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1. 发明申请

US20120307857A1 SUPERLUMINESCENT DIODE, METHOD OF MANUFACTURING THE SAME, AND WAVELENGTH-TUNABLE EXTERNAL CAVITY LASER INCLUDING THE SAME 有权
标题翻译：超级亮度二极管，其制造方法和包括其的波长外部腔室激光器
公开(公告)号：US20120307857A1
公开(公告)日：2012-12-06
申请号：US13486698
申请日：2012-06-01
申请人： Su Hwan Oh , Ki-Hong Yoon , Kisoo Kim , O-Kyun Kwon , Oh Kee Kwon , Byung-Seok Choi , Jongbae Kim
发明人： Su Hwan Oh , Ki-Hong Yoon , Kisoo Kim , O-Kyun Kwon , Oh Kee Kwon , Byung-Seok Choi , Jongbae Kim
IPC分类号： H01S5/22 , H01L33/58
CPC分类号： H01L33/005 , B82Y20/00 , G02B6/305 , G02B6/4206 , H01L33/0045 , H01L33/20 , H01L2933/0016 , H01L2933/0058 , H01S5/02216 , H01S5/02284 , H01S5/026 , H01S5/06226 , H01S5/101 , H01S5/1014 , H01S5/141 , H01S5/2213 , H01S5/2224 , H01S5/2231 , H01S5/34306 , H01S2301/176
摘要： Provided are a high-speed superluminescent diode, a method of manufacturing the same, and a wavelength-tunable external cavity laser including the same. The superluminescent diode includes a substrate having an active region and an optical mode size conversion region, waveguides including an ridge waveguide in the active region and a deep ridge waveguide in the optical mode size conversion region connected to the active waveguide, an electrode disposed on the ridge waveguide; planarizing layers disposed on sides of the ridge waveguide and the deep ridge waveguide on the substrate, and a pad electrically connected to the electrode, the pad being disposed on the planarizing layers outside the active waveguide.
摘要翻译：提供了一种高速超发光二极管，其制造方法，以及包括该发光二极管的波长可调谐外腔激光器。超发光二极管包括具有有源区和光模尺寸转换区的衬底，在有源区中包括脊波导的波导和连接到有源波导的光模尺寸转换区中的深脊波导，脊波导; 设置在脊波导的侧面上的平坦化层和基板上的深脊波导，以及与该电极电连接的焊盘，该焊盘设置在有源波导的外侧的平坦化层上。

2. 发明授权

US08989229B2 Superluminescent diode, method of manufacturing the same, and wavelength-tunable external cavity laser including the same 有权
标题翻译：超发光二极管，其制造方法和包括其的波长可调谐外腔激光器
公开(公告)号：US08989229B2
公开(公告)日：2015-03-24
申请号：US13486698
申请日：2012-06-01
申请人： Su Hwan Oh , Ki-Hong Yoon , Kisoo Kim , O-Kyun Kwon , Oh Kee Kwon , Byung-seok Choi , Jongbae Kim
发明人： Su Hwan Oh , Ki-Hong Yoon , Kisoo Kim , O-Kyun Kwon , Oh Kee Kwon , Byung-seok Choi , Jongbae Kim
IPC分类号： H01S5/22 , H01S5/026 , H01S5/14 , H01L33/20 , H01S5/022 , H01S5/062 , H01S5/10 , H01S5/223 , H01S5/343 , H01L33/00 , G02B6/30 , G02B6/42
CPC分类号： H01L33/005 , B82Y20/00 , G02B6/305 , G02B6/4206 , H01L33/0045 , H01L33/20 , H01L2933/0016 , H01L2933/0058 , H01S5/02216 , H01S5/02284 , H01S5/026 , H01S5/06226 , H01S5/101 , H01S5/1014 , H01S5/141 , H01S5/2213 , H01S5/2224 , H01S5/2231 , H01S5/34306 , H01S2301/176
摘要： Provided are a high-speed superluminescent diode, a method of manufacturing the same, and a wavelength-tunable external cavity laser including the same. The superluminescent diode includes a substrate having an active region and an optical mode size conversion region, waveguides including an ridge waveguide in the active region and a deep ridge waveguide in the optical mode size conversion region connected to the active waveguide, an electrode disposed on the ridge waveguide; planarizing layers disposed on sides of the ridge waveguide and the deep ridge waveguide on the substrate, and a pad electrically connected to the electrode, the pad being disposed on the planarizing layers outside the active waveguide.
摘要翻译：提供了一种高速超发光二极管，其制造方法，以及包括该发光二极管的波长可调谐外腔激光器。超发光二极管包括具有有源区和光模尺寸转换区的衬底，在有源区中包括脊波导的波导和连接到有源波导的光模尺寸转换区中的深脊波导，脊波导; 设置在脊波导的侧面上的平坦化层和基板上的深脊波导，以及与该电极电连接的焊盘，该焊盘设置在有源波导的外侧的平坦化层上。

