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    • 5. 发明授权
    • Variable column redundancy region boundaries in SRAM
    • SRAM中的可变列冗余区域边界
    • US06944075B1
    • 2005-09-13
    • US10905451
    • 2005-01-05
    • Steven M. EustisMichael T. FraganoMichael R. Ouellette
    • Steven M. EustisMichael T. FraganoMichael R. Ouellette
    • G11C7/00
    • G11C29/808G11C11/41G11C29/816
    • A method of assigning bits to redundant regions for variable bit redundancy region boundaries in a compliable memory such as a 1-port SRAM is provided. Methods include allocating bits between the redundant regions in nearly equal proportions while minimizing the amount of chip real estate consumed by the memory. Methods also includes allocating bits in equal portions between redundant regions while occupying slightly more memory chip real estate. Methods also allocate bits into redundant regions with a simplified procedure which may or may not allocate bits into the redundant regions in equal proportions. All of the methods allow the total number of memory bits in the complied memory to be re-defined while maintaining the same allocation characteristics for each method. Accordingly, the methods allow efficient use of redundant memory bits while also conserving chip real estate or offering simplified allocation steps.
    • 提供了一种将比特分配给诸如1端口SRAM的可复制存储器中的可变位冗余区域边界的冗余区域的方法。 方法包括以几乎相等的比例在冗余区域之间分配比特,同时最小化存储器消耗的芯片空间的量。 方法还包括在冗余区域之间相等分配比特,同时占据稍微更多的存储器芯片空间。 方法还使用简化的过程将比特分配到冗余区域中,这可以或可以不以相等比例将比特分配到冗余区域中。 所有这些方法允许重新定义编译存储器中的存储器位的总数,同时为每种方法保持相同的分配特性。 因此,这些方法允许有效地使用冗余存储器位,同时还节省芯片空间或提供简化的分配步骤。
    • 9. 发明授权
    • Compilable memory structure and test methodology for both ASIC and foundry test environments
    • ASIC和代工测试环境的可编程内存结构和测试方法
    • US07404125B2
    • 2008-07-22
    • US10906147
    • 2005-02-04
    • Steven M. EustisJames A. MonzelSteven F. OaklandMichael R. Ouellette
    • Steven M. EustisJames A. MonzelSteven F. OaklandMichael R. Ouellette
    • G01R31/28
    • G11C29/48G11C29/1201G11C2029/3202
    • A memory structure configured for supporting multiple test methodologies includes a first plurality of multiplexers configured for selectively coupling at least one data input path and at least one address path between an external customer connection and a corresponding internal memory connection associated therewith. A second multiplexer is configured for selectively coupling an input of a test latch between a functional memory array connection and a memory logic connection coupled to the at least one data input path, with an output of the test latch defining a data out customer connection. Flush logic is further configured to direct data from the memory logic connection to the data out customer connection during a test of logic associated with a customer chip, thereby facilitating observation of the memory logic connection at the customer chip, wherein test elements of the memory structure comprise a scan architecture of a first type, and test elements of the customer chip comprise a scan architecture of a second type.
    • 配置用于支持多种测试方法的存储器结构包括:第一多个复用器,被配置为选择性地耦合至少一个数据输入路径和外部客户连接与与其相关联的对应的内部存储器连接之间的至少一个地址路径。 第二多路复用器被配置用于在功能存储器阵列连接和耦合到所述至少一个数据输入路径的存储器逻辑连接之间选择性地耦合测试锁存器的输入,测试锁存器的输出定义数据输出客户连接。 冲洗逻辑还被配置为在与客户芯片相关联的逻辑的测试期间将数据从存储器逻辑连接引导到数据输出客户连接,从而有助于观察客户芯片处的存储器逻辑连接,其中存储器结构的测试元件 包括第一类型的扫描架构,并且客户芯片的测试元件包括第二类型的扫描架构。