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1. 发明授权

US07245151B2 Logic circuitry powered by partially rectified AC waveform 有权
标题翻译：由部分整流交流波形供电的逻辑电路
公开(公告)号：US07245151B2
公开(公告)日：2007-07-17
申请号：US11424450
申请日：2006-06-15
申请人： Paul F. Baude , Michael A. Haase , Steven D. Theiss
发明人： Paul F. Baude , Michael A. Haase , Steven D. Theiss
IPC分类号： G06K19/07 , G06K7/10 , H02M7/217
CPC分类号： G06K19/0713 , G06K19/0723 , H02M7/06 , H02M7/217
摘要： Logic circuitry is powered by a partially rectified alternating current (ac) waveform. The waveform is partially rectified in the sense that it does not provide a clean, primarily dc power signal. Instead, it is possible to power logic circuitry with a waveform that includes a substantial ac component. The partially rectified ac waveform may be applied to logic circuitry incorporating thin film transistors based on amorphous or polycrystalline organic semiconductors, inorganic semiconductors or combinations of both.
摘要翻译：逻辑电路由部分整流的交流（ac）波形供电。在不提供干净的主要直流电源信号的意义上，波形是部分整流的。相反，可以用包含大量交流分量的波形为逻辑电路供电。部分整流的交流波形可以应用于结合基于无定形或多晶有机半导体，无机半导体或两者的组合的薄膜晶体管的逻辑电路。

2. 发明授权

US06667215B2 Method of making transistors 失效
标题翻译：制造晶体管的方法
公开(公告)号：US06667215B2
公开(公告)日：2003-12-23
申请号：US10137562
申请日：2002-05-02
申请人： Steven D. Theiss , Paul F. Baude , Michael A. Haase , Silva K. Theiss
发明人： Steven D. Theiss , Paul F. Baude , Michael A. Haase , Silva K. Theiss
IPC分类号： H01L21336
CPC分类号： H01L51/0021 , B82Y10/00 , C23C14/042 , H01L21/31691 , H01L29/66742 , H01L51/001 , H01L51/0013 , H01L51/0016 , H01L51/0036 , H01L51/0037 , H01L51/0046 , H01L51/0052 , H01L51/0078 , H01L51/0545 , Y10S438/943 , Y10S438/944
摘要： A method for making transistors comprises depositing source electrode and drain electrode features onto a substrate through a single aperture in a stationary shadow mask, said aperture having at least two opposing edges; wherein the shapes of the features are defined by the aperture and location of source materials in relation to the substrate.
摘要翻译：一种用于制造晶体管的方法包括通过固定荫罩中的单个孔将源电极和漏极特征沉积到衬底上，所述孔具有至少两个相对的边缘; 其中特征的形状由源材料相对于基底的孔径和位置限定。

3. 发明授权

US07078937B2 Logic circuitry powered by partially rectified ac waveform 失效
标题翻译：由部分整流的交流波形供电的逻辑电路
公开(公告)号：US07078937B2
公开(公告)日：2006-07-18
申请号：US10738082
申请日：2003-12-17
申请人： Paul F. Baude , Michael A. Haase , Steven D. Theiss
发明人： Paul F. Baude , Michael A. Haase , Steven D. Theiss
IPC分类号： H03K19/20 , H02M7/00
CPC分类号： G06K19/0713 , G06K19/0723 , H02M7/06 , H02M7/217
摘要： Logic circuitry is powered by a partially rectified alternating current (ac) waveform. The waveform is partially rectified in the sense that it does not provide a clean, primarily dc power signal. Instead, it is possible to power logic circuitry with a waveform that includes a substantial ac component. The partially rectified ac waveform may be applied to logic circuitry incorporating thin film transistors based on amorphous or polycrystalline organic semiconductors, inorganic semiconductors or combinations of both.
摘要翻译：逻辑电路由部分整流的交流（ac）波形供电。在不提供干净的主要直流电源信号的意义上，波形是部分整流的。相反，可以用包含大量交流分量的波形为逻辑电路供电。部分整流的交流波形可以应用于结合基于无定形或多晶有机半导体，无机半导体或两者的组合的薄膜晶体管的逻辑电路。