3. 发明授权

US08363685B2 Wavelength tunable external cavity laser beam generating device 有权
标题翻译：波长可调外腔激光束发生装置
公开(公告)号：US08363685B2
公开(公告)日：2013-01-29
申请号：US13016238
申请日：2011-01-28
申请人： Hyun Soo Kim , Ki-Hong Yoon , Kisoo Kim , Byung-Seok Choi , O-Kyun Kwon
发明人： Hyun Soo Kim , Ki-Hong Yoon , Kisoo Kim , Byung-Seok Choi , O-Kyun Kwon
IPC分类号： H01S3/10
CPC分类号： H01S5/142 , B82Y20/00 , H01S5/026 , H01S5/028 , H01S5/1212 , H01S5/1215 , H01S5/125 , H01S5/22 , H01S5/34306
摘要： Provided is a wavelength tunable external cavity laser (laser beam) generating device. The wavelength tunable external cavity laser generating devices includes: an optical amplifier, a comb reflector, and an optical signal processor connected in series on a first substrate; and an external wavelength tunable reflector disposed on a second substrate adjacent to the first substrate and connected to the optical amplifier, wherein the comb reflector includes: a waveguide disposed on the first substrate; a first diffraction grating disposed at one end of the waveguide adjacent to the optical amplifier; and a second diffraction grating disposed at the other end of the waveguide adjacent to the optical signal processor, wherein the optical amplifier, the comb reflector, and the optical signal processor constitute a continuous waveguide.
摘要翻译：提供了一种波长可调谐的外腔激光（激光束）产生装置。所述波长可调外腔激光产生装置包括：串联在第一基板上的光放大器，梳状反射器和光信号处理器; 以及外部波长可调谐反射器，其设置在与所述第一基板相邻并且连接到所述光学放大器的第二基板上，其中所述梳状反射器包括：布置在所述第一基板上的波导; 设置在与光放大器相邻的波导的一端的第一衍射光栅; 以及第二衍射光栅，其设置在与所述光信号处理器相邻的所述波导的另一端处，其中所述光放大器，所述梳状反射器和所述光信号处理器构成连续波导。

4. 发明申请

US20100316383A1 WAVELENGTH DIVISION MULTIPLEXED-PASSIVE OPTICAL NETWORK APPARATUS 审中-公开
标题翻译：波长部分多路无源光网络设备
公开(公告)号：US20100316383A1
公开(公告)日：2010-12-16
申请号：US12582211
申请日：2009-10-20
申请人： Hyun Soo KIM , Kisoo Kim , Dong Churl Kim , Byung-Seok Choi , O-Kyun Kwon , Dae Kon Oh
发明人： Hyun Soo KIM , Kisoo Kim , Dong Churl Kim , Byung-Seok Choi , O-Kyun Kwon , Dae Kon Oh
IPC分类号： H04J14/02
CPC分类号： H04J14/0282
摘要： Provided is a wavelength division multiplexed-passive optical network (WDM-PON) apparatus. The WDM-PON includes an optical source unit, an optical mux, and a chirped Bragg grating. The optical source unit generates an optical signal. The optical mux receives the optical signal from the optical source unit through one end of the optical mux, multiplexes the optical signal, and outputs the multiplexed optical signal. The chirped Bragg grating is connected to the other end of the optical mux. The chirped Bragg grating again reflects the optical signal having passed the optical mux to re-input a certain portion of the optical signal into the optical mux and the optical source unit. The optical mux performs a spectrum slicing on the re-inputted optical signal and operates the optical source unit using a channel wavelength of the optical mux as a main oscillation wavelength.
摘要翻译：提供了一种波分复用无源光网络（WDM-PON）装置。 WDM-PON包括光源单元，光复用器和啁啾布拉格光栅。光源单元产生光信号。光复用器通过光复用器的一端从光源单元接收光信号，复用光信号，并输出复用的光信号。啁啾布拉格光栅连接到光复用器的另一端。啁啾布拉格光栅再次反射已经通过光复用器的光信号，以将光信号的某一部分重新输入光复用器和光源单元。光复用器对重新输入的光信号执行频谱分片，并使用光复用器的信道波长作为主振荡波长来操作光源单元。

