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1. 发明申请

US20120043557A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY 有权
标题翻译：具有改进的光提取效率的半导体发光器件
公开(公告)号：US20120043557A1
公开(公告)日：2012-02-23
申请号：US13286881
申请日：2011-11-01
申请人： Sun Woon KIM , Hyun Kyung KIM , Je Won KIM , In Seok CHOI , Kyu Han LEE , Jeong Tak OH
发明人： Sun Woon KIM , Hyun Kyung KIM , Je Won KIM , In Seok CHOI , Kyu Han LEE , Jeong Tak OH
IPC分类号： H01L33/02 , H01L33/22
CPC分类号： H01L33/22
摘要： The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.
摘要翻译：本发明提供一种半导体发光装置。发光器件包括顺序地形成在衬底上的第一导电覆盖层，有源层和第二导电覆层。在发光装置中，基板在其上表面形成有一个或多个侧图案，同时连接到上表面的一个或多个边缘。侧面图案由突起或凹陷组成，以将光散射或衍射到发光器件的上部或下部。

2. 发明申请

US20100065877A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY 有权
标题翻译：具有改进的光提取效率的半导体发光器件
公开(公告)号：US20100065877A1
公开(公告)日：2010-03-18
申请号：US12624106
申请日：2009-11-23
申请人： Sun Woon KIM , Hyun Kyung KIM , Je Won KIM , In Seok CHOI , Kyu Han LEE , Jeong Tak OH
发明人： Sun Woon KIM , Hyun Kyung KIM , Je Won KIM , In Seok CHOI , Kyu Han LEE , Jeong Tak OH
IPC分类号： H01L33/00
CPC分类号： H01L33/22
摘要： The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.
摘要翻译：本发明提供一种半导体发光装置。发光器件包括顺序地形成在衬底上的第一导电覆盖层，有源层和第二导电覆层。在发光装置中，基板在其上表面形成有一个或多个侧图案，同时连接到上表面的一个或多个边缘。侧面图案由突起或凹陷组成，以将光散射或衍射到发光器件的上部或下部。

3. 发明申请

US20140110720A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20140110720A1
公开(公告)日：2014-04-24
申请号：US14057193
申请日：2013-10-18
申请人： Eun Sil CHOI , Jeong Tak OH , Myung Hoon JUNG , Ki Young SONG
发明人： Eun Sil CHOI , Jeong Tak OH , Myung Hoon JUNG , Ki Young SONG
IPC分类号： H01L33/32
CPC分类号： H01L33/325 , H01L33/06 , H01L33/32 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： A light emitting device includes a first semiconductor layer having a first conductive dopant, an active layer on the first semiconductor layer, an electron blocking layer on the active layer, a carrier injection layer between the active layer and the electron blocking layer, and a second semiconductor layer having a second conductive dopant on the electron blocking layer. The carrier injection layer includes the first conductive dopant and the second conductive dopant, and the first conductive dopant of the carrier injection layer has a concentration lower than a concentration of the second conductive dopant.
摘要翻译：发光器件包括具有第一导电掺杂剂的第一半导体层，第一半导体层上的有源层，有源层上的电子阻挡层，有源层和电子阻挡层之间的载流子注入层，以及第二半导体层半导体层在电子阻挡层上具有第二导电掺杂剂。载流子注入层包括第一导电掺杂剂和第二导电掺杂剂，并且载流子注入层的第一导电掺杂剂的浓度低于第二导电掺杂剂的浓度。

4. 发明申请

US20120129289A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20120129289A1
公开(公告)日：2012-05-24
申请号：US13365056
申请日：2012-02-02
申请人： Jeong Tak OH , Yong Chun Kim
发明人： Jeong Tak OH , Yong Chun Kim
IPC分类号： H01L33/02
CPC分类号： H01L21/0254 , H01L21/0237 , H01L21/02458 , H01L21/02494 , H01L21/02587 , H01L33/007 , H01L33/06 , H01L33/20 , H01L33/24
摘要： A nitride semiconductor light emitting device, and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device includes a substrate, an n-type nitride semiconductor layer disposed on the substrate and including a plurality of V-shaped pits in a top surface thereof, an active layer disposed on the n-type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-shaped pits, and a p-type nitride semiconductor layer disposed on the active layer and including a plurality of protrusions on a top surface thereof. Since the plurality of V-shaped pits are formed in the top surface of the n-type nitride semiconductor layer, the protrusions can be formed on the p-type nitride semiconductor layer as an in-situ process. Accordingly, the resistance to ESD, and light extraction efficiency are enhanced.
摘要翻译：公开了一种氮化物半导体发光器件及其制造方法。氮化物半导体发光器件包括衬底，设置在衬底上的n型氮化物半导体层，在其顶表面中包括多个V形凹坑，设置在n型氮化物半导体层上的有源层，并且包括符合多个V形凹坑的形状的凹陷以及设置在活性层上的p型氮化物半导体层，并且在其顶表面上包括多个突起。由于在n型氮化物半导体层的顶表面上形成多个V形凹坑，所以可以作为原位工艺在p型氮化物半导体层上形成突起。因此，提高了对ESD的耐受性和光提取效率。

5. 发明申请

US20120119187A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20120119187A1
公开(公告)日：2012-05-17
申请号：US13358034
申请日：2012-01-25
申请人： Sang Won KANG , Yong Chun KIM , Dong Hyun CHO , Jeong Tak OH , Dong Joon KIM
发明人： Sang Won KANG , Yong Chun KIM , Dong Hyun CHO , Jeong Tak OH , Dong Joon KIM
IPC分类号： H01L33/04 , H01L33/02
CPC分类号： H01L33/0075 , H01L33/22 , H01L33/24 , H01L33/32
摘要： The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.
摘要翻译：本发明涉及改进了静电放电（ESD）公差（耐受性）的GaN基氮化物系发光器件及其制造方法，其包括基板和由n型氮化物半导体制成的V形失真结构层，有源层和p型氮化物半导体层，并且基于n型氮化物半导体层形成。

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