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1. 发明申请

US20070154913A1 Method for preparing active nanoarchaeum equitans DNA polymerase and the active DNA polymerase prepared by the method 有权
标题翻译：制备活性纳米石脑油DNA聚合酶和通过该方法制备的活性DNA聚合酶的方法
公开(公告)号：US20070154913A1
公开(公告)日：2007-07-05
申请号：US11580485
申请日：2006-10-13
申请人： Suk-Tae Kwon , Jeong Choi , Ki Nam
发明人： Suk-Tae Kwon , Jeong Choi , Ki Nam
IPC分类号： C12Q1/68 , C07H21/04 , C12P21/06 , C12P19/34 , C12N9/22 , C12N1/21
CPC分类号： C12N9/1252 , C12Q1/686 , C12Q2521/101
摘要： Disclosed are a method of preparing an active Nanoarchaeum equitans B-type DNA polymerase (Neq DNA polymerase), an active Neq DNA polymerase prepared according to the method, and a polymerase chain reaction (PCR) using the active Neq DNA polymerase. The active Neq DNA polymerase may be used in various nucleic acid polymerization reactions, such as PCR.
摘要翻译：公开了制备活性纳米石斛碱B型DNA聚合酶（Neq DNA聚合酶），根据该方法制备的活性Neq DNA聚合酶和使用活性Neq DNA聚合酶的聚合酶链反应（PCR）的方法。活性Neq DNA聚合酶可用于各种核酸聚合反应，如PCR。

2. 发明申请

US20070295494A1 Flat Type Heat Transferring Device and Manufacturing Method of the Same 审中-公开
标题翻译：平板式传热装置及其制造方法
公开(公告)号：US20070295494A1
公开(公告)日：2007-12-27
申请号：US11768689
申请日：2007-06-26
申请人： George Mayer , Jae Choi , Ki Nam
发明人： George Mayer , Jae Choi , Ki Nam
IPC分类号： F28F3/12
CPC分类号： F28D15/0233 , F28D15/046 , Y10T29/49353
摘要： The present invention relates to a flat type heat transferring device, and manufacturing method of the same, which is comprises of a capillary wick that is provided inside a case and formed by weaving a wire in the horizontal direction and the vertical direction so as to absorb a liquid coolant, and a linear member that is formed to have a different wire diameter from the wire of the capillary wick and woven in the capillary wick to form a space where a vapor coolant flows. Accordingly, the mechanically stabilized support rigidity can be secured and an ultra thin configuration can be implemented with a light-weight, in particular, the problem of degrading the capillary force is resolved, and it has the effect that the cooling efficiency can be improved with smooth flowing of a coolant.
摘要翻译：扁平型传热装置及其制造方法技术领域本发明涉及一种扁平型传热装置及其制造方法，其特征在于，包括：设置在壳体内部并通过在水平方向和垂直方向上编织电线形成的毛细管芯，以吸收液体冷却剂和线性构件，其被形成为具有与毛细管芯的线不同的线直径并且在毛细管芯中织造以形成蒸气冷却剂流动的空间。因此，可以确保机械稳定的支撑刚度，并且可以以轻的重量实现超薄结构，特别是解决了降低毛细管力的问题，并且具有可以通过以下方式改善冷却效率：冷却液流畅。

