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    • 6. 发明授权
    • Compact optical logic operator array
    • 紧凑型光逻辑运算器阵列
    • US5770851A
    • 1998-06-23
    • US713535
    • 1996-09-13
    • Hyo-Hoon ParkKwang-Joon KimKyung-Sook HyunO-Kyun KwonSeok-Ho SongByueng-Su YooHye-Yong Chu
    • Hyo-Hoon ParkKwang-Joon KimKyung-Sook HyunO-Kyun KwonSeok-Ho SongByueng-Su YooHye-Yong Chu
    • G02B6/43G02F3/02H01J40/14
    • G02F3/028G02B6/43
    • An improved parallel optical logic operator provides a path for light to pass through substrates in which a light source and an optical logic device are arranged. An optical logic device operates by transmission of light forwarded to a predetermined direction. This increases integration efficiency of the system by eliminating optical parts for changing the light path. A unit chip includes a laser array for generating a predetermined light in accordance with an electrical signal for a logic process, a laser array substrate on which via holes are formed for passing light, a microlens array for converting the light beam emitted from each laser device of the laser array into a parallel light beam for passing through the via hole, and an optical logic circuit array formed with a combination of an S-SEED which performs a logic function by transmission of the light signal through an optical window in S-SEED. A plurality of unit chips are laminated so that the light emitted from the laser device of one of the unit chips passes through an optical logic circuit of a corresponding unit chip and can be made incident on the optical logic circuit in the next unit chip through a via hole.
    • 改进的并行光逻辑运算器提供光通过其中布置光源和光逻辑器件的衬底的路径。 光逻辑器件通过传输转发到预定方向的光来操作。 这通过消除用于改变光路的光学部件来提高系统的集成效率。 单元芯片包括用于根据用于逻辑处理的电信号产生预定光的激光阵列,其上形成有用于通过光的通孔的激光阵列基板,用于转换从每个激光装置发射的光束的微透镜阵列 的激光器阵列的平行光束通过通孔;以及光学逻辑电路阵列,其形成有S-SEED的组合,S-SEED通过S-SEED中的光学窗口传输光信号来执行逻辑功能 。 多个单位芯片被层叠,使得从单个芯片之一的激光装置发射的光通过相应的单元芯片的光学逻辑电路,并且可以通过一个单元芯片入射到下一个单元芯片中的光学逻辑电路上 通孔。
    • 7. 发明授权
    • Optical controlled resonant tunneling diode
    • 光控谐振隧道二极管
    • US5939729A
    • 1999-08-17
    • US976776
    • 1997-11-24
    • Hye Yong ChuKyu-Suk LeeByueng-Su YooHyo-Hoon Park
    • Hye Yong ChuKyu-Suk LeeByueng-Su YooHyo-Hoon Park
    • H01S3/00H01L31/0352H01L31/103H01L29/06
    • B82Y20/00H01L31/035236H01L31/1035
    • The present invention relates to a semiconductor photoelectric device including a InAs layer formed to monoatomic thickness sandwiched between spacer layers adjacent to an emitter to maximize a difference in energy between two quantum states in accumulation layer of a resonant tunneling diode having a double barrier structure, resulting in separating the resonant tunneling current determined by two quantum states of the triangular well in accumulation layer of resonant tunneling diode, even when light of a low intensity is irradiated to the surface of the resonant tunneling diode. Thus, there is provided an optical controlled resonant tunneling diode, making it possible to manufacturing a switching device for controlling an electric signal using light source by adjusting, using light, the resonant tunneling determined by an excited state of the triangular well.
    • 本发明涉及一种半导体光电器件,其包括形成为单原子厚度的InAs层,夹在与发射极相邻的间隔层之间,以使具有双重屏障结构的谐振隧道二极管的累积层中的两个量子态之间的能量差最大化,从而产生 在谐振隧道二极管的累积层中分离由三角形阱的两个量子态确定的谐振隧穿电流,即使当低强度的光照射到谐振隧穿二极管的表面时。 因此,提供了一种光控谐振隧道二极管,使得可以通过使用光调节由三角形阱的激发状态确定的谐振隧穿来制造用于使用光源控制电信号的开关装置。