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1. 发明授权

US5648006A Heater for chemical vapor deposition equipment 失效
标题翻译：化学气相沉积设备加热器
公开(公告)号：US5648006A
公开(公告)日：1997-07-15
申请号：US385968
申请日：1995-02-09
申请人： Suk-Ki Min , Moo Sung Kim , Seong-Il Kim , Yong Kim
发明人： Suk-Ki Min , Moo Sung Kim , Seong-Il Kim , Yong Kim
IPC分类号： H05B3/20 , C23C16/46 , H05B3/16 , H05B3/68
CPC分类号： C23C16/46 , H05B3/16
摘要： A heater for a chemical vapor deposition equipment includes a meandering heating wire made of either molybdenum or tungsten and having a diameter of about 1 mm. The heating wire is laid on a heater disc that is made of either molybdenum, tungsten or ceramic. The heater disc is holed at its center for receiving a susceptor rotating shaft. A plurality of heating wire fixtures support the heating wire on the heater disc while spacing the heating wire from the heater disc at an interval, thus to prevent the heating wire from directly contacting the heater disc. Each of the heating wire fixtures is provided with a pair of lateral through holes, that is, a heating wire hole formed in an upper section of each fixture and a fixing wire hole formed in a lower section of each fixture. The heater also includes heat resisting plates that are made of either molybdenum or tungsten and placed on the bottom surface and the side surface of the heater disc for preventing side and downward radiation of the heat of the heating wire. The heater heats a substrate to a high temperature not less than 1500.degree. C. and achieves an excellent heating efficiency.
摘要翻译：用于化学气相沉积设备的加热器包括由钼或钨制成并具有约1mm直径的曲折加热丝。加热丝放置在由钼，钨或陶瓷制成的加热盘上。加热盘在其中心处是用于接收基座旋转轴的。多个加热线夹具支撑加热盘上的加热线，同时间隔加热丝与加热盘间隔开，从而防止加热线直接接触加热盘。每个加热线夹具设置有一对横向通孔，即，形成在每个固定装置的上部中的加热丝孔和形成在每个夹具的下部中的固定线孔。加热器还包括由钼或钨制成并且放置在加热盘的底表面和侧表面上的耐热板，用于防止加热丝的热量的侧向和向下辐射。加热器将基板加热至不低于1500℃的高温，并实现优良的加热效率。

2. 发明授权

US5888294A Epitaxial growth rate varying method for side surface of semiconductor pattern 失效
标题翻译：半导体图案侧面的外延生长速率变化方法
公开(公告)号：US5888294A
公开(公告)日：1999-03-30
申请号：US609323
申请日：1996-03-01
申请人： Suk-Ki Min , Moo Sung Kim , Yong Kim
发明人： Suk-Ki Min , Moo Sung Kim , Yong Kim
IPC分类号： H01L21/205 , C30B25/02 , H01L21/20 , H01L29/06 , H01S5/00 , C30B25/14
CPC分类号： B82Y30/00 , B82Y10/00 , B82Y20/00 , C30B25/02 , C30B29/42
摘要： An improved epitaxial growth rate varying method for a side surface of a semiconductor pattern capable of controlling a growth rate of a side surface of a semiconductor pattern by controlling the amount of CCl.sub.4 gas supplied when forming an epitaxial layer on a patterned GaAs substrate in a metalorganic chemical deposition method, thus fabricating a desired quantum wire, and which is characterized by controlling a side-surface growth rate of an epitaxial layer in accordance with the CCl.sub.4 doping gas flow rate while an epitaxial layer is formed on a patterned GaAs substrate in a metalorganic chemical deposition method and in achieving a desired substantial flatness.
摘要翻译：一种用于半导体图案的侧表面的改进的外延生长速率变化方法，其能够通过控制在金属有机物的图案化GaAs衬底上形成外延层时供应的CCl 4气体的量来控制半导体图案的侧表面的生长速率化学沉积方法，从而制造所需的量子线，其特征在于根据CCl4掺杂气体流速控制外延层的侧面生长速率，同时在金属有机物的图案化GaAs衬底上形成外延层化学沉积方法和实现期望的实质平坦度。

3. 发明授权

US10556166B2 Automatic batting training apparatus 有权
公开(公告)号：US10556166B2
公开(公告)日：2020-02-11
申请号：US16175855
申请日：2018-10-31
申请人： Moo Sung Kim
发明人： Moo Sung Kim
IPC分类号： A63B69/00 , A63B102/18 , A63B67/06
摘要： An automatic batting training apparatus includes: a bottom part; a hopper assembly disposed on one side of the bottom part to sequentially discharge a plurality of balls stored therein; and a driving assembly disposed on the other side of the bottom part and including a transfer module adapted to transfer the balls discharged from the hopper assembly in a vertical direction and an ascending/descending module having a tee stand disposed movable upward and downward in such a manner as to allow the balls received from the transfer module to be seated one by one onto top thereof to perform tee batting.