3. 发明申请

US20060105537A1 Method for forming storage electrode of semiconductor device 审中-公开
标题翻译：形成半导体器件的储存电极的方法
公开(公告)号：US20060105537A1
公开(公告)日：2006-05-18
申请号：US11148559
申请日：2005-06-09
申请人： Ki Nam , Kyung Lee
发明人： Ki Nam , Kyung Lee
IPC分类号： H01L21/20
CPC分类号： H01L21/32134 , H01L21/31144 , H01L27/10852 , H01L28/91
摘要： A method for forming a storage electrode of a semiconductor device is provided, the method including forming an oxide film on a lower insulating layer disposed on a semiconductor substrate, forming a hard mask silicide layer pattern defining a strode electrode region on the oxide film, subjecting the hard mask silicide layer to a cleaning process to recess the hard mask silicide layer pattern, and etching the oxide film using the recessed hard mask silicide layer pattern as an etching mask until a landing plug is exposed to form a storage electrode.
摘要翻译：提供一种形成半导体器件的存储电极的方法，所述方法包括在设置在半导体衬底上的下绝缘层上形成氧化膜，在氧化膜上形成限定步进电极区的硬掩模硅化物层图案，硬掩模硅化物层到用于凹陷硬掩模硅化物层图案的清洁工艺，并且使用凹入的硬掩模硅化物层图案作为蚀刻掩模蚀刻氧化膜，直到着陆塞被暴露以形成存储电极。

4. 发明申请

US20050239420A1 Rf amplifier system with interface to provide a computer readable spectral depiction of the rf output 审中-公开
标题翻译： Rf放大器系统，具有接口，提供rf输出的计算机可读光谱描述
公开(公告)号：US20050239420A1
公开(公告)日：2005-10-27
申请号：US10506714
申请日：2003-03-06
申请人： Ki Nam
发明人： Ki Nam
IPC分类号： G01R31/28 , H03C1/62 , H04B1/04 , H04B17/00
CPC分类号： H04B1/0475 , G01R31/2822
摘要： An RF amplifier system includes an RF power amplifier, a coupler, a digital signal analysis circuit, and an interface. The RF power amplifier has an RF output. The coupler is coupled to the RF power amplifier to detect the RF output. The digital signal analysis circuit is coupled to the coupler to produce a digital signal that provides a spectral depiction of the RF output. The interface is coupled to the digital signal analysis circuit to provide the spectral depiction of the RF output to an attached computer.
摘要翻译： RF放大器系统包括RF功率放大器，耦合器，数字信号分析电路和接口。 RF功率放大器具有RF输出。耦合器耦合到RF功率放大器以检测RF输出。数字信号分析电路耦合到耦合器以产生提供RF输出的频谱描绘的数字信号。该接口耦合到数字信号分析电路，以向RF连接的计算机提供RF输出的频谱描述。

5. 发明申请

US20070197038A1 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20070197038A1
公开(公告)日：2007-08-23
申请号：US11481520
申请日：2006-07-05
申请人： Seung Kim , Ki Nam
发明人： Seung Kim , Ki Nam
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/32137
摘要： A method for manufacturing a semiconductor device includes forming a key open mask for coating a cell region in order to a gate polysilicon layer over an overlay vernier region formed in a gate forming process, and removing the gate polysilicon layer of the overlay vernier region while regulating an etching process so that the overlay vernier region has a superior shape.
摘要翻译：一种制造半导体器件的方法包括：形成用于在栅极形成工艺中形成的覆盖游标区上的栅极多晶硅层，形成用于涂覆单元区域的键开口掩模，并且在调节栅极多晶硅层的同时调整覆盖游标区域蚀刻处理，使得覆盖游标区域具有优异的形状。

