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1. 发明授权

US08679876B2 Laser diode and method for fabricating same 有权
标题翻译：激光二极管及其制造方法
公开(公告)号：US08679876B2
公开(公告)日：2014-03-25
申请号：US12826305
申请日：2010-06-29
申请人： Arpan Chakraborty , Monica Hansen , Steven Denbaars , Shuji Nakamura , George Brandes
发明人： Arpan Chakraborty , Monica Hansen , Steven Denbaars , Shuji Nakamura , George Brandes
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/2004 , H01S5/3406
摘要： A laser diode and method for fabricating same, wherein the laser diode generally comprises an InGaN compliance layer on a GaN n-type contact layer and an AlGaN/GaN n-type strained super lattice (SLS) on the compliance layer. An n-type GaN separate confinement heterostructure (SCH) is on said n-type SLS and an InGaN multiple quantum well (MQW) active region is on the n-type SCH. A GaN p-type SCH on the MQW active region, an AlGaN/GaN p-type SLS is on the p-type SCH, and a p-type GaN contact layer is on the p-type SLS. The compliance layer has an In percentage that reduces strain between the n-type contact layer and the n-type SLS compared to a laser diode without the compliance layer. Accordingly, the n-type SLS can be grown with an increased Al percentage to increase the index of refraction. This along with other features allows for reduced threshold current and voltage operation.
摘要翻译：一种激光二极管及其制造方法，其中激光二极管通常包括在GaN n型接触层上的InGaN柔性层和在柔性层上的AlGaN / GaN n型应变超晶格（SLS）。 n型GaN分离限制异质结构（SCH）在所述n型SLS上，并且InGaN多量子阱（MQW）有源区在n型SCH上。在MQW有源区上的GaN p型SCH，AlGaN / GaN p型SLS在p型SCH上，p型GaN接触层在p型SLS上。顺应层具有与不具有柔顺层的激光二极管相比，n型接触层和n型SLS之间的应变的In百分比。因此，n型SLS可以以增加的Al百分数生长以增加折射率。这与其他功能一起允许降低阈值电流和电压操作。

2. 发明授权

US07769066B2 Laser diode and method for fabricating same 有权
标题翻译：激光二极管及其制造方法
公开(公告)号：US07769066B2
公开(公告)日：2010-08-03
申请号：US11600604
申请日：2006-11-15
申请人： Arpan Chakraborty , Monica Hansen , Steven Denbaars , Shuji Nakamura , George Brandes
发明人： Arpan Chakraborty , Monica Hansen , Steven Denbaars , Shuji Nakamura , George Brandes
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/2004 , H01S5/3406
摘要： A laser diode and method for fabricating same, wherein the laser diode generally comprises an InGaN compliance layer on a GaN n-type contact layer and an AlGaN/GaN n-type strained super lattice (SLS) on the compliance layer. An n-type GaN separate confinement heterostructure (SCH) is on said n-type SLS and an InGaN multiple quantum well (MQW) active region is on the n-type SCH. A GaN p-type SCH on the MQW active region, an AlGaN/GaN p-type SLS is on the p-type SCH, and a p-type GaN contact layer is on the p-type SLS. The compliance layer has an In percentage that reduces strain between the n-type contact layer and the n-type SLS compared to a laser diode without the compliance layer. Accordingly, the n-type SLS can be grown with an increased Al percentage to increase the index of refraction. This along with other features allows for reduced threshold current and voltage operation.
摘要翻译：一种激光二极管及其制造方法，其中激光二极管通常包括在GaN n型接触层上的InGaN柔性层和在柔性层上的AlGaN / GaN n型应变超晶格（SLS）。 n型GaN分离限制异质结构（SCH）在所述n型SLS上，并且InGaN多量子阱（MQW）有源区在n型SCH上。在MQW有源区上的GaN p型SCH，AlGaN / GaN p型SLS在p型SCH上，p型GaN接触层在p型SLS上。顺应层具有与不具有柔顺层的激光二极管相比，n型接触层和n型SLS之间的应变的In百分比。因此，n型SLS可以以增加的Al百分数生长以增加折射率。这与其他功能一起允许降低阈值电流和电压操作。

