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1. 发明授权

US6079426A Method and apparatus for determining the endpoint in a plasma cleaning process 失效
标题翻译：用于确定血浆清洁过程中的终点的方法和装置
公开(公告)号：US6079426A
公开(公告)日：2000-06-27
申请号：US887165
申请日：1997-07-02
申请人： Sudhakar Subrahmanyam , Tsutomu Tanaka , Mukul Kelkar
发明人： Sudhakar Subrahmanyam , Tsutomu Tanaka , Mukul Kelkar
IPC分类号： H05H1/46 , C23C16/44 , C23G5/028 , C23G5/04 , H01J37/32 , H01L21/205 , H01L21/31 , B08B6/00 , G01L21/30
CPC分类号： H01J37/32935 , C23C16/4405 , H01J37/32963 , H01J2237/335 , Y10S156/916
摘要： Apparatus and methods are disclosed for utilizing a plasma cleaning operation of a CVD system incorporating cleaning process endpoint detection. In one embodiment, the cleaning process is performed at a constant exhaust capacity and the endpoint detection is in response to a specified rate of change of chamber pressure. In another embodiment, a servo-controlled exhaust system maintains a controlled chamber pressure and the endpoint detection is in response to a specified control signal. In a preferred embodiment, nitrogen trifluoride is converted into a plasma containing free fluorine radicals in a magnetron-powered remote microwave plasma generator. The remotely produced free fluorine radicals are used to remove silicon nitride deposits from a substrate processing chamber. The use of such a remote plasma system provides an efficient cleaning process that takes as little as half the time compared to similar in situ plasma cleaning processes. The incorporation of endpoint detection provides optimal cleaning time for the remote plasma cleaning process.
摘要翻译：公开了利用包含清洁过程端点检测的CVD系统的等离子体清洁操作的装置和方法。在一个实施例中，清洁过程以恒定的排气量执行，并且端点检测响应于室压力的指定变化率。在另一个实施例中，伺服控制的排气系统保持受控的室压力，并且端点检测响应于指定的控制信号。在优选的实施方案中，在由磁控管供电的远程微波等离子体发生器中将三氟化氮转化成含有游离氟自由基的等离子体。远程产生的自由氟基团用于从衬底处理室去除氮化硅沉积物。使用这样的远程等离子体系统提供了有效的清洁过程，与类似的原位等离子体清洁过程相比，其需要的时间只有时间的一半。结合端点检测为远程等离子体清洗过程提供了最佳的清洗时间。

2. 发明授权

US06121163A Method and apparatus for improving the film quality of plasma enhanced CVD films at the interface 失效
标题翻译：用于改善界面处等离子体增强CVD膜的膜质量的方法和装置
公开(公告)号：US06121163A
公开(公告)日：2000-09-19
申请号：US599270
申请日：1996-02-09
申请人： Anand Gupta , Virendra V. S. Rana , Amrita Verma , Mohan K. Bhan , Sudhakar Subrahmanyam
发明人： Anand Gupta , Virendra V. S. Rana , Amrita Verma , Mohan K. Bhan , Sudhakar Subrahmanyam
IPC分类号： C30B29/18 , C23C16/40 , C23C16/50 , H01L21/205 , H01L21/316 , H05H1/24
CPC分类号： H01J37/32082 , C23C16/401 , H01L21/02131 , H01L21/02274 , H01L21/31629
摘要： A method and apparatus for depositing a layer having improved film quality at an interface. The method includes the steps of introducing an inert gas into a processing chamber and forming a plasma from the inert gas by applying RF power to the chamber at a selected rate of increase. After RF power has reached full power, a process gas including a reactant gas is introduced to deposit the layer. In a preferred embodiment, the reactant gas is tetraethoxysilane. In another preferred embodiment, the process gas further includes fluorine.
摘要翻译：一种用于在界面处沉积具有改进的膜质量的层的方法和装置。该方法包括以下步骤：将惰性气体引入处理室并通过以选定的增加的速率向腔室施加RF功率从惰性气体形成等离子体。在RF功率达到全功率之后，引入包括反应气体的处理气体以沉积该层。在优选的实施方案中，反应气体是四乙氧基硅烷。在另一优选实施方案中，工艺气体还包括氟。

