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1. 发明申请

US20070076179A1 IMMERSION OPTICAL LITHOGRAPHY SYSTEM HAVING PROTECTIVE OPTICAL COATING 失效
标题翻译：具有保护光学涂层的光学光刻系统
公开(公告)号：US20070076179A1
公开(公告)日：2007-04-05
申请号：US11163007
申请日：2005-09-30
申请人： Steven Holmes , Toshiharu Furukawa , Charles Koburger III , Naim Moumen
发明人： Steven Holmes , Toshiharu Furukawa , Charles Koburger III , Naim Moumen
IPC分类号： G03B27/42
CPC分类号： G03F7/2041 , G03F7/11 , G03F7/70341 , G03F7/70958
摘要： An immersion lithography system is provided which includes an optical source operable to produce light having a nominal wavelength and an optical imaging system. The optical imaging system has an optical element in an optical path from the optical source to an article to be patterned thereby. The optical element has a face which is adapted to contact a liquid occupying a space between the face and the article. The optical element includes a material which is degradable by the liquid and a protective coating which covers the degradable material at the face for protecting the face from the liquid, the protective coating being transparent to the light, stable when exposed to the light and stable when exposed to the liquid.
摘要翻译：提供了一种浸没光刻系统，其包括可操作以产生具有标称波长的光和光学成像系统的光源。光学成像系统具有从光源到待图案化的制品的光路中的光学元件。光学元件具有适于接触占据面部和制品之间的空间的液体的面。光学元件包括可被液体降解的材料和覆盖面上的可降解材料以保护面部免受液体的保护涂层，保护涂层对于光是透明的，当暴露于光时稳定，并且当稳定时暴露于液体。

2. 发明申请

US20070296947A1 Immersion optical lithography system having protective optical coating 失效
标题翻译：具有保护性光学涂层的浸没光学光刻系统
公开(公告)号：US20070296947A1
公开(公告)日：2007-12-27
申请号：US11899085
申请日：2007-09-04
申请人： Steven Holmes , Toshiharu Furukawa , Charles Koburger , Naim Moumen
发明人： Steven Holmes , Toshiharu Furukawa , Charles Koburger , Naim Moumen
IPC分类号： G03B27/42
CPC分类号： G03F7/2041 , G03F7/11 , G03F7/70341 , G03F7/70958
摘要： An immersion lithography system is provided which includes an optical source operable to produce light having a nominal wavelength and an optical imaging system. The optical imaging system has an optical element in an optical path from the optical source to an article to be patterned thereby. The optical element has a face which is adapted to contact a liquid occupying a space between the face and the article. The optical element includes a material which is degradable by the liquid and a protective coating which covers the degradable material at the face for protecting the face from the liquid, the protective coating being transparent to the light, stable when exposed to the light and stable when exposed to the liquid.
摘要翻译：提供了一种浸没光刻系统，其包括可操作以产生具有标称波长的光和光学成像系统的光源。光学成像系统具有从光源到待图案化的制品的光路中的光学元件。光学元件具有适于接触占据面部和制品之间的空间的液体的面。光学元件包括可被液体降解的材料和覆盖面上的可降解材料以保护面部免受液体的保护涂层，保护涂层对于光是透明的，当暴露于光时稳定，并且当稳定时暴露于液体。

3. 发明申请

US20080225251A1 Immersion optical lithography system having protective optical coating 有权
标题翻译：具有保护性光学涂层的浸没光学光刻系统
公开(公告)号：US20080225251A1
公开(公告)日：2008-09-18
申请号：US12154003
申请日：2008-05-19
申请人： Steven J. Holmes , Toshiharu Furukawa , Charles W. Koburger , Naim Moumen
发明人： Steven J. Holmes , Toshiharu Furukawa , Charles W. Koburger , Naim Moumen
IPC分类号： G03B27/52
CPC分类号： G03F7/2041 , G03F7/11 , G03F7/70341 , G03F7/70958
摘要： An immersion lithography system is provided which includes an optical source operable to produce light having a nominal wavelength and an optical imaging system. The optical imaging system has an optical element in an optical path from the optical source to an article to be patterned thereby. The optical element has a face which is adapted to contact a liquid occupying a space between the face and the article. The optical element includes a material which is degradable by the liquid and a protective coating which covers the degradable material at the face for protecting the face from the liquid, the protective coating being transparent to the light, stable when exposed to the light and stable when exposed to the liquid.
摘要翻译：提供了一种浸没光刻系统，其包括可操作以产生具有标称波长的光和光学成像系统的光源。光学成像系统具有从光源到待图案化的制品的光路中的光学元件。光学元件具有适于接触占据面部和制品之间的空间的液体的面。光学元件包括可被液体降解的材料和覆盖面上的可降解材料以保护面部免受液体的保护涂层，保护涂层对于光是透明的，当暴露于光时稳定，并且当稳定时暴露于液体。

