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1. 发明申请

US20100083902A1 Plasma generating device 审中-公开
标题翻译：等离子体发生装置
公开(公告)号：US20100083902A1
公开(公告)日：2010-04-08
申请号：US12585686
申请日：2009-09-22
申请人： Su Hong Kim , Myoung Soo Park , Sung Keun Cho , Doug Yong Sung
发明人： Su Hong Kim , Myoung Soo Park , Sung Keun Cho , Doug Yong Sung
IPC分类号： C23C16/513
CPC分类号： C23C16/4586 , H01J37/321 , H01J37/32522 , H01L21/67069 , H01L21/68785
摘要： A plasma generating device is disclosed, which generates plasma by supplying a bias RF power in the initial state in an inductive coupled plasma (ICP) system. Especially, an insulator which insulates a ground member from a susceptor supplied with the bias RF power is separated into at least two pieces such that the thermal expansion of the insulator can be generated similarly to adjoining parts.
摘要翻译：公开了一种等离子体产生装置，其通过在感应耦合等离子体（ICP）系统中以初始状态提供偏置RF功率来产生等离子体。特别地，将接地构件与供给偏压RF功率的基座绝缘的绝缘体分成至少两个部件，使得绝缘体的热膨胀可以类似于邻接部分产生。

2. 发明申请

US20100048003A1 Plasma processing apparatus and method thereof 审中-公开
标题翻译：等离子体处理装置及其方法
公开(公告)号：US20100048003A1
公开(公告)日：2010-02-25
申请号：US12382326
申请日：2009-03-13
申请人： Doug Yong Sung , Vladimir Volynets , Andrey Ushakov , Min Joon Park , Han Soo Shin
发明人： Doug Yong Sung , Vladimir Volynets , Andrey Ushakov , Min Joon Park , Han Soo Shin
IPC分类号： H01L21/30 , C23C16/54 , C23F1/08 , H01L21/3065
CPC分类号： H01J37/32174 , H01J37/32091
摘要： A plasma processing apparatus using a capacitive coupled plasma (CCP) source requiring a low pressure range of about 25 mT or less and a method thereof are disclosed. Plasma source power may be applied in a pulse mode to either one of upper and lower electrodes in a chamber, which generates plasma and processes a semiconductor substrate, and plasma maintaining power may be continuously applied to the other of the upper and lower electrodes, such that a stable pulse plasma process may be performed in a low pressure range of about 25 mT or less.
摘要翻译：公开了一种使用需要约25mT以下的低压范围的电容耦合等离子体（CCP）源的等离子体处理装置及其方法。等离子体源功率可以以脉冲模式施加到室中的上电极和下电极中的任一个，其产生等离子体并处理半导体衬底，并且等离子体维持功率可以连续地施加到上电极和下电极中的另一个，例如可以在约25mT或更低的低压范围内进行稳定的脉冲等离子体处理。

3. 发明授权

US08062538B2 Etching apparatus and method for semiconductor device 有权
标题翻译：用于半导体器件的蚀刻装置和方法
公开(公告)号：US08062538B2
公开(公告)日：2011-11-22
申请号：US12078177
申请日：2008-03-27
申请人： Doug Yong Sung , Tae-Yong Kwon , Kyung Hyun Han , Kyung Chun Lim , Sang Min Jeong
发明人： Doug Yong Sung , Tae-Yong Kwon , Kyung Hyun Han , Kyung Chun Lim , Sang Min Jeong
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01L21/31144
摘要： Disclosed is an etching method for a semiconductor device. The protecting layer, such as the hydrocarbon layer or the hydrocarbon layer containing phosphorous, is formed on the photoresist layer by using the precursor gas containing no fluorine. Therefore, the etching process enabling the thin photoresist to have a high selectivity can be performed, thereby improving the etching efficiency. The method includes the steps of placing a semiconductor substrate in a chamber, in which a material layer is formed on the semiconductor substrate and a photoresist layer is formed on the material layer, forming a hydrocarbon layer on the photoresist layer by introducing precursor gas containing no fluorine into the chamber and etching an etching target material by introducing etching gas into the chamber.
摘要翻译：公开了半导体器件的蚀刻方法。通过使用不含氟的前体气体，在光致抗蚀剂层上形成保护层，例如烃层或含有磷的烃层。因此，可以进行使光致抗蚀剂具有高选择性的蚀刻工艺，从而提高蚀刻效率。该方法包括以下步骤：将半导体衬底放置在室中，其中在半导体衬底上形成材料层，并在材料层上形成光致抗蚀剂层，在光致抗蚀剂层上形成烃层，引入不含氟进入室，并通过将蚀刻气体引入室来蚀刻蚀刻目标材料。

4. 发明申请

US20090064932A1 Apparatus for HDP-CVD and method of forming insulating layer using the same 审中-公开
标题翻译： HDP-CVD装置及使用其形成绝缘层的方法
公开(公告)号：US20090064932A1
公开(公告)日：2009-03-12
申请号：US12219443
申请日：2008-07-22
申请人： Ki Hyun Kim , Doug Yong Sung , Moon Hyeong Han
发明人： Ki Hyun Kim , Doug Yong Sung , Moon Hyeong Han
IPC分类号： C23C16/22 , C23C16/52
CPC分类号： C23C16/402 , C23C16/45561 , C23C16/52
摘要： Disclosed herein are an apparatus for high-density plasma chemical vapor deposition and a method of forming an insulating layer using the same. The use of the apparatus and method enables efficient formation of the insulating layer in the gap between semiconductor devices with a high aspect ratio by dispersing a total demand amount of gas in the formation process.The high-density plasma chemical vapor deposition apparatus includes a plurality of gas suppliers to supply a gas into a chamber and to form an insulating layer between semiconductor devices, each of the gas suppliers including a gas injection valve to perform an on/off operation and a valve controller to control the on/off operation of the gas injection valve and to disperse a total demand amount of the gas.
摘要翻译：本文公开了一种用于高密度等离子体化学气相沉积的装置和使用其形成绝缘层的方法。使用该装置和方法能够通过在形成过程中分散总需求量的气体而在高纵横比的半导体器件之间的间隙中有效地形成绝缘层。高密度等离子体化学气相沉积设备包括多个气体供应商，以将气体供应到室中并在半导体器件之间形成绝缘层，每个气体供应器包括用于执行开/关操作的气体喷射阀，阀控制器，用于控制气体喷射阀的开/关操作并分散气体的总需求量。

