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1. 发明授权

US08372669B2 Semiconductor light emitting device having patterned substrate and manufacturing method of the same 有权
标题翻译：具有图案化衬底的半导体发光器件及其制造方法
公开(公告)号：US08372669B2
公开(公告)日：2013-02-12
申请号：US13176712
申请日：2011-07-05
申请人： Sun Woon Kim , Hyun Kyung Kim , Hyung Ky Back , Jae Ho Han
发明人： Sun Woon Kim , Hyun Kyung Kim , Hyung Ky Back , Jae Ho Han
IPC分类号： H01L21/00
CPC分类号： H01L33/22 , H01L33/12 , H01L2933/0083
摘要： There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions.
摘要翻译：提供了具有图案化衬底的半导体发光器件及其制造方法。半导体发光器件包括衬底; 在基板上依次形成第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层，其中，在其表面上设置有具有多个凸部的图案，其中，图案的凸部，第一凸部与相邻的凸部之间的距离与第二凸部与相邻的凸部之间的距离不同。

2. 发明授权

US07999272B2 Semiconductor light emitting device having patterned substrate 有权
标题翻译：具有图案化衬底的半导体发光器件
公开(公告)号：US07999272B2
公开(公告)日：2011-08-16
申请号：US12273512
申请日：2008-11-18
申请人： Sun Woon Kim , Hyun Kyung Kim , Hyung Ky Back , Jae Ho Han
发明人： Sun Woon Kim , Hyun Kyung Kim , Hyung Ky Back , Jae Ho Han
IPC分类号： H01L29/22 , H01L33/00 , H01L29/24 , H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L33/22 , H01L33/12 , H01L2933/0083
摘要： There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions.
摘要翻译：提供了具有图案化衬底的半导体发光器件及其制造方法。半导体发光器件包括：衬底; 在基板上依次形成第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层，其中，在其表面上设置有具有多个凸部的图案，其中，图案的凸部，第一凸部与相邻的凸部之间的距离与第二凸部与相邻的凸部之间的距离不同。

3. 发明申请

US20110263061A1 SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING PATTERNED SUBSTRATE AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：具有图案基板的半导体发光器件及其制造方法
公开(公告)号：US20110263061A1
公开(公告)日：2011-10-27
申请号：US13176712
申请日：2011-07-05
申请人： Sun Woon KIM , Hyun Kyung Kim , Hyung Ky Back , Jae Ho Han
发明人： Sun Woon KIM , Hyun Kyung Kim , Hyung Ky Back , Jae Ho Han
IPC分类号： H01L31/18
CPC分类号： H01L33/22 , H01L33/12 , H01L2933/0083
摘要： There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions.
摘要翻译：提供了具有图案化衬底的半导体发光器件及其制造方法。半导体发光器件包括衬底; 在基板上依次形成第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层，其中，在其表面上设置有具有多个凸部的图案，其中，图案的凸部，第一凸部与相邻的凸部之间的距离与第二凸部与相邻的凸部之间的距离不同。

4. 发明申请

US20100006878A1 SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING PATTERNED SUBSTRATE AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：具有图案基板的半导体发光器件及其制造方法
公开(公告)号：US20100006878A1
公开(公告)日：2010-01-14
申请号：US12273512
申请日：2008-11-18
申请人： Sun Woon KIM , Hyun Kyung Kim , Hyung Ky Back , Jae Ho Han
发明人： Sun Woon KIM , Hyun Kyung Kim , Hyung Ky Back , Jae Ho Han
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/22 , H01L33/12 , H01L2933/0083
摘要： There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions.
摘要翻译：提供了具有图案化衬底的半导体发光器件及其制造方法。半导体发光器件包括：衬底; 在基板上依次形成第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层，其中，在其表面上设置有具有多个凸部的图案，其中，图案的凸部，第一凸部与相邻的凸部之间的距离与第二凸部与相邻的凸部之间的距离不同。

