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    • 2. 发明授权
    • High temperature and chemical resistant process for wafer thinning and backside processing
    • 晶圆薄化和背面加工的高温耐化学工艺
    • US07232770B2
    • 2007-06-19
    • US10908230
    • 2005-05-03
    • John C. MooreAlexander C Smith
    • John C. MooreAlexander C Smith
    • H01L21/31
    • H01L21/3065H01L21/2007
    • A process which uses a silicone resin to form a wafer-to-carrier bonded package that enables wafer thinning and backside processing while the cured resin exhibits high chemical and thermal resistance. The process is versatile in that the constructed wafer package allows for a wide range of chemical exposures to include dilute acid and base etchants, resist and residue strippers, electroplating chemistries, and also providing use in a range of deposition and etch processes that may exceed 300° C. The process utilizes a mixture of silicone monomers that when applied to semiconductor wafers by a spin-coat application, the result is a planarization of the front side device area, and when a subsequent thin coat is applied will facilitate bonding of the wafer-to-carrier package when heat and pressure are applied. The cured silicone bonded wafer-to-carrier package allows for wafer thinning consistent to industry objectives. Backside processing may include thermal oxide deposition, installed vias, and subsequent metallization in plating baths. Upon completion of a thinned and processed wafer, detachment occurs as described in prior art. Specialty chemical systems which completely dissolves the cured silicone and allows the wafer substrate to be easily rinsed and dried and become available for subsequent processing or final dicing and packaging.
    • 使用有机硅树脂形成晶片与载体结合的封装的方法,其能够在固化树脂表现出高的耐化学性和耐热性的同时进行晶片变薄和背面加工。 该方法是多功能的,因为构建的晶片封装允许广泛的化学暴露,包括稀酸和碱蚀刻剂,抗蚀剂和残留剥离剂,电镀化学品,并且还可以在可能超过300的沉积和蚀刻工艺的范围内使用 该方法利用硅氧烷单体的混合物,当通过旋涂施加到半导体晶片上时,其结果是前侧装置区域的平坦化,并且当施加后续薄涂层时将有助于晶片的结合 在施加热和压力时对载体封装。 固化的硅氧烷键合晶片与载体封装允许与工业目标一致的晶片变薄。 背面处理可以包括热氧化物沉积,安装的通孔以及随后在电镀槽中的金属化。 在完成薄化和加工的晶片时,如现有技术中所述发生剥离。 完全溶解固化的硅氧烷的特殊化学系统,并允许晶片基材容易地漂洗和干燥,并可用于后续加工或最终切割和包装。