5. 发明授权

US08804232B2 Semiconductor optical devices and methods of fabricating the same 有权
标题翻译：半导体光学器件及其制造方法
公开(公告)号：US08804232B2
公开(公告)日：2014-08-12
申请号：US13307067
申请日：2011-11-30
申请人： Dong Churl Kim , Kisoo Kim , Hyun Soo Kim , Byung-seok Choi , O-Kyun Kwon , Jong Sool Jeong , Dae Kon Oh
发明人： Dong Churl Kim , Kisoo Kim , Hyun Soo Kim , Byung-seok Choi , O-Kyun Kwon , Jong Sool Jeong , Dae Kon Oh
IPC分类号： H01S5/10
CPC分类号： H01S5/1028 , H01S5/0265 , H01S5/0425 , H01S5/1003 , H01S5/101 , H01S5/1014 , H01S5/2222 , H01S2301/16
摘要： A semiconductor optical device includes a first mode converting core, a light amplification core, a second mode converting core, and a light modulation core disposed in a first mode converting region, a light amplification region, a second mode converting region, and a light modulating region of a semiconductor substrate, respectively, and a current blocking section covering at least sidewalls and a top surface of the light amplification core. The first mode converting core, the light amplification core, the second mode converting core, and the light modulation core are arranged along one direction in the order named, and are connected to each other in butt joints. The current blocking section includes first, second, and third cladding patterns sequentially stacked. The second cladding pattern is doped with dopants of a first conductivity type, and the first and third cladding patterns are doped with dopants of a second conductivity type.
摘要翻译：半导体光学器件包括第一模式转换核心，光放大核心，第二模式转换核心和设置在第一模式转换区域中的光调制核心，光放大区域，第二模式转换区域和光调制区域，以及至少覆盖光放大芯的侧壁和顶表面的电流阻挡部分。第一模式转换核心，光放大核心，第二模式转换核心和光调制核心按照命名的顺序沿一个方向布置，并且在对接中彼此连接。电流阻挡部分包括顺序层叠的第一，第二和第三包层图案。第二包层图案掺杂有第一导电类型的掺杂剂，并且第一和第三包层图案掺杂有第二导电类型的掺杂剂。

6. 发明申请

US20100092175A1 REFLECTIVE SEMICONDUCTOR OPTICAL AMPLIFIER AND OPTICAL SIGNAL PROCESSING METHOD USING THE SAME 有权
标题翻译：使用它的反射半导体光放大器和光信号处理方法
公开(公告)号：US20100092175A1
公开(公告)日：2010-04-15
申请号：US12367431
申请日：2009-02-06
申请人： Hyun Soo KIM , O-Kyun Kwon , Dong Churl Kim , Byung-Seok Choi , Kisoo Kim , Dae Kon Oh
发明人： Hyun Soo KIM , O-Kyun Kwon , Dong Churl Kim , Byung-Seok Choi , Kisoo Kim , Dae Kon Oh
IPC分类号： H04J14/02 , H01S3/16
CPC分类号： H01S5/50 , H01S5/026 , H01S5/0608 , H01S5/06258 , H01S5/1014 , H01S5/509
摘要： Provided are a semiconductor optical amplifier and an optical signal processing method using the same. The reflective semiconductor optical amplifier includes: an optical signal amplification region operating to allow a downward optical signal incident from the external to obtain a gain; and an optical signal modulation region connected to the optical signal amplification region and generating a modulated optical signal. The downward optical signal is amplified through a cross gain modulation using the modulated optical signal and is outputted as an upward optical signal.
摘要翻译：提供了一种半导体光放大器和使用其的光信号处理方法。反射半导体光放大器包括：光信号放大区域，其操作以允许从外部入射的向下的光信号获得增益; 以及连接到光信号放大区域并产生调制光信号的光信号调制区域。向下的光信号通过使用调制光信号的交叉增益调制进行放大，并作为向上的光信号输出。

