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1. 发明授权

US08963178B2 Light emitting diode chip having distributed bragg reflector and method of fabricating the same 有权
标题翻译：具有分布式布拉格反射体的发光二极管芯片及其制造方法
公开(公告)号：US08963178B2
公开(公告)日：2015-02-24
申请号：US13023876
申请日：2011-02-09
申请人： Sum Geun Lee , Sang Ki Jin , Jin Cheol Shin , Jong Kyu Kim , So Ra Lee
发明人： Sum Geun Lee , Sang Ki Jin , Jin Cheol Shin , Jong Kyu Kim , So Ra Lee
IPC分类号： H01L33/00 , H01L33/46 , H01L27/15
CPC分类号： H01L27/153 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/42 , H01L33/46 , H01L33/505 , H01L33/60 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2933/0025 , H01L2933/0033 , H01L2933/0041 , H01L2933/0058 , H01L2924/00014
摘要： Exemplary embodiments of the present invention disclose a light emitting diode chip including a substrate having a first surface and a second surface, a light emitting structure arranged on the first surface of the substrate and including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, a distributed Bragg reflector arranged on the second surface of the substrate, the distributed Bragg reflector to reflect light emitted from the light emitting structure, and a metal layer arranged on the distributed Bragg reflector, wherein the distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range.
摘要翻译：本发明的示例性实施例公开了一种包括具有第一表面和第二表面的基板的发光二极管芯片，布置在基板的第一表面上的发光结构，并且包括布置在第一导电类型半导体层以及第二导电型半导体层，布置在基板的第二表面上的分布式布拉格反射器，用于反射从发光结构发射的光的分布式布拉格反射器和布置在分布式布拉格反射器上的金属层，其中分布式布拉格反射器布拉格反射体对于蓝色波长范围内的第一波长的光，绿色波长范围的第二波长的光和红色波长范围的第三波长的光具有至少90％的反射率。

2. 发明授权

US08314440B2 Light emitting diode chip and method of fabricating the same 有权
标题翻译：发光二极管芯片及其制造方法
公开(公告)号：US08314440B2
公开(公告)日：2012-11-20
申请号：US13073522
申请日：2011-03-28
申请人： Min Chan Heo , Sang Ki Jin , Jong Kyu Kim , Jin Cheol Shin , So Ra Lee , Sum Geun Lee
发明人： Min Chan Heo , Sang Ki Jin , Jong Kyu Kim , Jin Cheol Shin , So Ra Lee , Sum Geun Lee
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/46 , H01L33/08 , H01L33/20 , H01L33/50 , H01L33/60 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2933/0025 , H01L2924/00014 , H01L2924/00
摘要： Exemplary embodiments of the present invention provide light emitting diode (LED) chips and a method of fabricating the same. An LED chip according to an exemplary embodiment includes a substrate; a light emitting structure arranged on the substrate, and an alternating lamination bottom structure arranged under the substrate. The alternating lamination bottom structure includes a plurality of dielectric pairs, each of the dielectric pairs including a first material layer having a first refractive index and a second material layer having a second refractive index, the first refractive index being greater than the second refractive index.
摘要翻译：本发明的示例性实施例提供了发光二极管（LED）芯片及其制造方法。根据示例性实施例的LED芯片包括基板; 布置在基板上的发光结构，以及布置在基板下方的交替叠层底部结构。所述交替叠层底部结构包括多个电介质对，所述电介质对中的每一个包括具有第一折射率的第一材料层和具有第二折射率的第二材料层，所述第一折射率大于所述第二折射率。

3. 发明授权

US08907360B2 Light emitting diode chip having distributed bragg reflector, method of fabricating the same, and light emitting diode package having distributed bragg reflector 有权
标题翻译：具有分布式布拉格反射体的发光二极管芯片及其制造方法以及具有分布式布拉格反射器的发光二极管封装
公开(公告)号：US08907360B2
公开(公告)日：2014-12-09
申请号：US12917937
申请日：2010-11-02
申请人： Chung Hoon Lee , Sum Geun Lee , Sang Ki Jin , Jin Cheol Shin , Jong Kyu Kim , So Ra Lee
发明人： Chung Hoon Lee , Sum Geun Lee , Sang Ki Jin , Jin Cheol Shin , Jong Kyu Kim , So Ra Lee
IPC分类号： H01L33/00 , H01L33/46 , H01L33/60
CPC分类号： H01L33/46 , H01L33/0079 , H01L33/60 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： An exemplary embodiment of the present invention discloses a light emitting diode chip including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, and a distributed Bragg reflector to reflect light emitted from the light emitting structure. The distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range.
摘要翻译：本发明的一个示例性实施例公开了一种发光二极管芯片，其包括基板，布置在基板上的发光结构，发光结构包括布置在第一导电型半导体层和第二导电型半导体之间的有源层层和分布布拉格反射器以反射从发光结构发射的光。分布布拉格反射器对于蓝色波长范围内的第一波长的光，绿色波长范围内的第二波长的光和红色波长范围内的第三波长的光具有至少90％的反射率。