4. 发明授权

US06806520B2 Method of making transistors 有权
标题翻译：制造晶体管的方法
公开(公告)号：US06806520B2
公开(公告)日：2004-10-19
申请号：US10719209
申请日：2003-11-21
申请人： Steven D. Theiss , Michael A. Haase , Silva K. Theiss
发明人： Steven D. Theiss , Michael A. Haase , Silva K. Theiss
IPC分类号： H01L2976
CPC分类号： H01L51/0021 , B82Y10/00 , C23C14/042 , H01L21/31691 , H01L29/66742 , H01L51/001 , H01L51/0013 , H01L51/0016 , H01L51/0036 , H01L51/0037 , H01L51/0046 , H01L51/0052 , H01L51/0078 , H01L51/0545 , Y10S438/943 , Y10S438/944
摘要： A method for making transistors comprises depositing source electrode and drain electrode features onto a substrate through a single aperture in a stationary shadow mask, said aperture having at least two opposing edges; wherein the shapes of the features are defined by the aperture and location of source materials in relation to the substrate.
摘要翻译：一种用于制造晶体管的方法包括通过固定荫罩中的单个孔将源电极和漏极特征沉积到衬底上，所述孔具有至少两个相对的边缘; 其中特征的形状由源材料相对于基底的孔径和位置限定。

5. 发明授权

US08826528B2 Electrical connections for anodized thin film structures 有权
标题翻译：阳极氧化薄膜结构的电气连接
公开(公告)号：US08826528B2
公开(公告)日：2014-09-09
申请号：US13131740
申请日：2009-12-03
申请人： Steven D. Theiss , Michael A. Haase
发明人： Steven D. Theiss , Michael A. Haase
IPC分类号： H05K3/00 , H01L21/768 , H05K3/40 , H01L27/12
CPC分类号： H01L21/76802 , H01L27/1214 , H01L27/124 , H01L2224/24137 , H05K3/4092 , Y10T29/49002 , Y10T29/49124 , Y10T29/49147 , Y10T428/12396
摘要： Approaches for formation of a circuit via which electrically connects a first thin film metallization layer a second thin film metallization layer are described. Via formation involves the use of an anodization barrier and/or supplemental pad disposed in a via connection region prior to anodization of the first metallization layer. The material used to form the barrier is substantially impermeable to the anodization solution during anodization, and disrupts the formation of oxide between the electrically conducting layer and the barrier. The supplemental pad is non-anodizable, and is covered by the barrier to substantially prevent current flow through the pad during anodization. Following anodization, the barrier is removed. If the supplemental pad is sufficiently conductive, it can be left on the first metallization layer after removal of the barrier. The second metallization layer is disposed over the anodized layer, making electrical contact with the first electrically conductive layer in the via connection region.
摘要翻译：描述了形成电路的方法，通过该电路将第一薄膜金属化层电连接到第二薄膜金属化层。通孔形成涉及在阳极氧化第一金属化层之前使用设置在通孔连接区域中的阳极氧化屏障和/或补充焊盘。用于形成屏障的材料在阳极氧化期间对于阳极氧化溶液是基本上不可渗透的，并且破坏导电层和阻挡层之间的氧化物的形成。辅助垫是非阳极氧化的，并被屏障覆盖，以在阳极氧化期间基本上防止电流流过垫。阳极氧化后，屏障被去除。如果补充垫具有足够的导电性，则可以在去除屏障之后留在第一金属化层上。第二金属化层设置在阳极氧化层上，与通孔连接区域中的第一导电层电接触。