4. 发明授权

US07646469B2 Immersion optical lithography system having protective optical coating 失效
标题翻译：具有保护性光学涂层的浸没光学光刻系统
公开(公告)号：US07646469B2
公开(公告)日：2010-01-12
申请号：US11899085
申请日：2007-09-04
申请人： Steven J. Holmes , Toshiharu Furukawa , Charles W. Koburger, III , Naim Moumen
发明人： Steven J. Holmes , Toshiharu Furukawa , Charles W. Koburger, III , Naim Moumen
IPC分类号： G03B27/42 , G03B27/52
CPC分类号： G03F7/2041 , G03F7/11 , G03F7/70341 , G03F7/70958
摘要： An immersion lithography system is provided which includes an optical source operable to produce light having a nominal wavelength and an optical imaging system. The optical imaging system has an optical element in an optical path from the optical source to an article to be patterned thereby. The optical element has a face which is adapted to contact a liquid occupying a space between the face and the article. The optical element includes a material which is degradable by the liquid and a protective coating which covers the degradable material at the face for protecting the face from the liquid, the protective coating being transparent to the light, stable when exposed to the light and stable when exposed to the liquid.
摘要翻译：提供了一种浸没光刻系统，其包括可操作以产生具有标称波长的光和光学成像系统的光源。光学成像系统具有从光源到待图案化的制品的光路中的光学元件。光学元件具有适于接触占据面部和制品之间的空间的液体的面。光学元件包括可被液体降解的材料和覆盖面上的可降解材料以保护面部免受液体的保护涂层，保护涂层对于光是透明的，当暴露于光时稳定，并且当稳定时暴露于液体。

5. 发明授权

US07495743B2 Immersion optical lithography system having protective optical coating 失效
标题翻译：具有保护性光学涂层的浸没光学光刻系统
公开(公告)号：US07495743B2
公开(公告)日：2009-02-24
申请号：US11163007
申请日：2005-09-30
申请人： Steven J. Holmes , Toshiharu Furukawa , Charles W. Koburger, III , Naim Moumen
发明人： Steven J. Holmes , Toshiharu Furukawa , Charles W. Koburger, III , Naim Moumen
IPC分类号： G03B27/42 , G03B27/52
CPC分类号： G03F7/2041 , G03F7/11 , G03F7/70341 , G03F7/70958
摘要： An immersion lithography system is provided which includes an optical source operable to produce light having a nominal wavelength and an optical imaging system. The optical imaging system has an optical element in an optical path from the optical source to an article to be patterned thereby. The optical element has a face which is adapted to contact a liquid occupying a space between the face and the article. The optical element includes a material which is degradable by the liquid and a protective coating which covers the degradable material at the face for protecting the face from the liquid, the protective coating being transparent to the light, stable when exposed to the light and stable when exposed to the liquid.
摘要翻译：提供了一种浸没光刻系统，其包括可操作以产生具有标称波长的光和光学成像系统的光源。光学成像系统具有从光源到待图案化的制品的光路中的光学元件。光学元件具有适于接触占据面部和制品之间的空间的液体的面。光学元件包括可被液体降解的材料和覆盖面上的可降解材料以保护面部免受液体的保护涂层，保护涂层对于光是透明的，当暴露于光时稳定，并且当稳定时暴露于液体。

6. 发明授权

US08009268B2 Immersion optical lithography system having protective optical coating 有权
标题翻译：具有保护性光学涂层的浸没光学光刻系统
公开(公告)号：US08009268B2
公开(公告)日：2011-08-30
申请号：US12154003
申请日：2008-05-19
申请人： Steven J. Holmes , Toshiharu Furukawa , Charles W. Koburger, III , Naim Moumen
发明人： Steven J. Holmes , Toshiharu Furukawa , Charles W. Koburger, III , Naim Moumen
IPC分类号： G03B27/52 , G03B27/42
CPC分类号： G03F7/2041 , G03F7/11 , G03F7/70341 , G03F7/70958
摘要： An immersion lithography system is provided which includes an optical source operable to produce light having a nominal wavelength and an optical imaging system. The optical imaging system has an optical element in an optical path from the optical source to an article to be patterned thereby. The optical element has a face which is adapted to contact a liquid occupying a space between the face and the article. The optical element includes a material which is degradable by the liquid and a protective coating which covers the degradable material at the face for protecting the face from the liquid, the protective coating being transparent to the light, stable when exposed to the light and stable when exposed to the liquid.
摘要翻译：提供了一种浸没光刻系统，其包括可操作以产生具有标称波长的光和光学成像系统的光源。光学成像系统具有从光源到待图案化的制品的光路中的光学元件。光学元件具有适于接触占据面部和制品之间的空间的液体的面。光学元件包括可被液体降解的材料和覆盖面上的可降解材料以保护面部免受液体的保护涂层，保护涂层对于光是透明的，当暴露于光时稳定，并且当稳定时暴露于液体。