4. 发明授权

US08354680B2 AC light emitting diode having full-wave light emitting cell and half-wave light emitting cell 有权
标题翻译：交流发光二极管具有全波发光单元和半波发光单元
公开(公告)号：US08354680B2
公开(公告)日：2013-01-15
申请号：US12882406
申请日：2010-09-15
申请人： Dae Sung Kal , Won Cheol Seo , Jang Woo Lee , Jin Cheol Shin , Jong Kyu Kim , Sang Ki Jin , So Ra Lee
发明人： Dae Sung Kal , Won Cheol Seo , Jang Woo Lee , Jin Cheol Shin , Jong Kyu Kim , Sang Ki Jin , So Ra Lee
IPC分类号： H01L33/00
CPC分类号： H01L27/156 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： The present invention discloses an alternating current (AC) light emitting diode (LED) having half-wave light emitting cells and full-wave light emitting cells. The AC LED has a plurality of light emitting cells electrically connected between bonding pads on a single substrate. The AC LED includes a first row of half-wave light emitting cells each having an anode terminal and a cathode terminal, a second row of full-wave light emitting cells each having an anode terminal and a cathode terminal, and a third row of half-wave light emitting cells each having an anode terminal and a cathode terminal. In the AC LED, the second row is arranged between the first row and the third row, and the third row includes a pair of light emitting cells that share a cathode terminal with each other. The cathode terminal shared by the pair of light emitting cells in the third row is electrically connected to the anode terminal of a corresponding light emitting cell of the half-wave light emitting cells in the first row through a conductor that is electrically insulated from the full-wave light emitting cells in the second row.
摘要翻译：本发明公开了一种具有半波发光单元和全波发光单元的交流（AC）发光二极管（LED）。 AC LED具有电连接在单个基板上的焊盘之间的多个发光单元。 AC LED包括具有阳极端子和阴极端子的第一排半波发光单元，具有阳极端子和阴极端子的第二排全波发光单元，以及第三排半波发光单元每个具有阳极端子和阴极端子的发光单元。在AC LED中，第二行布置在第一行和第三行之间，第三行包括彼此共享阴极端子的一对发光单元。由第三行中的一对发光单元共享的阴极端子通过与整体电绝缘的导体电连接到第一行中的半波发光单元的对应的发光单元的阳极端子 - 第二排发光单元。

5. 发明申请

US20120080695A1 LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US20120080695A1
公开(公告)日：2012-04-05
申请号：US13080116
申请日：2011-04-05
申请人： Sum Geun Lee , Jin Cheol Shin , Jong Kyu Kim , Chang Youn Kim
发明人： Sum Geun Lee , Jin Cheol Shin , Jong Kyu Kim , Chang Youn Kim
IPC分类号： H01L33/60
CPC分类号： H01L33/60 , H01L27/156 , H01L33/08 , H01L33/38 , H01L33/46
摘要： Exemplary embodiments of the present invention disclose a light emitting diode (LED) and a method of fabricating the same. The LED includes a substrate, a semiconductor stack arranged on the substrate, the semiconductor stack including an upper semiconductor layer having a first conductivity type, an active layer, and a lower semiconductor layer having a second conductivity type, isolation trenches separating the semiconductor stack into a plurality of regions, connectors disposed between the substrate and the semiconductor stack, the connectors electrically connecting the plurality of regions to one another, and a distributed Bragg reflector (DBR) having a multi-layered structure, the DBR disposed between the semiconductor stack and the connectors. The connectors are electrically connected to the semiconductor stack through the DBR, and portions of the DBR are disposed between the isolation trenches and the connectors.
摘要翻译：本发明的示例性实施例公开了一种发光二极管（LED）及其制造方法。 LED包括衬底，布置在衬底上的半导体堆叠，所述半导体堆叠包括具有第一导电类型的上半导体层，有源层和具有第二导电类型的下半导体层，将半导体堆叠分离成的隔离沟槽多个区域，设置在所述基板和所述半导体堆叠之间的连接器，所述连接器将所述多个区域彼此电连接，以及具有多层结构的分布式布拉格反射器（DBR），所述DBR布置在所述半导体堆叠和连接器。连接器通过DBR电连接到半导体堆叠，并且DBR的部分设置在隔离沟槽和连接器之间。

