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1. 发明授权

US08969883B2 Semiconductor light device and fabrication method thereof 有权
标题翻译：半导体光器件及其制造方法
公开(公告)号：US08969883B2
公开(公告)日：2015-03-03
申请号：US10534489
申请日：2003-11-17
申请人： Sung Ho Choo , Ja Soon Jang
发明人： Sung Ho Choo , Ja Soon Jang
IPC分类号： H01L33/30 , H01L33/40 , H01L33/32
CPC分类号： H01L33/40 , H01L33/32 , Y10S257/918
摘要： The present invention discloses a light device and a fabrication method thereof. An object of the present invention is to provide the light device and the fabrication method thereof an electric/thermal/structural stability is obtained, and a P-type electrode and an N-type electrode can be simultaneously formed. In order to achieve the above object, the inventive light device includes: a GaN-based layer; a high concentration GaN-based layer formed on the GaN-based layer; a first metal-Ga compound layer formed on the high concentration GaN-based layer; a first metal layer formed on the first metal-Ga compound layer; a third metal-Al compound layer formed on the first metal layer; and a conductive oxidation preventive layer formed on the third metal-Al compound layer.
摘要翻译：本发明公开了一种灯装置及其制造方法。本发明的一个目的是提供一种光学器件及其制造方法，可以获得电/热/结构稳定性，并且可以同时形成P型电极和N型电极。为了实现上述目的，本发明的光器件包括：GaN基层; 形成在GaN基层上的高浓度GaN基层; 形成在高浓度GaN基层上的第一金属-Ga化合物层; 形成在第一金属-Ga化合物层上的第一金属层; 形成在第一金属层上的第三金属-Al化合物层; 以及形成在第三金属-Al化合物层上的导电氧化防止层。

2. 发明申请

US20100237384A1 LIGHT DEVICE AND FABRICATION METHOD THEREOF 有权
标题翻译：光装置及其制造方法
公开(公告)号：US20100237384A1
公开(公告)日：2010-09-23
申请号：US12790394
申请日：2010-05-28
申请人： Sung Ho Choo , Ja Soon Jang
发明人： Sung Ho Choo , Ja Soon Jang
IPC分类号： H01L33/30
CPC分类号： H01L33/40 , H01L33/32 , Y10S257/918
摘要： The present invention discloses a light device and a fabrication method thereof. An object of the present invention is to provide the light device and the fabrication method thereof an electric/thermal/structural stability is obtained, and a P-type electrode and an N-type electrode can be simultaneously formed. In order to achieve the above object, the inventive light device includes: a GaN-based layer; a high concentration GaN-based layer formed on the GaN-based layer; a first metal-Ga compound layer formed on the high concentration GaN-based layer; a first metal layer formed on the first metal-Ga compound layer; a third metal-Al compound layer formed on the first metal layer; and a conductive oxidation preventive layer formed on the third metal-Al compound layer.
摘要翻译：本发明公开了一种灯装置及其制造方法。本发明的一个目的是提供一种光学器件及其制造方法，可以获得电/热/结构稳定性，并且可以同时形成P型电极和N型电极。为了实现上述目的，本发明的光器件包括：GaN基层; 形成在GaN基层上的高浓度GaN基层; 形成在高浓度GaN基层上的第一金属-Ga化合物层; 形成在第一金属-Ga化合物层上的第一金属层; 形成在第一金属层上的第三金属-Al化合物层; 以及形成在第三金属-Al化合物层上的导电氧化防止层。

3. 发明申请

US20070029568A1 Light emitting device and fabrication method thereof 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US20070029568A1
公开(公告)日：2007-02-08
申请号：US10534489
申请日：2003-11-17
申请人： Sung Ho Choo , Ja Soon Jang
发明人： Sung Ho Choo , Ja Soon Jang
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/32 , Y10S257/918
摘要： The present invention discloses a light device and the fabrication method thereof. An object of the present invention is to provide the light device and the fabrication method thereof an electric/thermal/structural stability is obtained, and a P-type electrode and an N-type electrode can be simultaneously formed. In order to achieve the above object, the inventive light device includes: a GaN-based layer; a high concentration GaN-based layer formed on the GaN-based layer; a first metal-Ga compound layer formed on the high concentration GaN-based layer; a first metal layer formed on the first metal-Ga compound layer; a third metal-Al compound layer formed on the first metal layer; and a conductive oxidation preventive layer formed on the third metal-Al compound layer.
摘要翻译：本发明公开了一种光装置及其制造方法。本发明的一个目的是提供一种光学器件及其制造方法，可以获得电/热/结构稳定性，并且可以同时形成P型电极和N型电极。为了实现上述目的，本发明的光器件包括：GaN基层; 形成在GaN基层上的高浓度GaN基层; 形成在高浓度GaN基层上的第一金属-Ga化合物层; 形成在第一金属-Ga化合物层上的第一金属层; 形成在第一金属层上的第三金属-Al化合物层; 以及形成在第三金属-Al化合物层上的导电氧化防止层。