7. 发明授权

US08753936B2 Changing effective work function using ion implantation during dual work function metal gate integration 有权
标题翻译：在双功能金属门集成中，使用离子注入来改变有效的功函数
公开(公告)号：US08753936B2
公开(公告)日：2014-06-17
申请号：US12190220
申请日：2008-08-12
申请人： Michael P. Chudzik , Martin M. Frank , Herbert L. Ho , Mark J. Hurley , Rashmi Jha , Naim Moumen , Vijay Narayanan , Dae-Gyu Park , Vamsi K. Paruchuri
发明人： Michael P. Chudzik , Martin M. Frank , Herbert L. Ho , Mark J. Hurley , Rashmi Jha , Naim Moumen , Vijay Narayanan , Dae-Gyu Park , Vamsi K. Paruchuri
IPC分类号： H01L21/8234
CPC分类号： H01L29/49 , H01L21/28079 , H01L21/28088 , H01L21/823842 , H01L27/092 , H01L29/4958 , H01L29/517
摘要： Ion implantation to change an effective work function for dual work function metal gate integration is presented. One method may include forming a high dielectric constant (high-k) layer over a first-type field effect transistor (FET) region and a second-type FET region; forming a metal layer having a first effective work function compatible for a first-type FET over the first-type FET region and the second-type FET region; and changing the first effective work function to a second, different effective work function over the second-type FET region by implanting a species into the metal layer over the second-type FET region.
摘要翻译：提出了离子注入来改变双功能金属栅极整合的有效功函数。一种方法可以包括在第一类型场效应晶体管（FET）区域和第二类型FET区域上形成高介电常数（高k）层; 在第一型FET区域和第二类型FET区域上形成具有与第一型FET兼容的第一有效功函数的金属层; 以及通过在第二类型FET区域上将金属注入到金属层中，将第一有效功函数改变为第二类不同的有效功函数。

8. 发明授权

US08232612B2 Semiconductor transistors having high-K gate dielectric layers, metal gate electrode regions, and low fringing capacitances 有权
标题翻译：具有高K栅极电介质层，金属栅电极区域和低边缘电容的半导体晶体管
公开(公告)号：US08232612B2
公开(公告)日：2012-07-31
申请号：US12645981
申请日：2009-12-23
申请人： James William Adkisson , Michael P. Chudzik , Jeffrey Peter Gambino , Renee T. Mo , Naim Moumen
发明人： James William Adkisson , Michael P. Chudzik , Jeffrey Peter Gambino , Renee T. Mo , Naim Moumen
IPC分类号： H01L21/00
CPC分类号： H01L29/4983 , H01L29/4966 , H01L29/518 , H01L29/6653 , H01L29/66545 , H01L29/6659 , H01L29/7833 , Y10S257/90
摘要： A semiconductor structure. The structure includes (i) a semiconductor substrate which includes a channel region, (ii) first and second source/drain regions on the semiconductor substrate, (iii) a gate dielectric region, and (iv) a gate electrode region, (v) a plurality of interconnect layers on the gate electrode region, and (vi) first and second spaces. The gate dielectric region is disposed between and in direct physical contact with the channel region and the gate electrode region. The gate electrode region is disposed between and in direct physical contact with the gate dielectric region and the interconnect layers. The first and second spaces are in direct physical contact with the gate electrode region. The first space is disposed between the first source/drain region and the gate electrode region. The second space is disposed between the second source/drain region and the gate electrode region.
摘要翻译：半导体结构。该结构包括（i）半导体衬底，其包括沟道区，（ii）半导体衬底上的第一和第二源极/漏极区，（iii）栅极电介质区，和（iv）栅电极区，（v）栅电极区上的多个互连层，以及（vi）第一和第二空间。栅极电介质区域设置在沟道区域和栅电极区域之间并与其直接物理接触。栅电极区域设置在栅极电介质区域和互连层之间并与其直接物理接触。第一和第二空间与栅电极区域直接物理接触。第一空间设置在第一源极/漏极区域和栅极电极区域之间。第二空间设置在第二源极/漏极区域和栅极电极区域之间。