6. 发明授权

US08383433B2 Light emitting diode and method of fabricating the same 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US08383433B2
公开(公告)日：2013-02-26
申请号：US13080116
申请日：2011-04-05
申请人： Sum Geun Lee , Jin Cheol Shin , Jong Kyu Kim , Chang Youn Kim
发明人： Sum Geun Lee , Jin Cheol Shin , Jong Kyu Kim , Chang Youn Kim
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/60 , H01L27/156 , H01L33/08 , H01L33/38 , H01L33/46
摘要： Exemplary embodiments of the present invention disclose a light emitting diode (LED) and a method of fabricating the same. The LED includes a substrate, a semiconductor stack arranged on the substrate, the semiconductor stack including an upper semiconductor layer having a first conductivity type, an active layer, and a lower semiconductor layer having a second conductivity type, isolation trenches separating the semiconductor stack into a plurality of regions, connectors disposed between the substrate and the semiconductor stack, the connectors electrically connecting the plurality of regions to one another, and a distributed Bragg reflector (DBR) having a multi-layered structure, the DBR disposed between the semiconductor stack and the connectors. The connectors are electrically connected to the semiconductor stack through the DBR, and portions of the DBR are disposed between the isolation trenches and the connectors.
摘要翻译：本发明的示例性实施例公开了一种发光二极管（LED）及其制造方法。 LED包括衬底，布置在衬底上的半导体堆叠，所述半导体堆叠包括具有第一导电类型的上半导体层，有源层和具有第二导电类型的下半导体层，将半导体堆叠分离成的隔离沟槽多个区域，设置在所述基板和所述半导体堆叠之间的连接器，所述连接器将所述多个区域彼此电连接，以及具有多层结构的分布式布拉格反射器（DBR），所述DBR布置在所述半导体堆叠和连接器。连接器通过DBR电连接到半导体堆叠，并且DBR的部分设置在隔离沟槽和连接器之间。

7. 发明申请

US20120187424A1 LIGHT EMITTING DIODE 有权
标题翻译：发光二极管
公开(公告)号：US20120187424A1
公开(公告)日：2012-07-26
申请号：US13187010
申请日：2011-07-20
申请人： Jong Kyu Kim , So Ra Lee , Ho Jun Suk , Jin Cheol Shin
发明人： Jong Kyu Kim , So Ra Lee , Ho Jun Suk , Jin Cheol Shin
IPC分类号： H01L33/08 , H01L33/60 , H01L33/38
CPC分类号： H01L33/08 , H01L27/156 , H01L33/145 , H01L33/20 , H01L33/38 , H01L33/58 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： Exemplary embodiments of the present invention relate to light emitting diodes including a plurality of light emitting cells on a substrate to be suitable for AC driving. The light emitting diode includes a substrate and a plurality of light emitting cell formed on the substrate. Each light emitting cell includes a first region at a boundary of the light emitting cell and a second region opposite to the first region. A first electrode pad is formed in the first region of the light emitting cell. A second electrode pad having a linear shape is disposed to face the first electrode pad while regionally defining a peripheral region together with the boundary of the second region. A wire connects the first electrode pad to the second electrode pad between two adjacent light emitting cells.
摘要翻译：本发明的示例性实施例涉及包括适于AC驱动的衬底上的多个发光单元的发光二极管。发光二极管包括基板和形成在基板上的多个发光单元。每个发光单元包括在发光单元的边界处的第一区域和与第一区域相对的第二区域。第一电极焊盘形成在发光单元的第一区域中。具有直线形状的第二电极焊盘设置成面对第一电极焊盘，同时区域地限定与第二区域的边界一起的周边区域。导线将第一电极焊盘连接到两个相邻的发光单元之间的第二电极焊盘。

