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    • 1. 发明授权
    • Method and apparatus for real-time, in-situ endpoint detection and
closed loop etch process control
    • 用于实时,原位端点检测和闭环蚀刻过程控制的方法和装置
    • US5392124A
    • 1995-02-21
    • US169876
    • 1993-12-17
    • Steven G. BarbeeTony F. HeinzUlrich HoferLeping LiVictor J. Silvestri
    • Steven G. BarbeeTony F. HeinzUlrich HoferLeping LiVictor J. Silvestri
    • G01B11/06G01N21/00G01N21/45H01L21/302H01L21/306H01L21/3065
    • G01B11/0683
    • A method and apparatus for detecting an etching endpoint of a film on a substrate whereby a first excitation beam of light having a prescribed wavelength is provided, the first light beam substantially containing only a first harmonic component of light at that wavelength. The first light beam is directed at a prescribed incident angle to an interface between the film and the substrate, the first light beam being reflected off the interface to thereby provide a second light beam, the second light beam containing the first harmonic component of the first light beam and a generated second harmonic component. The generated second harmonic component is detected and a first output signal representative thereof is provided. A generated second harmonic component reference of the first light beam is produced and a second output signal representative of a generated second harmonic component reference is provided. The detected second harmonic component of the first light beam is normalized, as a function of the first and second output signals, in real-time, and a third output signal representative of an occurrence of a prescribed change in the normalized detected second harmonic component is provided. The prescribed change corresponds to the etching endpoint of the film on the substrate.
    • 一种用于检测基板上的膜的蚀刻端点的方法和装置,由此提供具有规定波长的第一激发光束,所述第一光束基本上仅包含该波长的光的一次谐波分量。 第一光束以规定的入射角度指向膜和衬底之间的界面,第一光束从界面反射,从而提供第二光束,第二光束包含第一光束的第一谐波分量 光束和产生的二次谐波分量。 检测所产生的二次谐波分量,并提供代表其的第一输出信号。 产生第一光束的产生的二次谐波分量基准,并且提供表示产生的二次谐波分量基准的第二输出信号。 第一光束的检测到的二次谐波分量被实时地归一化为第一和第二输出信号的函数,并且表示归一化检测的二次谐波分量中的规定变化的发生的第三输出信号是 提供。 规定的变化对应于衬底上的膜的蚀刻终点。