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1. 发明授权

US09076805B2 Current sense transistor with embedding of sense transistor cells 有权
标题翻译：具有感测晶体管单元的嵌入的电流检测晶体管
公开(公告)号：US09076805B2
公开(公告)日：2015-07-07
申请号：US13549463
申请日：2012-07-14
申请人： Steffen Thiele , Andreas Meiser , Markus Zundel
发明人： Steffen Thiele , Andreas Meiser , Markus Zundel
IPC分类号： H01L29/78 , H01L23/58 , H01L29/417 , H03K17/082 , H01L27/12 , G01R19/00
CPC分类号： H01L29/7815 , G01R19/0092 , H01L23/58 , H01L27/124 , H01L29/41741 , H01L29/41766 , H01L29/7813 , H01L2924/0002 , H03K17/0822 , H03K2217/0027 , H01L2924/00
摘要： A semiconductor device a field of transistor cells integrated in a semiconductor body. A number of the transistor cells forming a power transistor and at least one of the transistor cells forming a sense transistor. A first source electrode is arranged on the semiconductor body electrically connected to the transistor cell(s) of the sense transistor but electrically isolated from the transistor cells of the power transistor. A second source electrode is arranged on the semiconductor body and covers the transistor cells of both the power transistor and the sense transistor, and at least partially covering the first source electrode in such a manner that the second source electrode is electrically connected only to the transistor cells of the power transistor but electrically isolated from the transistor cells of the sense transistor.
摘要翻译：一种半导体器件，集成在半导体本体中的晶体管单元的场。形成功率晶体管的多个晶体管单元和形成感测晶体管的至少一个晶体管单元。第一源电极布置在电连接到感测晶体管的晶体管单元的半导体本体上，但与功率晶体管的晶体管单元电隔离。第二源电极布置在半导体本体上并覆盖功率晶体管和感测晶体管的晶体管单元，并且至少部分地覆盖第一源电极，使得第二源电极仅电连接到晶体管功率晶体管的单元，但与感测晶体管的晶体管单元电隔离。

2. 发明申请

US20120169377A1 Circuit Arrangement including a Common Source Sense-FET 有权
标题翻译：包括公共源感应FET的电路布置
公开(公告)号：US20120169377A1
公开(公告)日：2012-07-05
申请号：US12982641
申请日：2010-12-30
申请人： Steffen Thiele , Andreas Meiser
发明人： Steffen Thiele , Andreas Meiser
IPC分类号： H03K5/00
CPC分类号： G01R19/0092 , H03F2200/261 , H03F2200/462 , H03K2217/0027
摘要： A current sensing circuit arrangement is disclosed. The circuit arrangement includes a load transistor for controlling a load current to a load being coupled to a drain electrode of the load transistor. A sense transistor is coupled to the load transistor. The sense transistor has a drain electrode that provides a measurement current representative of the load current. The load transistor and the sense transistor are field effect transistors having a common source electrode. A measurement circuit is configured to receive the measurement current from the sense transistor and to generate an output signal therefrom, the output signal being representative of the load current.
摘要翻译：公开了一种电流感测电路装置。电路装置包括负载晶体管，用于控制耦合到负载晶体管的漏电极的负载的负载电流。感测晶体管耦合到负载晶体管。感测晶体管具有提供表示负载电流的测量电流的漏电极。负载晶体管和感测晶体管是具有公共源电极的场效应晶体管。测量电路被配置为从感测晶体管接收测量电流并从其产生输出信号，该输出信号代表负载电流。