4. 发明授权

US08441856B2 Method of providing an operating voltage in a memory device and a memory controller for the memory device 有权
公开(公告)号：US08441856B2
公开(公告)日：2013-05-14
申请号：US13289282
申请日：2011-11-04
申请人： Moo Sung Kim , Wook Ghee Hahn
发明人： Moo Sung Kim , Wook Ghee Hahn
IPC分类号： G11C16/04
CPC分类号： G11C16/26 , G11C11/5642 , G11C16/0483 , G11C16/10
摘要： A method of providing an operating voltage in a memory device includes applying a read voltage to a selected word line while applying a first pass voltage to at least one unselected word line among word lines adjacent to the selected word line; and while applying a second pass voltage to the remaining unselected word lines (other than the at least one unselected word line to which the first pass voltage is applied). The level of the first pass voltage is higher than the level of the second pass voltage. The level of the first pass voltage may be set based on the level of the read voltage.

5. 发明授权

US07507814B2 Process for preparation of imipenem 有权
标题翻译：亚胺培南的制备方法
公开(公告)号：US07507814B2
公开(公告)日：2009-03-24
申请号：US10563250
申请日：2004-12-09
申请人： Hyun Seop Bae , Tae Seop Hwang , Chan Yong Ahn , Chang Hoon Oh , Moo Sung Kim
发明人： Hyun Seop Bae , Tae Seop Hwang , Chan Yong Ahn , Chang Hoon Oh , Moo Sung Kim
IPC分类号： C07D477/20 , C07D477/18
CPC分类号： C07D477/06 , C07D477/20 , C07D487/04
摘要： The invention provides a novel compound of Formula II which is useful in the preparation of imipenem monohydrate of Formula I, wherein R1 is a p-nitrobenzyl or p-methoxybenzyl group; and R2 and R3 may be identical to or different from each other and are each independently a C1-6alkyl or aryl group, or a derivative thereof, and a process for preparing the compound of Formula II by coupling (5R,6S) p-nitrobenzyl-3-(diphenylphosphono)-6-[(1R)-1-hydroxyethyl]-1-azabicyclo[3.2.0]hept-2-ene-7-one-2-carboxylate with 2-aminoetahnethiol hydrocloride in the presence of a base, followed by a reaction with a ketone. Further, the invention provides a process for preparing the compound of Formula I by reacting a compound of Formula II with isopropylformimidate or benzylformimidate in the presence of a base, followed by hydrogenation, separation and crystallization.
摘要翻译：本发明提供了一种新的式II化合物，其可用于制备式I的亚胺培南一水合物，其中R 1为对硝基苄基或对甲氧基苄基; 并且R 2和R 3可以彼此相同或不同，并且各自独立地为C 1-6烷基或芳基或其衍生物，以及通过将（5R，6S）对硝基苄基 -3-（二苯基膦酰基）-6 - [（1R）-1-羟乙基] -1-氮杂双环[3.2.0]庚-2-烯-7-酮-2-羧酸叔丁酯与2-氨基乙脑二醇氢氯化物碱，然后与酮反应。此外，本发明提供了通过在碱的存在下使式II化合物与异丙基甲酰亚胺酯或苄基甲酰亚氨酸酯反应，然后氢化，分离和结晶来制备式I化合物的方法。

6. 发明授权

US10245489B2 Automatic batting tee apparatus 有权
公开(公告)号：US10245489B2
公开(公告)日：2019-04-02
申请号：US15028598
申请日：2016-02-16
申请人： Moo Sung Kim
发明人： Moo Sung Kim
IPC分类号： A63B69/00 , A63B69/40 , A63B47/00
摘要： The present invention relates to an automatic batting tee apparatus that includes a ball storage unit for continuously feeding balls therein for batting; a lifting unit for putting the balls discharged from the ball storage unit onto an upper end of a tee rod for T-batting; and a feeding unit disposed between the ball storage unit and the lifting unit. The apparatus can smoothly and quickly feed balls, particularly, baseballs to the lifting unit with the tee rod, using the ball storage unit having a variable internal space and rotary equipment. The automatic batting tee apparatus according to an embodiment of the present invention allows for not only batting practice, but fielding practice by a cylinder unit.