3. 发明授权

US6001728A Method and apparatus for improving film stability of halogen-doped silicon oxide films 失效
公开(公告)号：US6001728A
公开(公告)日：1999-12-14
申请号：US616707
申请日：1996-03-15
申请人： Mohan Krishan Bhan , Sudhakar Subrahmanyam , Anand Gupta , Viren V. S. Rana
发明人： Mohan Krishan Bhan , Sudhakar Subrahmanyam , Anand Gupta , Viren V. S. Rana
IPC分类号： H01L21/31 , C23C16/40 , H01L21/316
CPC分类号： H01L21/02131 , C23C16/401 , H01L21/02274 , H01L21/31629 , Y10T29/41
摘要： A method and apparatus for improving film stability of a halogen-doped silicon oxide layer. The method includes the step of introducing helium along with the process gas that includes silicon, oxygen and a halogen element. Helium is introduced at an increased rate to stabilize the deposited layer. In a preferred embodiment, the halogen-doped film is a fluorosilicate glass film and TEOS is employed as a source of silicon in the process gas. In still another preferred embodiment, SiF.sub.4 is employed as the fluorine source for the FSG film.

4. 发明授权

US5827785A Method for improving film stability of fluorosilicate glass films 失效
标题翻译：提高氟硅酸盐玻璃膜的膜稳定性的方法
公开(公告)号：US5827785A
公开(公告)日：1998-10-27
申请号：US736555
申请日：1996-10-24
申请人： Mohan Krishan Bhan , Sudhakar Subrahmanyam , Anand Gupta , Virendra V. S. Rana
发明人： Mohan Krishan Bhan , Sudhakar Subrahmanyam , Anand Gupta , Virendra V. S. Rana
IPC分类号： H01L21/31 , C23C16/40 , C23C16/505 , C23C16/52 , H01L21/316
CPC分类号： H01L21/31625 , C23C16/401 , C23C16/505 , C23C16/52 , H01L21/02131 , H01L21/02274
摘要： A method and apparatus for improving film stability of a halogen-doped silicon oxide layer. The method includes the step of introducing a process gas including a first halogen source and a second halogen source, different from the first halogen source, into a deposition chamber along with silicon and oxygen sources. A plasma is then formed from the process gas to deposit a halogen-doped layer over a substrate disposed in the chamber. It is believed that the introduction of the additional halogen source enhances the etching effect of the film. The enhanced etching component of the film deposition improves the film's gap-fill capabilities and helps stabilizes the film. In a preferred embodiment, the halogen-doped film is a fluorosilicate glass film, SiF.sub.4 is employed as the first halogen source, TEOS is employed as a source of silicon and the second halogen source is either F.sub.2 or NF.sub.3.
摘要翻译：一种改善卤素掺杂氧化硅层的膜稳定性的方法和装置。该方法包括将含有不同于第一卤素源的第一卤素源和第二卤素源的处理气体与硅和氧源一起引入沉积室的步骤。然后从处理气体形成等离子体，以在设置在腔室中的衬底上沉积卤素掺杂层。据信引入额外的卤素源增强了膜的蚀刻效果。膜沉积的增强的蚀刻成分改善了膜的间隙填充能力并且有助于使膜稳定化。在优选实施例中，掺杂卤素的膜是氟硅酸盐玻璃膜，SiF 4用作第一卤素源，TEOS用作硅源，第二卤素源是F2或NF3。