7. 发明申请

US20120281274A1 SEMICONDUCTOR OPTICAL DEVICES AND METHODS OF FABRICATING THE SAME 有权
标题翻译：半导体光学器件及其制造方法
公开(公告)号：US20120281274A1
公开(公告)日：2012-11-08
申请号：US13307067
申请日：2011-11-30
申请人： Dong Churl KIM , Kisoo Kim , Hyun Soo Kim , Byung-seok Choi , O-Kyun Kwon , Jong Sool Jeong , Dae Kon Oh
发明人： Dong Churl KIM , Kisoo Kim , Hyun Soo Kim , Byung-seok Choi , O-Kyun Kwon , Jong Sool Jeong , Dae Kon Oh
IPC分类号： H01S5/20 , H01L21/04
CPC分类号： H01S5/1028 , H01S5/0265 , H01S5/0425 , H01S5/1003 , H01S5/101 , H01S5/1014 , H01S5/2222 , H01S2301/16
摘要： A semiconductor optical device includes a first mode converting core, a light amplification core, a second mode converting core, and a light modulation core disposed in a first mode converting region, a light amplification region, a second mode converting region, and a light modulating region of a semiconductor substrate, respectively, and a current blocking section covering at least sidewalls and a top surface of the light amplification core. The first mode converting core, the light amplification core, the second mode converting core, and the light modulation core are arranged along one direction in the order named, and are connected to each other in butt joints. The current blocking section includes first, second, and third cladding patterns sequentially stacked. The second cladding pattern is doped with dopants of a first conductivity type, and the first and third cladding patterns are doped with dopants of a second conductivity type.
摘要翻译：半导体光学器件包括第一模式转换核心，光放大核心，第二模式转换核心和设置在第一模式转换区域中的光调制核心，光放大区域，第二模式转换区域和光调制区域，以及至少覆盖光放大芯的侧壁和顶表面的电流阻挡部分。第一模式转换核心，光放大核心，第二模式转换核心和光调制核心按照命名的顺序沿一个方向布置，并且在对接中彼此连接。电流阻挡部分包括顺序层叠的第一，第二和第三包层图案。第二包层图案掺杂有第一导电类型的掺杂剂，并且第一和第三包层图案掺杂有第二导电类型的掺杂剂。

8. 发明授权

US08149503B2 Reflective semiconductor optical amplifier and optical signal processing method using the same 有权
标题翻译：反射半导体光放大器和光信号处理方法使用相同
公开(公告)号：US08149503B2
公开(公告)日：2012-04-03
申请号：US12367431
申请日：2009-02-06
申请人： Hyun Soo Kim , O-Kyun Kwon , Dong Churl Kim , Byung-Seok Choi , Kisoo Kim , Dae Kon Oh
发明人： Hyun Soo Kim , O-Kyun Kwon , Dong Churl Kim , Byung-Seok Choi , Kisoo Kim , Dae Kon Oh
IPC分类号： H01S3/131 , H04J14/02 , H04B10/17
CPC分类号： H01S5/50 , H01S5/026 , H01S5/0608 , H01S5/06258 , H01S5/1014 , H01S5/509
摘要： Provided are a semiconductor optical amplifier and an optical signal processing method using the same. The reflective semiconductor optical amplifier includes: an optical signal amplification region operating to allow a downward optical signal incident from the external to obtain a gain; and an optical signal modulation region connected to the optical signal amplification region and generating a modulated optical signal. The downward optical signal is amplified through a cross gain modulation using the modulated optical signal and is outputted as an upward optical signal.
摘要翻译：提供了一种半导体光放大器和使用其的光信号处理方法。反射半导体光放大器包括：光信号放大区域，其操作以允许从外部入射的向下的光信号获得增益; 以及连接到光信号放大区域并产生调制光信号的光信号调制区域。向下的光信号通过使用调制光信号的交叉增益调制进行放大，并作为向上的光信号输出。