7. 发明申请

US20130250691A1 METHOD OF PROVIDING AN OPERATING VOLTAGE IN A MEMORY DEVICE AND A MEMORY CONTROLLER FOR THE MEMORY DEVICE 审中-公开
公开(公告)号：US20130250691A1
公开(公告)日：2013-09-26
申请号：US13892427
申请日：2013-05-13
申请人： Moo Sung Kim , Wook Ghee Hahn
发明人： Moo Sung Kim , Wook Ghee Hahn
IPC分类号： G11C16/10
CPC分类号： G11C16/26 , G11C11/5642 , G11C16/0483 , G11C16/10
摘要： A method of providing an operating voltage in a memory device includes applying a read voltage to a selected word line while applying a first pass voltage to at least one unselected word line among word lines adjacent to the selected word line; and while applying a second pass voltage to the remaining unselected word lines (other than the at least one unselected word line to which the first pass voltage is applied). The level of the first pass voltage is higher than the level of the second pass voltage. The level of the first pass voltage may be set based on the level of the read voltage.

8. 发明授权

US08472245B2 Nonvolatile memory device, system and programming method with dynamic verification mode selection 有权
公开(公告)号：US08472245B2
公开(公告)日：2013-06-25
申请号：US13012037
申请日：2011-01-24
申请人： Moo Sung Kim
发明人： Moo Sung Kim
IPC分类号： G11C11/34
CPC分类号： G11C16/10 , G11C16/0483 , G11C16/3454 , G11C16/3459
摘要： Nonvolatile memory devices, memory systems and related methods of operating nonvolatile memory devices are presented. During a programming operation, the nonvolatile memory device is capable of using bit line forcing, and is also capable of selecting a verification mode for use during a verification operation from a group of verification modes on the basis of an evaluated programming condition.

9. 发明授权

US08441859B2 Flash memory device and method of programming same 有权
标题翻译：闪存设备及其编程方法相同
公开(公告)号：US08441859B2
公开(公告)日：2013-05-14
申请号：US12914127
申请日：2010-10-28
申请人： Moo Sung Kim , Han-Jun Lee
发明人： Moo Sung Kim , Han-Jun Lee
IPC分类号： G11C16/04
CPC分类号： G11C16/10 , G11C16/3404
摘要： A flash memory device includes a memory cell array made up of memory cells arranged in rows and columns. A first page of data is programmed in selected memory cells of the memory cell array, and a second page of data is subsequently programmed in the selected memory cells. The first page of data is programmed using a program voltage having a first start value, and the second page of data is programmed using a program voltage having a second start value determined by a programming characteristic of the selected memory cells.
摘要翻译：闪速存储器件包括由以行和列排列的存储单元组成的存储单元阵列。数据的第一页被编程在存储单元阵列的选定的存储单元中，随后在所选存储单元中编程第二页数据。使用具有第一起始值的编程电压对数据的第一页进行编程，并且使用具有由所选存储单元的编程特性确定的第二起始值的编程电压对第二数据页进行编程。

10. 发明授权

US08432734B2 Nonvolatile memory device and system and related method of operation 有权
标题翻译：非易失性存储器件及系统及相关操作方法
公开(公告)号：US08432734B2
公开(公告)日：2013-04-30
申请号：US12780988
申请日：2010-05-17
申请人： Moo Sung Kim
发明人： Moo Sung Kim
IPC分类号： G11C16/04
CPC分类号： G11C11/5628 , G11C16/0483 , G11C16/3454
摘要： A nonvolatile memory device detects a first memory cell to be successfully programmed in a program operation for multiple memory cells connected to a wordline, and then detects a number of program loops required to successfully program the remaining memory cells connected to the wordline. An initial program voltage of subsequent program operations is then adjusted based on the detected number of loops.
摘要翻译：非易失性存储器件检测在与字线连接的多个存储单元的编程操作中成功编程的第一存储器单元，然后检测成功编程连接到字线的剩余存储单元所需的程序循环数。然后根据检测到的循环次数来调整后续程序操作的初始编程电压。

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