3. 发明授权

US09111764B2 Integrated semiconductor device and a bridge circuit with the integrated semiconductor device 有权
标题翻译：集成半导体器件和具有集成半导体器件的桥接电路
公开(公告)号：US09111764B2
公开(公告)日：2015-08-18
申请号：US13548266
申请日：2012-07-13
申请人： Franz Hirler , Andreas Meiser , Steffen Thiele
发明人： Franz Hirler , Andreas Meiser , Steffen Thiele
IPC分类号： H03K17/687 , H01L27/06 , H01L27/082 , H01L27/088 , H01L29/423 , H01L29/40 , H01L29/732 , H01L29/735 , H01L29/78 , H01L29/06 , H01L23/48
CPC分类号： H01L27/0623 , H01L23/481 , H01L23/528 , H01L27/0826 , H01L27/088 , H01L29/0634 , H01L29/1095 , H01L29/402 , H01L29/42372 , H01L29/7327 , H01L29/735 , H01L29/7395 , H01L29/7802 , H01L29/781 , H01L29/7811 , H01L29/7813 , H01L29/7824 , H01L2924/0002 , H03K17/687 , H03K19/018507 , H03K2217/0063 , H03K2217/0072 , H03K2217/0081 , H01L2924/00
摘要： A bridge circuit is provided. The bridge circuit includes a first integrated semiconductor device having a high-side switch, a second integrated semiconductor device having a low-side switch electrically connected with the high-side switch, a first level-shifter electrically connected with the high-side switch and integrated in one of the first integrated semiconductor device and the second integrated semiconductor device, and a second level-shifter electrically connected with the low-side switch and integrated in one of the first integrated semiconductor device and the second integrated semiconductor device. Further, an integrated semiconductor device is provided.
摘要翻译：提供了桥接电路。桥电路包括具有高侧开关的第一集成半导体器件，具有与高侧开关电连接的低侧开关的第二集成半导体器件，与高侧开关电连接的第一电平移位器和集成在第一集成半导体器件和第二集成半导体器件中的一个中，以及与低侧开关电连接并集成在第一集成半导体器件和第二集成半导体器件中的一个中的第二电平转换器。此外，提供了集成半导体器件。

4. 发明申请

US20140015586A1 Integrated Semiconductor Device and a Bridge Circuit with the Integrated Semiconductor Device 有权
标题翻译：集成半导体器件和集成半导体器件的桥接电路
公开(公告)号：US20140015586A1
公开(公告)日：2014-01-16
申请号：US13548266
申请日：2012-07-13
申请人： Franz Hirler , Andreas Meiser , Steffen Thiele
发明人： Franz Hirler , Andreas Meiser , Steffen Thiele
IPC分类号： H03L5/00
CPC分类号： H01L27/0623 , H01L23/481 , H01L23/528 , H01L27/0826 , H01L27/088 , H01L29/0634 , H01L29/1095 , H01L29/402 , H01L29/42372 , H01L29/7327 , H01L29/735 , H01L29/7395 , H01L29/7802 , H01L29/781 , H01L29/7811 , H01L29/7813 , H01L29/7824 , H01L2924/0002 , H03K17/687 , H03K19/018507 , H03K2217/0063 , H03K2217/0072 , H03K2217/0081 , H01L2924/00
摘要： A bridge circuit is provided. The bridge circuit includes a first integrated semiconductor device having a high-side switch, a second integrated semiconductor device having a low-side switch electrically connected with the high-side switch, a first level-shifter electrically connected with the high-side switch and integrated in one of the first integrated semiconductor device and the second integrated semiconductor device, and a second level-shifter electrically connected with the low-side switch and integrated in one of the first integrated semiconductor device and the second integrated semiconductor device. Further, an integrated semiconductor device is provided.
摘要翻译：提供了桥接电路。桥电路包括具有高侧开关的第一集成半导体器件，具有与高侧开关电连接的低侧开关的第二集成半导体器件，与高侧开关电连接的第一电平移位器和集成在第一集成半导体器件和第二集成半导体器件中的一个中，以及与低侧开关电连接并集成在第一集成半导体器件和第二集成半导体器件中的一个中的第二电平转换器。此外，提供了集成半导体器件。

5. 发明授权

US08373449B2 Circuit arrangement including a common source sense-FET 有权
标题翻译：电路布置包括一个公共源极检测FET
公开(公告)号：US08373449B2
公开(公告)日：2013-02-12
申请号：US12982641
申请日：2010-12-30
申请人： Steffen Thiele , Andreas Meiser
发明人： Steffen Thiele , Andreas Meiser
IPC分类号： H02M1/00
CPC分类号： G01R19/0092 , H03F2200/261 , H03F2200/462 , H03K2217/0027
摘要： A current sensing circuit arrangement is disclosed. The circuit arrangement includes a load transistor for controlling a load current to a load being coupled to a drain electrode of the load transistor. A sense transistor is coupled to the load transistor. The sense transistor has a drain electrode that provides a measurement current representative of the load current. The load transistor and the sense transistor are field effect transistors having a common source electrode. A measurement circuit is configured to receive the measurement current from the sense transistor and to generate an output signal therefrom, the output signal being representative of the load current.
摘要翻译：公开了一种电流感测电路装置。电路装置包括负载晶体管，用于控制耦合到负载晶体管的漏电极的负载的负载电流。感测晶体管耦合到负载晶体管。感测晶体管具有提供表示负载电流的测量电流的漏电极。负载晶体管和感测晶体管是具有公共源电极的场效应晶体管。测量电路被配置为从感测晶体管接收测量电流并从其产生输出信号，该输出信号代表负载电流。