6. 发明申请

US20050170336A1 Multifunctional biomaterials as scaffolds for electronic, optical, magnetic, semiconducting, and biotechnological applications 有权
标题翻译：多功能生物材料作为电子，光学，磁性，半导体和生物技术应用的支架
公开(公告)号：US20050170336A1
公开(公告)日：2005-08-04
申请号：US10965227
申请日：2004-10-15
申请人： Angela Belcher , Beau Peelle , Ki Nam
发明人： Angela Belcher , Beau Peelle , Ki Nam
IPC分类号： C07K20060101 , C12N7/00 , C12N15/86 , C12Q1/70 , H01L51/00
CPC分类号： H01L51/0093 , B82Y5/00 , B82Y10/00 , C12N7/00 , C12N15/1037 , C12N2795/14011 , C12N2795/14051 , H01L51/0508 , Y10S977/773 , Y10S977/775 , Y10S977/802 , Y10S977/81
摘要： One-dimensional ring structures form M13 viruses were constructed by two genetic modifications encoding binding peptides and synthesis of a heterobifunctional linker molecule. The bifunctional viruses displayed an anti-streptavidin peptide and hexahistidine (SEO ID NO: 4) peptide at opposite ends of the virus as pIII and pIX fusions. Stoichiometic addition of the streptavidin-NiNTA linker molecule led to the reversible formation of virus-based nanorings with circumferences corresponding to lengths of the packagable DNAs. These virus-based ring structures can be further engineered to nucleate inorganic materials and form metallic, magnetic, or semiconductor nanorings using trifunctionalized viruses.
摘要翻译：通过编码结合肽的两种遗传修饰和异双功能连接子分子的合成构建形成M13病毒的一维环结构。双功能病毒在病毒的相对端显示抗链亲和素肽和六组氨酸（SEO ID NO：4）肽作为pIII和pIX融合物。链霉亲和素-NiNTA连接分子的化学添加导致可逆形成基于病毒的纳米片，其周长对应于可包装的DNA的长度。这些基于病毒的环结构可以进一步工程化以使无机材料成核，并使用三官能化病毒形成金属，磁性或半导体纳米片。

7. 发明申请

US20050024493A1 Surveillance device 审中-公开
标题翻译：监控设备
公开(公告)号：US20050024493A1
公开(公告)日：2005-02-03
申请号：US10844206
申请日：2004-05-12
申请人： Ki Nam
发明人： Ki Nam
IPC分类号： G08B13/196 , H04N5/225 , H04N7/18
CPC分类号： H04N5/23238 , G08B13/19619 , G08B13/19628 , G08B13/19697 , H04N5/2252
摘要： A surveillance device that may be propelled, such as by throwing, into a room or other area for surveillance purposes. The device has an enclosure containing a solid state camera, a wireless transmitter, and a battery. The device is configured to seek a predetermined at rest position, and includes an omnidirectional imaging system positioned relative to the camera to provide a panoramic view of the immediate area to the camera for transmission when in the predetermined at rest position. Various embodiments are disclosed, including embodiments of different shapes, embodiments using one-way and two-way communication, embodiments using visible imaging and infrared imaging, embodiments including one or more microphones and/or other sensors and embodiments including direction sensing and communication capabilities.
摘要翻译：可能被推进的监视装置，例如通过投掷到房间或其他区域进行监视。该设备具有包含固态照相机，无线发射器和电池的外壳。该装置被配置成寻找预定的静止位置，并且包括相对于照相机定位的全向成像系统，以在处于预定的静止位置时向照相机提供立体区域的全景图以进行传播。公开了各种实施例，包括不同形状的实施例，使用单向和双向通信的实施例，使用可见成像和红外成像的实施例，包括一个或多个麦克风和/或其他传感器的实施例以及包括方向感测和通信能力的实施例。

8. 发明申请

US20060257791A1 Method for forming conductive line of semiconductor device 审中-公开
标题翻译：形成半导体器件导线的方法
公开(公告)号：US20060257791A1
公开(公告)日：2006-11-16
申请号：US11169943
申请日：2005-06-30
申请人： Seung Kim , Ki Nam
发明人： Seung Kim , Ki Nam
IPC分类号： G03F7/26
CPC分类号： G03F7/405 , G03F7/40 , G03F7/427 , H01L21/31116 , H01L21/31138 , H01L21/32137
摘要： A method for forming a conductive line of a semiconductor device is disclosed. The method includes forming a photoresist film pattern defining a conductive line region on a stacked structure of a conductive layer and a hard mask layer disposed on a semiconductor substrate, etching the hard mask layer using the photoresist film pattern as an etching mask to form a hard mask layer pattern, removing the photoresist film pattern, and etching the conductive layer using the hard mask layer pattern as an etching mask to form a conductive layer pattern, wherein the etching process and the removal process are performed via an in-situ process.
摘要翻译：公开了一种用于形成半导体器件的导线的方法。该方法包括在导电层和设置在半导体衬底上的硬掩模层的叠层结构上形成限定导电线区域的光致抗蚀剂膜图案，使用光致抗蚀剂膜图案蚀刻硬掩模层作为蚀刻掩模以形成硬掩模层图案，去除光致抗蚀剂膜图案，并使用硬掩模层图案蚀刻导电层作为蚀刻掩模以形成导电层图案，其中蚀刻工艺和去除工艺通过原位工艺进行。