3. 发明授权

US08050304B2 Group-III nitride based laser diode and method for fabricating same 有权
标题翻译： III族氮化物基激光二极管及其制造方法
公开(公告)号：US08050304B2
公开(公告)日：2011-11-01
申请号：US12880392
申请日：2010-09-13
申请人： Steven Denbaars , Shuji Nakamura , Monica Hansen
发明人： Steven Denbaars , Shuji Nakamura , Monica Hansen
IPC分类号： H01S5/00 , H04B10/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0021 , H01S5/0202 , H01S5/2009 , H01S5/2081 , H01S5/22 , H01S5/3063 , H01S5/3216 , H01S2304/00 , Y10T428/12875
摘要： A laser diode comprising a first separate confinement heterostructure and an active region on the first separate confinement heterostructure. A second separate confinement heterostructure is on the active region and one or more epitaxial layers is on the second separate confinement heterostructure. A ridge is formed in the epitaxial layers with a first mesa around the ridge. The first mesa is 0.1 to 0.2 microns above the second confinement heterostructure.
摘要翻译：一种激光二极管，包括第一分离限制异质结构和第一分离限制性异质结构上的有源区。第二分离的限制异质结构在有源区上，一个或多个外延层位于第二分离限制异质结构上。在外延层中形成具有围绕脊的第一台面的脊。第一台面比第二限制异质结构高0.1至0.2微米。

4. 发明授权

US07682944B2 Pendeo epitaxial structures and devices 有权
标题翻译： Pendeo外延结构和器件
公开(公告)号：US07682944B2
公开(公告)日：2010-03-23
申请号：US11957154
申请日：2007-12-14
申请人： George R. Brandes , Arpan Chakraborty , Shuji Nakamura , Monica Hansen , Steven Denbaars
发明人： George R. Brandes , Arpan Chakraborty , Shuji Nakamura , Monica Hansen , Steven Denbaars
IPC分类号： H01L21/20
CPC分类号： H01L21/02639 , H01L21/0237 , H01L21/0254 , H01L21/0265 , H01L29/2003 , H01L29/66462
摘要： A substrate comprising a trench lateral epitaxial overgrowth structure including a trench cavity, wherein the trench cavity includes a growth-blocking layer or patterned material supportive of a coalescent Pendeo layer thereon, on at least a portion of an inside surface of the trench. Such substrate is suitable for carrying out lateral epitaxial overgrowth to form a bridged lateral overgrowth formation overlying the trench cavity. The bridged lateral overgrowth formation provides a substrate surface on which epitaxial layers can be grown in the fabrication of microelectronic devices such as laser diodes, high electron mobility transistors, ultraviolet light emitting diodes, and other devices in which low dislocation density is critical. The epitaxial substrate structures of the invention can be formed without the necessity for deep trenches, such as are required in conventional Pendeo epitaxial overgrowth structures.
摘要翻译：一种衬底，包括包括沟槽腔的沟槽横向外延生长结构，其中所述沟槽腔在所述沟槽的内表面的至少一部分上包括支撑其上的聚结Pendeo层的生长阻挡层或图案化材料。这种衬底适用于进行横向外延过度生长以形成覆盖在沟槽腔上的桥接横向过度生长层。桥接的横向过生长形成提供衬底表面，在衬底表面上，可以在其中制造微电子器件（例如激光二极管，高电子迁移率晶体管，紫外发光二极管以及低位错密度至关重要的其它器件）中生长外延层。可以形成本发明的外延衬底结构，而不需要诸如常规Pendeo外延过度生长结构中所需的深沟槽。

5. 发明申请

US20100330720A1 GROUP-III NITRIDE BASED LASER DIODE AND METHOD FOR FABRICATING SAME 有权
标题翻译：基于III族氮化物的激光二极管及其制造方法
公开(公告)号：US20100330720A1
公开(公告)日：2010-12-30
申请号：US12880392
申请日：2010-09-13
申请人： STEVEN DENBAARS , Shuji Nakamura , Monica Hansen
发明人： STEVEN DENBAARS , Shuji Nakamura , Monica Hansen
IPC分类号： H01L21/30
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0021 , H01S5/0202 , H01S5/2009 , H01S5/2081 , H01S5/22 , H01S5/3063 , H01S5/3216 , H01S2304/00 , Y10T428/12875
摘要： A laser diode comprising a first separate confinement heterostructure and an active region on the first separate confinement heterostructure. A second separate confinement heterostructure is on the active region and one or more epitaxial layers is on the second separate confinement heterostructure. A ridge is formed in the epitaxial layers with a first mesa around the ridge. The first mesa is 0.1 to 0.2 microns above the second confinement heterostructure.
摘要翻译：一种激光二极管，包括第一分离限制异质结构和第一分离限制性异质结构上的有源区。第二分离的限制异质结构在有源区上，一个或多个外延层位于第二分离限制异质结构上。在外延层中形成具有围绕脊的第一台面的脊。第一台面比第二限制异质结构高0.1至0.2微米。