6. 发明授权

US08098058B2 Circuit arrangement comprising a load transistor and a measuring transistor 有权
标题翻译：电路装置包括负载晶体管和测量晶体管
公开(公告)号：US08098058B2
公开(公告)日：2012-01-17
申请号：US12628714
申请日：2009-12-01
申请人： Aron Theil , Steffen Thiele
发明人： Aron Theil , Steffen Thiele
IPC分类号： G05F1/573 , G05F3/26
CPC分类号： H03K17/0822 , G01R19/0092 , H03K2217/0027
摘要： One aspect is a circuit arrangement having a load current path with a load transistor having a first and a second load path terminal and a control terminal. A first measurement current path includes a measuring transistor having a first and a second load path terminal and a control terminal. The control terminals and first load path terminals of the load transistor and the measuring transistor are coupled. A first regulating circuit has a controllable resistor and is designed to drive the resistor depending on electrical potentials at the second load path terminals of the load transistor and of the measuring transistor. A current mirror circuit is coupled between the first measurement current path and a second measurement current path. A deactivation circuit is designed to deactivate the first regulating circuit depending on a current flowing through the measuring transistor.
摘要翻译：一个方面是具有负载电流路径的电路装置，负载晶体管具有第一和第二负载路径端子和控制端子。第一测量电流路径包括具有第一和第二负载路径端子和控制端子的测量晶体管。耦合负载晶体管和测量晶体管的控制端子和第一负载路径端子。第一调节电路具有可控电阻器，并且被设计为根据负载晶体管和测量晶体管的第二负载路径端子处的电位来驱动电阻器。电流镜电路耦合在第一测量电流路径和第二测量电流路径之间。停用电路被设计为根据流经测量晶体管的电流去激活第一调节电路。

7. 发明授权

US07821319B2 Switching apparatus and method for detecting an operating state 有权
标题翻译：用于检测操作状态的开关装置和方法
公开(公告)号：US07821319B2
公开(公告)日：2010-10-26
申请号：US11833339
申请日：2007-08-03
申请人： Steffen Thiele
发明人： Steffen Thiele
IPC分类号： H03K17/687
CPC分类号： H03K17/18 , H03K17/04123 , H03K17/145 , H03K17/163 , H03K2217/0027
摘要： A switching apparatus and method for detecting an operating state is disclosed. One embodiment has a MOS transistor, a replica of the MOS transistor and an evaluation arrangement and detects the start of switching of the MOS transistor by comparing the gate-source voltages of the transistors.
摘要翻译：公开了一种用于检测操作状态的开关装置和方法。一个实施例具有MOS晶体管，MOS晶体管的复制品和评估装置，并且通过比较晶体管的栅极 - 源极电压来检测MOS晶体管的开始的开始。

8. 发明申请

US20100134086A1 CIRCUIT ARRANGEMENT COMPRISING A LOAD TRANSISTOR AND A MEASURING TRANSISTOR 有权
标题翻译：包含负载晶体管和测量晶体管的电路布置
公开(公告)号：US20100134086A1
公开(公告)日：2010-06-03
申请号：US12628714
申请日：2009-12-01
申请人： Aron Theil , Steffen Thiele
发明人： Aron Theil , Steffen Thiele
IPC分类号： G05F3/00
CPC分类号： H03K17/0822 , G01R19/0092 , H03K2217/0027
摘要： One aspect is a circuit arrangement having a load current path with a load transistor having a first and a second load path terminal and a control terminal. A first measurement current path includes a measuring transistor having a first and a second load path terminal and a control terminal. The control terminals and first load path terminals of the load transistor and the measuring transistor are coupled. A first regulating circuit has a controllable resistor and is designed to drive the resistor depending on electrical potentials at the second load path terminals of the load transistor and of the measuring transistor. A current mirror circuit is coupled between the first measurement current path and a second measurement current path. A deactivation circuit is designed to deactivate the first regulating circuit depending on a current flowing through the measuring transistor.
摘要翻译：一个方面是具有负载电流路径的电路装置，负载晶体管具有第一和第二负载路径端子和控制端子。第一测量电流路径包括具有第一和第二负载路径端子和控制端子的测量晶体管。耦合负载晶体管和测量晶体管的控制端子和第一负载路径端子。第一调节电路具有可控电阻器，并且被设计为根据负载晶体管和测量晶体管的第二负载路径端子处的电位来驱动电阻器。电流镜电路耦合在第一测量电流路径和第二测量电流路径之间。停用电路被设计为根据流经测量晶体管的电流去激活第一调节电路。