4. 发明授权

US08143643B2 Light device and fabrication method thereof 有权
标题翻译：光装置及其制造方法
公开(公告)号：US08143643B2
公开(公告)日：2012-03-27
申请号：US12790394
申请日：2010-05-28
申请人： Sung Ho Choo , Ja Soon Jang
发明人： Sung Ho Choo , Ja Soon Jang
IPC分类号： H01L33/30
CPC分类号： H01L33/40 , H01L33/32 , Y10S257/918
摘要： The present invention discloses a light device and a fabrication method thereof. An object of the present invention is to provide the light device and the fabrication method thereof an electric/thermal/structural stability is obtained, and a P-type electrode and an N-type electrode can be simultaneously formed. In order to achieve the above object, the inventive light device includes: a GaN-based layer; a high concentration GaN-based layer formed on the GaN-based layer; a first metal-Ga compound layer formed on the high concentration GaN-based layer; a first metal layer formed on the first metal-Ga compound layer; a third metal-Al compound layer formed on the first metal layer; and a conductive oxidation preventive layer formed on the third metal-Al compound layer.
摘要翻译：本发明公开了一种灯装置及其制造方法。本发明的一个目的是提供一种光学器件及其制造方法，可以获得电/热/结构稳定性，并且可以同时形成P型电极和N型电极。为了实现上述目的，本发明的光器件包括：GaN基层; 形成在GaN基层上的高浓度GaN基层; 形成在高浓度GaN基层上的第一金属-Ga化合物层; 形成在第一金属-Ga化合物层上的第一金属层; 形成在第一金属层上的第三金属-Al化合物层; 以及形成在第三金属-Al化合物层上的导电氧化防止层。

5. 发明授权

US06326294B1 Method of fabricating an ohmic metal electrode for use in nitride compound semiconductor devices 有权
标题翻译：制造用于氮化物化合物半导体器件的欧姆金属电极的方法
公开(公告)号：US06326294B1
公开(公告)日：2001-12-04
申请号：US09840171
申请日：2001-04-24
申请人： Ja Soon Jang , Tae Yeon Seong , Seong Ju Park
发明人： Ja Soon Jang , Tae Yeon Seong , Seong Ju Park
IPC分类号： H01L2128
CPC分类号： H01L33/40 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L33/32 , H01S5/0425 , H01S5/32341
摘要： A method of fabricating on ohmic metal electrode. The p-type ohmic metal electrode according to the present invention employs Ru and RuOx as the cover layer in lieu of conventional Au, in order to effectively prevent penetration by contaminants in the air, such as oxygen, carbon, and H2O, and to form a stable metal-Ga intermetallic phase at the junction between the contact layer and the nitride compound semiconductor. The n-type ohmic metal electrode according to the present invention employs Ru as the diffusion barrier in lieu of conventional Ni or Pt, in order to effectively form a metal-nitride phase such as titanium nitride that contributes to superior ohmic characteristics during the heating process, without destruction of the junction. According to the present invention, it is possible to fabricate devices having superior electrical, optical, and thermal characteristics compared with conventional devices.
摘要翻译：一种在欧姆金属电极上制造的方法。根据本发明的p型欧姆金属电极使用Ru和RuOx作为覆盖层代替常规Au，以便有效地防止空气中的污染物如氧，碳和H 2 O的渗透，并形成在接触层和氮化物半导体之间的接合处的稳定的金属-Ga金属间相。根据本发明的n型欧姆金属电极，为了有效地形成在加热过程中有助于优异的欧姆特性的诸如氮化钛的金属氮化物相，使用Ru作为常规的Ni或Pt的扩散阻挡层，不破坏交界处。根据本发明，与常规装置相比，可以制造具有优异的电，光和热特性的装置。

6. 发明授权

US07751110B2 Versatile display device 有权
标题翻译：多功能显示设备
公开(公告)号：US07751110B2
公开(公告)日：2010-07-06
申请号：US11720223
申请日：2005-07-06
申请人： Ja Soon Jang , Hyun Hwi Lee , Sung Jin Son
发明人： Ja Soon Jang , Hyun Hwi Lee , Sung Jin Son
IPC分类号： G02F1/15 , G02F1/153
CPC分类号： G02F1/15 , G02F1/133385 , G02F1/133512 , G02F1/133603 , G02F2202/22
摘要： There is provided a versatile display device comprising: a first electrode layer formed on a transparent substrate; an electrochromic layer formed on the first electrode layer; a second electrode layer consisting of a plurality of first conductive line groups arranged in the first direction on the electrochromic layer; a light-emitting device layer formed on the second electrode layer and emitting light; and a third electrode layer formed on the light-emitting device layer and consisting of a plurality of second conductive line groups arranged in the second direction that is different from the first conductive line group.
摘要翻译：提供了一种通用的显示装置，包括：形成在透明基板上的第一电极层; 形成在第一电极层上的电致变色层; 第二电极层，由在电致变色层上沿第一方向布置的多个第一导电线组构成; 形成在第二电极层上并发光的发光器件层; 以及第三电极层，形成在发光器件层上，并且由与第一导电线组不同的第二方向排列的多个第二导电线组构成。

