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    • 2. 发明申请
    • Near-field optical probe based on SOI substrate and fabrication method thereof
    • 基于SOI衬底的近场光探针及其制造方法
    • US20070128854A1
    • 2007-06-07
    • US11633820
    • 2006-12-05
    • Eunkyoung KimSung LeeKang Park
    • Eunkyoung KimSung LeeKang Park
    • H01L21/4763
    • G01Q60/22Y10S977/873Y10S977/875Y10S977/878
    • Provided is near-field optical probe including: a cantilever arm support portion that is formed of a lower silicon layer of a silicon-on-insulator (SOI) substrate, the cantilever arm support portion having a through hole formed therein at a side of the lower silicon layer; and a cantilever arm forming of a junction oxidation layer pattern and an upper silicon layer pattern on the SOI substrate that are supported on an upper surface of the lower silicon layer and each have a smaller hole than the through hole, a silicon oxidation layer pattern having a tip including an aperture at a vertical end, corresponding with the hole on the upper silicon layer pattern, and an optical transmission prevention layer that is formed on the silicon oxidation layer pattern and does not cover the aperture.
    • 本发明提供的近场光学探针包括:由绝缘体上硅(SOI)衬底的下硅层形成的悬臂支撑部,所述悬臂臂支撑部在其一侧形成有通孔, 下硅层; 以及形成在所述SOI衬底上的结氧化层图案和上硅层图案的悬臂,所述支撑在所述下硅层的上表面上并且具有比所述通孔更小的孔,硅氧化层图案具有 对应于上硅层图案上的孔的垂直端的开孔,以及形成在硅氧化层图案上并且不覆盖该孔的防透光层。
    • 5. 发明授权
    • Near-field optical probe based on SOI substrate and fabrication method thereof
    • 基于SOI衬底的近场光探针及其制造方法
    • US07871530B2
    • 2011-01-18
    • US12465765
    • 2009-05-14
    • Eunkyoung KimSung Q LeeKang Ho Park
    • Eunkyoung KimSung Q LeeKang Ho Park
    • H01L21/306
    • G01Q60/22Y10S977/873Y10S977/875Y10S977/878
    • Provided is near-field optical probe including: a cantilever arm support portion that is formed of a lower silicon layer of a silicon-on-insulator (SOI) substrate, the cantilever arm support portion having a through hole formed therein at a side of the lower silicon layer; and a cantilever arm forming of a junction oxidation layer pattern and an upper silicon layer pattern on the SOI substrate that are supported on an upper surface of the lower silicon layer and each have a smaller hole than the through hole, a silicon oxidation layer pattern having a tip including an aperture at a vertical end, corresponding with the hole on the upper silicon layer pattern, and an optical transmission prevention layer that is formed on the silicon oxidation layer pattern and does not cover the aperture.
    • 本发明提供的近场光学探针包括:由绝缘体上硅(SOI)衬底的下硅层形成的悬臂支撑部,所述悬臂臂支撑部在其一侧形成有通孔, 下硅层; 以及形成在所述SOI衬底上的结氧化层图案和上硅层图案的悬臂,所述支撑在所述下硅层的上表面上并且具有比所述通孔更小的孔,硅氧化层图案具有 对应于上硅层图案上的孔的垂直端的开孔,以及形成在硅氧化层图案上并且不覆盖该孔的防透光层。