9. 发明授权

US08270135B2 Transistor half-bridge control 有权
标题翻译：晶体管半桥控制
公开(公告)号：US08270135B2
公开(公告)日：2012-09-18
申请号：US12833480
申请日：2010-07-09
申请人： Steffen Thiele
发明人： Steffen Thiele
IPC分类号： H02H3/08 , H02H9/02 , H02H3/00
CPC分类号： H02H7/0838 , H02H3/06 , H02P7/06 , H02P7/28
摘要： A circuit for driving a transistor half bridge is disclosed that comprises a series circuit of a first and a second transistor both having intrinsic or external free-wheeling diodes coupled in parallel. The circuit for driving a transistor half bridge comprises: an over-current detection circuit that is configured to signal an over-current condition when a load current flowing through the first transistor exceeds a first threshold; a protection circuit that is coupled to the over-current detection circuit and that is configured to disable an activation of the first transistor in response to a detected over-current and to re-enable the activation of the first transistor after a first time interval has elapsed; an evaluation circuit that is coupled to the over-current detection circuit and that is configured to check whether a further over-current condition is detected within a second time interval that follows the first time interval. An active free-wheeling by activating the second transistor is disabled when a further over-current condition is detected within the second time interval, and an active free-wheeling by activating the second transistor is enabled during the first time interval when no further over-current condition is detected within the second time interval.
摘要翻译：公开了一种用于驱动晶体管半桥的电路，其包括具有并联耦合的本征或外部续流二极管的第一和第二晶体管的串联电路。用于驱动晶体管半桥的电路包括：过电流检测电路，被配置为当流过第一晶体管的负载电流超过第一阈值时发出过电流状态; 保护电路，其耦合到过电流检测电路，并且被配置为响应于检测到的过电流而禁用第一晶体管的激活，并且在第一时间间隔之后重新启用第一晶体管的激活过去; 耦合到所述过电流检测电路并且被配置为检查在所述第一时间间隔之后的第二时间间隔内是否检测到另外的过电流状况的评估电路。当在第二时间间隔内检测到进一步的过电流状态时，通过激活第二晶体管的有效续流被禁用，并且在第一时间间隔期间启用激活第二晶体管的有效续流是无效的，在第二时间间隔内检测当前条件。

10. 发明申请

US20100007328A1 POWER SWITCH WITH AN OVERCURRENT PROTECTION DEVICE 有权
标题翻译：具有过流保护装置的电源开关
公开(公告)号：US20100007328A1
公开(公告)日：2010-01-14
申请号：US12499611
申请日：2009-07-08
申请人： Rainald Sander , Steffen Thiele , Markus Winkler
发明人： Rainald Sander , Steffen Thiele , Markus Winkler
IPC分类号： G01R19/00
CPC分类号： H03K17/0822 , G01R19/0092
摘要： A power circuit comprises a power transistor for feeding a load current to a load, a measuring transistor for coupling out a measurement current dependent on the load current, at least two coupling transistors for dividing the measurement current into an internal measurement current and into an external measurement current, wherein the external measurement current can be fed to an external evaluation circuit, and the internal measurement current is fed to an internal evaluation circuit for evaluation. A third coupling transistor can be coupled to the measuring transistor if a measuring device determines a non-coupled state, and the third coupling transistor can be decoupled from the measuring transistor if the measuring device determines a coupled state. The measuring device determines the coupled state if the external evaluation device is coupled to the power circuit, and the measuring device determines a non-coupled state if the external evaluation device is not coupled to the power circuit.
摘要翻译：电源电路包括用于将负载电流馈送到负载的功率晶体管，用于耦合取决于负载电流的测量电流的测量晶体管，用于将测量电流分成内部测量电流的至少两个耦合晶体管和外部测量电流，其中外部测量电流可以被馈送到外部评估电路，并且内部测量电流被馈送到用于评估的内部评估电路。如果测量装置确定非耦合状态，则第三耦合晶体管可耦合到测量晶体管，并且如果测量装置确定耦合状态，则第三耦合晶体管可以与测量晶体管分离。如果外部评估装置耦合到电源电路，则测量装置确定耦合状态，并且如果外部评估装置未耦合到电源电路，则测量装置确定非耦合状态。

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