5. 发明授权

US06223685B1 Film to tie up loose fluorine in the chamber after a clean process 有权
标题翻译：在清洁过程之后，电影将室内的松散的氟结合起来
公开(公告)号：US06223685B1
公开(公告)日：2001-05-01
申请号：US09452551
申请日：1999-12-01
申请人： Anand Gupta , Mohan Bhan , Sudhakar Subrahmanyam
发明人： Anand Gupta , Mohan Bhan , Sudhakar Subrahmanyam
IPC分类号： C23C1600
CPC分类号： C23C14/564 , C23C16/4404 , C23C16/5096 , C23C16/52 , H01J37/32477 , H01J37/32862 , H01L21/02131 , H01L21/02164 , H01L21/02274 , H01L21/31612 , Y10S438/905
摘要： An improved method of reducing the level of contaminants (e.g., fluorine) absorbed in films deposited within a substrate processing chamber. A seasoning layer is deposited within the substrate processing chamber to cover contaminants that may be absorbed within walls or insulation areas of the chamber interior. The deposited seasoning layer is more stable than prior art seasoning layers and is thus less likely to release the absorbed contaminants into the substrate processing chamber during the subsequent deposition of films. In a preferred embodiment, the seasoning layer is formed from a mixed frequency PECVD process in which the low frequency RF signal is supplied at a high power level to increase ion bombardment and enhance film stability. The increased bombardment favors the formation of stable SiF bonds between silicon and fluorine atoms in the lattice structure of the film rather than unstable SiF2 or other bonds. When residual fluorine atoms (e.g., fluorine atoms absorbed within the chamber walls) are incorporated into the deposited seasoning layer, fewer loosely bonded fluorine atoms are incorporated into the layer than in prior art silicon oxide seasoning layers. Fewer loosely bonded fluorine atoms in the seasoning film results in fewer contaminants being incorporated into films deposited over substrates in subsequent processing steps.
摘要翻译：一种降低在衬底处理室内沉积的膜中吸收的污染物（例如氟）的水平的改进方法。在基材处理室内沉积调味料层以覆盖可能被吸收在室内部的壁或绝缘区域内的污染物。沉积的调味剂层比现有技术的调味料层更稳定，因此在随后的膜沉积期间不太可能将吸收的污染物释放到基材处理室中。在优选实施例中，调味层由混合频率PECVD工艺形成，其中以高功率水平提供低频RF信号以增加离子轰击并提高膜的稳定性。增加的轰击有利于在膜的晶格结构中硅和氟原子之间形成稳定的SiF键，而不是不稳定的SiF 2或其它键。当剩余的氟原子（例如在室壁内吸收的氟原子）被并入沉积的调味层中时，与现有技术的氧化硅调味层相比，较少的松散键合的氟原子被掺入到该层中。在调味膜中较少松散粘合的氟原子导致在随后的加工步骤中将沉积在基材上的薄膜中的污染物掺入较少。

6. 发明授权

US6090167A Method and apparatus for improving film stability of halogen-doped silicon oxide films 有权
标题翻译：用于提高卤素掺杂氧化硅膜的膜稳定性的方法和装置
公开(公告)号：US6090167A
公开(公告)日：2000-07-18
申请号：US413282
申请日：1999-10-06
申请人： Mohan Krishan Bhan , Sudhakar Subrahmanyam , Anand Gupta , Viren V. S. Rana
发明人： Mohan Krishan Bhan , Sudhakar Subrahmanyam , Anand Gupta , Viren V. S. Rana
IPC分类号： H01L21/31 , C23C16/40 , H01L21/316 , C23C16/00
CPC分类号： H01L21/02131 , C23C16/401 , H01L21/02274 , H01L21/31629 , Y10T29/41
摘要： A method and apparatus for improving film stability of a halogen-doped silicon oxide layer. The method includes the step of introducing helium along with the process gas that includes silicon, oxygen and a halogen element. Helium is introduced at an increased rate to stabilize the deposited layer. In a preferred embodiment, the halogen-doped film is a fluorosilicate glass film and TEOS is employed as a source of silicon in the process gas. In still another preferred embodiment, SiF.sub.4 is employed as the fluorine source for the FSG film.
摘要翻译：一种改善卤素掺杂氧化硅层的膜稳定性的方法和装置。该方法包括与包括硅，氧和卤素元素的工艺气体一起引入氦的步骤。以增加的速率引入氦以稳定沉积层。在优选实施例中，卤素掺杂膜是氟硅酸盐玻璃膜，TEOS用作工艺气体中的硅源。在另一优选实施方案中，使用SiF 4作为FSG膜的氟源。

7. 发明授权

US06291028B1 Method and apparatus for improving the film quality of plasma enhanced CVD films at the interface 有权
标题翻译：用于改善界面处等离子体增强CVD膜的膜质量的方法和装置
公开(公告)号：US06291028B1
公开(公告)日：2001-09-18
申请号：US09608786
申请日：2000-06-30
申请人： Anand Gupta , Virendra V. S. Rana , Amrita Verma , Mohan K. Bhan , Sudhakar Subrahmanyam
发明人： Anand Gupta , Virendra V. S. Rana , Amrita Verma , Mohan K. Bhan , Sudhakar Subrahmanyam
IPC分类号： C23C16505
CPC分类号： H01J37/32082 , C23C16/401 , H01L21/02131 , H01L21/02274 , H01L21/31629
摘要： A method and apparatus for depositing a layer having improved film quality at an interface. The method includes the steps of introducing an inert gas into a processing chamber and forming a plasma from the inert gas by applying RF power to the chamber at a selected rate of increase. After RF power has reached full power, a process gas including a reactant gas is introduced to deposit the layer. In a preferred embodiment, the reactant gas is tetraethoxysilane. In another preferred embodiment, the process gas further includes fluorine.
摘要翻译：一种用于在界面处沉积具有改进的膜质量的层的方法和装置。该方法包括以下步骤：将惰性气体引入处理室并通过以选定的增加的速率向腔室施加RF功率从惰性气体形成等离子体。在RF功率达到全功率之后，引入包括反应气体的处理气体以沉积该层。在优选的实施方案中，反应气体是四乙氧基硅烷。在另一优选实施方案中，工艺气体还包括氟。