6. 发明申请

US20100273281A1 LASER DIODE AND METHOD FOR FABRICATING SAME 有权
标题翻译：激光二极管及其制造方法
公开(公告)号：US20100273281A1
公开(公告)日：2010-10-28
申请号：US12826305
申请日：2010-06-29
申请人： ARPAN CHAKRABORTY , Monica Hansen , Steven Denbaars , Shuji Nakamura , George Brandes
发明人： ARPAN CHAKRABORTY , Monica Hansen , Steven Denbaars , Shuji Nakamura , George Brandes
IPC分类号： H01L21/20
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/2004 , H01S5/3406
摘要： A laser diode and method for fabricating same, wherein the laser diode generally comprises an InGaN compliance layer on a GaN n-type contact layer and an AlGaN/GaN n-type strained super lattice (SLS) on the compliance layer. An n-type GaN separate confinement heterostructure (SCH) is on said n-type SLS and an InGaN multiple quantum well (MQW) active region is on the n-type SCH. A GaN p-type SCH on the MQW active region, an AlGaN/GaN p-type SLS is on the p-type SCH, and a p-type GaN contact layer is on the p-type SLS. The compliance layer has an In percentage that reduces strain between the n-type contact layer and the n-type SLS compared to a laser diode without the compliance layer. Accordingly, the n-type SLS can be grown with an increased Al percentage to increase the index of refraction. This along with other features allows for reduced threshold current and voltage operation.
摘要翻译：一种激光二极管及其制造方法，其中激光二极管通常包括在GaN n型接触层上的InGaN柔性层和在柔性层上的AlGaN / GaN n型应变超晶格（SLS）。 n型GaN分离限制异质结构（SCH）在所述n型SLS上，并且InGaN多量子阱（MQW）有源区在n型SCH上。在MQW有源区上的GaN p型SCH，AlGaN / GaN p型SLS在p型SCH上，p型GaN接触层在p型SLS上。顺应层具有与不具有柔顺层的激光二极管相比，n型接触层和n型SLS之间的应变的In百分比。因此，n型SLS可以以增加的Al百分数生长以增加折射率。这与其他功能一起允许降低阈值电流和电压操作。

7. 发明授权

US07813400B2 Group-III nitride based laser diode and method for fabricating same 有权
标题翻译： III族氮化物基激光二极管及其制造方法
公开(公告)号：US07813400B2
公开(公告)日：2010-10-12
申请号：US11600617
申请日：2006-11-15
申请人： Steven Denbaars , Shuji Nakamura , Monica Hansen
发明人： Steven Denbaars , Shuji Nakamura , Monica Hansen
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0021 , H01S5/0202 , H01S5/2009 , H01S5/2081 , H01S5/22 , H01S5/3063 , H01S5/3216 , H01S2304/00 , Y10T428/12875
摘要： A laser diode comprising a first separate confinement heterostructure and an active region on the first separate confinement heterostructure. A second separate confinement heterostructure is on the active region and one or more epitaxial layers is on the second separate confinement heterostructure. A ridge is formed in the epitaxial layers with a first mesa around the ridge. The first mesa is 0.1 to 0.2 microns above the second confinement heterostructure.
摘要翻译：一种激光二极管，包括第一分离限制异质结构和第一分离限制性异质结构上的有源区。第二分离的限制异质结构在有源区上，一个或多个外延层位于第二分离限制异质结构上。在外延层中形成具有围绕脊的第一台面的脊。第一台面比第二限制异质结构高0.1至0.2微米。

8. 发明申请

US20090152565A1 PENDEO EPITAXIAL STRUCTURES AND DEVICES 有权
标题翻译： PENDEO外形结构和设备
公开(公告)号：US20090152565A1
公开(公告)日：2009-06-18
申请号：US11957154
申请日：2007-12-14
申请人： George R. Brandes , Arpan Chakraborty , Shuji Nakamura , Monica Hansen , Steven Denbaars
发明人： George R. Brandes , Arpan Chakraborty , Shuji Nakamura , Monica Hansen , Steven Denbaars
IPC分类号： H01L29/20 , H01L21/76
CPC分类号： H01L21/02639 , H01L21/0237 , H01L21/0254 , H01L21/0265 , H01L29/2003 , H01L29/66462
摘要： A substrate comprising a trench lateral epitaxial overgrowth structure including a trench cavity, wherein the trench cavity includes a growth-blocking layer or patterned material supportive of a coalescent Pendeo layer thereon, on at least a portion of an inside surface of the trench. Such substrate is suitable for carrying out lateral epitaxial overgrowth to form a bridged lateral overgrowth formation overlying the trench cavity. The bridged lateral overgrowth formation provides a substrate surface on which epitaxial layers can be grown in the fabrication of microelectronic devices such as laser diodes, high electron mobility transistors, ultraviolet light emitting diodes, and other devices in which low dislocation density is critical. The epitaxial substrate structures of the invention can be formed without the necessity for deep trenches, such as are required in conventional Pendeo epitaxial overgrowth structures.
摘要翻译：一种衬底，包括包括沟槽腔的沟槽横向外延生长结构，其中所述沟槽腔在所述沟槽的内表面的至少一部分上包括支撑其上的聚结Pendeo层的生长阻挡层或图案化材料。这种衬底适用于进行横向外延过度生长以形成覆盖在沟槽腔上的桥接横向过度生长层。桥接的横向过生长形成提供衬底表面，在衬底表面上，可以在其中制造微电子器件（例如激光二极管，高电子迁移率晶体管，紫外发光二极管以及低位错密度至关重要的其它器件）中生长外延层。可以形成本发明的外延衬底结构，而不需要诸如常规Pendeo外延过度生长结构中所需的深沟槽。