9. 发明授权

US08594469B2 Optical amplifier 有权
标题翻译：光放大器
公开(公告)号：US08594469B2
公开(公告)日：2013-11-26
申请号：US12640627
申请日：2009-12-17
申请人： Byung-Seok Choi , Dae Kon Oh , O-Kyun Kwon , Dong Churl Kim , Kisoo Kim , Hyun Soo Kim
发明人： Byung-Seok Choi , Dae Kon Oh , O-Kyun Kwon , Dong Churl Kim , Kisoo Kim , Hyun Soo Kim
IPC分类号： G02F1/035
CPC分类号： H01S5/50 , G02F1/2955 , G02F2001/0155 , G02F2001/0156 , G02F2202/06 , G02F2202/101 , G02F2202/102 , G02F2203/02 , G02F2203/15 , G02F2203/20 , G02F2203/70
摘要： An optical amplifier includes a passive waveguide region and an active waveguide region. The passive waveguide region is configured to receive an incident optical signal and adjust a mode of the optical signal. The active waveguide region is integrated to the passive waveguide region and configured to perform gain modulation on the optical signal received from the passive waveguide region by changing density of carriers in response to a current applied to the active waveguide region. Internal loss of the active waveguide region is adjusted to produce a resonance effect and thereby to increase bandwidth of the active waveguide. Therefore, the optical amplifier can have a wide bandwidth under a low-current condition.
摘要翻译：光放大器包括无源波导区域和有源波导区域。无源波导区域被配置为接收入射光信号并调整光信号的模式。有源波导区域被集成到无源波导区域，并被配置为响应于施加到有源波导区域的电流改变载波的密度，对从无源波导区域接收的光信号执行增益调制。有源波导区域的内部损耗被调节以产生共振效应，从而增加有源波导的带宽。因此，光放大器可以在低电流条件下具有宽带宽。

10. 发明申请

US20110134513A1 OPTICAL DEVICE MODULE 审中-公开
标题翻译：光学器件模块
公开(公告)号：US20110134513A1
公开(公告)日：2011-06-09
申请号：US12773196
申请日：2010-05-04
申请人： Dong Churl Kim , Byung-seok Choi , Hyun Soo Kim , Kisoo Kim , O-Kyun Kwon , Dae Kon Oh
发明人： Dong Churl Kim , Byung-seok Choi , Hyun Soo Kim , Kisoo Kim , O-Kyun Kwon , Dae Kon Oh
IPC分类号： H01S5/026 , G02B6/26 , G02B6/42
CPC分类号： H01S5/0265 , G02B6/1228 , G02B6/125 , G02B6/2813 , H01S5/1014 , H01S5/1085 , H01S5/50
摘要： Provided is an optical device module that can improve miniaturization and integration. The optical device module includes a semiconductor optical amplifier having a buried structure and including a first active layer buried in a clad layer disposed on a first substrate, an optical modulator in which a sidewall of a second active layer disposed in a direction of the first active layer on a second substrate junctioned to the first substrate is exposed, the optical modulator having a ridge structure, and at least one multi-mode interference coupler in which the second active layer junctioned to the first active layer is buried in the clad layer, the multi-mode interference coupler sharing the second active layer on the second substrate between the optical modulator and the semiconductor optical amplifier and integrated with the second optical device.
摘要翻译：提供了可以改善小型化和集成的光学装置模块。光学器件模块包括具有掩埋结构的半导体光学放大器，并且包括掩埋在第一衬底上的覆盖层中的第一有源层，光调制器，其中第二有源层的侧壁沿着第一有源层暴露在与第一衬底相交的第二衬底上的层，光学调制器具有脊结构，以及至少一个多模干涉耦合器，其中与第一有源层结合的第二有源层被掩埋在覆盖层中，所述多模干涉耦合器在所述光调制器和所述半导体光放大器之间的所述第二基板上共享所述第二有源层并与所述第二光学装置集成。

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