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    • 8. 发明授权
    • Thick oxide P-gate NMOS capacitor for use in a low-pass filter of a circuit and method of making same
    • 用于电路的低通滤波器的厚氧化物P栅极NMOS电容器及其制造方法
    • US07547956B2
    • 2009-06-16
    • US10975090
    • 2004-10-28
    • Derek TamJasmine ChengJungwoo SongTakayuki Hayashi
    • Derek TamJasmine ChengJungwoo SongTakayuki Hayashi
    • H01L23/58
    • H01L29/93H01L29/94H03L7/0891H03L7/093H03L7/18
    • A circuit with dielectric thicknesses is presented that includes a low-pass filter including one or more semiconductor devices having a thick gate oxide layer, while further semiconductor devices of the circuit have thin gate oxide layers. The low-pass filter semiconductor device includes an N-type substrate, a P-type region formed on the N-type substrate, a thick gate oxide layer formed over the P-type region, a P+ gate electrode formed over the thick gate oxide layer and coupled to a first voltage supply line, and P+ pick-up terminals formed in the P-type region adjacent the gate electrode and coupled to a second voltage supply line. The low-pass filter semiconductor device acts as a capacitor, whereby a gate-to-substrate voltage is maintained at less than zero volts to maintain a stable control voltage for the circuit.
    • 提出了具有介电厚度的电路,其包括包括具有厚栅极氧化物层的一个或多个半导体器件的低通滤波器,而该电路的另外的半导体器件具有薄的栅极氧化物层。 低通滤波器半导体器件包括N型衬底,形成在N型衬底上的P型区,在P型区上形成的厚栅氧化层,形成在厚栅极氧化物上的P +栅电极 并且耦合到第一电压供应线,以及P +拾取端子,其形成在与栅电极相邻的P型区域中并且耦合到第二电压供应线。 低通滤波器半导体器件用作电容器,由此栅极至衬底的电压保持在小于零伏特以保持电路的稳定的控制电压。
    • 9. 发明申请
    • Bias-independent capacitor based on superposition of nonlinear capacitors for analog/RF circuit applications
    • 基于模拟/射频电路应用的非线性电容叠加的偏置电容器
    • US20050156219A1
    • 2005-07-21
    • US10759076
    • 2004-01-20
    • Chun-ying ChenJungwoo Song
    • Chun-ying ChenJungwoo Song
    • H01L27/108H01L29/78
    • H01L29/78
    • A first MOS-on-NWELL device is formed on a substrate and has its pickup terminals optionally connected together. A second MOS-on-NWELL device is formed on the substrate and has its pickup terminals optionally connected together. A gate of the first MOS-on-NWELL device is connected to the pickup terminals of the second MOS-on-NWELL device. A gate of the second MOS-on-NWELL device is connected to the pickup terminals of the first MOS-on-NWELL device. A first PMOS transistor is formed on a substrate and has its source and drain terminals connected together. A second PMOS transistor is formed on a substrate and has its source and drain terminals connected together. A gate of the first PMOS transistor is connected to the source and drain terminals of the second PMOS transistor. A gate of the second PMOS transistor is connected to the source and drain terminals of the first PMOS transistor. A combination of the first and second PMOS transistors are connected in parallel with the first and second MOS-on-NWELL devices.
    • 第一MOS-on-NWELL器件形成在衬底上并且其拾取端子可选地连接在一起。 第二个MOS-on-NWELL器件形成在衬底上,并且其拾取端可选地连接在一起。 第一MOS-on-NWELL装置的栅极连接到第二MOS-on-NWELL装置的拾取端。 第二MOS-on-NWELL装置的栅极连接到第一MOS-on-NWELL装置的拾取端。 第一PMOS晶体管形成在衬底上并且其源极和漏极端子连接在一起。 第二PMOS晶体管形成在衬底上并且其源极和漏极端子连接在一起。 第一PMOS晶体管的栅极连接到第二PMOS晶体管的源极和漏极端子。 第二PMOS晶体管的栅极连接到第一PMOS晶体管的源极和漏极端子。 第一和第二PMOS晶体管的组合与第一和第二MOS-on-NWELL器件并联连接。