9. 发明申请

US20110121401A1 Gate Effective-Workfunction Modification for CMOS 有权
标题翻译：门有效功能修改CMOS
公开(公告)号：US20110121401A1
公开(公告)日：2011-05-26
申请号：US13019949
申请日：2011-02-02
申请人： Dae-Gyu Park , Michael P. Chudzik , Rashmi Jha , Siddarth A. Krishnan , Naim Moumen , Vijay Narayanan , Vamsi Paruchuri
发明人： Dae-Gyu Park , Michael P. Chudzik , Rashmi Jha , Siddarth A. Krishnan , Naim Moumen , Vijay Narayanan , Vamsi Paruchuri
IPC分类号： H01L27/092
CPC分类号： H01L21/823857 , H01L21/823842 , H01L29/785
摘要： CMOS circuit structures are disclosed with the PFET and NFET devices having high-k dielectric layers consisting of the same gate insulator material, and metal gate layers consisting of the same gate metal material. The PFET device has a “p” interface control layer which is capable of shifting the effective-workfunction of the gate in the p-direction. In a representative embodiment of the invention the “p” interface control layer is aluminum oxide. The NFET device may have an “n” interface control layer. The materials of the “p” and “n” interface control layers are differing materials. The “p” and “n” interface control layers are positioned to the opposite sides of their corresponding high-k dielectric layers. Methods for fabricating the CMOS circuit structures with the oppositely positioned “p” and “n” interface control layers are also disclosed.
摘要翻译：公开了CMOS电路结构，其中PFET和NFET器件具有由相同的栅极绝缘体材料构成的高k电介质层以及由相同栅极金属材料组成的金属栅极层。 PFET器件具有能够沿p方向移动栅极的有效功能的“p”接口控制层。在本发明的代表性实施例中，“p”界面控制层是氧化铝。 NFET器件可以具有“n”个界面控制层。 “p”和“n”界面控制层的材料是不同的材料。 “p”和“n”界面控制层位于其相应的高k电介质层的相对侧。还公开了制造具有相对定位的“p”和“n”界面控制层的CMOS电路结构的方法。

10. 发明授权

US07741181B2 Methods of forming mixed gate CMOS with single poly deposition 有权
标题翻译：使用单个聚合物沉积形成混合栅极CMOS的方法
公开(公告)号：US07741181B2
公开(公告)日：2010-06-22
申请号：US11936061
申请日：2007-11-06
申请人： Bruce B. Doris , Charlotte DeWan Adams , Naim Moumen , Ying Zhang
发明人： Bruce B. Doris , Charlotte DeWan Adams , Naim Moumen , Ying Zhang
IPC分类号： H01L21/8234
CPC分类号： H01L21/823842 , H01L21/28079 , H01L21/28088 , H01L21/823857 , H01L29/785
摘要： A method for fabricating metal gate and polysilicon gate FET devices on the same chip is disclosed. The method avoids the use of two separate masks during gate stack fabrication of the differing gates. By using a single mask, tighter NFET to PFET distances can be achieved, and the fabrication process is simplified. After blanket disposing layers for the fabrication of the metal gate stack, a covering protective material layer is formed, again in blanket fashion. A block level mask is used to clear the surface for the gate insulator formation in the poly gate device regions. During oxidation, which forms the gate dielectric for the poly gate devices, the protective material prevents damage of the metal gate device regions. Following oxidation, a single common polysilicon cover is disposed in blanket manner for continuing the fabrication of the gate stacks. The protective material is selected in such a way to be either easily removable upon oxidation, or to be conductive upon oxidation. In this latter case the oxidized protective material is incorporated into the metal gate stack, which incorporation results in a novel CMOS structure.
摘要翻译：公开了一种在同一芯片上制造金属栅极和多晶硅栅极FET器件的方法。该方法避免了在不同栅极的栅堆叠制造期间使用两个分离的掩模。通过使用单个掩模，可以实现更紧密的NFET至PFET距离，并简化制造工艺。在用于制造金属栅极堆叠的毯布设置层之后，再次以毯子形式形成覆盖保护材料层。块级别掩模用于清除多晶硅栅极器件区域中的栅极绝缘体形成的表面。在形成用于多晶硅栅极器件的栅极电介质的氧化期间，保护材料防止金属栅极器件区域的损坏。在氧化之后，以橡皮布方式设置单个公共多晶硅盖，以继续制造栅极堆叠。保护材料选择为在氧化时易于除去或在氧化时导电。在后一种情况下，氧化的保护材料被并入到金属栅极堆叠中，其结合形成了新的CMOS结构。

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