9. 发明申请

US20080112453A1 Group-III nitride based laser diode and method for fabricating same 有权
标题翻译： III族氮化物基激光二极管及其制造方法
公开(公告)号：US20080112453A1
公开(公告)日：2008-05-15
申请号：US11600617
申请日：2006-11-15
申请人： Steven Denbaars , Shuji Nakamura , Monica Hansen
发明人： Steven Denbaars , Shuji Nakamura , Monica Hansen
IPC分类号： H01S5/20 , H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0021 , H01S5/0202 , H01S5/2009 , H01S5/2081 , H01S5/22 , H01S5/3063 , H01S5/3216 , H01S2304/00 , Y10T428/12875
摘要： A laser diode comprising a first separate confinement heterostructure and an active region on the first separate confinement heterostructure. A second separate confinement heterostructure is on the active region and one or more epitaxial layers is on the second separate confinement heterostructure. A ridge is formed in the epitaxial layers with a first mesa around the ridge. The first mesa is 0.1 to 0.2 microns above the second confinement heterostructure.
摘要翻译：一种激光二极管，包括第一分离限制异质结构和第一分离限制性异质结构上的有源区。第二分离的限制异质结构在有源区上，一个或多个外延层位于第二分离限制异质结构上。在外延层中形成具有围绕脊的第一台面的脊。第一台面比第二限制异质结构高0.1至0.2微米。

10. 发明申请

US20080112452A1 Laser diode and method for fabricating same 有权
标题翻译：激光二极管及其制造方法
公开(公告)号：US20080112452A1
公开(公告)日：2008-05-15
申请号：US11600604
申请日：2006-11-15
申请人： Arpan Chakraborty , Monica Hansen , Steven Denbaars , Shuji Nakamura , George Brandes
发明人： Arpan Chakraborty , Monica Hansen , Steven Denbaars , Shuji Nakamura , George Brandes
IPC分类号： H01S5/00 , H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/2004 , H01S5/3406
摘要： A laser diode and method for fabricating same, wherein the laser diode generally comprises an InGaN compliance layer on a GaN n-type contact layer and an AlGaN/GaN n-type strained super lattice (SLS) on the compliance layer. An n-type GaN separate confinement heterostructure (SCH) is on said n-type SLS and an InGaN multiple quantum well (MQW) active region is on the n-type SCH. A GaN p-type SCH on the MQW active region, an AlGaN/GaN p-type SLS is on the p-type SCH, and a p-type GaN contact layer is on the p-type SLS. The compliance layer has an In percentage that reduces strain between the n-type contact layer and the n-type SLS compared to a laser diode without the compliance layer. Accordingly, the n-type SLS can be grown with an increased Al percentage to increase the index of refraction. This along with other features allows for reduced threshold current and voltage operation.
摘要翻译：一种激光二极管及其制造方法，其中激光二极管通常包括在GaN n型接触层上的InGaN柔性层和在柔性层上的AlGaN / GaN n型应变超晶格（SLS）。 n型GaN分离限制异质结构（SCH）在所述n型SLS上，并且InGaN多量子阱（MQW）有源区在n型SCH上。在MQW有源区上的GaN p型SCH，AlGaN / GaN p型SLS在p型SCH上，p型GaN接触层在p型SLS上。顺应层具有与不具有柔顺层的激光二极管相比，n型接触层和n型SLS之间的应变的In百分比。因此，n型SLS可以以增加的Al百分数生长以增加折射率。这与其他功能一起允许降低阈值电流和电压操作。

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