9. 发明申请

US20060141796A1 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20060141796A1
公开(公告)日：2006-06-29
申请号：US11120531
申请日：2005-05-02
申请人： Jae Kim , Ki Nam
发明人： Jae Kim , Ki Nam
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/02057 , H01L27/10876 , H01L29/1037
摘要： The method includes forming an isolation film on a silicon substrate to define an active region; forming an antireflective film on an entire surface of the substrate containing the isolation film; forming a photosensitive film pattern on the antireflective film while exposing a portion of the isolation film or the active region adjacent to the isolation film; etching the antireflective film, the isolation film, and the substrate by using the photosensitive film pattern as an etching mask to recess the active region; performing a light etch treatment on a substrate resultant without removing the remaining photosensitive film pattern, so as to remove a damaged layer and a carbon pollutant formed on a surface of the recessed active region; and removing the remaining photosensitive film pattern and the antireflective film.
摘要翻译：该方法包括在硅衬底上形成隔离膜以限定有源区; 在包含隔离膜的基板的整个表面上形成抗反射膜; 在防反射膜上形成感光膜图案，同时使隔离膜的一部分或与隔离膜相邻的有源区域暴露; 通过使用感光膜图案作为蚀刻掩模来蚀刻抗反射膜，隔离膜和基板以使有源区域凹陷; 对基板结果进行光蚀刻处理，而不去除剩余的感光膜图案，以去除在凹入的有源区域的表面上形成的损伤层和碳污染物; 并除去剩余的感光膜图案和抗反射膜。

10. 发明申请

US20060110910A1 Method for forming landing plug poly of semiconductor device 审中-公开
标题翻译：用于形成半导体器件的着陆塞多晶的方法
公开(公告)号：US20060110910A1
公开(公告)日：2006-05-25
申请号：US11123557
申请日：2005-05-06
申请人： Jung Lee , Ki Nam
发明人： Jung Lee , Ki Nam
IPC分类号： H01L21/4763 , H01L21/44 , H01L21/336
CPC分类号： H01L21/76895 , H01L21/28061 , H01L21/76897
摘要： Disclosed is a method for forming a landing plug poly of a semiconductor device. In such a method, there is provided a substrate formed with gates, each of which has a nitride film as a gate hard mask and nitride film spacers. An insulating interlayer is formed over the entire surface of the substrate and then is subjected to CMP until the nitride film is exposed. A material film having etching selectivity to the nitride film is deposited on the resultant substrate structure. The material film is patterned and the exposed insulating interlayer portions are etched to form a landing plug contact which simultaneously exposes several gates and substrate regions between the gates. A polysilicon film is deposited to fill up the landing plug contact. Finally, the polysilicon film is subjected to CMP until the gates are exposed.
摘要翻译：公开了一种用于形成半导体器件的着陆塞多晶的方法。在这种方法中，提供了形成有栅极的基板，每个栅极具有氮化膜作为栅极硬掩模和氮化物膜间隔物。在衬底的整个表面上形成绝缘中间层，然后进行CMP直到氮化膜露出。在所得到的基板结构上沉积具有对氮化物膜的蚀刻选择性的材料膜。对材料膜进行图案化，并且暴露的绝缘夹层部分被蚀刻以形成同时在栅极之间暴露几个栅极和衬底区域的着色插头接触。沉积多晶硅膜以填满着陆插头触点。最后，对多晶硅膜进行CMP直到栅极暴露。

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