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    • 1. 发明授权
    • MOS threshold control circuit
    • MOS门限控制电路
    • US4791318A
    • 1988-12-13
    • US132984
    • 1987-12-15
    • Stephen R. LewisScott Lefton
    • Stephen R. LewisScott Lefton
    • H03K19/003H03K17/30
    • H03K19/00384
    • A circuit for controlling the circuit thresholds on an MOS integrated circuit takes advantage of the fact that all MOS devices of a particular type on the same chip have nearly identical characteristics. The circuit thresholds are varied by applying a control voltage to the back gate of an MOS device in each stage to be controlled. The control voltage is generated in a reference stage which utilizes a feedback loop to servo the back gate voltage of an MOS transistor in the loop. A reference voltage equal to the desired circuit threshold votlage is applied to the input of the reference stage. The reference voltage and the reference stage output are applied to an amplifier in the feedback loop. The amplifier applies to the back gate of the MOS transistor in the reference stage a control voltage that tends to equalize or establish a desired offset between the reference voltage and the reference stage output. The control voltage applied to the reference stage back gate is coupled to the back gate of the MOS transistor in each operating stage. The threshold control circuit is particularly useful in CMOS circuits, but can be utilized in any MOS circuit having an MOS transistor with an accessible back gate.
    • 用于控制MOS集成电路上的电路阈值的电路利用了同一芯片上的特定类型的所有MOS器件具有几乎相同的特性的事实。 通过在要控制的每个级中的MOS器件的背栅上施加控制电压来改变电路阈值。 控制电压在参考级中产生,该参考级利用反馈回路来伺服回路中的MOS晶体管的背栅极电压。 将等于所需电路阈值投票的参考电压施加到参考级的输入端。 参考电压和参考级输出被施加到反馈回路中的放大器。 该放大器在参考级中施加到MOS晶体管的背栅极,该控制电压倾向于均衡或建立参考电压和参考级输出之间的期望偏移。 施加到参考级背栅的控制电压在每个操作级耦合到MOS晶体管的背栅。 阈值控制电路在CMOS电路中特别有用,但可以用于具有可访问后门的MOS晶体管的任何MOS电路中。
    • 8. 发明申请
    • SOLENOID ACTUATED DEVICE AND METHODS
    • 电磁阀动作装置及方法
    • US20110168813A1
    • 2011-07-14
    • US12684379
    • 2010-01-08
    • Nadeem N. BunniJayaraman K. VenkataraghavanStephen R. Lewis
    • Nadeem N. BunniJayaraman K. VenkataraghavanStephen R. Lewis
    • F02M51/00F16K31/02H01F7/06
    • F02M47/027F02M63/0021H01F7/1638Y10T29/4902
    • A solenoid actuated device such as a fuel injector includes an actuator body having a plurality of body pieces, and a single-pole solenoid actuator assembly positioned at least partially within the actuator body. The single-pole solenoid actuator assembly includes a one-piece compound armature housing having a load carrying component clamped between the first body piece and the second body piece, and a flux carrying component. The load carrying component includes a high structural strength and a low flux permeability, and the flux carrying component includes a low structural strength and a high flux permeability. A method of making a solenoid actuated device includes placing an armature at a sliding radial air gap with a flux carrying component of a one-piece compound armature housing, and establishing a structural load path by placing a load carrying component of the compound armature housing between a first actuator body piece and a second actuator body piece. A method of operating a single-pole solenoid actuator device includes supporting a flux carrying component of a one-piece compound armature housing with a load carrying component of the compound armature housing, channeling magnetic flux across a sliding air gap between a flux carrying component and the armature, and channeling a clamping load between a first actuator body piece and a second actuator body piece through the load carrying component of the compound armature housing.
    • 诸如燃料喷射器的电磁致动装置包括具有多个主体件的致动器主体和至少部分地位于致动器主体内的单极螺线管致动器组件。 单极螺线管致动器组件包括具有夹在第一主体件和第二主体件之间的承载部件的一件式复合电枢壳体和一个磁通承载部件。 承载部件具有高的结构强度和低的磁通密度,并且磁通承载部件包括低结构强度和高磁通量。 一种制造螺线管致动装置的方法包括将衔铁放置在具有一体式复合电枢壳体的磁通承载部件的滑动径向气隙处,并且通过将复合电枢壳体的承载部件放置在 第一致动器主体部件和第二致动器主体部件。 一种操作单极螺线管致动器装置的方法包括:将具有复合电枢壳体的载荷部件的一体式复合电枢壳体的磁通承载部件支撑,将磁通量穿过载流部件和 并且通过复合电枢壳体的承载部件引导第一致动器本体件和第二致动器本体件之间的夹紧负载。