6. 发明申请

US20110242778A1 Electrical Connections for Anodized Thin Film Structures 有权
标题翻译：阳极氧化薄膜结构的电气连接
公开(公告)号：US20110242778A1
公开(公告)日：2011-10-06
申请号：US13131740
申请日：2009-12-03
申请人： Steven D. Theiss , Michael A. Haase
发明人： Steven D. Theiss , Michael A. Haase
IPC分类号： H05K7/00 , C25D5/02 , C25D7/00 , H05K3/07 , B32B3/10
CPC分类号： H01L21/76802 , H01L27/1214 , H01L27/124 , H01L2224/24137 , H05K3/4092 , Y10T29/49002 , Y10T29/49124 , Y10T29/49147 , Y10T428/12396
摘要： Approaches for formation of a circuit via which electrically connects a first thin film metallization layer a second thin film metallization layer are described. Via formation involves the use of an anodization barrier and/or supplemental pad disposed in a via connection region prior to anodization of the first metallization layer. The material used to form the barrier is substantially impermeable to the anodization solution during anodization, and disrupts the formation of oxide between the electrically conducting layer and the barrier. The supplemental pad is non-anodizable, and is covered by the barrier to substantially prevent current flow through the pad during anodization. Following anodization, the barrier is removed. If the supplemental pad is sufficiently conductive, it can be left on the first metallization layer after removal of the barrier. The second metallization layer is disposed over the anodized layer, making electrical contact with the first electrically conductive layer in the via connection region.
摘要翻译：描述了形成电路的方法，通过该电路将第一薄膜金属化层电连接到第二薄膜金属化层。通孔形成涉及在阳极氧化第一金属化层之前使用设置在通孔连接区域中的阳极氧化屏障和/或补充焊盘。用于形成屏障的材料在阳极氧化期间对于阳极氧化溶液是基本上不可渗透的，并且破坏导电层和阻挡层之间的氧化物的形成。辅助垫是非阳极氧化的，并被屏障覆盖，以在阳极氧化期间基本上防止电流流过垫。阳极氧化后，屏障被去除。如果补充垫具有足够的导电性，则可以在去除屏障之后留在第一金属化层上。第二金属化层设置在阳极氧化层上，与通孔连接区域中的第一导电层电接触。

7. 发明授权

US07298084B2 Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes 有权
标题翻译：使用集成的氧化锌行和列驱动器结合有机发光二极管的方法和显示
公开(公告)号：US07298084B2
公开(公告)日：2007-11-20
申请号：US10979067
申请日：2004-11-02
申请人： Paul F. Baude , Steven D. Theiss , Michael A. Haase , Eric W. Hemmesch
发明人： Paul F. Baude , Steven D. Theiss , Michael A. Haase , Eric W. Hemmesch
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： H01L27/1225 , H01L27/1214 , H01L27/1218 , H01L27/3244 , H01L27/3248 , H01L27/3262 , H01L29/7869 , H01L2251/5315 , H01L2251/5338
摘要： Methods and displays utilize row and column drivers with ZnO channels that control pixel transistors with ZnO channels, which in turn address OLEDs of an array to produce images of a display screen. A display backplane including the ZnO row and column drivers and the OLEDs may be constructed by utilizing aperture masking or a combination of photolithography and aperture masking. Monolithic integration of the ZnO row and column drivers together with the ZnO pixel transistors is thereby achieved.
摘要翻译：方法和显示器利用具有ZnO通道的行和列驱动器来控制具有ZnO通道的像素晶体管，其又寻址阵列的OLED以产生显示屏的图像。可以通过利用孔径掩模或光刻和孔径掩模的组合来构造包括ZnO行和列驱动器和OLED的显示器背板。由此实现ZnO行和列驱动器与ZnO像素晶体管的整体集成。