8. 发明授权

US06289843B1 Method and apparatus for improving the film quality of plasma enhanced CVD films at the interface 有权
公开(公告)号：US06289843B1
公开(公告)日：2001-09-18
申请号：US09643320
申请日：2000-08-21
申请人： Anand Gupta , Virendra V. S. Rana , Amrita Verma , Mohan K. Bhan , Sudhakar Subrahmanyam
发明人： Anand Gupta , Virendra V. S. Rana , Amrita Verma , Mohan K. Bhan , Sudhakar Subrahmanyam
IPC分类号： C23C1600
CPC分类号： H01J37/32082 , C23C16/401 , H01L21/02131 , H01L21/02274 , H01L21/31629
摘要： A method and apparatus for depositing a layer having improved film quality at an interface. The method includes the steps of introducing an inert gas into a processing chamber and forming a plasma from the inert gas by applying RF power to the chamber at a selected rate of increase. After RF power has reached full power, a process gas including a reactant gas is introduced to deposit the layer. In a preferred embodiment, the reactant gas is tetraethoxysilane. In another preferred embodiment, the process gas further includes fluorine.

9. 发明授权

US6020035A Film to tie up loose fluorine in the chamber after a clean process 失效
标题翻译：在清洁过程之后，电影将室内的松散的氟结合起来
公开(公告)号：US6020035A
公开(公告)日：2000-02-01
申请号：US740381
申请日：1996-10-29
申请人： Anand Gupta , Mohan Bhan , Sudhakar Subrahmanyam
发明人： Anand Gupta , Mohan Bhan , Sudhakar Subrahmanyam
IPC分类号： C23C14/56 , C23C16/44 , C23C16/50 , C23C16/509 , C23C16/52 , H01L21/316 , B05D3/06 , B08B5/00 , H05H1/02
CPC分类号： C23C14/564 , C23C16/4404 , C23C16/5096 , C23C16/52 , H01J37/32477 , H01J37/32862 , H01L21/02131 , H01L21/02164 , H01L21/02274 , H01L21/31612 , Y10S438/905
摘要： An improved method of reducing the level of contaminants (e.g., fluorine) absorbed in films deposited within a substrate processing chamber. A seasoning layer is deposited within the substrate processing chamber to cover contaminants that may be absorbed within walls or insulation areas of the chamber interior. The deposited seasoning layer is more stable than prior art seasoning layers and is thus less likely to release the absorbed contaminants into the substrate processing chamber during the subsequent deposition of films. In a preferred embodiment, the seasoning layer is formed from a mixed frequency PECVD process in which the low frequency RF signal is supplied at a high power level to increase ion bombardment and enhance film stability. The increased bombardment favors the formation of stable SiF bonds between silicon and fluorine atoms in the lattice structure of the film rather than unstable SiF.sub.2 or other bonds. When residual fluorine atoms (e.g., fluorine atoms absorbed within the chamber walls) are incorporated into the deposited seasoning layer, fewer loosely bonded fluorine atoms are incorporated into the layer than in prior art silicon oxide seasoning layers. Fewer loosely bonded fluorine atoms in the seasoning film results in fewer contaminants being incorporated into films deposited over substrates in subsequent processing steps.
摘要翻译：一种降低在衬底处理室内沉积的膜中吸收的污染物（例如氟）的水平的改进方法。在基材处理室内沉积调味料层以覆盖可能被吸收在室内部的壁或绝缘区域内的污染物。沉积的调味剂层比现有技术的调味料层更稳定，因此在随后的膜沉积期间不太可能将吸收的污染物释放到基材处理室中。在优选实施例中，调味层由混合频率PECVD工艺形成，其中以高功率水平提供低频RF信号以增加离子轰击并提高膜的稳定性。增加的轰击有利于在膜的晶格结构中硅和氟原子之间形成稳定的SiF键，而不是不稳定的SiF 2或其它键。当剩余的氟原子（例如在室壁内吸收的氟原子）被并入沉积的调味层中时，与现有技术的氧化硅调味层相比，较少的松散键合的氟原子被掺入到该层中。在调味膜中较少松散粘合的氟原子导致在随后的加工步骤中将沉积在基材上的薄膜中的污染物掺入较少。

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