8. 发明授权

US08629471B2 Light emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US08629471B2
公开(公告)日：2014-01-14
申请号：US13187010
申请日：2011-07-20
申请人： Jong Kyu Kim , So Ra Lee , Ho Jun Suk , Jin Cheol Shin
发明人： Jong Kyu Kim , So Ra Lee , Ho Jun Suk , Jin Cheol Shin
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L27/156 , H01L33/145 , H01L33/20 , H01L33/38 , H01L33/58 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： Exemplary embodiments of the present invention relate to light emitting diodes including a plurality of light emitting cells on a substrate to be suitable for AC driving. The light emitting diode includes a substrate and a plurality of light emitting cell formed on the substrate. Each light emitting cell includes a first region at a boundary of the light emitting cell and a second region opposite to the first region. A first electrode pad is formed in the first region of the light emitting cell. A second electrode pad having a linear shape is disposed to face the first electrode pad while regionally defining a peripheral region together with the boundary of the second region. A wire connects the first electrode pad to the second electrode pad between two adjacent light emitting cells.
摘要翻译：本发明的示例性实施例涉及包括适于AC驱动的衬底上的多个发光单元的发光二极管。发光二极管包括基板和形成在基板上的多个发光单元。每个发光单元包括在发光单元的边界处的第一区域和与第一区域相对的第二区域。第一电极焊盘形成在发光单元的第一区域中。具有直线形状的第二电极焊盘设置成面对第一电极焊盘，同时区域地限定与第二区域的边界一起的周边区域。导线将第一电极焊盘连接到两个相邻的发光单元之间的第二电极焊盘。

9. 发明授权

US09236532B2 Light emitting diode having electrode pads 有权
标题翻译：具有电极焊盘的发光二极管
公开(公告)号：US09236532B2
公开(公告)日：2016-01-12
申请号：US13330327
申请日：2011-12-19
申请人： Sum Geun Lee , Jin Cheol Shin , Yeo Jin Yoon
发明人： Sum Geun Lee , Jin Cheol Shin , Yeo Jin Yoon
IPC分类号： H01L33/38 , H01L33/62 , H01L33/20 , H01L33/44
CPC分类号： H01L33/387 , H01L27/153 , H01L33/08 , H01L33/20 , H01L33/38 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to light-emitting diodes. A light-emitting diode according to an exemplary embodiment of the present invention includes a first group including a plurality of first light emitting cells connected in parallel to each other, and a second group including a plurality of second light emitting cells connected in parallel to each other. Each first light emitting cell and second light emitting cell has a semiconductor stack that includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. At least two light emitting cells of the first light emitting cells share the first conductivity-type semiconductor layer, and at least two light emitting cells of the second light emitting cells share the first conductivity-type semiconductor layer. The first light emitting cells are connected in series to the second light emitting cells.
摘要翻译：本发明涉及发光二极管。根据本发明的示例性实施例的发光二极管包括：第一组，其包括彼此并联连接的多个第一发光单元;以及第二组，包括与每个并联连接的多个第二发光单元其他。每个第一发光单元和第二发光单元具有包括第一导电型半导体层，第二导电型半导体层和设置在第一导电类型半导体层和第二导电类型半导体层之间的有源层的半导体堆叠，型半导体层。第一发光单元的至少两个发光单元共享第一导电型半导体层，并且第二发光单元的至少两个发光单元共享第一导电型半导体层。第一发光单元与第二发光单元串联连接。

10. 发明授权

US08791483B2 High efficiency light emitting diode and method for fabricating the same 有权
标题翻译：高效率发光二极管及其制造方法
公开(公告)号：US08791483B2
公开(公告)日：2014-07-29
申请号：US13077254
申请日：2011-03-31
申请人： Kyung Hee Ye , Chang Youn Kim , Jin Cheol Shin , Joon Hee Lee , Jong Kyun You , Hong Chol Lim
发明人： Kyung Hee Ye , Chang Youn Kim , Jin Cheol Shin , Joon Hee Lee , Jong Kyun You , Hong Chol Lim
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/0079 , H01L33/20 , H01L33/22 , H01L33/24 , H01L33/387 , H01L33/42 , H01L33/44
摘要： A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.
摘要翻译：一种高效率发光二极管，包括：位于支撑基板上的半导体堆叠，包括p型化合物半导体层，有源层和n型化合物半导体层; 设置在分隔所述p型化合物半导体层和有源层的开口中的绝缘层; 设置在绝缘层和p型化合物半导体层上的透明电极层; 覆盖所述透明电极层的反射绝缘层，以将来自所述有源层的光反射离开所述支撑基板; 覆盖反射绝缘层的p电极; 并且在n型化合物半导体层的顶部上形成n电极。 p电极通过绝缘层与透明电极层电连接。

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