5. 发明授权

US07692201B2 Semiconductor light-emitting device with improved light extraction efficiency 有权
标题翻译：具有提高光提取效率的半导体发光器件
公开(公告)号：US07692201B2
公开(公告)日：2010-04-06
申请号：US11098802
申请日：2005-04-05
申请人： Sun Woon Kim , Hyun Kyung Kim , Je Won Kim , In Seok Choi , Kyu Han Lee , Jeong Tak Oh
发明人： Sun Woon Kim , Hyun Kyung Kim , Je Won Kim , In Seok Choi , Kyu Han Lee , Jeong Tak Oh
IPC分类号： H01L33/00
CPC分类号： H01L33/22
摘要： The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.
摘要翻译：本发明提供一种半导体发光装置。发光器件包括顺序地形成在衬底上的第一导电覆盖层，有源层和第二导电覆层。在发光装置中，基板在其上表面形成有一个或多个侧图案，同时连接到上表面的一个或多个边缘。侧面图案由突起或凹陷组成，以将光散射或衍射到发光器件的上部或下部。

6. 发明授权

US08071994B2 Semiconductor light-emitting device with improved light extraction efficiency 有权
标题翻译：具有提高光提取效率的半导体发光器件
公开(公告)号：US08071994B2
公开(公告)日：2011-12-06
申请号：US12624106
申请日：2009-11-23
申请人： Sun Woon Kim , Hyun Kyung Kim , Je Won Kim , In Seok Choi , Kyu Han Lee , Jeong Tak Oh
发明人： Sun Woon Kim , Hyun Kyung Kim , Je Won Kim , In Seok Choi , Kyu Han Lee , Jeong Tak Oh
IPC分类号： H01L33/00
CPC分类号： H01L33/22
摘要： The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.
摘要翻译：本发明提供一种半导体发光装置。发光器件包括顺序地形成在衬底上的第一导电覆盖层，有源层和第二导电覆层。在发光装置中，基板在其上表面形成有一个或多个侧图案，同时连接到上表面的一个或多个边缘。侧面图案由突起或凹陷组成，以将光散射或衍射到发光器件的上部或下部。

7. 发明授权

US08455906B2 Semiconductor light-emitting device with improved light extraction efficiency 有权
标题翻译：具有提高光提取效率的半导体发光器件
公开(公告)号：US08455906B2
公开(公告)日：2013-06-04
申请号：US13286881
申请日：2011-11-01
申请人： Sun Woon Kim , Hyun Kyung Kim , Je Won Kim , In Seok Choi , Kyu Han Lee , Jeong Tak Oh
发明人： Sun Woon Kim , Hyun Kyung Kim , Je Won Kim , In Seok Choi , Kyu Han Lee , Jeong Tak Oh
IPC分类号： H01L31/0232 , H01L31/0236
CPC分类号： H01L33/22
摘要： The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.
摘要翻译：本发明提供一种半导体发光装置。发光器件包括顺序地形成在衬底上的第一导电覆盖层，有源层和第二导电覆层。在发光装置中，基板在其上表面形成有一个或多个侧图案，同时连接到上表面的一个或多个边缘。侧面图案由突起或凹陷组成，以将光散射或衍射到发光器件的上部或下部。

8. 发明申请

US20130037758A1 Preparation Method of Transition Metal Oxide and Carbon Nanotube Composite, and Composite Thereof 有权
标题翻译：过渡金属氧化物和碳纳米管复合材料及其复合材料的制备方法
公开(公告)号：US20130037758A1
公开(公告)日：2013-02-14
申请号：US13635872
申请日：2011-04-20
申请人： Kwang Bum Kim , Hyun Kyung Kim , Ji Young Kim
发明人： Kwang Bum Kim , Hyun Kyung Kim , Ji Young Kim
IPC分类号： H01M4/485 , H01M4/52 , H01M4/04 , H01M4/48 , B82Y40/00 , B82Y30/00
CPC分类号： H01M4/485 , B82Y30/00 , B82Y40/00 , C01B32/174 , H01M4/366 , H01M4/525 , H01M4/587 , H01M4/625 , H01M10/052 , Y02P70/54
摘要： Provided is a method of preparing a complex of a transition metal oxide and carbon nanotube. The method includes (a) dispersing carbon nanotube powder in a solvent, (b) mixing the dispersion with a transition metal salt, and (c) synthesizing a complex of transition metal oxide and carbon nanotube by applying microwave to the mixed solution. The method may considerably reduce the time required to synthesize the complex. In the complex of transition metal oxide and carbon nanotube prepared by the method, the transition metal oxide may be stacked on the surface of the carbon nanotube in the size of a nanoparticle, and may enhance charge/discharge characteristics when being applied to a lithium secondary battery as an anode material.
摘要翻译：提供了制备过渡金属氧化物和碳纳米管的络合物的方法。该方法包括（a）将碳纳米管粉末分散在溶剂中，（b）将分散体与过渡金属盐混合，（c）通过向混合溶液中施加微波合成过渡金属氧化物和碳纳米管的络合物。该方法可以大大减少合成复合物所需的时间。在通过该方法制备的过渡金属氧化物和碳纳米管的复合物中，过渡金属氧化物可以以纳米颗粒的尺寸堆叠在碳纳米管的表面上，并且可以在施加到锂二次体时增强充电/放电特性电池作为阳极材料。