8. 发明授权

US09431584B2 Light converting and emitting device with suppressed dark-line defects 有权
标题翻译：具有抑制黑线缺陷的光转换和发射装置
公开(公告)号：US09431584B2
公开(公告)日：2016-08-30
申请号：US13698384
申请日：2011-05-31
申请人： Michael A. Haase , Thomas J. Miller , Terry L. Smith , Xiaoguang Sun , Junqing Xie
发明人： Michael A. Haase , Thomas J. Miller , Terry L. Smith , Xiaoguang Sun , Junqing Xie
IPC分类号： H01L33/50 , H01L33/08 , H01L21/02
CPC分类号： H01L33/504 , H01L21/02477 , H01L21/0256 , H01L21/02568 , H01L33/08 , H01L33/50
摘要： Light emitting systems are described. Particularly, light emitting systems and light converting components utilized within these systems are described. The light emitting system and components are formed such that dark-line defects do not interfere with the light emitting system efficiency.
摘要翻译：描述发光系统。特别地，描述了在这些系统中使用的发光系统和光转换组件。发光系统和部件形成为使得暗线缺陷不会影响发光系统的效率。

9. 发明授权

US08994071B2 Semiconductor devices grown on indium-containing substrates utilizing indium depletion mechanisms 有权
标题翻译：利用铟耗尽机制在含铟衬底上生长的半导体器件
公开(公告)号：US08994071B2
公开(公告)日：2015-03-31
申请号：US13264509
申请日：2010-04-30
申请人： Thomas J. Miller , Michael A. Haase , Xiaoguang Sun
发明人： Thomas J. Miller , Michael A. Haase , Xiaoguang Sun
IPC分类号： H01L29/22 , H01L33/28 , H01L33/00 , H01L21/02 , H01L33/08 , H01L33/50
CPC分类号： H01L33/0087 , H01L21/02392 , H01L21/02463 , H01L21/02466 , H01L21/02469 , H01L21/0256 , H01L21/02568 , H01L21/02576 , H01L21/02631 , H01L33/08 , H01L33/28 , H01L33/502
摘要： We have observed anomalous behavior of II-VI semiconductor devices grown on certain semiconductor substrates, and have determined that the anomalous behavior is likely the result of indium atoms from the substrate migrating into the II-V layers during growth. The indium can thus become an unintended dopant in one or more of the II-VI layers grown on the substrate, particularly layers that are close to the growth substrate, and can detrimentally impact device performance. We describe a variety of semiconductor constructions and techniques effective to deplete the migrating indium within a short distance in the growth layers, or to substantially prevent indium from migrating out of the substrate, or to otherwise substantially isolate functional II-VI layers from the migrating indium, so as to maintain good device performance.
摘要翻译：我们已经观察到在某些半导体衬底上生长的II-VI半导体器件的异常行为，并且已经确定异常行为可能是在生长期间从衬底中的铟原子迁移到II-V层的结果。因此，铟可以成为在衬底上生长的一个或多个II-VI层中的非预期掺杂剂，特别是靠近生长衬底的层，并且可能不利地影响器件性能。我们描述了在生长层中短时间内有效去除迁移铟的各种半导体结构和技术，或者基本上防止铟从衬底迁移出来，或以其他方式实质上将功能性II-VI层与迁移铟，以保持良好的设备性能。

10. 发明授权

US08835963B2 Light converting and emitting device with minimal edge recombination 有权
标题翻译：具有最小边缘复合的光转换和发射装置
公开(公告)号：US08835963B2
公开(公告)日：2014-09-16
申请号：US13701065
申请日：2011-05-25
申请人： Michael A. Haase , Junqing Xie , Thomas J. Miller , Terry L. Smith
发明人： Michael A. Haase , Junqing Xie , Thomas J. Miller , Terry L. Smith
IPC分类号： H01L33/00 , H01L33/50 , H01L33/36
CPC分类号： H01L33/36 , H01L33/005 , H01L33/50
摘要： Light emitting system (100), particularly, light emitting systems that utilize semiconductor wavelength converting regions (104), and methods of producing such systems are disclosed. The light emitting systems and methods of producing such systems seek to frustrate recombination of free carriers that are associated with wavelength converting regions.
摘要翻译：公开了发光系统（100），特别是利用半导体波长转换区域（104）的发光系统以及制造这种系统的方法。产生这种系统的发光系统和方法试图阻止与波长转换区域相关联的游离载体的重组。

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