7. 发明授权

US06169297A Metal thin film with ohmic contact for light emit diodes 有权
标题翻译：金属薄膜与欧姆接触发光二极管
公开(公告)号：US06169297A
公开(公告)日：2001-01-02
申请号：US09213735
申请日：1998-12-17
申请人： Ja Soon Jang , Hyo Keun Kim , Seong Ju Park , Tae Yeon Seong , Heung Kyu Jang
发明人： Ja Soon Jang , Hyo Keun Kim , Seong Ju Park , Tae Yeon Seong , Heung Kyu Jang
IPC分类号： H01L3300
CPC分类号： H01L33/40 , H01L33/32
摘要： A metal thin film with an ohmic contact for light emit diodes and a method of producing such a film are disclosed. The metal thin film has a p-type gallium nitride (GaN) semiconductor layer. Nickel (Ni), platinum (Pt) and gold (Au) layers are deposited on the GaN semiconductor layer in a way such that the gold layer forms a top layer, with either one of the platinum and nickel layers being selectively used as an inter-diffusion barrier between metal layers. The inter-diffusion barrier may be formed by depositing platinum between the nickel and gold layers, thus forming an Ni/Pt/Au metal thin film, or formed by depositing nickel between the platinum and gold layers, thus forming an Pt/Ni/Au metal thin film. In the method, a GaN semiconductor is washed so as to be free from carbide and oxide layers. The Ni, Pt and Au layers are formed on the GaN semiconductor layer through a vacuum deposition process at 5×10−5-2×10−1 torr. The GaN semiconductor, having the metal thin film, is heat treated for 30 seconds-3 hours and at 250-1,000° C., and under nitrogen or argon ambient.
摘要翻译：公开了一种用于发光二极管的欧姆接触的金属薄膜及其制造方法。金属薄膜具有p型氮化镓（GaN）半导体层。镍（Ni），铂（Pt）和金（Au）层以这样的方式沉积在GaN半导体层上，使得金层形成顶层，铂层和镍层中的任一层选择性地用作间隙金属层之间的扩散屏障。互扩散势垒可以通过在镍层和金层之间沉积铂而形成，从而形成Ni / Pt / Au金属薄膜，或者通过在铂层和金层之间沉积镍形成，从而形成Pt / Ni / Au 金属薄膜。在该方法中，洗涤GaN半导体以便不含碳化物和氧化物层。 Ni，Pt和Au层通过真空沉积工艺在5×10 -5 -2×10 -1乇上形成在GaN半导体层上。具有金属薄膜的GaN半导体在氮气或氩气环境下进行热处理30秒-3小时和250-1,000℃。

8. 发明授权

US06294016B1 Method for manufacturing p-type GaN based thin film using nitridation 有权
标题翻译：使用氮化制造p型GaN基薄膜的方法
公开(公告)号：US06294016B1
公开(公告)日：2001-09-25
申请号：US09421028
申请日：1999-10-20
申请人： Sang Woo Kim , Ji Myon Lee , Kwang Soon Ahn , Rae Man Park , Ja Soon Jang , Seong Ju Park
发明人： Sang Woo Kim , Ji Myon Lee , Kwang Soon Ahn , Rae Man Park , Ja Soon Jang , Seong Ju Park
IPC分类号： C30B110
CPC分类号： C30B25/02 , C30B29/403 , C30B29/406 , H01L21/3245 , H01L33/007 , H01L33/0095
摘要： Disclosed is a method for manufacturing a high conductivity p-type GaN-based thin film superior in electrical and optical properties by use of nitridation and RTA (rapid thermal annealing) in combination. A GaN-based epitaxial layer is grown to a desired thickness while being doped with Mg dopant with a carrier gas of hydrogen by use of a MOCVD process. The film thus obtained is subjected to nitridation using nitrogen plasma and RTA in combination. The p-type GaN-based thin film exhibits high hole concentration as well as low resistivity, so that it can be used where high electrical, optical, thermal and structural properties are needed. The method finds application in the fabrication of blue/white LEDs, laser diodes and other electronic devices.
摘要翻译：公开了通过组合使用氮化和RTA（快速热退火）制造电性和光学性能优异的高导电性p型GaN基薄膜的方法。通过使用MOCVD法，将GaN基外延层生长至期望的厚度，同时用氢气载体用Mg掺杂剂掺杂。将这样得到的膜用氮等离子体和RTA组合进行氮化。 p型GaN基薄膜具有高的空穴浓度以及低电阻率，因此可以在需要高电，光，热和结构性能的情况下使用。该方法可用于制造蓝/白LED，激光二极管和其他电子设备。

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