9. 发明授权

US08258539B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US08258539B2
公开(公告)日：2012-09-04
申请号：US12838031
申请日：2010-07-16
申请人： Seok Min Hwang , Hyun Kyung Kim , Kun Yoo Ko , Sang Su Hong , Kyu Han Lee , Bok Ki Min
发明人： Seok Min Hwang , Hyun Kyung Kim , Kun Yoo Ko , Sang Su Hong , Kyu Han Lee , Bok Ki Min
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20
摘要： The invention relates to a high-output nitride light emitting device. The light emitting device includes a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer deposited in their order on a substrate. The light emitting device also includes first and second insulation layers formed in different upper surface portions of the nitride semiconductor light emitting device, and first and second bonding pads formed respectively on the first and second insulation layers. The light emitting device further includes first and second extension electrodes extended from the first and second bonding pads and coupled respectively to the first and second conductivity semiconductor layers. The electrode arrangement according to the present invention prevents direct coupling between the bonding pads and the light emitting device, thus allowing a symmetrical structure that can achieve more uniform current spreading using only the extension electrodes.
摘要翻译：本发明涉及高输出氮化物发光器件。发光器件包括依次沉积在衬底上的第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层。发光器件还包括形成在氮化物半导体发光器件的不同上表面部分中的第一和第二绝缘层，以及分别形成在第一绝缘层和第二绝缘层上的第一和第二接合焊盘。发光器件还包括从第一和第二焊盘延伸并分别耦合到第一和第二导电半导体层的第一和第二延伸电极。根据本发明的电极装置防止接合焊盘和发光器件之间的直接耦合，从而允许仅使用延伸电极实现更均匀的电流扩展的对称结构。

10. 发明授权

US07294864B2 Flip chip type nitride semiconductor light-emitting diode 有权
标题翻译：倒装芯片型氮化物半导体发光二极管
公开(公告)号：US07294864B2
公开(公告)日：2007-11-13
申请号：US10925934
申请日：2004-08-26
申请人： Dong Joon Kim , Hyun Kyung Kim
发明人： Dong Joon Kim , Hyun Kyung Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32 , H01L33/387 , H01L33/44
摘要： A flip chip type nitride semiconductor light-emitting diode includes a light-transmissive substrate for growing nitride single crystals; an n-type nitride semiconductor layer formed on the light-transmissive substrate; an active layer formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a mesh-type dielectric layer formed on the p-type nitride semiconductor layer and having a mesh structure with a plurality of open regions in which the p-type nitride semiconductor layer is exposed; a highly reflective ohmic contact layer formed on the mesh-type dielectric layer and the open regions in which the p-type nitride semiconductor layer is exposed; and a p-bonding electrode and an n-electrode formed on the highly reflective ohmic contact layer and the n-type nitride semiconductor layer, respectively.
摘要翻译：倒装芯片型氮化物半导体发光二极管包括用于生长氮化物单晶的透光基板; 形成在所述透光性基板上的n型氮化物半导体层; 形成在所述n型氮化物半导体层上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在所述p型氮化物半导体层上并且具有其中露出所述p型氮化物半导体层的多个开放区域的网状结构的网状电介质层; 形成在网状介电层上的高反射欧姆接触层和露出p型氮化物半导体层的开放区域; 以及分别形成在高反射欧姆接触层和n型氮化物半导体层上的p型接合电极和n电极。

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