5. 发明申请

US20080314408A1 Plasma etching apparatus and chamber cleaning method using the same 审中-公开
标题翻译：等离子体蚀刻装置和使用其的室清洗方法
公开(公告)号：US20080314408A1
公开(公告)日：2008-12-25
申请号：US12081407
申请日：2008-04-15
申请人： Sang Min Jeong , Doug Yong Sung
发明人： Sang Min Jeong , Doug Yong Sung
IPC分类号： C25F1/00 , H01L21/3065
CPC分类号： H01J37/32862 , H01J37/32091 , H01J37/32165
摘要： The plasma etching apparatus effectively removes an outgrowth caused by the etching in the chamber after performing a fabrication process, and a chamber cleaning method using the plasma etching apparatus. The plasma etching apparatus includes: a chamber in which an etching process of a substrate is conducted using a plasma; upper and lower electrodes arranged in the chamber; a RF power-supply unit which simultaneously applies a RF power to the upper and lower electrodes; and a controller which adjusts a power ratio of the RF power simultaneously applied to the upper and lower electrodes, and controls a plasma distribution for cleaning an inner part of the chamber. As a result, the plasma is evenly formed in the chamber, so that a cleaning efficiency can be maximized.
摘要翻译：等离子体蚀刻装置有效地去除了在进行制造工艺之后由腔室中的蚀刻引起的生长，以及使用等离子体蚀刻装置的腔室清洁方法。等离子体蚀刻装置包括：使用等离子体进行基板的蚀刻处理的室; 布置在腔室中的上下电极; RF电源单元，其向上下电极同时施加RF功率; 以及控制器，其调节同时施加到上电极和下电极的RF功率的功率比，并且控制用于清洁腔室的内部的等离子体分布。结果，等离子体均匀地形成在腔室中，使得清洗效率可以最大化。

6. 发明申请

US20080314318A1 Plasma processing apparatus and method thereof 审中-公开
标题翻译：等离子体处理装置及其方法
公开(公告)号：US20080314318A1
公开(公告)日：2008-12-25
申请号：US12081221
申请日：2008-04-11
申请人： Kyung Hyun Han , Vasily Pashkovskiy , Doug Yong Sung , Sang Min Jeong , Sang Ho Lee
发明人： Kyung Hyun Han , Vasily Pashkovskiy , Doug Yong Sung , Sang Min Jeong , Sang Ho Lee
IPC分类号： H05H1/00 , H05H1/24
CPC分类号： H05H1/46 , H01J37/32091 , H01J37/32165
摘要： Disclosed is a plasma processing apparatus and a method thereof. A plasma processing apparatus includes a chamber for processing a semiconductor substrate by generating plasma, upper and lower electrodes installed in the chamber, a high frequency power supply for supplying high frequency power to the upper and lower electrodes, and a phase controller adjusting a phase difference of the high frequency power supplied to the upper and lower electrodes.
摘要翻译：公开了一种等离子体处理装置及其方法。等离子体处理装置包括：通过产生等离子体处理半导体衬底的腔室，安装在腔室中的上下电极，用于向上下电极提供高频电力的高频电源;以及调节相位差的相位控制器提供给上电极和下电极的高频功率。

7. 发明申请

US20080317965A1 Plasma processing apparatus and method 审中-公开
标题翻译：等离子体处理装置及方法
公开(公告)号：US20080317965A1
公开(公告)日：2008-12-25
申请号：US12081408
申请日：2008-04-15
申请人： Gil Su Son , Doug Yong Sung , Tae Yong Kwon , Kyung Chun Lim
发明人： Gil Su Son , Doug Yong Sung , Tae Yong Kwon , Kyung Chun Lim
IPC分类号： C23C14/32 , C23F1/00
CPC分类号： H01J37/32091 , C23C16/5096 , H01J37/32009 , H01J37/32027 , H01J37/32532
摘要： The plasma processing apparatus for processing a semiconductor substrate using plasma and a method thereof can maintain a steady state simultaneously while maximizing a plasma electron density. The plasma processing apparatus includes: a chamber which generates plasma to process a semiconductor substrate; upper and lower electrodes arranged in the chamber; a DC power-supply unit which applies a DC voltage to either one of the upper and lower electrodes; and a controller which adjusts a power ratio of the DC voltage applied from the DC power-supply unit to either one of the upper and lower electrodes. As a result, the apparatus certainly confines electrons, so that the electrodes are not emitted from the plasma, resulting in a maximized plasma electron density.
摘要翻译：用于使用等离子体处理半导体衬底的等离子体处理装置及其方法可以同时保持稳定状态，同时使等离子体电子密度最大化。等离子体处理装置包括：产生等离子体以处理半导体衬底的室; 布置在腔室中的上下电极; DC电源单元，其向上下电极中的任一个施加DC电压; 以及控制器，其将从DC电源单元施加的DC电压的功率比调整到上电极和下电极中的任一个。结果，该装置肯定地限制电子，使得电极不会从等离子体发射，导致最大的等离子体电子密度。

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