一个具有与发光结构的顶角相邻放置的接合焊盘和从接合焊盘延伸的至少一个电极指。 第一和第二电极分别连接到第一和第二导电型氮化物半导体层。 此外,接合焊盘以相对于发光结构的中心的基本对称的配置,以不同的极性交替地布置在发光结构的边缘处。 此外,每个电极指从对应的垫延伸并且朝着发光结构的中心弯曲至少一次,以与具有不同极性的电极指相邻。